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Huang W, Wu J, Li W, Chen G, Chu C, Li C, Zhu Y, Yang H, Chao Y. Fabrication of Silicon Nanowires by Metal-Assisted Chemical Etching Combined with Micro-Vibration. MATERIALS (BASEL, SWITZERLAND) 2023; 16:5483. [PMID: 37570187 PMCID: PMC10420322 DOI: 10.3390/ma16155483] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Revised: 07/27/2023] [Accepted: 08/01/2023] [Indexed: 08/13/2023]
Abstract
In this work, we design a micro-vibration platform, which combined with the traditional metal-assisted chemical etching (MaCE) to etch silicon nanowires (SiNWs). The etching mechanism of SiNWs, including in the mass-transport (MT) and charge-transport (CT) processes, was explored through the characterization of SiNW's length as a function of MaCE combined with micro-vibration conditions, such as vibration amplitude and frequency. The scanning electron microscope (SEM) experimental results indicated that the etching rate would be continuously improved with an increase in amplitude and reached its maximum at 4 μm. Further increasing amplitude reduced the etching rate and affected the morphology of the SiNWs. Adjusting the vibration frequency would result in a maximum etching rate at a frequency of 20 Hz, and increasing the frequency will not help to improve the etching effects.
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Affiliation(s)
- Weiye Huang
- School of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, China; (W.H.); (W.L.); (G.C.); (C.C.); (Y.Z.); (H.Y.)
| | - Junyi Wu
- Sanmen Sanyou Technology Inc., Taizhou 472000, China;
| | - Wenxin Li
- School of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, China; (W.H.); (W.L.); (G.C.); (C.C.); (Y.Z.); (H.Y.)
| | - Guojin Chen
- School of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, China; (W.H.); (W.L.); (G.C.); (C.C.); (Y.Z.); (H.Y.)
| | - Changyong Chu
- School of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, China; (W.H.); (W.L.); (G.C.); (C.C.); (Y.Z.); (H.Y.)
| | - Chao Li
- School of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, China; (W.H.); (W.L.); (G.C.); (C.C.); (Y.Z.); (H.Y.)
| | - Yucheng Zhu
- School of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, China; (W.H.); (W.L.); (G.C.); (C.C.); (Y.Z.); (H.Y.)
| | - Hui Yang
- School of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, China; (W.H.); (W.L.); (G.C.); (C.C.); (Y.Z.); (H.Y.)
| | - Yan Chao
- School of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, China; (W.H.); (W.L.); (G.C.); (C.C.); (Y.Z.); (H.Y.)
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Hu J, Li Y, Zhang X, Wang Y, Zhang J, Yan J, Li J, Zhang Z, Yin H, Wei Q, Jiang Q, Wei S, Zhang Q. Ultrasensitive Silicon Nanowire Biosensor with Modulated Threshold Voltages and Ultra-Small Diameter for Early Kidney Failure Biomarker Cystatin C. BIOSENSORS 2023; 13:645. [PMID: 37367010 DOI: 10.3390/bios13060645] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2023] [Revised: 06/01/2023] [Accepted: 06/09/2023] [Indexed: 06/28/2023]
Abstract
Acute kidney injury (AKI) is a frequently occurring severe disease with high mortality. Cystatin C (Cys-C), as a biomarker of early kidney failure, can be used to detect and prevent acute renal injury. In this paper, a biosensor based on a silicon nanowire field-effect transistor (SiNW FET) was studied for the quantitative detection of Cys-C. Based on the spacer image transfer (SIT) processes and channel doping optimization for higher sensitivity, a wafer-scale, highly controllable SiNW FET was designed and fabricated with a 13.5 nm SiNW. In order to improve the specificity, Cys-C antibodies were modified on the oxide layer of the SiNW surface by oxygen plasma treatment and silanization. Furthermore, a polydimethylsiloxane (PDMS) microchannel was involved in improving the effectiveness and stability of detection. The experimental results show that the SiNW FET sensors realize the lower limit of detection (LOD) of 0.25 ag/mL and have a good linear correlation in the range of Cys-C concentration from 1 ag/mL to 10 pg/mL, exhibiting its great potential in the future real-time application.
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Affiliation(s)
- Jiawei Hu
- School of Information Science and Technology, North China University of Technology, Beijing 100144, China
- Advanced Integrated Circuits R&D Center, Institute of Microelectronic of the Chinese Academy of Sciences, Beijing 100029, China
| | - Yinglu Li
- School of Information Science and Technology, North China University of Technology, Beijing 100144, China
- Advanced Integrated Circuits R&D Center, Institute of Microelectronic of the Chinese Academy of Sciences, Beijing 100029, China
| | - Xufang Zhang
- School of Information Science and Technology, North China University of Technology, Beijing 100144, China
| | - Yanrong Wang
- School of Information Science and Technology, North China University of Technology, Beijing 100144, China
| | - Jing Zhang
- School of Information Science and Technology, North China University of Technology, Beijing 100144, China
| | - Jiang Yan
- School of Information Science and Technology, North China University of Technology, Beijing 100144, China
| | - Junjie Li
- Advanced Integrated Circuits R&D Center, Institute of Microelectronic of the Chinese Academy of Sciences, Beijing 100029, China
| | - Zhaohao Zhang
- Advanced Integrated Circuits R&D Center, Institute of Microelectronic of the Chinese Academy of Sciences, Beijing 100029, China
| | - Huaxiang Yin
- Advanced Integrated Circuits R&D Center, Institute of Microelectronic of the Chinese Academy of Sciences, Beijing 100029, China
| | - Qianhui Wei
- State Key Laboratory of Advanced Materials for Smart Sensing, General Research Institute for Nonferrous Metals, Beijing 101402, China
| | - Qifeng Jiang
- School of Information Science and Technology, North China University of Technology, Beijing 100144, China
| | - Shuhua Wei
- School of Information Science and Technology, North China University of Technology, Beijing 100144, China
| | - Qingzhu Zhang
- Advanced Integrated Circuits R&D Center, Institute of Microelectronic of the Chinese Academy of Sciences, Beijing 100029, China
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Silicon Nanowires Length and Numbers Dependence on Sensitivity of the Field-Effect Transistor Sensor for Hepatitis B Virus Surface Antigen Detection. BIOSENSORS 2022; 12:bios12020115. [PMID: 35200375 PMCID: PMC8869653 DOI: 10.3390/bios12020115] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/13/2022] [Revised: 02/10/2022] [Accepted: 02/11/2022] [Indexed: 12/22/2022]
Abstract
Silicon nanowire field effect transistor (NWFET) sensors have been demonstrated to have high sensitivity, are label free, and offer specific detection. This study explored the effect of nanowire dimensions on sensors’ sensitivity. We used sidewall spacer etching to fabricate polycrystalline silicon NWFET sensors. This method does not require expensive nanoscale exposure systems and reduces fabrication costs. We designed transistor sensors with nanowires of various lengths and numbers. Hepatitis B surface antigen (HBsAg) was used as the sensing target to explore the relationships of nanowire length and number with biomolecule detection. The experimental results revealed that the sensor with a 3 µm nanowire exhibited high sensitivity in detecting low concentrations of HBsAg. However, the sensor reached saturation when the biomolecule concentration exceeded 800 fg/mL. Sensors with 1.6 and 5 µm nanowires exhibited favorable linear sensing ranges at concentrations from 800 ag/mL to 800 pg/mL. The results regarding the number of nanowires revealed that the use of few nanowires in transistor sensors increases sensitivity. The results demonstrate the effects of nanowire dimensions on the silicon NWFET biosensors.
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Zhao W, Hu J, Liu J, Li X, Sun S, Luan X, Zhao Y, Wei S, Li M, Zhang Q, Huang C. Si nanowire Bio-FET for electrical and label-free detection of cancer cell-derived exosomes. MICROSYSTEMS & NANOENGINEERING 2022; 8:57. [PMID: 35655901 PMCID: PMC9151647 DOI: 10.1038/s41378-022-00387-x] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/10/2022] [Revised: 03/17/2022] [Accepted: 04/13/2022] [Indexed: 05/11/2023]
Abstract
Exosomes are highly important in clinical diagnosis due to their high homology with their parental cells. However, conventional exosome detection methods still face the challenges of expensive equipment, low sensitivity, and complex procedures. Field effect transistors (FETs) are not only the most essential electronic component in the modern microelectronics industry but also show great potential for biomolecule detection owing to the advantages of rapid response, high sensitivity, and label-free detection. In this study, we proposed a Si nanowire field-effect transistor (Si-NW Bio-FET) device chemically modified with specific antibodies for the electrical and label-free detection of exosomes. The Si-NW FETs were fabricated by standard microelectronic processes with 45 nm width nanowires and packaged in a polydimethylsiloxane (PDMS) microfluidic channel. The nanowires were further modified with the specific CD63 antibody to form a Si-NW Bio-FET. The use of the developed Si-NW Bio-FET for the electrical and label-free detection of exosomes was successfully demonstrated with a limit of detection (LOD) of 2159 particles/mL. In contrast to other technologies, in this study, Si-NW Bio-FET provides a unique strategy for directly quantifying and real-time detecting exosomes without labeling, indicating its potential as a tool for the early diagnosis of cancer.
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Affiliation(s)
- Wenjie Zhao
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 People’s Republic of China
- School of Future Technology, University of Chinese Academy of Sciences, Beijing, 100049 People’s Republic of China
| | - Jiawei Hu
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 People’s Republic of China
- School of Information Science and Technology, North China University of Technology, Beijing, 100144 People’s Republic of China
| | - Jinlong Liu
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 People’s Republic of China
| | - Xin Li
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 People’s Republic of China
- School of Future Technology, University of Chinese Academy of Sciences, Beijing, 100049 People’s Republic of China
| | - Sheng Sun
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 People’s Republic of China
| | - Xiaofeng Luan
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 People’s Republic of China
- School of Future Technology, University of Chinese Academy of Sciences, Beijing, 100049 People’s Republic of China
| | - Yang Zhao
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 People’s Republic of China
| | - Shuhua Wei
- School of Information Science and Technology, North China University of Technology, Beijing, 100144 People’s Republic of China
| | - Mingxiao Li
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 People’s Republic of China
| | - Qingzhu Zhang
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 People’s Republic of China
| | - Chengjun Huang
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 People’s Republic of China
- School of Future Technology, University of Chinese Academy of Sciences, Beijing, 100049 People’s Republic of China
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Protein biosensor based on Schottky barrier nanowire field effect transistor. Talanta 2021; 239:123092. [PMID: 34856478 DOI: 10.1016/j.talanta.2021.123092] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/22/2021] [Revised: 11/18/2021] [Accepted: 11/22/2021] [Indexed: 02/07/2023]
Abstract
A top-down nanofabrication approach involving molecular beam epitaxy and electron beam lithography was used to obtain silicon nanowire-based back gate field-effect transistors with Schottky contacts on silicon-on-insulator (SOI) wafers. The resulting device is applied in biomolecular detection based on the changes in the drain-source current (IDS). In this context, we have explained the physical mechanisms of charge carrier transport in the nanowire using energy band diagrams and numerical 2D simulations in TCAD. The results of the experiment and numerical modeling matched well and may be used to develop novel types of nanowire-based biosensors.
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Yong SK, Shen SK, Chiang CW, Weng YY, Lu MP, Yang YS. Silicon Nanowire Field-Effect Transistor as Label-Free Detection of Hepatitis B Virus Proteins with Opposite Net Charges. BIOSENSORS 2021; 11:bios11110442. [PMID: 34821658 PMCID: PMC8615946 DOI: 10.3390/bios11110442] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/17/2021] [Revised: 10/28/2021] [Accepted: 11/04/2021] [Indexed: 12/14/2022]
Abstract
The prevalence of hepatitis B virus (HBV) is a global healthcare threat, particularly chronic hepatitis B (CHB) that might lead to hepatocellular carcinoma (HCC) should not be neglected. Although many types of HBV diagnosis detection methods are available, some technical challenges, such as the high cost or lack of practical feasibility, need to be overcome. In this study, the polycrystalline silicon nanowire field-effect transistors (pSiNWFETs) were fabricated through commercial process technology and then chemically functionalized for sensing hepatitis B virus surface antigen (HBsAg) and hepatitis B virus X protein (HBx) at the femto-molar level. These two proteins have been suggested to be related to the HCC development, while the former is also the hallmark for HBV diagnosis, and the latter is an RNA-binding protein. Interestingly, these two proteins carried opposite net charges, which could serve as complementary candidates for evaluating the charge-based sensing mechanism in the pSiNWFET. The measurements on the threshold voltage shifts of pSiNWFETs showed a consistent correspondence to the polarity of the charges on the proteins studied. We believe that this report can pave the way towards developing an approachable tool for biomedical applications.
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Affiliation(s)
- Suh Kuan Yong
- Department of Biological Science and Technology, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan;
| | - Shang-Kai Shen
- Institute of Biomedical Engineering, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan; (S.-K.S.); (C.-W.C.); (Y.-Y.W.)
| | - Chia-Wei Chiang
- Institute of Biomedical Engineering, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan; (S.-K.S.); (C.-W.C.); (Y.-Y.W.)
| | - Ying-Ya Weng
- Institute of Biomedical Engineering, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan; (S.-K.S.); (C.-W.C.); (Y.-Y.W.)
| | - Ming-Pei Lu
- Taiwan Semiconductor Research Institute, National Applied Research Laboratories, Hsinchu 300, Taiwan
- Correspondence: (M.-P.L.); (Y.-S.Y.)
| | - Yuh-Shyong Yang
- Department of Biological Science and Technology, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan;
- Correspondence: (M.-P.L.); (Y.-S.Y.)
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Panahi A, Sadighbayan D, Forouhi S, Ghafar-Zadeh E. Recent Advances of Field-Effect Transistor Technology for Infectious Diseases. BIOSENSORS-BASEL 2021; 11:bios11040103. [PMID: 33918325 PMCID: PMC8065562 DOI: 10.3390/bios11040103] [Citation(s) in RCA: 26] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/22/2021] [Revised: 03/16/2021] [Accepted: 03/19/2021] [Indexed: 02/07/2023]
Abstract
Field-effect transistor (FET) biosensors have been intensively researched toward label-free biomolecule sensing for different disease screening applications. High sensitivity, incredible miniaturization capability, promising extremely low minimum limit of detection (LoD) at the molecular level, integration with complementary metal oxide semiconductor (CMOS) technology and last but not least label-free operation were amongst the predominant motives for highlighting these sensors in the biosensor community. Although there are various diseases targeted by FET sensors for detection, infectious diseases are still the most demanding sector that needs higher precision in detection and integration for the realization of the diagnosis at the point of care (PoC). The COVID-19 pandemic, nevertheless, was an example of the escalated situation in terms of worldwide desperate need for fast, specific and reliable home test PoC devices for the timely screening of huge numbers of people to restrict the disease from further spread. This need spawned a wave of innovative approaches for early detection of COVID-19 antibodies in human swab or blood amongst which the FET biosensing gained much more attention due to their extraordinary LoD down to femtomolar (fM) with the comparatively faster response time. As the FET sensors are promising novel PoC devices with application in early diagnosis of various diseases and especially infectious diseases, in this research, we have reviewed the recent progress on developing FET sensors for infectious diseases diagnosis accompanied with a thorough discussion on the structure of Chem/BioFET sensors and the readout circuitry for output signal processing. This approach would help engineers and biologists to gain enough knowledge to initiate their design for accelerated innovations in response to the need for more efficient management of infectious diseases like COVID-19.
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Affiliation(s)
- Abbas Panahi
- Biologically Sensors and Actuators (BioSA) Laboratory, Lassonde School of Engineering, York University, Keel Street, Toronto, ON M3J 1P3, Canada; (A.P.); (D.S.); (S.F.)
- Department of Electrical Engineering and Computer Science, Lassonde School of Engineering, York University, Keel Street, Toronto, ON M3J 1P3, Canada
| | - Deniz Sadighbayan
- Biologically Sensors and Actuators (BioSA) Laboratory, Lassonde School of Engineering, York University, Keel Street, Toronto, ON M3J 1P3, Canada; (A.P.); (D.S.); (S.F.)
- Department of Biology, Faculty of Science, York University, Keel Street, Toronto, ON M3J 1P3, Canada
| | - Saghi Forouhi
- Biologically Sensors and Actuators (BioSA) Laboratory, Lassonde School of Engineering, York University, Keel Street, Toronto, ON M3J 1P3, Canada; (A.P.); (D.S.); (S.F.)
- Department of Electrical Engineering and Computer Science, Lassonde School of Engineering, York University, Keel Street, Toronto, ON M3J 1P3, Canada
| | - Ebrahim Ghafar-Zadeh
- Biologically Sensors and Actuators (BioSA) Laboratory, Lassonde School of Engineering, York University, Keel Street, Toronto, ON M3J 1P3, Canada; (A.P.); (D.S.); (S.F.)
- Department of Electrical Engineering and Computer Science, Lassonde School of Engineering, York University, Keel Street, Toronto, ON M3J 1P3, Canada
- Department of Biology, Faculty of Science, York University, Keel Street, Toronto, ON M3J 1P3, Canada
- Correspondence: ; Tel.: +1-(416)-736-2100 (ext. 44646)
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