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Ghosh S, Khan MB, Chava P, Watanabe K, Taniguchi T, Prucnal S, Hübner R, Mikolajick T, Erbe A, Georgiev YM. Novel Mixed-Dimensional hBN-Passivated Silicon Nanowire Reconfigurable Field Effect Transistors: Fabrication and Characterization. ACS APPLIED MATERIALS & INTERFACES 2023; 15:40709-40718. [PMID: 37606167 PMCID: PMC10472425 DOI: 10.1021/acsami.3c04808] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/04/2023] [Accepted: 08/08/2023] [Indexed: 08/23/2023]
Abstract
This work demonstrates the novel concept of a mixed-dimensional reconfigurable field effect transistor (RFET) by combining a one-dimensional (1D) channel material such as a silicon (Si) nanowire with a two-dimensional (2D) material as a gate dielectric. An RFET is an innovative device that can be dynamically programmed to perform as either an n- or p-FET by applying appropriate gate potentials. In this work, an insulating 2D material, hexagonal boron nitride (hBN), is introduced as a gate dielectric and encapsulation layer around the nanowire in place of a thermally grown or atomic-layer-deposited oxide. hBN flake was mechanically exfoliated and transferred onto a silicon nanowire-based RFET device using the dry viscoelastic stamping transfer technique. The thickness of the hBN flakes was investigated by atomic force microscopy and transmission electron microscopy. The ambipolar transfer characteristics of the Si-hBN RFETs with different gating architectures showed a significant improvement in the device's electrical parameters due to the encapsulation and passivation of the nanowire with the hBN flake. Both n- and p-type characteristics measured through the top gate exhibited a reduction of hysteresis by 10-20 V and an increase in the on-off ratio (ION/IOFF) by 1 order of magnitude (up to 108) compared to the values measured for unpassivated nanowire. Specifically, the hBN encapsulation provided improved electrostatic top gate coupling, which is reflected in the enhanced subthreshold swing values of the devices. For a single nanowire, an improvement up to 0.97 and 0.5 V/dec in the n- and p-conduction, respectively, is observed. Due to their dynamic switching and polarity control, RFETs boast great potential in reducing the device count, lowering power consumption, and playing a crucial role in advanced electronic circuitry. The concept of mixed-dimensional RFET could further strengthen its functionality, opening up new pathways for future electronics.
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Affiliation(s)
- Sayantan Ghosh
- Institute
of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstraße 400, Dresden 01328, Germany
- Technische
Universität Dresden, Dresden 01069, Germany
| | - Muhammad Bilal Khan
- Institute
of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstraße 400, Dresden 01328, Germany
| | - Phanish Chava
- Institute
of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstraße 400, Dresden 01328, Germany
- Technische
Universität Dresden, Dresden 01069, Germany
| | - Kenji Watanabe
- National
Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- National
Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Slawomir Prucnal
- Institute
of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstraße 400, Dresden 01328, Germany
| | - René Hübner
- Institute
of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstraße 400, Dresden 01328, Germany
| | - Thomas Mikolajick
- Technische
Universität Dresden, Dresden 01069, Germany
- Namlab
gGmbH, Nöthnitzer Strasse 64, Dresden 01187, Germany
- Technische
Universität Dresden, Center for Advancing
Electronics Dresden (CfAED), Dresden 01069, Germany
| | - Artur Erbe
- Institute
of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstraße 400, Dresden 01328, Germany
- Technische
Universität Dresden, Dresden 01069, Germany
- Technische
Universität Dresden, Center for Advancing
Electronics Dresden (CfAED), Dresden 01069, Germany
| | - Yordan M. Georgiev
- Institute
of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstraße 400, Dresden 01328, Germany
- Institute
of Electronics at the Bulgarian Academy of Sciences, 72 Tsarigradsko chaussee blvd, Sofia 1784, Bulgaria
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Adam T, Dhahi TS, Gopinath SCB, Hashim U. Novel Approaches in Fabrication and Integration of Nanowire for Micro/Nano Systems. Crit Rev Anal Chem 2022; 52:1913-1929. [DOI: 10.1080/10408347.2021.1925523] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
- Tijjani Adam
- Faculty of Electronic Engineering Technology, Universiti Malaysia Perlis, Perlis, Malaysia
- Institute of Nano Electronic Engineering, Universiti Malaysia Perlis, Perlis, Malaysia
| | | | - Subash C. B. Gopinath
- Institute of Nano Electronic Engineering, Universiti Malaysia Perlis, Perlis, Malaysia
- Faculty of Chemical Engineering Technology, Universiti Malaysia Perlis, Perlis, Malaysia
| | - Uda Hashim
- Institute of Nano Electronic Engineering, Universiti Malaysia Perlis, Perlis, Malaysia
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3
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Wind L, Böckle R, Sistani M, Schweizer P, Maeder X, Michler J, Murphey CG, Cahoon J, Weber WM. Monolithic and Single-Crystalline Aluminum-Silicon Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2022; 14:26238-26244. [PMID: 35621308 PMCID: PMC9185687 DOI: 10.1021/acsami.2c04599] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/14/2022] [Accepted: 05/16/2022] [Indexed: 06/15/2023]
Abstract
Overcoming the difficulty in the precise definition of the metal phase of metal-Si heterostructures is among the key prerequisites to enable reproducible next-generation nanoelectronic, optoelectronic, and quantum devices. Here, we report on the formation of monolithic Al-Si heterostructures obtained from both bottom-up and top-down fabricated Si nanostructures and Al contacts. This is enabled by a thermally induced Al-Si exchange reaction, which forms abrupt and void-free metal-semiconductor interfaces in contrast to their bulk counterparts. The selective and controllable transformation of Si NWs into Al provides a nanodevice fabrication platform with high-quality monolithic and single-crystalline Al contacts, revealing resistivities as low as ρ = (6.31 ± 1.17) × 10-8 Ω m and breakdown current densities of Jmax = (1 ± 0.13) × 1012 Ω m-2. Combining transmission electron microscopy and energy-dispersive X-ray spectroscopy confirmed the composition as well as the crystalline nature of the presented Al-Si-Al heterostructures, with no intermetallic phases formed during the exchange process in contrast to state-of-the-art metal silicides. The thereof formed single-element Al contacts explain the robustness and reproducibility of the junctions. Detailed and systematic electrical characterizations carried out on back- and top-gated heterostructure devices revealed symmetric effective Schottky barriers for electrons and holes. Most importantly, fulfilling compatibility with modern complementary metal-oxide semiconductor fabrication, the proposed thermally induced Al-Si exchange reaction may give rise to the development of next-generation reconfigurable electronics relying on reproducible nanojunctions.
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Affiliation(s)
- Lukas Wind
- Institute
of Solid State Electronics, Technische Universität
Wien, Gußhausstraße 25-25a, 1040 Vienna, Austria
| | - Raphael Böckle
- Institute
of Solid State Electronics, Technische Universität
Wien, Gußhausstraße 25-25a, 1040 Vienna, Austria
| | - Masiar Sistani
- Institute
of Solid State Electronics, Technische Universität
Wien, Gußhausstraße 25-25a, 1040 Vienna, Austria
| | - Peter Schweizer
- Swiss
Federal Laboratories for Materials Science and Technology, Laboratory for Mechanics of Materials and Nanostructures, Feuerwerkstrasse 39, 3602 Thun, Switzerland
| | - Xavier Maeder
- Swiss
Federal Laboratories for Materials Science and Technology, Laboratory for Mechanics of Materials and Nanostructures, Feuerwerkstrasse 39, 3602 Thun, Switzerland
| | - Johann Michler
- Swiss
Federal Laboratories for Materials Science and Technology, Laboratory for Mechanics of Materials and Nanostructures, Feuerwerkstrasse 39, 3602 Thun, Switzerland
| | - Corban G.E. Murphey
- Department
of Chemistry, University of North Carolina, Chapel Hill, North Carolina 27599-3290, United States
| | - James Cahoon
- Department
of Chemistry, University of North Carolina, Chapel Hill, North Carolina 27599-3290, United States
| | - Walter M. Weber
- Institute
of Solid State Electronics, Technische Universität
Wien, Gußhausstraße 25-25a, 1040 Vienna, Austria
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Guo J, Wang Y, Zhang H, Zhao Y. Conductive Materials with Elaborate Micro/Nanostructures for Bioelectronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2110024. [PMID: 35081264 DOI: 10.1002/adma.202110024] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/08/2021] [Revised: 01/21/2022] [Indexed: 06/14/2023]
Abstract
Bioelectronics, an emerging field with the mutual penetration of biological systems and electronic sciences, allows the quantitative analysis of complicated biosignals together with the dynamic regulation of fateful biological functions. In this area, the development of conductive materials with elaborate micro/nanostructures has been of great significance to the improvement of high-performance bioelectronic devices. Thus, here, a comprehensive and up-to-date summary of relevant research studies on the fabrication and properties of conductive materials with micro/nanostructures and their promising applications and future opportunities in bioelectronic applications is presented. In addition, a critical analysis of the current opportunities and challenges regarding the future developments of conductive materials with elaborate micro/nanostructures for bioelectronic applications is also presented.
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Affiliation(s)
- Jiahui Guo
- Department of Rheumatology and Immunology, Institute of Translational Medicine, The Affiliated Drum Tower Hospital of Nanjing University Medical School, Nanjing, 210008, China
- State Key Laboratory of Bioelectronics, School of Biological Science and Medical Engineering, Southeast University, Nanjing, 210096, China
| | - Yu Wang
- Department of Rheumatology and Immunology, Institute of Translational Medicine, The Affiliated Drum Tower Hospital of Nanjing University Medical School, Nanjing, 210008, China
- State Key Laboratory of Bioelectronics, School of Biological Science and Medical Engineering, Southeast University, Nanjing, 210096, China
| | - Hui Zhang
- State Key Laboratory of Bioelectronics, School of Biological Science and Medical Engineering, Southeast University, Nanjing, 210096, China
| | - Yuanjin Zhao
- Department of Rheumatology and Immunology, Institute of Translational Medicine, The Affiliated Drum Tower Hospital of Nanjing University Medical School, Nanjing, 210008, China
- State Key Laboratory of Bioelectronics, School of Biological Science and Medical Engineering, Southeast University, Nanjing, 210096, China
- Oujiang Laboratory (Zhejiang Lab for Regenerative Medicine, Vision and Brain Health), Wenzhou Institute, University of Chinese Academy of Sciences, Wenzhou, Zhejiang, 325001, China
- Institute for Stem Cell and Regeneration, Chinese Academy of Science, Beijing, 100101, China
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Khan MB, Prucnal S, Ghosh S, Deb D, Hübner R, Pohl D, Rebohle L, Mikolajick T, Erbe A, Georgiev YM. Controlled Silicidation of Silicon Nanowires Using Flash Lamp Annealing. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2021; 37:14284-14291. [PMID: 34860534 DOI: 10.1021/acs.langmuir.1c01862] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Among other new device concepts, nickel silicide (NiSix)-based Schottky barrier nanowire transistors are projected to supplement down-scaling of the complementary metal-oxide semiconductor (CMOS) technology as its physical limits are reached. Control over the NiSix phase and its intrusions into the nanowire is essential for superior performance and down-scaling of these devices. Several works have shown control over the phase, but control over the intrusion lengths has remained a challenge. To overcome this, we report a novel millisecond-range flash lamp annealing (FLA)-based silicidation process. Nanowires are fabricated on silicon-on-insulator substrates using a top-down approach. Subsequently, Ni silicidation experiments are carried out using FLA. It is demonstrated that this silicidation process gives unprecedented control over the silicide intrusions. Scanning electron microscopy and high-resolution transmission electron microscopy are performed for structural characterization of the silicide. FLA temperatures are estimated with the help of simulations.
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Affiliation(s)
- Muhammad Bilal Khan
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
- International Helmholtz Research School for Nanoelectronic Network, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
- Technische Universität Dresden, Center for Advancing Electronics Dresden (CfAED), Dresden 01069, Germany
| | - Slawomir Prucnal
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
| | - Sayantan Ghosh
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
| | - Dipjyoti Deb
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
- International Helmholtz Research School for Nanoelectronic Network, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
| | - René Hübner
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
| | - Darius Pohl
- Technische Universität Dresden, Center for Advancing Electronics Dresden (CfAED), Dresden 01069, Germany
- Dresden Center for Nanoanalysis (DCN), CfAED, Technische Universität Dresden, Dresden 01069, Germany
| | - Lars Rebohle
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
| | - Thomas Mikolajick
- Technische Universität Dresden, Center for Advancing Electronics Dresden (CfAED), Dresden 01069, Germany
- Namlab gGmbH, Nöthnitzer Strasse 64, Dresden 01187, Germany
| | - Artur Erbe
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
- Technische Universität Dresden, Center for Advancing Electronics Dresden (CfAED), Dresden 01069, Germany
| | - Yordan M Georgiev
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
- Institute of Electronics at the Bulgarian Academy of Sciences, 72, Tsarigradsko Chaussee Boulevard, Sofia 1784, Bulgaria
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6
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Wind L, Sistani M, Song Z, Maeder X, Pohl D, Michler J, Rellinghaus B, Weber WM, Lugstein A. Monolithic Metal-Semiconductor-Metal Heterostructures Enabling Next-Generation Germanium Nanodevices. ACS APPLIED MATERIALS & INTERFACES 2021; 13:12393-12399. [PMID: 33683092 PMCID: PMC7975277 DOI: 10.1021/acsami.1c00502] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/09/2021] [Accepted: 02/23/2021] [Indexed: 06/12/2023]
Abstract
Low-dimensional Ge is perceived as a promising building block for emerging optoelectronic devices. Here, we present a wafer-scale platform technology enabling monolithic Al-Ge-Al nanostructures fabricated by a thermally induced Al-Ge exchange reaction. Transmission electron microscopy confirmed the purity and crystallinity of the formed Al segments with an abrupt interface to the remaining Ge segment. In good agreement with the theoretical value of bulk Al-Ge Schottky junctions, a barrier height of 200 ± 20 meV was determined. Photoluminescence and μ-Raman measurements proved the optical quality of the Ge channel embedded in the monolithic Al-Ge-Al heterostructure. Together with the wafer-scale accessibility, the proposed fabrication scheme may give rise to the development of key components of a broad spectrum of emerging Ge-based devices requiring monolithic metal-semiconductor-metal heterostructures with high-quality interfaces.
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Affiliation(s)
- Lukas Wind
- Institute
of Solid State Electronics, Technische Universität
Wien, Gußhausstraße 25-25a, Vienna 1040, Austria
| | - Masiar Sistani
- Institute
of Solid State Electronics, Technische Universität
Wien, Gußhausstraße 25-25a, Vienna 1040, Austria
| | - Zehao Song
- Institute
of Solid State Electronics, Technische Universität
Wien, Gußhausstraße 25-25a, Vienna 1040, Austria
| | - Xavier Maeder
- Swiss
Federal Laboratories for Materials Science and Technology, Laboratory for Mechanics of Materials and Nanostructures, Feuerwerkerstrasse 39, Thun 3602, Switzerland
| | - Darius Pohl
- Dresden
Center for Nanoanalysis, Technische Universität
Dresden, Helmholtzstraße
18, Dresden 01069, Germany
| | - Johann Michler
- Swiss
Federal Laboratories for Materials Science and Technology, Laboratory for Mechanics of Materials and Nanostructures, Feuerwerkerstrasse 39, Thun 3602, Switzerland
| | - Bernd Rellinghaus
- Dresden
Center for Nanoanalysis, Technische Universität
Dresden, Helmholtzstraße
18, Dresden 01069, Germany
| | - Walter M. Weber
- Institute
of Solid State Electronics, Technische Universität
Wien, Gußhausstraße 25-25a, Vienna 1040, Austria
| | - Alois Lugstein
- Institute
of Solid State Electronics, Technische Universität
Wien, Gußhausstraße 25-25a, Vienna 1040, Austria
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