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Jin Y, Sun J, Zhang L, Yang J, Wu Y, You B, Liu X, Leng K, Liu S. Controllable Oxidation of ZrS 2 to Prepare High-κ, Single-Crystal m-ZrO 2 for 2D Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2212079. [PMID: 36815429 DOI: 10.1002/adma.202212079] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/24/2022] [Revised: 01/27/2023] [Indexed: 05/05/2023]
Abstract
High-κ materials that exhibit large permittivity and band gaps are needed as gate dielectrics to enhance capacitance and prevent leakage current in downsized technology nodes. Among these, monoclinic ZrO2 (m-ZrO2 ) shows good potential because of its inertness and high-κ with respect to SiO2 , but a method to produce ultrathin single crystal is lacking. Here, the controllable preparation of ultrathin m-ZrO2 single crystals via the in situ thermal oxidation of ZrS2 is achieved. As-grown m-ZrO2 presents an equivalent oxide thickness of ≈0.29 nm, a high dielectric constant of ≈19, and a breakdown voltage (EBD ) of ≈7.22 MV cm-1 . MoS2 field effect transistor (FET) by using m-ZrO2 as a dielectric layer shows comparable mobility to that using SiO2 dielectric. The ultraclean interface of m-ZrO2 /MoS2 and high crystalline quality of m-ZrO2 lead to negligible hysteresis in transfer curves. Single crystal m-ZrO2 dielectric shows potential application in digital complementary metal oxidesemiconductor (CMOS) logic FET.
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Affiliation(s)
- Yuanyuan Jin
- State Key Laboratory of Chem/Bio-Sensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 100872, P. R. China
| | - Jian Sun
- School of Physics and Electronics, Central South University, Changsha, 410083, P. R. China
| | - Ling Zhang
- State Key Laboratory of Chem/Bio-Sensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Junqiang Yang
- School of Physics and Electronics, Central South University, Changsha, 410083, P. R. China
| | - Yangwu Wu
- State Key Laboratory of Chem/Bio-Sensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Bingying You
- Department of Information Technology, Ghent University, Technologiepark-Zwijnaarde 15, Gent, 9052, Belgium
| | - Xiao Liu
- State Key Laboratory of Chem/Bio-Sensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Kai Leng
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 100872, P. R. China
| | - Song Liu
- State Key Laboratory of Chem/Bio-Sensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
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Li W, Nagashima K, Hosomi T, Liu J, Takahashi T, Zhang G, Tanaka W, Kanai M, Yanagida T. Core-Shell Metal Oxide Nanowire Array to Analyze Adsorption Behaviors of Volatile Molecules. CHEM LETT 2022. [DOI: 10.1246/cl.220010] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Affiliation(s)
- Wenjun Li
- Department of Applied Chemistry, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
- Department of Molecular and Material Sciences, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, 6-1 Kasuga-Koen, Kasuga, Fukuoka, 816-8580, Japan
| | - Kazuki Nagashima
- Department of Applied Chemistry, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
- PRESTO, Japan Science and Technology Agency, 4-1-8, Honcho, Kawaguchi-shi, Saitama 332-0012 Japan
| | - Takuro Hosomi
- Department of Applied Chemistry, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
- PRESTO, Japan Science and Technology Agency, 4-1-8, Honcho, Kawaguchi-shi, Saitama 332-0012 Japan
| | - Jiangyang Liu
- Department of Applied Chemistry, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
| | - Tsunaki Takahashi
- Department of Applied Chemistry, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
- PRESTO, Japan Science and Technology Agency, 4-1-8, Honcho, Kawaguchi-shi, Saitama 332-0012 Japan
| | - Guozhu Zhang
- Department of Applied Chemistry, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
| | - Wataru Tanaka
- Department of Applied Chemistry, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
| | - Masaki Kanai
- Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-Koen, Kasuga, Fukuoka 816-8580, Japan
| | - Takeshi Yanagida
- Department of Applied Chemistry, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
- Department of Molecular and Material Sciences, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, 6-1 Kasuga-Koen, Kasuga, Fukuoka, 816-8580, Japan
- Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-Koen, Kasuga, Fukuoka 816-8580, Japan
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Ng SM, Wang H, Liu Y, Wong HF, Yau HM, Suen CH, Wu ZH, Leung CW, Dai JY. High-Temperature Anomalous Hall Effect in a Transition Metal Dichalcogenide Ferromagnetic Insulator Heterostructure. ACS NANO 2020; 14:7077-7084. [PMID: 32407078 DOI: 10.1021/acsnano.0c01815] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Integration of transition metal dichalcogenides (TMDs) on ferromagnetic materials (FM) may yield fascinating physics and promise for electronics and spintronic applications. In this work, high-temperature anomalous Hall effect (AHE) in the TMD ZrTe2 thin film using a heterostructure approach by depositing it on a ferrimagnetic insulator YIG (Y3Fe5O12, yttrium iron garnet) is demonstrated. In this heterostructure, significant anomalous Hall effect can be observed at temperatures up to at least 400 K, which is a record high temperature for the observation of AHE in TMDs, and the large RAHE is more than 1 order of magnitude larger than those previously reported values in topological insulators or TMD-based heterostructures. A complicated interface with additional ZrO2 and amorphous YIG layers is actually observed between ZrTe2 and YIG. The magnetization of interfacial reaction-induced ZrO2 and YIG is believed to play a crucial role in the induced high-temperature AHE in the ZrTe2. These results present a promising system for the spintronic device applications, and it may shed light on the designing approach to introduce magnetism to TMDs at room temperature.
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Affiliation(s)
- Sheung Mei Ng
- Department of Applied Physics, The Hong Kong Polytechnic University, 999077, Hong Kong, P.R. China
| | - Huichao Wang
- Department of Applied Physics, The Hong Kong Polytechnic University, 999077, Hong Kong, P.R. China
- School of Physics, Sun Yat-Sen University, Guangzhou 510275, China
| | - Yukuai Liu
- Department of Applied Physics, The Hong Kong Polytechnic University, 999077, Hong Kong, P.R. China
| | - Hon Fai Wong
- Department of Applied Physics, The Hong Kong Polytechnic University, 999077, Hong Kong, P.R. China
| | - Hei Man Yau
- Department of Applied Physics, The Hong Kong Polytechnic University, 999077, Hong Kong, P.R. China
| | - Chun Hung Suen
- Department of Applied Physics, The Hong Kong Polytechnic University, 999077, Hong Kong, P.R. China
| | - Ze Han Wu
- Department of Applied Physics, The Hong Kong Polytechnic University, 999077, Hong Kong, P.R. China
| | - Chi Wah Leung
- Department of Applied Physics, The Hong Kong Polytechnic University, 999077, Hong Kong, P.R. China
| | - Ji-Yan Dai
- Department of Applied Physics, The Hong Kong Polytechnic University, 999077, Hong Kong, P.R. China
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Structural, Optical and Electrical Properties of HfO 2 Thin Films Deposited at Low-Temperature Using Plasma-Enhanced Atomic Layer Deposition. MATERIALS 2020; 13:ma13092008. [PMID: 32344793 PMCID: PMC7254199 DOI: 10.3390/ma13092008] [Citation(s) in RCA: 22] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/13/2020] [Revised: 04/17/2020] [Accepted: 04/23/2020] [Indexed: 11/24/2022]
Abstract
HfO2 was deposited at 80–250 °C by plasma-enhanced atomic layer deposition (PEALD), and properties were compared with those obtained by using thermal atomic layer deposition (thermal ALD). The ALD window, i.e., the region where the growth per cycle (GPC) is constant, shifted from high temperatures (150–200 °C) to lower temperatures (80–150 °C) in PEALD. HfO2 deposited at 80 °C by PEALD showed higher density (8.1 g/cm3) than those deposited by thermal ALD (5.3 g/cm3) and a smooth surface (RMS Roughness: 0.2 nm). HfO2 deposited at a low temperature by PEALD showed decreased contaminants compared to thermal ALD deposited HfO2. Values of refractive indices and optical band gap of HfO2 deposited at 80 °C by PEALD (1.9, 5.6 eV) were higher than those obtained by using thermal ALD (1.7, 5.1 eV). Transparency of HfO2 deposited at 80 °C by PEALD on polyethylene terephthalate (PET) was high (> 84%). PET deposited above 80 °C was unable to withstand heat and showed deformation. HfO2 deposited at 80 °C by PEALD showed decreased leakage current from 1.4 × 10−2 to 2.5 × 10−5 A/cm2 and increased capacitance of approximately 21% compared to HfO2 using thermal ALD. Consequently, HfO2 deposited at a low temperature by PEALD showed improved properties compared to HfO2 deposited by thermal ALD.
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Kondaiah P, Jagadeesh Chandra S, Fortunato E, Chel Jong C, Mohan Rao G, Koti Reddy DR, Uthanna S. Substrate temperature influenced ZrO
2
films for MOS devices. SURF INTERFACE ANAL 2020. [DOI: 10.1002/sia.6775] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Paruchuri Kondaiah
- Department of Instrumentation and Applied PhysicsIndian Institute of Science Bangalore India
| | - S.V. Jagadeesh Chandra
- Department of Electronics and Communication EngineeringVignan's Institute of Information Technology (A) Visakhapatnam Andhra Pradesh India
- CENIMAT/I3N, Materials Science Department, Faculty of Science and TechnologyNew University of Lisbon Caparica Portugal
| | - Elvira Fortunato
- Departamento de Ciência dos Materiais, CENIMAT/I3N, Faculdade de Ciências eTecnologia (FCT)Universidade Nova de Lisboa Caparica Portugal
| | - Choi Chel Jong
- School of Semiconductor and Chemical Engineering, Semiconductor Physics Research CenterChonbuk National University Jeonju South Korea
| | - G. Mohan Rao
- Department of Instrumentation and Applied PhysicsIndian Institute of Science Bangalore India
| | - D.V. Rama Koti Reddy
- Department of Instrument TechnologyAndhra University Visakhapatnam Andhra Pradesh India
| | - S. Uthanna
- Department of PhysicsSri Venkateswara University Tirupati India
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Oviroh PO, Akbarzadeh R, Pan D, Coetzee RAM, Jen TC. New development of atomic layer deposition: processes, methods and applications. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2019; 20:465-496. [PMID: 31164953 PMCID: PMC6534251 DOI: 10.1080/14686996.2019.1599694] [Citation(s) in RCA: 95] [Impact Index Per Article: 19.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/09/2019] [Revised: 03/21/2019] [Accepted: 03/22/2019] [Indexed: 05/11/2023]
Abstract
Atomic layer deposition (ALD) is an ultra-thin film deposition technique that has found many applications owing to its distinct abilities. They include uniform deposition of conformal films with controllable thickness, even on complex three-dimensional surfaces, and can improve the efficiency of electronic devices. This technology has attracted significant interest both for fundamental understanding how the new functional materials can be synthesized by ALD and for numerous practical applications, particularly in advanced nanopatterning for microelectronics, energy storage systems, desalinations, catalysis and medical fields. This review introduces the progress made in ALD, both for computational and experimental methodologies, and provides an outlook of this emerging technology in comparison with other film deposition methods. It discusses experimental approaches and factors that affect the deposition and presents simulation methods, such as molecular dynamics and computational fluid dynamics, which help determine and predict effective ways to optimize ALD processes, hence enabling the reduction in cost, energy waste and adverse environmental impacts. Specific examples are chosen to illustrate the progress in ALD processes and applications that showed a considerable impact on other technologies.
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Affiliation(s)
- Peter Ozaveshe Oviroh
- Mechanical Engineering Science Department, Faculty of Engineering and the Built Environment, University of Johannesburg, Johannesburg, South Africa
| | - Rokhsareh Akbarzadeh
- Mechanical Engineering Science Department, Faculty of Engineering and the Built Environment, University of Johannesburg, Johannesburg, South Africa
| | - Dongqing Pan
- Department of Engineering Technology, University of North Alabama, Florence, AL, USA
| | - Rigardt Alfred Maarten Coetzee
- Mechanical Engineering Science Department, Faculty of Engineering and the Built Environment, University of Johannesburg, Johannesburg, South Africa
| | - Tien-Chien Jen
- Mechanical Engineering Science Department, Faculty of Engineering and the Built Environment, University of Johannesburg, Johannesburg, South Africa
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