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Kim J, Lee J, Lee JM, Facchetti A, Marks TJ, Park SK. Recent Advances in Low-Dimensional Nanomaterials for Photodetectors. SMALL METHODS 2024; 8:e2300246. [PMID: 37203281 DOI: 10.1002/smtd.202300246] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2023] [Revised: 04/21/2023] [Indexed: 05/20/2023]
Abstract
New emerging low-dimensional such as 0D, 1D, and 2D nanomaterials have attracted tremendous research interests in various fields of state-of-the-art electronics, optoelectronics, and photonic applications due to their unique structural features and associated electronic, mechanical, and optical properties as well as high-throughput fabrication for large-area and low-cost production and integration. Particularly, photodetectors which transform light to electrical signals are one of the key components in modern optical communication and developed imaging technologies for whole application spectrum in the daily lives, including X-rays and ultraviolet biomedical imaging, visible light camera, and infrared night vision and spectroscopy. Today, diverse photodetector technologies are growing in terms of functionality and performance beyond the conventional silicon semiconductor, and low-dimensional nanomaterials have been demonstrated as promising potential platforms. In this review, the current states of progress on the development of these nanomaterials and their applications in the field of photodetectors are summarized. From the elemental combination for material design and lattice structure to the essential investigations of hybrid device architectures, various devices and recent developments including wearable photodetectors and neuromorphic applications are fully introduced. Finally, the future perspectives and challenges of the low-dimensional nanomaterials based photodetectors are also discussed.
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Affiliation(s)
- Jaehyun Kim
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Junho Lee
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, South Korea
| | - Jong-Min Lee
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, South Korea
| | - Antonio Facchetti
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Tobin J Marks
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Sung Kyu Park
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, South Korea
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Elahi E, Ahmad M, Dahshan A, Rabeel M, Saleem S, Nguyen VH, Hegazy HH, Aftab S. Contemporary innovations in two-dimensional transition metal dichalcogenide-based P-N junctions for optoelectronics. NANOSCALE 2023; 16:14-43. [PMID: 38018395 DOI: 10.1039/d3nr04547a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/30/2023]
Abstract
Two-dimensional transition metal dichalcogenides (2D-TMDCs) with various physical characteristics have attracted significant interest from the scientific and industrial worlds in the years following Moore's law. The p-n junction is one of the earliest electrical components to be utilized in electronics and optoelectronics, and modern research on 2D materials has renewed interest in it. In this regard, device preparation and application have evolved substantially in this decade. 2D TMDCs provide unprecedented flexibility in the construction of innovative p-n junction device designs, which is not achievable with traditional bulk semiconductors. It has been investigated using 2D TMDCs for various junctions, including homojunctions, heterojunctions, P-I-N junctions, and broken gap junctions. To achieve high-performance p-n junctions, several issues still need to be resolved, such as developing 2D TMDCs of superior quality, raising the rectification ratio and quantum efficiency, and successfully separating the photogenerated electron-hole pairs, among other things. This review comprehensively details the various 2D-based p-n junction geometries investigated with an emphasis on 2D junctions. We investigated the 2D p-n junctions utilized in current rectifiers and photodetectors. To make a comparison of various devices easier, important optoelectronic and electronic features are presented. We thoroughly assessed the review's prospects and challenges for this emerging field of study. This study will serve as a roadmap for more real-world photodetection technology applications.
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Affiliation(s)
- Ehsan Elahi
- Department of Physics & Astronomy and Graphene Research Institute, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea.
| | - Muneeb Ahmad
- Department of Electrical Engineering and Convergence Engineering for Intelligent Drone, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea
| | - A Dahshan
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
| | - Muhammad Rabeel
- Department of Electrical Engineering and Convergence Engineering for Intelligent Drone, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea
| | - Sidra Saleem
- Division of Science Education, Department of Energy Storage/Conversion Engineering for Graduate School, Jeonbuk National University, Jeonju, Jeonbuk 54896, Republic of Korea
| | - Van Huy Nguyen
- Department of Nanotechnology and Advanced Materials Engineering, and H.M.C., Sejong University, Seoul 05006, South Korea
| | - H H Hegazy
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
- Research Centre for Advanced Materials Science (RCAMS), King Khalid University, P. O. Box 9004, Abha 61413, Saudi Arabia
| | - Sikandar Aftab
- Department of Intelligent Mechatronics Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul, 05006 South Korea.
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Madhurantakam S, Mathew G, David BE, Naqvi A, Prasad S. Recent Progress in Transition Metal Dichalcogenides for Electrochemical Biomolecular Detection. MICROMACHINES 2023; 14:2139. [PMID: 38138308 PMCID: PMC10745343 DOI: 10.3390/mi14122139] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2023] [Revised: 11/08/2023] [Accepted: 11/18/2023] [Indexed: 12/24/2023]
Abstract
Advances in the field of nanobiotechnology are largely due to discoveries in the field of materials. Recent developments in the field of electrochemical biosensors based on transition metal nanomaterials as transducer elements have been beneficial as they possess various functionalities that increase surface area and provide well-defined active sites to accommodate elements for rapid detection of biomolecules. In recent years, transition metal dichalcogenides (TMDs) have become the focus of interest in various applications due to their considerable physical, chemical, electronic, and optical properties. It is worth noting that their unique properties can be modulated by defect engineering and morphology control. The resulting multifunctional TMD surfaces have been explored as potential capture probes for the rapid and selective detection of biomolecules. In this review, our primary focus is to delve into the synthesis, properties, design, and development of electrochemical biosensors that are based on transition metal dichalcogenides (TMDs) for the detection of biomolecules. We aim to explore the potential of TMD-based electrochemical biosensors, identify the challenges that need to be overcome, and highlight the opportunities for further future development.
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Affiliation(s)
| | | | | | | | - Shalini Prasad
- Department of Bioengineering, The University of Texas at Dallas, Richardson, TX 75248, USA; (S.M.)
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Anh NPQ, Hiep NT, Lu DV, Nguyen CQ, Hieu NN, Vi VTT. Crystal lattice and electronic and transport properties of Janus ZrSiSZ 2 (Z = N, P, As) monolayers by first-principles investigations. NANOSCALE ADVANCES 2023; 5:6705-6713. [PMID: 38024315 PMCID: PMC10662022 DOI: 10.1039/d3na00631j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/11/2023] [Accepted: 10/24/2023] [Indexed: 12/01/2023]
Abstract
From the extending requirements for using innovative materials in advanced technologies, it is necessary to explore new materials for relevant applications. In this work, we design new two-dimensional (2D) Janus ZrSiSZ2 (Z = N, P, As) monolayers and investigate their crystal lattice and dynamic stability by using density functional theory investigations. The two stable structures of ZrSiSP2 and ZrSiSAs2 are then systematically examined for thermal, energetic, and mechanical stability, and electronic and transport properties. The calculation results demonstrate that both the ZrSiSP2 and ZrSiSAs2 monolayers have good thermal stability at room temperature and high energetic/mechanical stabilities for experimental synthesis. The studied structures are found to be in-direct semiconductors. Specifically, with moderate band-gap energies of 1.04 to 1.29 eV for visible light absorption, ZrSiSP2 and ZrSiSAs2 can be considered potential candidates for photovoltaic applications. The applied biaxial strains and external electric fields slightly change the band-gap energies of the monolayers. We also calculate the carrier mobilities for the transport properties based on the deformation potential method. Due to the lower effective masses, the carrier mobilities in the x direction are higher than those in the y direction. The carrier mobilities of the ZrSiSP2 and ZrSiSAs2 monolayers are anisotropic not only in transport directions but also for the electrons and holes. We believe that the results of our work may stimulate further studies to explore more new 2D Janus monolayers with novel properties of the MA2Z4 family materials.
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Affiliation(s)
- Nguyen P Q Anh
- Faculty of Electrical, Electronics and Materials Technology, University of Sciences, Hue University Hue 530000 Vietnam
| | - Nguyen T Hiep
- Institute of Research and Development, Duy Tan University Da Nang 550000 Vietnam
- Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam
| | - D V Lu
- Faculty of Physics, The University of Danang - University of Science and Education Da Nang 550000 Vietnam
| | - Cuong Q Nguyen
- Institute of Research and Development, Duy Tan University Da Nang 550000 Vietnam
- Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam
| | - Nguyen N Hieu
- Institute of Research and Development, Duy Tan University Da Nang 550000 Vietnam
- Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam
| | - Vo T T Vi
- Faculty of Basic Sciences, University of Medicine and Pharmacy, Hue University Hue 530000 Vietnam
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Shimizu K. Near-Infrared Transillumination for Macroscopic Functional Imaging of Animal Bodies. BIOLOGY 2023; 12:1362. [PMID: 37997961 PMCID: PMC10668962 DOI: 10.3390/biology12111362] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/14/2023] [Revised: 10/17/2023] [Accepted: 10/18/2023] [Indexed: 11/25/2023]
Abstract
The classical transillumination technique has been revitalized through recent advancements in optical technology, enhancing its applicability in the realm of biomedical research. With a new perspective on near-axis scattered light, we have harnessed near-infrared (NIR) light to visualize intricate internal light-absorbing structures within animal bodies. By leveraging the principle of differentiation, we have extended the applicability of the Beer-Lambert law even in cases of scattering-dominant media, such as animal body tissues. This approach facilitates the visualization of dynamic physiological changes occurring within animal bodies, thereby enabling noninvasive, real-time imaging of macroscopic functionality in vivo. An important challenge inherent to transillumination imaging lies in the image blur caused by pronounced light scattering within body tissues. By extracting near-axis scattered components from the predominant diffusely scattered light, we have achieved cross-sectional imaging of animal bodies. Furthermore, we have introduced software-based techniques encompassing deconvolution using the point spread function and the application of deep learning principles to counteract the scattering effect. Finally, transillumination imaging has been elevated from two-dimensional to three-dimensional imaging. The effectiveness and applicability of these proposed techniques have been validated through comprehensive simulations and experiments involving human and animal subjects. As demonstrated through these studies, transillumination imaging coupled with emerging technologies offers a promising avenue for future biomedical applications.
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Affiliation(s)
- Koichi Shimizu
- School of Optoelectronic Engineering, Xidian University, Xi’an 710071, China;
- IPS Research Center, Waseda University, Kitakyushu 808-0135, Japan
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Guo L, Hu K, Wang H. Antimicrobial and Mechanical Properties of Ag@Ti 3C 2T x-Modified PVA Composite Hydrogels Enhanced with Quaternary Ammonium Chitosan. Polymers (Basel) 2023; 15:polym15102352. [PMID: 37242927 DOI: 10.3390/polym15102352] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/19/2023] [Revised: 05/11/2023] [Accepted: 05/11/2023] [Indexed: 05/28/2023] Open
Abstract
Polyvinyl alcohol (PVA) is a polymeric material with good biocompatibility, excellent hydrophilicity, and a large number of hydroxyl groups. However, due to its insufficient mechanical properties and poor inhibition of bacteria, it has a lack of applications in wound dressings, stent materials, and other fields. In this study, a simple method was used to prepare composite gel materials: Ag@MXene-HACC-PVA hydrogels with a double-network structure were prepared using an acetal reaction. Due to the double cross-linked interaction, the hydrogel has good mechanical properties and is resistant to swelling. The adhesion and bacterial inhibition were enhanced due to the addition of HACC. In addition, the strain sensing properties of this conductive hydrogel were stable, and the GF (specification factor) was 1.7617 at 40-90% strain. Therefore, the dual-network hydrogel with excellent sensing properties, adhesion properties, antibacterial properties, and cytocompatibility has potential applications in biomedical materials, especially as a tissue engineering repair material.
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Affiliation(s)
- Linxinzheng Guo
- Beijing Engineering Research Center of Printed Electronics, Institute of Printing and Packaging Engineering, Beijing Institute of Graphic Communication, Beijing 102600, China
| | - Kun Hu
- Beijing Engineering Research Center of Printed Electronics, Institute of Printing and Packaging Engineering, Beijing Institute of Graphic Communication, Beijing 102600, China
- Collage of Biological Science and Engineering, Fuzhou University, Fuzhou 350108, China
| | - Haibo Wang
- Beijing Engineering Research Center of Printed Electronics, Institute of Printing and Packaging Engineering, Beijing Institute of Graphic Communication, Beijing 102600, China
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Ye X, Du Y, Wang M, Liu B, Liu J, Jafri SHM, Liu W, Papadakis R, Zheng X, Li H. Advances in the Field of Two-Dimensional Crystal-Based Photodetectors. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1379. [PMID: 37110964 PMCID: PMC10146229 DOI: 10.3390/nano13081379] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/08/2023] [Revised: 03/27/2023] [Accepted: 04/14/2023] [Indexed: 06/19/2023]
Abstract
Two-dimensional (2D) materials have sparked intense interest among the scientific community owing to their extraordinary mechanical, optical, electronic, and thermal properties. In particular, the outstanding electronic and optical properties of 2D materials make them show great application potential in high-performance photodetectors (PDs), which can be applied in many fields such as high-frequency communication, novel biomedical imaging, national security, and so on. Here, the recent research progress of PDs based on 2D materials including graphene, transition metal carbides, transition-metal dichalcogenides, black phosphorus, and hexagonal boron nitride is comprehensively and systematically reviewed. First, the primary detection mechanism of 2D material-based PDs is introduced. Second, the structure and optical properties of 2D materials, as well as their applications in PDs, are heavily discussed. Finally, the opportunities and challenges of 2D material-based PDs are summarized and prospected. This review will provide a reference for the further application of 2D crystal-based PDs.
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Affiliation(s)
- Xiaoling Ye
- Shandong Technology Centre of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan 250101, China; (X.Y.); (Y.D.); (M.W.); (B.L.); (W.L.)
| | - Yining Du
- Shandong Technology Centre of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan 250101, China; (X.Y.); (Y.D.); (M.W.); (B.L.); (W.L.)
| | - Mingyang Wang
- Shandong Technology Centre of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan 250101, China; (X.Y.); (Y.D.); (M.W.); (B.L.); (W.L.)
| | - Benqing Liu
- Shandong Technology Centre of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan 250101, China; (X.Y.); (Y.D.); (M.W.); (B.L.); (W.L.)
| | - Jiangwei Liu
- School of Energy and Power Engineering, Shandong University, Jinan 250061, China;
| | - Syed Hassan Mujtaba Jafri
- Department of Electrical Engineering, Mirpur University of Science and Technology (MUST), Mirpur Azad Jammu and Kashmir 10250, Pakistan;
| | - Wencheng Liu
- Shandong Technology Centre of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan 250101, China; (X.Y.); (Y.D.); (M.W.); (B.L.); (W.L.)
| | - Raffaello Papadakis
- Department of Chemistry, Uppsala University, 75120 Uppsala, Sweden;
- TdB Labs AB, Uppsala Business Park, 75450 Uppsala, Sweden
| | - Xiaoxiao Zheng
- Shandong Technology Centre of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan 250101, China; (X.Y.); (Y.D.); (M.W.); (B.L.); (W.L.)
| | - Hu Li
- Shandong Technology Centre of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan 250101, China; (X.Y.); (Y.D.); (M.W.); (B.L.); (W.L.)
- Shenzhen Research Institute of Shandong University, Shenzhen 518057, China
- Department of Materials Science and Engineering, Uppsala University, 75121 Uppsala, Sweden
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Hiep NT, Anh NPQ, Phuc HV, Nguyen CQ, Hieu NN, Vi VTT. Two-dimensional Janus MGeSiP 4 (M = Ti, Zr, and Hf) with an indirect band gap and high carrier mobilities: first-principles calculations. Phys Chem Chem Phys 2023; 25:8779-8788. [PMID: 36912122 DOI: 10.1039/d3cp00188a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/25/2023]
Abstract
Novel Janus materials have attracted broad interest due to the outstanding properties created by their out-of-plane asymmetry, with increasing theoretical exploration and more reports of successful fabrication in recent years. Here, we construct and explore the crystal structures, stabilities, electronic band structures, and transport properties - including carrier mobilities - of two-dimensional Janus MGeSiP4 (M = Ti, Zr, or Hf) monolayers based on density functional theory calculations. From the cohesive energies, elastic constants, and phonon dispersion calculations, the monolayers are confirmed to exhibit structural stability with high feasibility for experimental synthesis. All the structures are indirect band-gap semiconductors with calculated band-gap energies in the range of 0.77 eV to 1.01 eV at the HSE06 (Heyd-Scuseria-Ernzerhof) level. Interestingly, by applying external biaxial strain, a semiconductor to metal phase transition is observed for the three Janus structures. This suggests potential for promising applications in optoelectronic and electromechanical devices. Notably, the MGeSiP4 monolayers show directionally anisotropic carrier mobility with a high electron mobility of up to 2.72 × 103 cm2 V-1 s-1 for the ZrGeSiP4 monolayer, indicating advantages for applications in electronic devices. Hence, the presented results reveal the novel properties of the 2D Janus MGeSiP4 monolayers and demonstrate their great potential applications in nanoelectronic and/or optoelectronic devices. This investigation could stimulate further theoretical and experimental studies on these excellent materials and motivate further explorations of new members of this 2D Janus family.
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Affiliation(s)
- Nguyen T Hiep
- Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam
- Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam
| | - Nguyen P Q Anh
- Faculty of Electrical, Electronics and Materials Technology University of Sciences, Hue University, Hue, Vietnam
| | - Huynh V Phuc
- Division of Theoretical Physics, Dong Thap University, Cao Lanh 870000, Vietnam
| | - Cuong Q Nguyen
- Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam
- Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam
| | - Nguyen N Hieu
- Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam
- Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam
| | - Vo T T Vi
- Department of Fundamental Sciences, University of Medicine and Pharmacy, Hue University, Hue 530000, Vietnam.
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Xie H, Kang C, Iqbal MA, Weng X, Wu K, Tang W, Qi L, Zeng YJ. Ferroelectric Tuning of ZnO Ultraviolet Photodetectors. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3358. [PMID: 36234488 PMCID: PMC9565710 DOI: 10.3390/nano12193358] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/31/2022] [Revised: 09/23/2022] [Accepted: 09/23/2022] [Indexed: 06/16/2023]
Abstract
The ferroelectric field effect transistor (Fe-FET) is considered to be one of the most important low-power and high-performance devices. It is promising to combine a ferroelectric field effect with a photodetector to improve the photodetection performance. This study proposes a strategy for ZnO ultraviolet (UV) photodetectors regulated by a ferroelectric gate. The ZnO nanowire (NW) UV photodetector was tuned by a 2D CuInP2S6 (CIPS) ferroelectric gate, which decreased the dark current and enhanced the responsivity and detectivity to 2.40 × 104 A/W and 7.17 × 1011 Jones, respectively. This strategy was also applied to a ZnO film UV photodetector that was tuned by a P(VDF-TrFE) ferroelectric gate. Lower power consumption and higher performance can be enabled by ferroelectric tuning of ZnO ultraviolet photodetectors, providing new inspiration for the fabrication of high-performance photodetectors.
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