Magnetoelectric Force Microscopy on Antiferromagnetic 180∘ Domains in Cr₂O₃

Magnetic Force Microscopy in Physics and Biomedical Applications

Magnetic force microscopy (MFM) enables to characterize magnetic properties with submicron (nanoscale) resolution and without much demand on sample surface preparation. MFM can operate in a wide range of temperatures and environmental conditions, that is, vacuum, liquid, or air, therefore this technique has already become the most common tool used to characterize variety of magnetic materials ranging from ferromagnetic thin films and 2D materials to biomedical and/or biological materials. The purpose of this review is to provide a summary of MFM basic fundamentals in the frame of other related methods and, correspondingly, a brief overview of physics and chiefly biomedical as well as biological applications of MFM.

Magnetoelectric control of antiferromagnetic domain state in Cr2O3thin film

Magnetoelectric (ME) effect is a type of cross-coupling between unconjugated physical quantities, such as the interplay between magnetization and electric field. The ME effect requires simultaneous breaking of spatial and time inversion symmetries, and it sometimes appears in specific antiferromagnetic (AFM) insulators. In recent years, there has been a growing interest for applying the ME effect to spintronic devices, where the effect is utilized as an input method for the digital information. In this article, we review the recent progress of this scheme mainly based on our own achievements. We particularly focus on several fundamental issues, including the ME control of the AFM domain state, which is detectable through the perpendicular exchange bias polarity. The progress made in understanding the switching mechanism, interpretation of the switching energy, switching dynamics, and finally, the future prospects are included.

Multiferroic heterostructures for spintronics

For next-generation technology, magnetic systems are of interest due to the natural ability to store information and, through spin transport, propagate this information for logic functions. Controlling the magnetization state through currents has proven energy inefficient. Multiferroic thin-film heterostructures, combining ferroelectric and ferromagnetic orders, hold promise for energy efficient electronics. The electric field control of magnetic order is expected to reduce energy dissipation by 2–3 orders of magnitude relative to the current state-of-the-art. The coupling between electrical and magnetic orders in multiferroic and magnetoelectric thin-film heterostructures relies on interfacial coupling though magnetic exchange or mechanical strain and the correlation between domains in adjacent functional ferroic layers. We review the recent developments in electrical control of magnetism through artificial magnetoelectric heterostructures, domain imprint, emergent physics and device paradigms for magnetoelectric logic, neuromorphic devices, and hybrid magnetoelectric/spin-current-based applications. Finally, we conclude with a discussion of experiments that probe the crucial dynamics of the magnetoelectric switching and optical tuning of ferroelectric states towards all-optical control of magnetoelectric switching events.

Experimental Investigation of the Magnetoelectric Effect in NdFeB-Driven A-Line Shape Terfenol-D/PZT-5A Structures

In this paper, the magnetoelectric (ME) effect is investigated in two kinds of A-line shape Terfenol-D/PZT-5A structures by changing the position of the NdFeB permanent magnet. The experimental results show that both ME composite structures had multiple resonance peaks. For the ME structure with acrylonitrile-butadiene-styrene (ABS) trestles, the resonance peak was different for different places of the NdFeB permanent magnet. Besides, the maximum of the ME coefficient was 4.142 V/A at 32.2 kHz when the NdFeB permanent magnet was on top of the Terfenol-D layer. Compared with the ME coefficient with a DC magnetic field, the ME coefficient with NdFeB magnets still maintained high values in the frequency domain of 65~87 kHz in the ME structure with mica trestles. Through Fourier transform analysis of the transient signal, it is found that the phenomenon of multiple frequencies appeared at low field frequency but not at high field frequency. Moreover, the output ME voltages under different AC magnetic fields are shown. Changing the amplitude of AC magnetic field, the magnitude of the output voltage changed, but the resonant frequency did not change. Finally, a finite element analysis was performed to evaluate the resonant frequency and the magnetic flux distribution characteristics of the ME structure. The simulation results show that the magnetic field distribution on the surface of Terfenol-D is non-uniform due to the uneven distribution of the magnetic field around NdFeB. The resonant frequencies of ME structures can be changed by changing the location of the external permanent magnet. This study may provide a useful basis for the improvement of the ME coefficient and for the optimal design of ME devices.

Probing Ferroic States in Oxide Thin Films Using Optical Second Harmonic Generation

Forthcoming low-energy consumption oxide electronics rely on the deterministic control of ferroelectric and multiferroic domain states at the nanoscale. In this review, we address the recent progress in the field of investigation of ferroic order in thin films and heterostructures, with a focus on non-invasive optical second harmonic generation (SHG). For more than 50 years, SHG has served as an established technique for probing ferroic order in bulk materials. Here, we will survey the specific new aspects introduced to SHG investigation of ferroelectrics and multiferroics by working with thin film structures. We show how SHG can probe complex ferroic domain patterns non-invasively and even if the lateral domain size is below the optical resolution limit or buried beneath an otherwise impenetrable cap layer. We emphasize the potential of SHG to distinguish contributions from individual (multi-) ferroic films or interfaces buried in a device or multilayer architecture. Special attention is given to monitoring switching events in buried ferroic domain- and domain-wall distributions by SHG, thus opening new avenues towards the determination of the domain dynamics. Another aspect studied by SHG is the role of strain. We will finally show that by integrating SHG into the ongoing thin film deposition process, we can monitor the emergence of ferroic order and properties in situ, while they emerge during growth. Our review closes with an outlook, emphasizing the present underrepresentation of ferroic switching dynamics in the study of ferroic oxide heterostructures.