1
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Zhang L, Qin B, Sun C, Ji Y, Zhao D. Effect of Synthesis Factors on Microstructure and Thermoelectric Properties of FeTe 2 Prepared by Solid-State Reaction. MATERIALS (BASEL, SWITZERLAND) 2023; 16:7170. [PMID: 38005101 PMCID: PMC10672603 DOI: 10.3390/ma16227170] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/20/2023] [Revised: 11/11/2023] [Accepted: 11/13/2023] [Indexed: 11/26/2023]
Abstract
The alloying compound FeTe2 is a semi-metallic material with low thermal conductivity and has the potential to become a thermoelectric material. Single-phase FeTe2 compounds are synthesized using a two-step sintering method, and the effects of the optimal sintering temperature, holding temperature, and holding time on the thermoelectric properties of the alloy compound FeTe2 are investigated. The phase composition, microstructure, and electrical transport properties of the FeTe2 compound are systematically analyzed. The results show that single-phase FeTe2 compounds can be synthesized within the range of a sintering temperature of 823 K and holding time of 10~60 min, and the thermoelectric properties gradually deteriorate with the prolongation of the holding time. Microstructural analysis reveals that the sample of the alloy compound FeTe2 exhibits a three-dimensional network structure with numerous fine pores, which can impede thermal conduction and thus reduce the overall thermal conductivity of the material. When the sintering temperature is 823 K and the holding time is 30 min, the sample achieves the minimum electrical resistivity of 6.9 mΩ·cm. The maximum Seebeck coefficient of 65.48 μV/K is obtained when the sample is held at 823 K for 10 min; and under this condition, the maximum power factor of 59.54 μW/(m·K2) is achieved. In the whole test temperature range of 323~573 K, when the test temperature of the sample is 375 K, the minimum thermal conductivity is 1.46 W/(m·K), and the maximum ZT is 1.57 × 10-2.
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Affiliation(s)
- Lang Zhang
- College of Physical Science and Technology, Dalian University, Dalian 116622, China;
- School of Chemistry and Materials Engineering, Liupanshui Normal University, Liupanshui 553004, China; (Y.J.); (D.Z.)
| | - Bingke Qin
- School of Chemistry and Materials Engineering, Liupanshui Normal University, Liupanshui 553004, China; (Y.J.); (D.Z.)
| | - Cheng Sun
- College of Physical Science and Technology, Dalian University, Dalian 116622, China;
| | - Yonghua Ji
- School of Chemistry and Materials Engineering, Liupanshui Normal University, Liupanshui 553004, China; (Y.J.); (D.Z.)
| | - Dan Zhao
- School of Chemistry and Materials Engineering, Liupanshui Normal University, Liupanshui 553004, China; (Y.J.); (D.Z.)
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2
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Al-Fartoos MMR, Roy A, Mallick TK, Tahir AA. Advancing Thermoelectric Materials: A Comprehensive Review Exploring the Significance of One-Dimensional Nano Structuring. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2011. [PMID: 37446526 DOI: 10.3390/nano13132011] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/08/2023] [Revised: 06/29/2023] [Accepted: 07/02/2023] [Indexed: 07/15/2023]
Abstract
Amidst the global challenges posed by pollution, escalating energy expenses, and the imminent threat of global warming, the pursuit of sustainable energy solutions has become increasingly imperative. Thermoelectricity, a promising form of green energy, can harness waste heat and directly convert it into electricity. This technology has captivated attention for centuries due to its environmentally friendly characteristics, mechanical stability, versatility in size and substrate, and absence of moving components. Its applications span diverse domains, encompassing heat recovery, cooling, sensing, and operating at low and high temperatures. However, developing thermoelectric materials with high-performance efficiency faces obstacles such as high cost, toxicity, and reliance on rare-earth elements. To address these challenges, this comprehensive review encompasses pivotal aspects of thermoelectricity, including its historical context, fundamental operating principles, cutting-edge materials, and innovative strategies. In particular, the potential of one-dimensional nanostructuring is explored as a promising avenue for advancing thermoelectric technology. The concept of one-dimensional nanostructuring is extensively examined, encompassing various configurations and their impact on the thermoelectric properties of materials. The profound influence of one-dimensional nanostructuring on thermoelectric parameters is also thoroughly discussed. The review also provides a comprehensive overview of large-scale synthesis methods for one-dimensional thermoelectric materials, delving into the measurement of thermoelectric properties specific to such materials. Finally, the review concludes by outlining prospects and identifying potential directions for further advancements in the field.
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Affiliation(s)
- Mustafa Majid Rashak Al-Fartoos
- Solar Energy Research Group, Environment and Sustainability Institute, University of Exeter, Penryn Campus, Cornwall TR10 9FE, UK
| | - Anurag Roy
- Solar Energy Research Group, Environment and Sustainability Institute, University of Exeter, Penryn Campus, Cornwall TR10 9FE, UK
| | - Tapas K Mallick
- Solar Energy Research Group, Environment and Sustainability Institute, University of Exeter, Penryn Campus, Cornwall TR10 9FE, UK
| | - Asif Ali Tahir
- Solar Energy Research Group, Environment and Sustainability Institute, University of Exeter, Penryn Campus, Cornwall TR10 9FE, UK
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3
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Shivhare V, Khandy SA, Gupta DC. Probing the structural, mechanical, phonon, thermal, and transport properties of magnetic halide perovskites XTiBr 3 (X = Rb, Cs) through ab-initio results. Sci Rep 2023; 13:9115. [PMID: 37277432 DOI: 10.1038/s41598-023-34047-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/11/2023] [Accepted: 04/23/2023] [Indexed: 06/07/2023] Open
Abstract
Herein, we have first reported the intrinsic properties, including structural, mechanical, electronic, magnetic, thermal, and transport properties of XTiBr3 (X = Rb, Cs) halide perovskites within the simulation scheme of density functional theory as integrated into Wien2k. First and foremost, the structural stability in terms of their ground state energies has been keenly evaluated from their corresponding structural optimizations, which advocate that XTiBr3 (X = Rb, Cs) has a stable ferromagnetic rather than the competing non-magnetic phase. Later on, the electronic properties have been computed within the mix of two applied potential schemes like Generalized Gradient Approximation (GGA) along with Trans-Bhala modified Becke Johnson (TB-mBJ), which thoroughly addresses the half-metallic behaviour with spin-up as metallic and in contrast to opposite spin-down channel signatures the semiconducting behaviour. Furthermore, the spin-splitting seen from their corresponding spin-polarised band structures offers a net magnetism of 2 µB which lends their opportunities to unlock the application branch of spintronics. In addition, these alloys have been characterised to show their mechanical stability describing the ductile feature. Moreover, phonon dispersions decisively certify the dynamical stability within the density functional perturbation theory (DFPT) context. Finally, the transport and thermal properties predicted within their specified packages have also been forwarded in this report.
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Affiliation(s)
- Vishal Shivhare
- Condensed Matter Theory Group, School of Studies in Physics, Jiwaji University, Gwalior, 474011, India
| | - Saveer Ahmad Khandy
- Condensed Matter Theory Group, School of Studies in Physics, Jiwaji University, Gwalior, 474011, India
| | - Dinesh C Gupta
- Condensed Matter Theory Group, School of Studies in Physics, Jiwaji University, Gwalior, 474011, India.
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4
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Zhang Y, Deng L, Cho Y, Lee J, Shibayama N, Zhang Z, Wang C, Hu Z, Wang J, Wu F, Chen L, Du Y, Ren F, Yang C, Gao P. Revealing the Enhanced Thermoelectric Properties of Controllably Doped Donor-Acceptor Copolymer: The Impact of Regioregularity. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206233. [PMID: 36592416 DOI: 10.1002/smll.202206233] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2022] [Revised: 12/06/2022] [Indexed: 06/17/2023]
Abstract
Albeit considerable attention to the fast-developing organic thermoelectric (OTE) materials due to their flexibility and non-toxic features, it is still challenging to design an OTE polymer with superior thermoelectric properties. In this work, two "isomorphic" donor-acceptor (D-A) conjugated polymers are studied as the semiconductor in OTE devices, revealing for the first time the internal mechanism of regioregularity on thermoelectric performances in D-A type polymers. A higher molecular structure regularity can lead to higher crystalline order and mobility, higher doping efficiency, order of energy state, and thermoelectric (TE) performance. As a result, the regioregular P2F exhibits a maximum power factor (PF) of up to 113.27 µW m-1 K-2 , more than three times that of the regiorandom PRF (35.35 µW m-1 K-2 ). However, the regular backbone also implies lower miscibility with a dopant, negatively affecting TE performance. Therefore, the trade-off between doping efficiency and miscibility plays a vital role in OTE materials, and this work sheds light on the molecular design strategy of OTE polymers with state-of-the-art performances.
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Affiliation(s)
- Yingyao Zhang
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
- Laboratory of Advanced Functional Materials, Xiamen Institute of Rare Earth Materials, Haixi Institute, Chinese Academy of Sciences, Xiamen, 361021, China
| | - Longhui Deng
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
- Laboratory of Advanced Functional Materials, Xiamen Institute of Rare Earth Materials, Haixi Institute, Chinese Academy of Sciences, Xiamen, 361021, China
| | - Yongjoon Cho
- School of Energy and Chemical Engineering, Perovtronics Research Center, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), 50 UNIST-gil, Ulju-gun, 44919, Ulsan, South Korea
- Department of Chemistry and Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
| | - Jungho Lee
- School of Energy and Chemical Engineering, Perovtronics Research Center, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), 50 UNIST-gil, Ulju-gun, 44919, Ulsan, South Korea
- Samsung Electro-Mechanics Co, Ltd., 150, Maeyeong-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16674, Republic of Korea
| | - Naoyuki Shibayama
- Naoyuki Shibayama, Department of Engineering, Toin University of Yokohama, 1614 Kurogane-cho, Aoba, Yokohama, Kanagawa, 225-8503, Japan
| | - Zilong Zhang
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
- Laboratory of Advanced Functional Materials, Xiamen Institute of Rare Earth Materials, Haixi Institute, Chinese Academy of Sciences, Xiamen, 361021, China
| | - Can Wang
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
- Laboratory of Advanced Functional Materials, Xiamen Institute of Rare Earth Materials, Haixi Institute, Chinese Academy of Sciences, Xiamen, 361021, China
| | - Zhenyu Hu
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
- Laboratory of Advanced Functional Materials, Xiamen Institute of Rare Earth Materials, Haixi Institute, Chinese Academy of Sciences, Xiamen, 361021, China
| | - Jing Wang
- College of Chemistry, Nanchang University, 999 Xuefu Avenue, 330031, Nanchang, China
| | - Feiyan Wu
- College of Chemistry, Nanchang University, 999 Xuefu Avenue, 330031, Nanchang, China
| | - Lie Chen
- College of Chemistry, Nanchang University, 999 Xuefu Avenue, 330031, Nanchang, China
| | - Yitian Du
- Institute of Materials Physical Chemistry, Huaqiao University, Xiamen, 361021, China
| | - Fangbin Ren
- Xiamen University of Technology, Xiamen, 361024, China
| | - Changduk Yang
- School of Energy and Chemical Engineering, Perovtronics Research Center, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), 50 UNIST-gil, Ulju-gun, 44919, Ulsan, South Korea
- Graduate School of Carbon Neutrality, Ulsan National Institute of Science and Technology (UNIST), 50 UNIST-gil, Ulju-gun, 44919, Ulsan, South Korea
| | - Peng Gao
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
- Laboratory of Advanced Functional Materials, Xiamen Institute of Rare Earth Materials, Haixi Institute, Chinese Academy of Sciences, Xiamen, 361021, China
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5
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Li J, Wang Y, Jiang X, Tian Z, Kang H, Chen Z, Guo E, Cao Z, Wang T. Emerging homogeneous superlattices in CaTiO 3 bulk thermoelectric materials. MATERIALS HORIZONS 2023; 10:454-465. [PMID: 36606474 DOI: 10.1039/d2mh01332k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The thermal conductivity of superlattices is strongly reduced as compared to that of the parent materials due to phonon-scattering and thermal boundary resistances at the superlattice period interfaces. Herein, homogenous superlattices consisting of homogenous structural CeδCa1-δTiO3 and CaTi1-δCeδO3 alternate layers were obtained through a variable-valence Ce doping, providing multi-quantum well interfaces between the alternate layers due to Ce-substitution at Ca and Ti sites, respectively. This material comprising these homogenous superlattices displayed a significantly reduced lattice thermal conductivity of 1.82 W m-1 K-1 and a record high zT value of 0.405 at 1031 K in CaTiO3-based thermoelectric materials. This strategy of synthesizing homogeneous superlattices provides a cost advantage over heterogeneous superlattices prepared by the molecular beam epitaxy method and paves a route for preparing bulk superlattices with unique thermoelectric properties rooting in the quantum domain limiting effect.
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Affiliation(s)
- Jianbo Li
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian, 116024, China.
| | - Yanxia Wang
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China
| | - Xue Jiang
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China
| | - Zhen Tian
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian, 116024, China.
| | - Huijun Kang
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian, 116024, China.
- Ningbo Institute of Dalian University of Technology, Ningbo 315000, China
| | - Zongning Chen
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian, 116024, China.
- Ningbo Institute of Dalian University of Technology, Ningbo 315000, China
| | - Enyu Guo
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian, 116024, China.
- Ningbo Institute of Dalian University of Technology, Ningbo 315000, China
| | - Zhiqiang Cao
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian, 116024, China.
- Ningbo Institute of Dalian University of Technology, Ningbo 315000, China
| | - Tongmin Wang
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian, 116024, China.
- Ningbo Institute of Dalian University of Technology, Ningbo 315000, China
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6
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Xie H, Zhang Y, Gao P. Thermoelectric-Powered Sensors for Internet of Things. MICROMACHINES 2022; 14:31. [PMID: 36677092 PMCID: PMC9861844 DOI: 10.3390/mi14010031] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/23/2022] [Revised: 12/09/2022] [Accepted: 12/19/2022] [Indexed: 06/17/2023]
Abstract
The Internet of Things (IoT) combines various sensors and the internet to form an expanded network, realizing the interconnection between human beings and machines anytime and anywhere. Nevertheless, the problem of energy supply limits the large-scale implementation of the IoT. Fortunately, thermoelectric generators (TEGs), which can directly convert thermal gradients into electricity, have attracted extensive attention in the IoT field due to their unique benefits, such as small sizes, long maintenance cycles, high stability, and no noise. Therefore, it is vital to integrate the significantly advanced research on TEGs into IoT. In this review, we first outline the basic principle of the thermoelectricity effect and summarize the common preparation methods for thermoelectric functional parts in TEGs. Then, we elaborate on the application of TEG-powered sensors in the human body, including wearable and implantable medical electronic devices. This is followed by a discussion on the application of scene sensors for IoTs, for example, building energy management and airliners. Finally, we provide a further outlook on the current challenges and opportunities.
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Affiliation(s)
- Huadeng Xie
- College of Chemistry, Fuzhou University, Fuzhou 350108, China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
- Xiamen Key Laboratory of Rare Earth Photoelectric Functional Materials, Xiamen Institute of Rare Earth Materials, Chinese Academy of Sciences, Xiamen 361021, China
| | - Yingyao Zhang
- College of Chemistry, Fuzhou University, Fuzhou 350108, China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
- Xiamen Key Laboratory of Rare Earth Photoelectric Functional Materials, Xiamen Institute of Rare Earth Materials, Chinese Academy of Sciences, Xiamen 361021, China
| | - Peng Gao
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
- Xiamen Key Laboratory of Rare Earth Photoelectric Functional Materials, Xiamen Institute of Rare Earth Materials, Chinese Academy of Sciences, Xiamen 361021, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350002, China
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7
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Annie Abraham J, Behera D, Kumari K, Srivastava A, Sharma R, Kumar Mukherjee S. A comprehensive DFT analysis on structural, electronic, optical, thermoelectric, SLME properties of new Double Perovskite Oxide Pb2ScBiO6. Chem Phys Lett 2022. [DOI: 10.1016/j.cplett.2022.139987] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
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8
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Sebastia-Luna P, Pokharel U, Huisman BAH, Koster LJA, Palazon F, Bolink HJ. Vacuum-Deposited Cesium Tin Iodide Thin Films with Tunable Thermoelectric Properties. ACS APPLIED ENERGY MATERIALS 2022; 5:10216-10223. [PMID: 36034760 PMCID: PMC9400028 DOI: 10.1021/acsaem.2c01936] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/20/2022] [Accepted: 07/18/2022] [Indexed: 06/15/2023]
Abstract
Most current thermoelectric materials have important drawbacks, such as toxicity, scarceness, and peak operating temperatures above 300 °C. Herein, we report the thermoelectric properties of different crystalline phases of Sn-based perovskite thin films. The 2D phase, Cs2SnI4, is obtained through vacuum thermal deposition and easily converted into the black β phase of CsSnI3 (B-β CsSnI3) by annealing at 150 °C. B-β CsSnI3 is a p-type semiconductor with a figure of merit (ZT) ranging from 0.021 to 0.033 for temperatures below 100 °C, which makes it a promising candidate to power small electronic devices such as wearable sensors which may be interconnected in the so-called Internet of Things. The B-β phase is stable in nitrogen, whereas it spontaneously oxidizes to Cs2SnI6 upon exposure to air. Cs2SnI6 shows a negative Seebeck coefficient and an ultralow thermal conductivity. However, the ZT values are 1 order of magnitude lower than for B-β CsSnI3 due to a considerably lower electrical conductivity.
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Affiliation(s)
- Paz Sebastia-Luna
- Instituto
de Ciencia Molecular, ICMol, Universidad
de Valencia, 46980 Paterna, Spain
| | - Unnati Pokharel
- Zernike
Institute for Advanced Materials, University
of Groningen, 9747 AG Groningen, The Netherlands
| | - Bas A. H. Huisman
- Instituto
de Ciencia Molecular, ICMol, Universidad
de Valencia, 46980 Paterna, Spain
| | - L. Jan Anton Koster
- Zernike
Institute for Advanced Materials, University
of Groningen, 9747 AG Groningen, The Netherlands
| | - Francisco Palazon
- Instituto
de Ciencia Molecular, ICMol, Universidad
de Valencia, 46980 Paterna, Spain
- Departamento
de Ingeniería Química y Ambiental, Universidad Politécnica de Cartagena, 30202 Cartagena, Spain
| | - Henk J. Bolink
- Instituto
de Ciencia Molecular, ICMol, Universidad
de Valencia, 46980 Paterna, Spain
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9
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Joshi RK, Bhandari SR, Ghimire MP. Structural stability, electronic, optical, and thermoelectric properties of layered perovskite Bi 2LaO 4I. RSC Adv 2022; 12:24156-24162. [PMID: 36128546 PMCID: PMC9403660 DOI: 10.1039/d2ra03859e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/23/2022] [Accepted: 07/22/2022] [Indexed: 11/21/2022] Open
Abstract
Layered perovskites are an interesting class of materials due to their possible applications in microelectronics and optoelectronics. Here, by means of density functional theory calculations, we investigated the structural, elastic, electronic, optical, and thermoelectric properties of the layered perovskite Bi2LaO4I within the parametrization of the standard generalized gradient approximation (GGA). The transport coefficients were evaluated by adopting Boltzmann semi-classical theory and a collision time approach. The calculated elastic constants were found to satisfy the Born criteria, indicating that Bi2LaO4I is mechanically stable. Taking into account spin-orbit coupling (SOC), the material was found to be a non-magnetic insulator, with an energy bandgap of 0.82 eV (within GGA+SOC), and 1.85 eV (within GGA+mBJ+SOC). The optical-property calculations showed this material to be optically active in the visible and ultraviolet regions, and that it may be a candidate for use in optoelectronic devices. Furthermore, this material is predicted to be a potential candidate for use in thermoelectric devices due to its large value of power factor, ranging from 2811 to 7326 μW m-1 K-2, corresponding to a temperature range of 300 K to 800 K.
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Affiliation(s)
- Radha K Joshi
- Central Department of Physics, Tribhuvan University Kathmandu Nepal
- Condensed Matter Physics Research Center (CMPRC) Butwal Rupandehi Nepal
| | - Shalika R Bhandari
- Central Department of Physics, Tribhuvan University Kathmandu Nepal
- Condensed Matter Physics Research Center (CMPRC) Butwal Rupandehi Nepal
- Leibniz IFW Dresden Helmholtzstr. 20 01069 Dresden Germany
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10
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Berry T, Fry-Petit AM, Sinha M, Zhang Q, Auffermann G, McQueen TM, Rudin SP, Phelan WA. The Role of Phonons and Oxygen Vacancies in Non-Cubic SrVO 3. Inorg Chem 2022; 61:3007-3017. [PMID: 35143187 DOI: 10.1021/acs.inorgchem.1c03201] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Combining neutron diffraction with pair distribution function analysis, we have uncovered hidden reduced symmetry in the correlated metallic d1 perovskite, SrVO3. Specifically, we show that both the local and global structures are better described using a GdFeO3 distorted (orthorhombic) model as opposed to the ideal cubic ABO3 perovskite type. Recent reports of imaginary phonon frequencies in the density functional theory (DFT)-calculated phonon dispersion for cubic SrVO3 suggest a possible origin of this observed non-cubicity. Namely, the imaginary frequencies computed could indicate that the cubic crystal structure is unstable at T = 0 K. However, our DFT calculations provide compelling evidence that point defects in the form of oxygen vacancies, and not an observable symmetry breaking associated with calculated imaginary frequencies, primarily result in the observed non-cubicity of SrVO3. These experimental and computational results are broadly impactful because they reach into the thin-film and theoretical communities who have shown that SrVO3 is a technologically viable transparent conducting oxide material and have used SrVO3 to develop theoretical methods, respectively.
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Affiliation(s)
- Tanya Berry
- Department of Chemistry, The Johns Hopkins University, Baltimore, Maryland 21218, United States.,Institute for Quantum Matter and Department of Physics and Astronomy, The Johns Hopkins University, Baltimore, Maryland 21218, United States.,Department of Materials Science and Engineering, The Johns Hopkins University, Baltimore, Maryland 21218, United States
| | - Allyson Marie Fry-Petit
- Department of Chemistry and Biochemistry, California State University, Fullerton, California 92831, United States
| | - Mekhola Sinha
- Department of Chemistry, The Johns Hopkins University, Baltimore, Maryland 21218, United States.,Institute for Quantum Matter and Department of Physics and Astronomy, The Johns Hopkins University, Baltimore, Maryland 21218, United States.,Department of Materials Science and Engineering, The Johns Hopkins University, Baltimore, Maryland 21218, United States
| | - Qiang Zhang
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Gudrun Auffermann
- Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Strasse 40, Dresden 01187, Germany
| | - Tyrel M McQueen
- Department of Chemistry, The Johns Hopkins University, Baltimore, Maryland 21218, United States.,Institute for Quantum Matter and Department of Physics and Astronomy, The Johns Hopkins University, Baltimore, Maryland 21218, United States.,Department of Materials Science and Engineering, The Johns Hopkins University, Baltimore, Maryland 21218, United States
| | - Sven P Rudin
- Los Alamos National Laboratory, Mail Stop B221, Los Alamos, New Mexico 87545, United States
| | - W Adam Phelan
- Department of Chemistry, The Johns Hopkins University, Baltimore, Maryland 21218, United States.,Institute for Quantum Matter and Department of Physics and Astronomy, The Johns Hopkins University, Baltimore, Maryland 21218, United States.,Department of Materials Science and Engineering, The Johns Hopkins University, Baltimore, Maryland 21218, United States.,Los Alamos National Laboratory, Mail Stop E574, Los Alamos, New Mexico 87545, United States
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11
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Klyndyuk AI, Chizhova EA, Kharytonau DS, Medvedev DA. Layered Oxygen-Deficient Double Perovskites as Promising Cathode Materials for Solid Oxide Fuel Cells. MATERIALS 2021; 15:ma15010141. [PMID: 35009288 PMCID: PMC8746150 DOI: 10.3390/ma15010141] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/28/2021] [Revised: 12/18/2021] [Accepted: 12/22/2021] [Indexed: 11/16/2022]
Abstract
Development of new functional materials with improved characteristics for solid oxide fuel cells (SOFCs) and solid oxide electrolysis cells (SOECs) is one of the most important tasks of modern materials science. High electrocatalytic activity in oxygen reduction reactions (ORR), chemical and thermomechanical compatibility with solid electrolytes, as well as stability at elevated temperatures are the most important requirements for cathode materials utilized in SOFCs. Layered oxygen-deficient double perovskites possess the complex of the above-mentioned properties, being one of the most promising cathode materials operating at intermediate temperatures. The present review summarizes the data available in the literature concerning crystal structure, thermal, electrotransport-related, and other functional properties (including electrochemical performance in ORR) of these materials. The main emphasis is placed on the state-of-art approaches to improving the functional characteristics of these complex oxides.
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Affiliation(s)
- Andrei I. Klyndyuk
- Department of Physical, Colloid and Analytical Chemistry, Organic Substances Technology Faculty, Belarusian State Technological University, Sverdlova 13a, 220006 Minsk, Belarus;
- Correspondence:
| | - Ekaterina A. Chizhova
- Department of Physical, Colloid and Analytical Chemistry, Organic Substances Technology Faculty, Belarusian State Technological University, Sverdlova 13a, 220006 Minsk, Belarus;
| | - Dzmitry S. Kharytonau
- Jerzy Haber Institute of Catalysis and Surface Chemistry, Polish Academy of Sciences, Niezapominajek 8, 30-239 Krakow, Poland;
| | - Dmitry A. Medvedev
- Laboratory of Electrochemical Devices Based on Solid Oxide Proton Electrolytes, Institute of High Temperature Electrochemistry, Ural Branch of Russian Academy of Sciences, 620660 Ekaterinburg, Russia;
- Hydrogen Energy Laboratory, Ural Federal University, 620002 Ekaterinburg, Russia
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12
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Ziati M, Bekkioui N, Ez-Zahraouy H. Ruddlesden-Popper compound Sr2TiO4 doped with chalcogens for optoelectronic applications: Insights from first-principle calculations. Chem Phys 2021. [DOI: 10.1016/j.chemphys.2021.111221] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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13
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Yu X, Zhou Q, Xu J, Liang L, Wang X, Wu J, Gao P. The Impact of PbI
2
:KI Alloys on the Performance of Sequentially Deposited Perovskite Solar Cells. Eur J Inorg Chem 2021. [DOI: 10.1002/ejic.202001109] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/22/2023]
Affiliation(s)
- Xiaoyan Yu
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures and Fujian Provincial Key Laboratory of Nanomaterials Institution Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou, Fujian 350002 China
- Laboratory for Advanced Functional Materials Xiamen Institute of Rare Earth Materials Haixi Institute Chinese Academy of Sciences Xiamen 361021 China
- University of Chinese Academy of Sciences Beijing 100049 China
| | - Qin Zhou
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures and Fujian Provincial Key Laboratory of Nanomaterials Institution Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou, Fujian 350002 China
- Laboratory for Advanced Functional Materials Xiamen Institute of Rare Earth Materials Haixi Institute Chinese Academy of Sciences Xiamen 361021 China
- University of Chinese Academy of Sciences Beijing 100049 China
| | - Jianbin Xu
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures and Fujian Provincial Key Laboratory of Nanomaterials Institution Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou, Fujian 350002 China
- Laboratory for Advanced Functional Materials Xiamen Institute of Rare Earth Materials Haixi Institute Chinese Academy of Sciences Xiamen 361021 China
- University of Chinese Academy of Sciences Beijing 100049 China
| | - Lusheng Liang
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures and Fujian Provincial Key Laboratory of Nanomaterials Institution Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou, Fujian 350002 China
- Laboratory for Advanced Functional Materials Xiamen Institute of Rare Earth Materials Haixi Institute Chinese Academy of Sciences Xiamen 361021 China
- University of Chinese Academy of Sciences Beijing 100049 China
| | - Xiaobing Wang
- College of Materials Science and Engineering Huaqiao University Xiamen 361021 China
| | - Jihuai Wu
- College of Materials Science and Engineering Huaqiao University Xiamen 361021 China
| | - Peng Gao
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures and Fujian Provincial Key Laboratory of Nanomaterials Institution Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou, Fujian 350002 China
- Laboratory for Advanced Functional Materials Xiamen Institute of Rare Earth Materials Haixi Institute Chinese Academy of Sciences Xiamen 361021 China
- University of Chinese Academy of Sciences Beijing 100049 China
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14
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Qin Y, Yang L, Wei J, Yang S, Zhang M, Wang X, Yang F. Doping Effect on Cu 2Se Thermoelectric Performance: A Review. MATERIALS (BASEL, SWITZERLAND) 2020; 13:E5704. [PMID: 33327543 PMCID: PMC7765055 DOI: 10.3390/ma13245704] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/07/2020] [Revised: 12/07/2020] [Accepted: 12/08/2020] [Indexed: 11/24/2022]
Abstract
Cu2Se, owing to its intrinsic excellent thermoelectric (TE) performance emerging from the peculiar nature of "liquid-like" Cu+ ions, has been regarded as one of the most promising thermoelectric materials recently. However, the commercial use is still something far from reach unless effective approaches can be applied to further increase the figure of merit (ZT) of Cu2Se, and doping has shown wide development prospect. Until now, the highest ZT value of 2.62 has been achieved in Al doped samples, which is twice as much as the original pure Cu2Se. Herein, various doping elements from all main groups and some transitional groups that have been used as dopants in enhancing the TE performance of Cu2Se are summarized, and the mechanisms of TE performance enhancement are analyzed. In addition, points of great concern for further enhancing the TE performance of doped Cu2Se are proposed.
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Affiliation(s)
- Yuanhao Qin
- College of Microelectronics and Research Center of Materials and Optoelectronics, University of Chinese Academy of Sciences, Beijing 100049, China; (Y.Q.); (L.Y.); (M.Z.); (F.Y.)
| | - Liangliang Yang
- College of Microelectronics and Research Center of Materials and Optoelectronics, University of Chinese Academy of Sciences, Beijing 100049, China; (Y.Q.); (L.Y.); (M.Z.); (F.Y.)
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
| | - Jiangtao Wei
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
| | - Shuqi Yang
- Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute Troy, New York, NY 12180, USA;
| | - Mingliang Zhang
- College of Microelectronics and Research Center of Materials and Optoelectronics, University of Chinese Academy of Sciences, Beijing 100049, China; (Y.Q.); (L.Y.); (M.Z.); (F.Y.)
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
| | - Xiaodong Wang
- College of Microelectronics and Research Center of Materials and Optoelectronics, University of Chinese Academy of Sciences, Beijing 100049, China; (Y.Q.); (L.Y.); (M.Z.); (F.Y.)
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
- Beijing Institute of Quantum Information Science, Beijing 100193, China
- Beijing Semiconductor Micro/Nano Integrated Engineering Technology Research Center, Beijing 100083, China
| | - Fuhua Yang
- College of Microelectronics and Research Center of Materials and Optoelectronics, University of Chinese Academy of Sciences, Beijing 100049, China; (Y.Q.); (L.Y.); (M.Z.); (F.Y.)
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
- Beijing Institute of Quantum Information Science, Beijing 100193, China
- Beijing Semiconductor Micro/Nano Integrated Engineering Technology Research Center, Beijing 100083, China
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15
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Sun H, Yang C, Wang M, Ma X. Remarkable High Thermoelectric Conversion Efficiency Materials of BeMF
3
(M = Al, Y). ADVANCED THEORY AND SIMULATIONS 2020. [DOI: 10.1002/adts.202000171] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
Affiliation(s)
- Hai‐Long Sun
- School of Physics and Optoelectronic Engineering Ludong University Yantai 264025 P. R. China
| | - Chuan‐Lu Yang
- School of Physics and Optoelectronic Engineering Ludong University Yantai 264025 P. R. China
| | - Mei‐Shan Wang
- School of Physics and Optoelectronic Engineering Ludong University Yantai 264025 P. R. China
| | - Xiao‐Guang Ma
- School of Physics and Optoelectronic Engineering Ludong University Yantai 264025 P. R. China
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16
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Yan L, Wang M, Zhai C, Zhao L, Lin S. Symmetry Breaking Induced Anisotropic Carrier Transport and Remarkable Thermoelectric Performance in Mixed Halide Perovskites CsPb(I 1-xBr x) 3. ACS APPLIED MATERIALS & INTERFACES 2020; 12:40453-40464. [PMID: 32790315 DOI: 10.1021/acsami.0c07501] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We present a combination of first-principles calculations and the Boltzmann transport theory to understand the carrier transport and thermoelectric performance of mixed halide perovskite alloys CsPb(I1-xBrx)3 with different Br compositions. Our computational results correlate the conduction band splitting in CsPb(I1-xBrx)3 to the significant anisotropy in their carrier transport properties, such as effective masses and deformation potential constants. Such band splitting originates from the symmetry-broken crystal structures of CsPb(I1-xBrx)3 polymorphs: with residue stresses/strains in asymmetric CsPb(I1-xBrx)3, nondegenerate orbitals reconstruct the conduction band and reduce the Pb-halide antibonding character along certain directions. While the Seebeck coefficient (S) and the relaxation time-normalized electrical conductivity (σ/τ) show weak directional anisotropy, the carrier relaxation time (τ) is highly direction-dependent. The reconstruction of the conduction band finally leads to significantly anisotropic and enhanced thermoelectric power factors (PF = S2σ) in CsPb(I1-xBrx)3 compared to those in pure CsPbI3 and CsPbBr3, showing anomalous nonlinear alloy behavior. A delicate balance between S2σ and combined measurement of the carrier effective mass and deformation potential constant, m*EDP, is confirmed. The lattice thermal conductivities of CsPb(I1-xBrx)3 are significantly suppressed compared to those of their pure counterparts due to strong mass disordering and strain fields upon halogen substitution. As a result, symmetry breaking in CsPb(I1-xBrx)3 leads to anisotropy in carrier transport, high PF, and scattered phonon transport (ultralow thermal conductivity), concurrently contributing to their promising thermoelectric figures of merit (ZT) up to 1.7 at room temperature. The principles behind the asymmetry-induced factors would serve as new design concepts to tailor the thermoelectric properties of alloys, mixtures, superlattices, and low-dimensional materials.
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Affiliation(s)
- Lifu Yan
- National Engineering Research Center of Turbo-Generator Vibration, School of Energy and Environment, Southeast University, Nanjing, Jiangsu 210096, China
| | - Mingchao Wang
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
| | - Chenxi Zhai
- Department of Mechanical Engineering, FAMU-FSU College of Engineering, Florida State University, Tallahassee, Florida 32310, United States
| | - Lingling Zhao
- National Engineering Research Center of Turbo-Generator Vibration, School of Energy and Environment, Southeast University, Nanjing, Jiangsu 210096, China
| | - Shangchao Lin
- Institute of Engineering Thermophysics, School of Mechanical and Power Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
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17
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Zhu T, Yang Y, Gong X. Recent Advancements and Challenges for Low-Toxicity Perovskite Materials. ACS APPLIED MATERIALS & INTERFACES 2020; 12:26776-26811. [PMID: 32432455 DOI: 10.1021/acsami.0c02575] [Citation(s) in RCA: 24] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Lead-based organic-inorganic hybrid perovskite materials have been developed for advanced optoelectronic applications. However, the toxicity of lead and the chemical instability of lead-based perovskite materials have so far been demonstrated to be an overwhelming challenge. The discovery of perovskite materials based on low-toxicity elements, such as Sn, Bi, Sb, Ge, and Cu, with superior optoelectronic properties provides alternative approaches to realize high-performance perovskite optoelectronics. In this review, recent advances in the aspects of low-toxicity perovskite solar cells, photodetectors, light-emitting diodes, and thermoelectric devices are highlighted. The antioxidation stability of metal cation and the crystallization process of the low-toxicity perovskite materials are discussed. In the last part, the outlook toward addressing various issues requiring further attention in the development of low-toxicity perovskite materials is outlined.
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Affiliation(s)
- Tao Zhu
- Department of Polymer Engineering, College of Polymer Science and Polymer Engineering, The University of Akron, Akron, Ohio 44325, United States
| | - Yongrui Yang
- Department of Polymer Engineering, College of Polymer Science and Polymer Engineering, The University of Akron, Akron, Ohio 44325, United States
| | - Xiong Gong
- Department of Polymer Engineering, College of Polymer Science and Polymer Engineering, The University of Akron, Akron, Ohio 44325, United States
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19
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Modelling a Segmented Skutterudite-Based Thermoelectric Generator to Achieve Maximum Conversion Efficiency. APPLIED SCIENCES-BASEL 2020. [DOI: 10.3390/app10010408] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Thermoelectric generator (TEG) modules generally have a low conversion efficiency. Among the reasons for the lower conversion efficiency is thermoelectric (TE) material mismatch. Hence, it is imperative to carefully select the TE material and optimize the design before any mass-scale production of the modules. Here, with the help of Comsol-Multiphysics (5.3) software, TE materials were carefully selected and the design was optimized to achieve a higher conversion efficiency. An initial module simulation (32 couples) of unsegmented skutterudite Ba0.1Yb0.2Fe0.1Co3.9Sb12 (n-type) and Ce0.5Yb0.5Fe3.25Co0.75Sb12 (p-type) TE materials was carried out. At the temperature gradient T∆ = 500 K, a maximum simulated conversion efficiency of 9.2% and a calculated efficiency of 10% were obtained. In optimization via segmentation, the selection of TE materials, considering compatibility factor (s) and ZT, was carefully done. On the cold side, Bi2Te3 (n-type) and Sb2Te3 (p-type) TE materials were added as part of the segmentation, and at the same temperature gradient, an open circuit voltage of 6.2 V matched a load output power of 45 W, and a maximum simulated conversion efficiency of 15.7% and a calculated efficiency of 17.2% were achieved. A significant increase in the output characteristics of the module shows that the segmentation is effective. The TEG shows promising output characteristics.
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20
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Bhansali S, Khunsin W, Chatterjee A, Santiso J, Abad B, Martin-Gonzalez M, Jakob G, Sotomayor Torres CM, Chávez-Angel E. Enhanced thermoelectric properties of lightly Nb doped SrTiO 3 thin films. NANOSCALE ADVANCES 2019; 1:3647-3653. [PMID: 36133557 PMCID: PMC9419777 DOI: 10.1039/c9na00361d] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/07/2019] [Accepted: 07/30/2019] [Indexed: 06/16/2023]
Abstract
Novel thermoelectric materials developed for operation at room temperature must have similar or better performance along with being as ecofriendly as those commercially used, e.g., Bi2Te3, in terms of their toxicity and cost. In this work, we present an in-depth study of the thermoelectric properties of epitaxial Nb-doped strontium titanate (SrTi1-x Nb x O3) thin films as a function of (i) doping concentration, (ii) film thickness and (iii) substrate type. The excellent crystal quality was confirmed by high resolution transmission electron microscopy and X-ray diffraction analysis. The thermoelectric properties were measured by the three-omega method (thermal conductivity) and van der Pauw method (electrical resistivity), complemented by Seebeck coefficient measurements. A maximum power factor of 8.9 × 10-3 W m-1 K-2 and a thermoelectric figure of merit of 0.49 were measured at room temperature in 50 nm-thick films grown on lanthanum strontium aluminate. The mechanisms behind this high figure of merit are discussed in terms of a possible two-dimensional electron gas, increase of the effective mass of the electrons, electron filtering and change in strain due to different substrates. The overall enhancement of the thermoelectric properties suggests that SrTi1-x Nb x O3 is a very promising n-type candidate for room- to high-temperature applications.
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Affiliation(s)
- S Bhansali
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, The Barcelona Institute of Science and Technology Campus UAB, Bellaterra 08193 Barcelona Spain
| | - W Khunsin
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, The Barcelona Institute of Science and Technology Campus UAB, Bellaterra 08193 Barcelona Spain
| | - A Chatterjee
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, The Barcelona Institute of Science and Technology Campus UAB, Bellaterra 08193 Barcelona Spain
| | - J Santiso
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, The Barcelona Institute of Science and Technology Campus UAB, Bellaterra 08193 Barcelona Spain
| | - B Abad
- Instituto de Microelectronica de Madrid, IMM-CNM, CSIC Isaac Newton, 8 PTM 28760 Tres Cantos (Madrid) Spain
| | - M Martin-Gonzalez
- Instituto de Microelectronica de Madrid, IMM-CNM, CSIC Isaac Newton, 8 PTM 28760 Tres Cantos (Madrid) Spain
| | - G Jakob
- Institut für Physik, Johannes Gutenberg Universität Mainz Staudingerweg 7 55128 Mainz Germany
- Graduate School Materials Science in Mainz Staudingerweg 9 55128 Mainz Germany
| | - C M Sotomayor Torres
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, The Barcelona Institute of Science and Technology Campus UAB, Bellaterra 08193 Barcelona Spain
- ICREA Passeig Lluis Companys 23 08010 Barcelona Spain
| | - E Chávez-Angel
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, The Barcelona Institute of Science and Technology Campus UAB, Bellaterra 08193 Barcelona Spain
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