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Lu G, Wang J, Zhou R, Xie Z, Yuan Y, Huang L, Yeow JTW. Terahertz communication: detection and signal processing. NANOTECHNOLOGY 2024; 35:352002. [PMID: 38768574 DOI: 10.1088/1361-6528/ad4dad] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/28/2023] [Accepted: 05/20/2024] [Indexed: 05/22/2024]
Abstract
The development of 6 G networks has promoted related research based on terahertz communication. As submillimeter radiation, signal transportation via terahertz waves has several superior properties, including non-ionizing and easy penetration of non-metallic materials. This paper provides an overview of different terahertz detectors based on various mechanisms. Additionally, the detailed fabrication process, structural design, and the improvement strategies are summarized. Following that, it is essential and necessary to prevent the practical signal from noise, and methods such as wavelet transform, UM-MIMO and decoding have been introduced. This paper highlights the detection process of the terahertz wave system and signal processing after the collection of signal data.
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Affiliation(s)
- Guanxuan Lu
- Advanced Micro-/Nano- Devices Lab, Department of Systems Design Engineering, University of Waterloo, Waterloo, ON N2L 3G1, Canada
| | - Jiaqi Wang
- Advanced Micro-/Nano- Devices Lab, Department of Systems Design Engineering, University of Waterloo, Waterloo, ON N2L 3G1, Canada
| | - Rui Zhou
- Advanced Micro-/Nano- Devices Lab, Department of Systems Design Engineering, University of Waterloo, Waterloo, ON N2L 3G1, Canada
| | - Zhemiao Xie
- Advanced Micro-/Nano- Devices Lab, Department of Systems Design Engineering, University of Waterloo, Waterloo, ON N2L 3G1, Canada
| | - Yifei Yuan
- Advanced Micro-/Nano- Devices Lab, Department of Systems Design Engineering, University of Waterloo, Waterloo, ON N2L 3G1, Canada
| | - Lin Huang
- Advanced Micro-/Nano- Devices Lab, Department of Systems Design Engineering, University of Waterloo, Waterloo, ON N2L 3G1, Canada
| | - John T W Yeow
- Advanced Micro-/Nano- Devices Lab, Department of Systems Design Engineering, University of Waterloo, Waterloo, ON N2L 3G1, Canada
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Baek J, Kim J, Seol JH, Kim M. All-dielectric polarization-sensitive metasurface for terahertz polarimetric imaging. Sci Rep 2024; 14:7544. [PMID: 38555396 PMCID: PMC10981697 DOI: 10.1038/s41598-024-58297-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/27/2023] [Accepted: 03/27/2024] [Indexed: 04/02/2024] Open
Abstract
Terahertz polarimetric imaging, capable of capturing not only intensity profiles but also the polarization states of the incident pattern, is an essential technique with promising applications such as security scans and medical diagnoses. Recently, a novel approach for terahertz imaging has been proposed using a metasurface absorber that converts terahertz light into a temperature profile. However, polarization remains indistinguishable in the imaging process due to the isotropic geometry of the metasurface. To address this issue, this study introduces an all-dielectric, polarization-sensitive metasurface absorber and showcases its suitability for terahertz polarimetric imaging. Optical and thermal simulations confirm that the polarization dependence of our metasurface is translated into the thermal domain, allowing us to distinguish both intensity and polarization states in the incoming image. Additionally, we demonstrate that polarimetric imaging under general, elliptical polarization is attainable. This metasurface facilitates terahertz polarimetric imaging, eliminating the need for complex setups or bulky components, thereby reducing the form factor and enabling widespread use.
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Affiliation(s)
- Juhoon Baek
- School of Mechanical Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea
| | - Jaehoon Kim
- School of Mechanical Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea
| | - Jae Hun Seol
- School of Mechanical Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea.
| | - Minkyung Kim
- School of Mechanical Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea.
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3
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Yoshioka V, Jin J, Zhen B. Coherent FIR/THz wave generation and steering via surface-emitting thin film lithium niobate waveguides. OPTICS EXPRESS 2024; 32:639-651. [PMID: 38175088 DOI: 10.1364/oe.506395] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/25/2023] [Accepted: 12/11/2023] [Indexed: 01/05/2024]
Abstract
Generating narrowband, continuous wave FIR/THz light via difference frequency generation (DFG) remains challenging due to material absorption and dispersion from optical phonons. The relatively new platform of thin film lithium niobate enables high-confinement nonlinear waveguides, reducing device size and potentially improving efficiency. We simulated surface-emitting DFG from 10 to 100 THz in a thin film lithium niobate waveguide with fixed poling period, demonstrating reasonable efficiency and bandwidth. Furthermore, adjusting wavelength and relative phase in an array of these waveguides enables beam steering along two directions. Continuous wave FIR/THz light can be efficiently generated and steered using these integrated devices.
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Hassan MB, Abd-Ali IJ, Mahdi WH, Alkhayatt AHO. Terahertz wave excitation by nonlinear coupling of intense laser field with magnetized plasma. OPTICAL AND QUANTUM ELECTRONICS 2023; 55:275. [DOI: 10.1007/s11082-023-04557-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/06/2022] [Accepted: 01/03/2023] [Indexed: 09/02/2023]
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Wang Z, Zhang Z, Qiu F, Wang M, Yang W, Li Z, Hu X, Li Y, Yan X, Yao H, Liang L. Design of an all-optical multi-logic operation-integrated metamaterial-based terahertz logic gate. OPTICS EXPRESS 2022; 30:40401-40412. [PMID: 36298974 DOI: 10.1364/oe.473601] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2022] [Accepted: 09/22/2022] [Indexed: 06/16/2023]
Abstract
Terahertz logic gates play a vital role in optical signal processing and terahertz digitization. Herein, a strategy to design an all-optical terahertz logic gate device composed of metamaterials with a semiconductor-metal hybrid is proposed; accordingly, a concrete logic gate composed of Ge embedded-in Au stripe supported by a Si board is presented theoretically. Simulation results reveal the dependence of the terahertz transmission spectra on the different illuminations in the device. Based on the illumination-transmission response, the designed device can realize the NOR or OR Boolean operation. The effects of the width of the Ge-Au stripe as well as the Si board on the transmission spectra and logic performance were also investigated.
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Haddad T, Biurrun-Quel C, Lu P, Tebart J, Sievert B, Makhlouf S, Grzeslo M, Teniente J, Del-Río C, Stöhr A. Photonic-assisted 2-D terahertz beam steering enabled by a LWA array monolithically integrated with a BFN. OPTICS EXPRESS 2022; 30:38596-38612. [PMID: 36258421 DOI: 10.1364/oe.468200] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/20/2022] [Accepted: 08/26/2022] [Indexed: 06/16/2023]
Abstract
A novel photonic-assisted 2-D Terahertz beam steering chip using only two tuning elements is presented. The chip is based on an array of three leaky wave antennas (LWAs) with a monolithically integrated beamforming network (BFN) on a 50 µm-thick indium phosphide substrate. The THz beam angle in elevation (E-plane) is controlled via optical frequency tuning using a tunable dual-wavelength laser. An optical delay line is used for azimuth (H-plane) beam control. The simulated beam scanning range is 92° in elevation for a frequency sweep from 0.23 THz to 0.33 THz and 69.18° in azimuth for a time delay of 3.6 ps. For the frequency range from 0.26 THz to 0.32 THz, it is confirmed experimentally that the THz beam scans from -12° to +33°, which is in good agreement with the numerical simulations. The beam direction in azimuth scans with a total angle of 39° when applying a delay difference of 1.68 ps. A good agreement is found between theoretically predicted and experimentally determined THz beam angles with a maximum angle deviation below 5°. The experimental scanning angles are limited due to the mechanical constraints of the on-wafer probes, the on-chip integrated transition and the bandwidth of the THz receiver LNA. The mechanical limitation will be overcome when using a packaged chip.
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Liu Y, Acuna W, Zhang H, Ho DQ, Hu R, Wang Z, Janotti A, Bryant G, Davydov AV, Zide JMO, Law S. Bi 2Se 3 Growth on (001) GaAs Substrates for Terahertz Integrated Systems. ACS APPLIED MATERIALS & INTERFACES 2022; 14:42683-42691. [PMID: 36074957 DOI: 10.1021/acsami.2c11135] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Terahertz (THz) technologies have been of interest for many years due to the variety of applications including gas sensing, nonionizing imaging of biological systems, security and defense, and so forth. To date, scientists have used different classes of materials to perform different THz functions. However, to assemble an on-chip THz integrated system, we must understand how to integrate these different materials. Here, we explore the growth of Bi2Se3, a topological insulator material that could serve as a plasmonic waveguide in THz integrated devices, on technologically important GaAs(001) substrates. We explore surface treatments and find that an atomically smooth GaAs surface is critical to achieving high-quality Bi2Se3 films despite the relatively weak film/substrate interaction. Calculations indicate that the Bi2Se3/GaAs interface is likely selenium-terminated and shows no evidence of chemical bonding between the Bi2Se3 and the substrate. These results are a guide for integrating van der Waals materials with conventional semiconductor substrates and serve as the first steps toward achieving an on-chip THz integrated system.
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Affiliation(s)
- Yongchen Liu
- Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, United States
| | - Wilder Acuna
- Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, United States
| | - Huairuo Zhang
- Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
- Theiss Research, Inc., La Jolla, California 92037, United States
| | - Dai Q Ho
- Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, United States
| | - Ruiqi Hu
- Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, United States
| | - Zhengtianye Wang
- Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, United States
| | - Anderson Janotti
- Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, United States
| | - Garnett Bryant
- Nanoscale Device Characterization Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Albert V Davydov
- Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Joshua M O Zide
- Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, United States
| | - Stephanie Law
- Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, United States
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Li W, Hu X, Wu J, Fan K, Chen B, Zhang C, Hu W, Cao X, Jin B, Lu Y, Chen J, Wu P. Dual-color terahertz spatial light modulator for single-pixel imaging. LIGHT, SCIENCE & APPLICATIONS 2022; 11:191. [PMID: 35739086 PMCID: PMC9225988 DOI: 10.1038/s41377-022-00879-5] [Citation(s) in RCA: 18] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/21/2022] [Revised: 06/07/2022] [Accepted: 06/08/2022] [Indexed: 06/06/2023]
Abstract
Spatial light modulators (SLM), capable of dynamically and spatially manipulating electromagnetic waves, have reshaped modern life in projection display and remote sensing. The progress of SLM will expedite next-generation communication and biomedical imaging in the terahertz (THz) range. However, most current THz SLMs are adapted from optical alternatives that still need improvement in terms of uniformity, speed, and bandwidth. Here, we designed, fabricated, and characterized an 8 × 8 THz SLM based on tunable liquid crystal metamaterial absorbers for THz single-pixel compressive imaging. We demonstrated dual-color compressive sensing (CS) imaging for dispersive objects utilizing the large frequency shift controlled by an external electric field. We developed auto-calibrated compressive sensing (ACS) algorithm to mitigate the impact of the spatially nonuniform THz incident beam and pixel modulation, which significantly improves the fidelity of reconstructed images. Furthermore, the complementary modulation at two absorption frequencies enables Hadamard masks with negative element values to be realized by frequency-switching, thereby halving the imaging time. The demonstrated imaging system paves a new route for THz single-pixel multispectral imaging with high reliability and low cost.
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Affiliation(s)
- Weili Li
- Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, China
| | - Xuemei Hu
- School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, China
| | - Jingbo Wu
- Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, China.
- Purple Mountain Laboratories, Nanjing, 211111, China.
| | - Kebin Fan
- Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, China.
- Purple Mountain Laboratories, Nanjing, 211111, China.
| | - Benwen Chen
- Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, China
| | - Caihong Zhang
- Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, China
- Purple Mountain Laboratories, Nanjing, 211111, China
| | - Wei Hu
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures and College of Engineering and Applied Sciences, Nanjing University, 163 Xianlin Avenue, Nanjing, 210023, China
| | - Xun Cao
- School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, China
| | - Biaobing Jin
- Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, China.
- Purple Mountain Laboratories, Nanjing, 211111, China.
| | - Yanqing Lu
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures and College of Engineering and Applied Sciences, Nanjing University, 163 Xianlin Avenue, Nanjing, 210023, China
| | - Jian Chen
- Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, China
- Purple Mountain Laboratories, Nanjing, 211111, China
| | - Peiheng Wu
- Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, China
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The Role of the Directivity of Various THz Detectors in Multiplexing Systems. APPLIED SCIENCES-BASEL 2022. [DOI: 10.3390/app12073545] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/27/2023]
Abstract
Many modern and future systems, based on the wireless communication at the THz frequencies, could benefit from multichannel transmission. One of the possible approaches is to (de)multiplex several separate signals to and from a single transmission channel using dedicated diffractive optical elements. Proper selection of receivers for such systems is crucial and strongly depends not only on the frequencies used but also on the geometry of the setup. In this article, we present a complex analysis of the applicability of various detectors for the characterization of highly convergent and off-axis beams. Three three-focal-spot diffractive lenses have been designed, optimized and manufactured to verify the influence of parameters such as focal length, focal position shift, deflection angle or radiation frequency on the proper detection and separation of focal spots using different receivers. The reliable characterization of multi-focal-point structures can be performed only with high-acceptance-angle detectors, such as, for example, field-effect transistors equipped with a patch antenna. On the other hand, for the detection of a single demultiplexed signal, a much more directive receiver can be applied, as long as it is placed at a proper angle.
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Agour M, Fallorf C, Taleb F, Castro-Camus E, Koch M, Bergmann RB. Terahertz referenceless wavefront sensing by means of computational shear-interferometry. OPTICS EXPRESS 2022; 30:7068-7081. [PMID: 35299478 DOI: 10.1364/oe.450708] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/08/2021] [Accepted: 01/28/2022] [Indexed: 06/14/2023]
Abstract
In this contribution, we demonstrate the first referenceless measurement of a THz wavefront by means of shear-interferometry. The technique makes use of a transmissive Ronchi phase grating to generate the shear. We fabricated the grating by mechanical machining of high-density polyethylene. At the camera plane, the +1 and -1 diffraction orders are coherently superimposed, generating an interferogram. We can adjust the shear by selecting the period of the grating and the focal length of the imaging system. We can also alter the direction of the shear by rotating the grating. A gradient-based iterative algorithm is used to reconstruct the wavefront from a set of shear interferograms. The results presented in this study demonstrate the first step towards wavefield sensing in the terahertz band without using a reference wave.
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Xi F, Yang H, Khayrudinov V, He Y, Haggren T, Zhou Y, Lipsanen H, Sun Z, Xu X. Enhanced terahertz emission from mushroom-shaped InAs nanowire network induced by linear and nonlinear optical effects. NANOTECHNOLOGY 2021; 33:085207. [PMID: 34768252 DOI: 10.1088/1361-6528/ac3948] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2021] [Accepted: 11/12/2021] [Indexed: 06/13/2023]
Abstract
The development of powerful terahertz (THz) emitters is the cornerstone for future THz applications, such as communication, medical biology, non-destructive inspection, and scientific research. Here, we report the THz emission properties and mechanisms of mushroom-shaped InAs nanowire (NW) network using linearly polarized laser excitation. By investigating the dependence of THz signal to the incidence pump light properties (e.g. incident angle, direction, fluence, and polarization angle), we conclude that the THz wave emission from the InAs NW network is induced by the combination of linear and nonlinear optical effects. The former is a transient photocurrent accelerated by the photo-Dember field, while the latter is related to the resonant optical rectification effect. Moreover, thep-polarized THz wave emission component is governed by the linear optical effect with a proportion of ∼85% and the nonlinear optical effect of ∼15%. In comparison, thes-polarized THz wave emission component is mainly decided by the nonlinear optical effect. The THz emission is speculated to be enhanced by the localized surface plasmon resonance absorption of the In droplets on top of the NWs. This work verifies the nonlinear optical mechanism in the THz generation of semiconductor NWs and provides an enlightening reference for the structural design of powerful and flexible THz surface and interface emitters in transmission geometry.
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Affiliation(s)
- Fugang Xi
- Shaanxi Joint Lab of Graphene, State Key Laboratory of Photoelectric Technology and Functional Materials, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, School of Physics, Northwest University, Xi'an 710127, People's Republic of China
| | - He Yang
- School of Instrumentation and Optoelectronic Engineering, Beihang University, Beijing 100191, People's Republic of China
- Department of Electronics and Nanoengineering, Aalto University, Espoo, PO Box 13500, FI-00076, Finland
| | - Vladislav Khayrudinov
- Department of Electronics and Nanoengineering, Aalto University, Espoo, PO Box 13500, FI-00076, Finland
| | - Yuhang He
- Shaanxi Joint Lab of Graphene, State Key Laboratory of Photoelectric Technology and Functional Materials, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, School of Physics, Northwest University, Xi'an 710127, People's Republic of China
| | - Tuomas Haggren
- Department of Electronics and Nanoengineering, Aalto University, Espoo, PO Box 13500, FI-00076, Finland
| | - Yixuan Zhou
- Shaanxi Joint Lab of Graphene, State Key Laboratory of Photoelectric Technology and Functional Materials, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, School of Physics, Northwest University, Xi'an 710127, People's Republic of China
| | - Harri Lipsanen
- Department of Electronics and Nanoengineering, Aalto University, Espoo, PO Box 13500, FI-00076, Finland
| | - Zhipei Sun
- Department of Electronics and Nanoengineering, Aalto University, Espoo, PO Box 13500, FI-00076, Finland
| | - Xinlong Xu
- Shaanxi Joint Lab of Graphene, State Key Laboratory of Photoelectric Technology and Functional Materials, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, School of Physics, Northwest University, Xi'an 710127, People's Republic of China
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Rong L, Wang S, Wang D, Tan F, Zhang Y, Zhao J, Wang Y. Transport of intensity equation-based terahertz lensless full-field phase imaging. OPTICS LETTERS 2021; 46:5846-5849. [PMID: 34851905 DOI: 10.1364/ol.442625] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2021] [Accepted: 10/26/2021] [Indexed: 06/13/2023]
Abstract
Terahertz (THz) phase imaging is widely spreading in various scenarios, among which full-field phase distributions are commonly retrieved by digital holography or ptychography. In this Letter, the transport of the intensity equation reconstruction method is applied into the THz band. An algorithm named the lensless US-transport of intensity equation (TIE) is proposed to accommodate to an in-line configuration. The object phase is retrieved by primarily conducting iterations between the axial intensity derivative and the phase distribution at the recording plane and subsequent backward diffraction propagation. This method is applicable to both isolated and extended weakly absorbing samples with higher reconstruction quality and remarkably less time cost than holographic phase retrieval algorithms. It can also be attempted in other non-interferometric geometries or using low-cost partially coherent THz sources, which significantly broaden the application scope of THz phase imaging.
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Shchepetilnikov AV, Gusikhin PA, Muravev VM, Kaysin BD, Tsydynzhapov GE, Dremin AA, Kukushkin IV. Linear scanning system for THz imaging. APPLIED OPTICS 2021; 60:10448-10452. [PMID: 34807056 DOI: 10.1364/ao.442060] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2021] [Accepted: 10/29/2021] [Indexed: 06/13/2023]
Abstract
A linear scanning system utilizing constant wave 280 GHz radiation has been developed and characterized. The system comprises a linear array of detectors based on a unique plasma wave approach in terahertz sensing, an impact ionization avalanche transit-time-diode signal generator coupled to a frequency multiplier and an optical system. The performed tests allowed us to estimate the resolution of the system reaching the value of 2.3 mm and to determine the dynamic range of the system to be around 200. The imaging capabilities of the scanner were tested in realistic cases of non-destructive testing and security screening.
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Wang L. Terahertz Imaging for Breast Cancer Detection. SENSORS (BASEL, SWITZERLAND) 2021; 21:6465. [PMID: 34640784 PMCID: PMC8512288 DOI: 10.3390/s21196465] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/06/2021] [Revised: 09/19/2021] [Accepted: 09/26/2021] [Indexed: 12/02/2022]
Abstract
Terahertz (THz) imaging has the potential to detect breast tumors during breast-conserving surgery accurately. Over the past decade, many research groups have extensively studied THz imaging and spectroscopy techniques for identifying breast tumors. This manuscript presents the recent development of THz imaging techniques for breast cancer detection. The dielectric properties of breast tissues in the THz range, THz imaging and spectroscopy systems, THz radiation sources, and THz breast imaging studies are discussed. In addition, numerous chemometrics methods applied to improve THz image resolution and data collection processing are summarized. Finally, challenges and future research directions of THz breast imaging are presented.
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Affiliation(s)
- Lulu Wang
- Biomedical Device Innovation Center, Shenzhen Technology University, Shenzhen 518118, China;
- Institute of Biomedical Technologies, Auckland University of Technology, Auckland 1010, New Zealand
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