1
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Alaei A, Mohajerani SS, Schmelmer B, Rubio TI, Bendesky J, Kim MW, Ma Y, Jeong S, Zhou Q, Klopfenstein M, Avalos CE, Strauf S, Lee SS. Scaffold-Guided Crystallization of Oriented α-FAPbI 3 Nanowire Arrays for Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2023; 15:56127-56137. [PMID: 37987696 DOI: 10.1021/acsami.3c09434] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/22/2023]
Abstract
Perovskite nanowire arrays with large surface areas for efficient charge transfer and continuous highly crystalline domains for efficient charge transport exhibit ideal morphologies for solar-cell active layers. Here, we introduce a room temperature two-step method to grow dense, vertical nanowire arrays of formamidinium lead iodide (FAPbI3). PbI2 nanocrystals embedded in the cylindrical nanopores of anodized titanium dioxide scaffolds were converted to FAPbI3 by immersion in a FAI solution for a period of 0.5-30 min. During immersion, FAPbI3 crystals grew vertically from the scaffold surface as nanowires with diameters and densities determined by the underlying scaffold. The presence of butylammonium cations during nanowire growth stabilized the active α polymorph of FAPbI3, precluding the need for a thermal annealing step. Solar cells comprising α-FAPbI3 nanowire arrays exhibited maximum solar conversion efficiencies of >14%. Short-circuit current densities of 22-23 mA cm-2 were achieved, on par with those recorded for the best-performing FAPbI3 solar cells reported to date. Such large photocurrents are attributed to the single-crystalline, low-defect nature of the nanowires and increased interfacial area for photogenerated charge transfer compared with thin films.
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Affiliation(s)
- Aida Alaei
- Department of Chemistry and Molecular Design Institute, New York University, New York, New York 10003, United States
| | - Seyed Sepehr Mohajerani
- Department of Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030, United States
| | - Ben Schmelmer
- Department of Chemistry and Molecular Design Institute, New York University, New York, New York 10003, United States
| | - Thiago I Rubio
- Department of Chemistry and Molecular Design Institute, New York University, New York, New York 10003, United States
| | - Justin Bendesky
- Department of Chemistry and Molecular Design Institute, New York University, New York, New York 10003, United States
| | - Min-Woo Kim
- Department of Chemistry and Molecular Design Institute, New York University, New York, New York 10003, United States
| | - Yichen Ma
- Department of Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030, United States
| | - Sehee Jeong
- Department of Chemistry and Molecular Design Institute, New York University, New York, New York 10003, United States
| | - Qintian Zhou
- Department of Chemistry and Molecular Design Institute, New York University, New York, New York 10003, United States
| | - Mia Klopfenstein
- Department of Chemistry and Molecular Design Institute, New York University, New York, New York 10003, United States
| | - Claudia E Avalos
- Department of Chemistry and Molecular Design Institute, New York University, New York, New York 10003, United States
| | - Stefan Strauf
- Department of Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030, United States
| | - Stephanie S Lee
- Department of Chemistry and Molecular Design Institute, New York University, New York, New York 10003, United States
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2
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Gou R, Shi C, Zhou S, Huang Z, Ouyang Z, He S, Zhao J, Xiao Y, Lei S, Cheng B. Self-Powered Photodetector Based on Ag/CH 3NH 3PbI 3/C Asymmetric Dual-Terminal Device. ACS APPLIED MATERIALS & INTERFACES 2023; 15:54863-54874. [PMID: 37966314 DOI: 10.1021/acsami.3c13839] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2023]
Abstract
CH3NH3PbI3 is capable of exhibiting a superior photoresponse to visible light, but its self-powered devices are typically formed through p-n junctions. In this study, we fabricated a Ag/CH3NH3PbI3/C dual-terminal asymmetric electrode device using a single CH3NH3PbI3 perovskite micro/nanowire, enabling both the photoresponse and self-powered characteristics of CH3NH3PbI3 to visible light. Compared with traditional p-n junction devices, this simple device demonstrates enhanced interface photovoltaic effects by optimizing the combination of the Ag electrode with CH3NH3PbI3, resulting in superior self-powered characteristics. Under low bias voltage, the device achieves a significant on/off ratio of 103, with superior sensitivity and responsivity as well as a maximum rectification ratio of about 12. The photogenerated voltage and current reach approximately 0.8 V and 2 nA, respectively. This simple, compact, and self-powered asymmetric device exhibits great potential for applications in self-powered optoelectronics and wearable devices. This research provides a promising approach for recognizing and utilizing surface state effects in single nanoscale structures.
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Affiliation(s)
- Runna Gou
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, P. R. China
- School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, P. R. China
| | - Cencen Shi
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Nanchang 330031, P. R. China
| | - Shuanfu Zhou
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, P. R. China
| | - Zhikang Huang
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, P. R. China
| | - Zhiyong Ouyang
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Nanchang 330031, P. R. China
- School of Materials and Energy, Jiangxi Science and Technology Normal University, Nanchang 330038, P. R. China
| | - Song He
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, P. R. China
| | - Jie Zhao
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, P. R. China
| | - Yanhe Xiao
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, P. R. China
| | - Shuijin Lei
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, P. R. China
| | - Baochang Cheng
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, P. R. China
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Nanchang 330031, P. R. China
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3
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Hong Z, Quan H, Ke C, Ouyang Z, Cheng B. Controllably modulated asymmetrical photoresponse with a nonvolatile memory effect in a single CH 3NH 3PbI 3 micro/nanowire for photorectifiers and photomemory. NANOSCALE 2023; 15:13359-13370. [PMID: 37527151 DOI: 10.1039/d3nr01921g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/03/2023]
Abstract
Nanostructured hybrid organic-inorganic perovskites exhibit remarkable photodetection performance due to their abundant surface states and high responsivity to visible light. However, in traditional photodetectors with a symmetrical configuration of two-terminal electrodes, the photoresponse is independent of bias polarity. Moreover, for self-powered photodetectors, an asymmetric structure of the chemical composition, such as p-n and Schottky junctions, and two different electrodes are necessary. Herein, we demonstrate a modulable asymmetrical photoresponse by packing only one electrode end in a single CH3NH3PbI3 micro/nanowire with two symmetrical Ag electrodes. This not only enables the high performance of light- and bias-modulated multifunctional photorectifiers and self-powered photodetectors, but also allows controllable implementation of nonvolatile photomemory with a tunable spectral responsivity and range. At an unpacked electrode interface, trace moisture in the environment promotes a good bonding of Ag+ and I-, substantially decreasing the interface barrier. Conversely, at a packed electrode interface, abundant surface states can be well preserved, leading to a high interface barrier. Notably, under a large voltage and strong light, the redox of Ag/AgI at the unpacked electrode interface and the injection and ejection of holes at the packed electrode interface can be reversibly conducted by inverting the voltage polarity, enabling a controllable nonvolatile modulation. Therefore, by clarifying the actual origin of the photoelectrical response of CH3NH3PbI3 micro/nanowires at electrode interfaces, high-performance multifunctional photorectifiers and self-powered photodetectors based on asymmetrical interface photovoltaic effects with two symmetrical electrodes can be controllably realized. Furthermore, by precise cooperative modulation of two electrode interface states with a large voltage and strong illumination, nonvolatile photomemory with a tunable spectral responsivity and range can be implemented.
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Affiliation(s)
- Zhen Hong
- School of Materials Science and Engineering, Nanchang Hangkong University, Jiangxi 330063, P. R. China
| | - Hongying Quan
- School of Materials Science and Engineering, Nanchang Hangkong University, Jiangxi 330063, P. R. China
| | - Changying Ke
- School of Environment and Energy, Jiangxi Modern Polytechnic College, Jiang Xi 330095, P. R. China
| | - Zhiyong Ouyang
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi 330031, P. R. China.
| | - Baochang Cheng
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi 330031, P. R. China.
- School of Materials Science and Engineering, Nanchang University, Jiangxi 330031, P. R. China
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4
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Lin DY, Hsu HP, Wang CW, Chen SW, Shih YT, Hwang SB, Sitarek P. Temperature-Dependent Absorption of Ternary HfS 2-xSe x 2D Layered Semiconductors. MATERIALS (BASEL, SWITZERLAND) 2022; 15:6304. [PMID: 36143616 PMCID: PMC9502516 DOI: 10.3390/ma15186304] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/05/2022] [Revised: 08/27/2022] [Accepted: 09/07/2022] [Indexed: 06/16/2023]
Abstract
In this study, we present the investigation of optical properties on a series of HfS2-xSex crystals with different Se compositions x changing from 0 to 2. We used the chemical-vapor transport method to grow these layered ternary compound semiconductors in bulk form. Their lattice constants and crystal properties were characterized by X-ray diffraction, high-resolution transmission electron microscopy, and Raman spectroscopy. We have performed absorption spectroscopies to determine their optical band-gap energies, which started from 2.012 eV with x = 0, and gradually shifts to 1.219 eV for x = 2. Furthermore, we measured the absorption spectroscopies at different temperatures in the range of 20-300 K to identify the temperature dependence of band-gap energies. The band-gap energies of HfS2-xSex were determined from the linear extrapolation method. We have noticed that the band-gap energy may be continuously tuned to the required energy by manipulating the ratio of S and Se. The parameters that describe the temperature influence on the band-gap energy are evaluated and discussed.
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Affiliation(s)
- Der-Yuh Lin
- Department of Electronic Engineering, National Changhua University of Education, Changhua City 50074, Taiwan
| | - Hung-Pin Hsu
- Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City 243, Taiwan
| | - Cheng-Wen Wang
- Department of Electronic Engineering, National Changhua University of Education, Changhua City 50074, Taiwan
| | - Shang-Wei Chen
- Department of Electronic Engineering, National Changhua University of Education, Changhua City 50074, Taiwan
| | - Yu-Tai Shih
- Department of Physics, National Changhua University of Education, Changhua City 500207, Taiwan
| | - Sheng-Beng Hwang
- Department of Electronic Engineering, Chienkuo Technology University, Changhua City 500020, Taiwan
| | - Piotr Sitarek
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, 50370 Wrocław, Poland
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5
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Fomanyuk S, Vorobets V, Rusetskyi I, Kolbasov GY, Smilyk V, Danilov M. Photoelectrochemical determination of Pb2+ by combined electrochemical-chemical precipitations of PbI2 films. J Electroanal Chem (Lausanne) 2022. [DOI: 10.1016/j.jelechem.2022.116600] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/27/2022]
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6
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Gou R, Ouyang Z, Xu C, He S, Cheng S, Shi C, Zhao J, Xiao Y, Lei S, Cheng B. Actual origin and precise control of asymmetrical hysteresis in an individual CH 3NH 3PbI 3 micro/nanowire for optical memory and logic operation. NANOSCALE HORIZONS 2022; 7:1095-1108. [PMID: 35913084 DOI: 10.1039/d2nh00209d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Although CH3NH3PbI3 can present an excellent photoresponse to visible light, its application in solar cells and photodetectors is seriously hindered due to hysteresis behaviour. Moreover, for its origin, there exist different opinions. Herein, we demonstrate a route to realize precise control for the electrical transport of a single CH3NH3PbI3 micro/nanowire by constructing a two-terminal device with asymmetric Ag and C electrodes, and its hysteresis can be clearly identified as a synergistic effect of the redox reaction at the interface of the Ag electrode and the injection and ejection of holes in the interfacial traps of the C electrode rather than its bulk effect. The device can show superior bias amplitude and illumination intensity dependence of hysteresis loops with typical bipolar resistive switching features. Thus, an excellent multilevel nonvolatile optical memory can be effectively realized by the modulation of the illumination and bias, and moreover a logic OR gate operation can be successfully implemented with voltage and illumination as input signals as well. This work clearly reveals and provides a new insight of hysteresis origin that can be attributed to a synergistic effect of two asymmetrical electrode interfaces, and therefore precisely controlling its electrical transport to realize an outstanding application potential in multifunctional devices integrated with optical nonvolatile memory and logic OR gate operation.
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Affiliation(s)
- Runna Gou
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
| | - Zhiyong Ouyang
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi, 330031, P. R. China
| | - Changsen Xu
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi, 330031, P. R. China
| | - Song He
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
| | - Shouduan Cheng
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
| | - Cencen Shi
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi, 330031, P. R. China
| | - Jie Zhao
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
| | - Yanhe Xiao
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
| | - Shuijin Lei
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
| | - Baochang Cheng
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi, 330031, P. R. China
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7
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Siegler TD, Dunlap-Shohl WA, Meng Y, Yang Y, Kau WF, Sunkari PP, Tsai CE, Armstrong ZJ, Chen YC, Beck DAC, Meilă M, Hillhouse HW. Water-Accelerated Photooxidation of CH 3NH 3PbI 3 Perovskite. J Am Chem Soc 2022; 144:5552-5561. [PMID: 35296136 DOI: 10.1021/jacs.2c00391] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022]
Abstract
Halide perovskites have the potential to disrupt the photovoltaics market based on their high performance and low cost. However, the decomposition of perovskites under moisture, oxygen, and light raises concerns about service lifetime, especially because degradation mechanisms and the corresponding rate laws that fit the observed data have thus far eluded researchers. Here, we report a water-accelerated photooxidation mechanism dominating the degradation kinetics of archetypal perovskite CH3NH3PbI3 in air under >1% relative humidity at 25 °C. From this mechanism, we develop a kinetic model that quantitatively predicts the degradation rate as a function of temperature, ambient O2 and H2O levels, and illumination. Because water is a possible product of dry photooxidation, these results highlight the need for encapsulation schemes that rigorously block oxygen ingress, as product water may accumulate beneath the encapsulant and initiate the more rapid water-accelerated photooxidative decomposition.
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Affiliation(s)
- Timothy D Siegler
- Department of Chemical Engineering, University of Washington, Seattle, Washington 98195-0005, United States.,Clean Energy Institute, University of Washington, Seattle, Washington 98195-0005, United States
| | - Wiley A Dunlap-Shohl
- Department of Chemical Engineering, University of Washington, Seattle, Washington 98195-0005, United States.,Clean Energy Institute, University of Washington, Seattle, Washington 98195-0005, United States
| | - Yuhuan Meng
- Clean Energy Institute, University of Washington, Seattle, Washington 98195-0005, United States.,Molecular Engineering and Sciences Institute, University of Washington, Seattle, Washington 98195-0005, United States
| | - Yuhang Yang
- Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195-0005, United States
| | - Wylie F Kau
- Department of Chemical Engineering, University of Washington, Seattle, Washington 98195-0005, United States.,Clean Energy Institute, University of Washington, Seattle, Washington 98195-0005, United States
| | - Preetham P Sunkari
- Department of Chemical Engineering, University of Washington, Seattle, Washington 98195-0005, United States.,Clean Energy Institute, University of Washington, Seattle, Washington 98195-0005, United States
| | - Chang En Tsai
- Department of Chemical Engineering, University of Washington, Seattle, Washington 98195-0005, United States.,Clean Energy Institute, University of Washington, Seattle, Washington 98195-0005, United States
| | - Zachary J Armstrong
- Department of Chemical Engineering, University of Washington, Seattle, Washington 98195-0005, United States.,Clean Energy Institute, University of Washington, Seattle, Washington 98195-0005, United States
| | - Yu-Chia Chen
- Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington 98195-0005, United States.,eScience Institute, University of Washington, Seattle, Washington 98195-0005, United States
| | - David A C Beck
- Department of Chemical Engineering, University of Washington, Seattle, Washington 98195-0005, United States.,Molecular Engineering and Sciences Institute, University of Washington, Seattle, Washington 98195-0005, United States.,eScience Institute, University of Washington, Seattle, Washington 98195-0005, United States
| | - Marina Meilă
- eScience Institute, University of Washington, Seattle, Washington 98195-0005, United States.,Department of Statistics, University of Washington, Seattle, Washington 98195-0005, United States
| | - Hugh W Hillhouse
- Department of Chemical Engineering, University of Washington, Seattle, Washington 98195-0005, United States.,Clean Energy Institute, University of Washington, Seattle, Washington 98195-0005, United States.,Molecular Engineering and Sciences Institute, University of Washington, Seattle, Washington 98195-0005, United States
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8
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Preparation of NbAs Single Crystal by the Seed Growth Process. CRYSTALS 2022. [DOI: 10.3390/cryst12020249] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
A Weyl semimetal is a novel crystal with low-energy electronic excitations that behave as Weyl fermions. It has received worldwide interest and was believed to have introduced the next era of condensed matter physics after graphene and three-dimensional topological insulators. However, it is not easy to obtain a single large-sized crystal because there are many nucleations in the preparation process. A bottom-seed CVT growth method is proposed in this paper, and we acquired the large-sized, high-quality NbAs single crystals up to 4 × 3 × 3 mm3 finally. X-ray diffraction and STEM confirmed that they are tetragonal NbAs, which the key is to using the seed crystal in a vertical growth furnace. Notably, the photoelectric properties of the crystal are obtained under the existing conditions, which paves the way for follow-up work.
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9
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Islam MA, Mohafez H, Sobayel K, Wan Muhamad Hatta SF, Hasan AKM, Khandaker MU, Akhtaruzzaman M, Muhammad G, Amin N. Degradation of Perovskite Thin Films and Solar Cells with Candle Soot C/Ag Electrode Exposed in a Control Ambient. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:3463. [PMID: 34947812 PMCID: PMC8705018 DOI: 10.3390/nano11123463] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/23/2021] [Revised: 12/02/2021] [Accepted: 12/10/2021] [Indexed: 12/20/2022]
Abstract
Perovskite solar cells (PSCs) have already achieved efficiencies of over 25%; however, their instability and degradation in the operational environment have prevented them from becoming commercially viable. Understanding the degradation mechanism, as well as improving the fabrication technique for achieving high-quality perovskite films, is crucial to overcoming these shortcomings. In this study, we investigated details in the changes of physical properties associated with the degradation and/or decomposition of perovskite films and solar cells using XRD, FESEM, EDX, UV-Vis, Hall-effect, and current-voltage (I-V) measurement techniques. The dissociation, as well as the intensity of perovskite peaks, have been observed as an impact of film degradation by humidity. The decomposition rate of perovskite film has been estimated from the structural and optical changes. The performance degradation of novel planner structure PSCs has been investigated in detail. The PSCs were fabricated in-room ambient using candle soot carbon and screen-printed Ag electrode. It was found that until the perovskite film decomposed by 30%, the film properties and cell efficiency remained stable.
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Affiliation(s)
- Mohammad Aminul Islam
- Department of Electrical Engineering, Faculty of Engineering, Universiti Malaya, Kuala Lumpur 50603, Malaysia;
| | - Hamidreza Mohafez
- Department of Biomedical Engineering, Faculty of Engineering, Universiti Malaya, Kuala Lumpur 50603, Malaysia
| | - Khan Sobayel
- Solar Energy Research Institute, Universiti Kebangsaan Malaysia, Bangi 43600, Malaysia; (K.S.); (A.K.M.H.); (M.A.)
| | | | - Abul Kalam Mahmud Hasan
- Solar Energy Research Institute, Universiti Kebangsaan Malaysia, Bangi 43600, Malaysia; (K.S.); (A.K.M.H.); (M.A.)
| | - Mayeen Uddin Khandaker
- Centre for Applied Physics and Radiation Technologies, School of Engineering and Technology, Sunway University, Petaling Jaya 47500, Malaysia;
| | - Md. Akhtaruzzaman
- Solar Energy Research Institute, Universiti Kebangsaan Malaysia, Bangi 43600, Malaysia; (K.S.); (A.K.M.H.); (M.A.)
- Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
| | - Ghulam Muhammad
- Department of Computer Engineering, College of Computer and Information Sciences, King Saud University, Riyadh 51178, Saudi Arabia;
| | - Nowshad Amin
- College of Engineering, Universiti Tenaga Nasional (The National Energy University), Jalan IKRAM-UNITEN, Kajang 43000, Malaysia;
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10
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Ma H, Wu X, Du W, Zhao L, Zhong Y, Chen S, Gao P, Yue S, Zhang Q, Liu W, Liu X. Edge Raman enhancement at layered PbI 2platelets induced by laser waveguide effect. NANOTECHNOLOGY 2021; 33:035203. [PMID: 34627132 DOI: 10.1088/1361-6528/ac2e5a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/13/2021] [Accepted: 10/09/2021] [Indexed: 06/13/2023]
Abstract
As a two-dimensional (2D) layered semiconductor, lead iodide (PbI2) has been widely used in optoelectronics owing to its unique crystal structure and distinctive optical and electrical properties. A comprehensive understanding of its optical performance is essential for further application and progress. Here, we synthesized regularly shaped PbI2platelets using the chemical vapor deposition method. Raman scattering spectroscopy of PbI2platelets was predominantly enhanced when the laser radiated at the edge according to Raman mapping spectroscopy. Combining the outcome of polarized Raman scattering spectroscopy and finite-difference time domain simulation analysis, the Raman enhancement was proven to be the consequence of the enhancement effects inherent to the high refractive index contrast waveguide, which is naturally formed in well-defined PbI2platelets. Because of the enlarged excited area determined by the increased propagation length of the laser in the PbI2platelet formed waveguide, the total Raman enhancements are acquired rather than a localized point enhancement. Finally, the Raman enhancement factor is directly related to the thickness of the PbI2platelet, which further confirms the waveguide-enhanced edge Raman. Our investigation of the optical properties of PbI2platelets offers reference for potential 2D layered-related optoelectronic applications.
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Affiliation(s)
- Heyi Ma
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Xianxin Wu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Wenna Du
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
| | - Liyun Zhao
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Yangguang Zhong
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Shulin Chen
- Electron Microscopy Laboratory, International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Peng Gao
- Electron Microscopy Laboratory, International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Shuai Yue
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Qing Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Wei Liu
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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11
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Toso S, Akkerman QA, Martín-García B, Prato M, Zito J, Infante I, Dang Z, Moliterni A, Giannini C, Bladt E, Lobato I, Ramade J, Bals S, Buha J, Spirito D, Mugnaioli E, Gemmi M, Manna L. Nanocrystals of Lead Chalcohalides: A Series of Kinetically Trapped Metastable Nanostructures. J Am Chem Soc 2020; 142:10198-10211. [PMID: 32374173 PMCID: PMC7737912 DOI: 10.1021/jacs.0c03577] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/01/2020] [Indexed: 11/28/2022]
Abstract
We report the colloidal synthesis of a series of surfactant-stabilized lead chalcohalide nanocrystals. Our work is mainly focused on Pb4S3Br2, a chalcohalide phase unknown to date that does not belong to the ambient-pressure PbS-PbBr2 phase diagram. The Pb4S3Br2 nanocrystals herein feature a remarkably narrow size distribution (with a size dispersion as low as 5%), a good size tunability (from 7 to ∼30 nm), an indirect bandgap, photoconductivity (responsivity = 4 ± 1 mA/W), and stability for months in air. A crystal structure is proposed for this new material by combining the information from 3D electron diffraction and electron tomography of a single nanocrystal, X-ray powder diffraction, and density functional theory calculations. Such a structure is closely related to that of the recently discovered high-pressure chalcohalide Pb4S3I2 phase, and indeed we were able to extend our synthesis scheme to Pb4S3I2 colloidal nanocrystals, whose structure matches the one that has been published for the bulk. Finally, we could also prepare nanocrystals of Pb3S2Cl2, which proved to be a structural analogue of the recently reported bulk Pb3Se2Br2 phase. It is remarkable that one high-pressure structure (for Pb4S3I2) and two metastable structures that had not yet been reported (for Pb4S3Br2 and Pb3S2Cl2) can be prepared on the nanoscale by wet-chemical approaches. This highlights the important role of colloidal chemistry in the discovery of new materials and motivates further exploration into metal chalcohalide nanocrystals.
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Affiliation(s)
- Stefano Toso
- Department
of Nanochemistry and Materials Characterization Facility, Istituto
Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
- Dipartimento
di Matematica e Fisica and Interdisciplinary Laboratories for Advanced
Materials Physics, Università Cattolica
del Sacro Cuore, Via
Musei 41, I-25121 Brescia, Italy
| | - Quinten A. Akkerman
- Department
of Nanochemistry and Materials Characterization Facility, Istituto
Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Beatriz Martín-García
- Department
of Nanochemistry and Materials Characterization Facility, Istituto
Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Mirko Prato
- Department
of Nanochemistry and Materials Characterization Facility, Istituto
Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Juliette Zito
- Department
of Nanochemistry and Materials Characterization Facility, Istituto
Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Ivan Infante
- Department
of Nanochemistry and Materials Characterization Facility, Istituto
Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
- Department
of Theoretical Chemistry, Faculty of Science, Vrije Universiteit Amsterdam, de Boelelaan 1083, 1081 HV Amsterdam, The Netherlands
| | - Zhiya Dang
- Department
of Nanochemistry and Materials Characterization Facility, Istituto
Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Anna Moliterni
- Istituto
di Cristallografia−Consiglio Nazionale delle Ricerche (IC−CNR), Via Amendola 122/O, I-70126 Bari, Italy
| | - Cinzia Giannini
- Istituto
di Cristallografia−Consiglio Nazionale delle Ricerche (IC−CNR), Via Amendola 122/O, I-70126 Bari, Italy
| | - Eva Bladt
- Electron
Microscopy for Materials Science (EMAT), University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp, Belgium
- NANOlab
Center of Excellence, University of Antwerp, 2020 Antwerp, Belgium
| | - Ivan Lobato
- Electron
Microscopy for Materials Science (EMAT), University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp, Belgium
- NANOlab
Center of Excellence, University of Antwerp, 2020 Antwerp, Belgium
| | - Julien Ramade
- Electron
Microscopy for Materials Science (EMAT), University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp, Belgium
- NANOlab
Center of Excellence, University of Antwerp, 2020 Antwerp, Belgium
| | - Sara Bals
- Electron
Microscopy for Materials Science (EMAT), University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp, Belgium
- NANOlab
Center of Excellence, University of Antwerp, 2020 Antwerp, Belgium
| | - Joka Buha
- Department
of Nanochemistry and Materials Characterization Facility, Istituto
Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Davide Spirito
- Department
of Nanochemistry and Materials Characterization Facility, Istituto
Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Enrico Mugnaioli
- Center
for Nanotechnology Innovation@NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro, 12, 56127 Pisa, Italy
| | - Mauro Gemmi
- Center
for Nanotechnology Innovation@NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro, 12, 56127 Pisa, Italy
| | - Liberato Manna
- Department
of Nanochemistry and Materials Characterization Facility, Istituto
Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
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