Economic Friendly ZnO-Based UV Sensors Using Hydrothermal Growth: A Review

Preparation and Application of Co-Doped Zinc Oxide: A Review

Due to a wide band gap and large exciton binding energy, zinc oxide (ZnO) is currently receiving much attention in various areas, and can be prepared in various forms including nanorods, nanowires, nanoflowers, and so on. The reliability of ZnO produced by a single dopant is unstable, which in turn promotes the development of co-doping techniques. Co-doping is a very promising technique to effectively modulate the optical, electrical, magnetic, and photocatalytic properties of ZnO, as well as the ability to form various structures. In this paper, the important advances in co-doped ZnO nanomaterials are summarized, as well as the preparation of co-doped ZnO nanomaterials by using different methods, including hydrothermal, solvothermal, sol-gel, and acoustic chemistry. In addition, the wide range of applications of co-doped ZnO nanomaterials in photocatalysis, solar cells, gas sensors, and biomedicine are discussed. Finally, the challenges and future prospects in the field of co-doped ZnO nanomaterials are also elucidated.

Exploitation of green synthesized chromium doped zinc oxide nanorods (NRs) mediated by flower extract of Rhododendron arboreum for highly efficient photocatalytic degradation of cationic dyes Malachite green (MG) and Fuchsin basic (FB)

In this work, green method to synthesize chromium-doped zinc oxide (ZnO) nanorods (NRs) using an aqueous flower extract from Rhododendron arboretum is explored. Herein, chromium-doped ZnO NRs were prepared with different amount of chromium doping, varied as 2-10%. The green synthesized products underwent substantial analysis through X-ray diffraction (XRD), spectroscopic such as ultraviolet spectroscopy(UV-Vis) and scanning electron microscopy (SEM) methods. All samples were found to have hexagonal wurtzite ZnO, with average particle sizes of 52.41, 56.6, 54.44, 53.05, and 56.99 nm, respectively, for 2, 4, 6, 8, and 10% chromium doping in ZnO NRs. The Cr-doped ZnO NRs exhibited remarkable photocatalytic degradation activity of cationic dyes under UV-light, i.e., Malachite Green and Fuchsin Basic with degradation of 99.604 and 99.881%, respectively in 90 min. The reusability tests for these green synthesized Cr-doped ZnO NRs have also been carried out, showed 9-11 cycles with 85% of degradation efficiency. In addition, the Cr-doped ZnO NRs exhibited high selectivity for cationic dyes when experiments against mixture of dyes were performed. Photodegradation kinetics followed the pseudo-first-order model. The flower-extract-stabilized chromium-doped ZnO NRs demonstrated high photocatalytic activity toward malachite green and fuchsin basic dyes, potential material for pollution remediation.

Toward Intelligent Display with Neuromorphic Technology

In the era of the Internet and the Internet of Things, display technology has evolved significantly toward full-scene display and realistic display. Incorporating "intelligence" into displays is a crucial technical approach to meet the demands of this development. Traditional display technology relies on distributed hardware systems to achieve intelligent displays but encounters challenges stemming from the physical separation of sensing, processing, and light-emitting modules. The high energy consumption and data transformation delays limited the development of intelligence display, breaking the physical separation is crucial to overcoming the bottlenecks of intelligence display technology. Inspired by the biological neural system, neuromorphic technology with all-in-one features is widely employed across various fields. It proves effective in reducing system power consumption, facilitating frequent data transformation, and enabling cross-scene integration. Neuromorphic technology shows great potential to overcome display technology bottlenecks, realizing the full-scene display and realistic display with high efficiency and low power consumption. This review offers a comprehensive summary of recent advancements in the application of neuromorphic technology in displays, with a focus on interoperability. This work delves into its state-of-the-art designs and potential future developments aimed at revolutionizing display technology.

Utilizing Gold Nanoparticle Decoration for Enhanced UV Photodetection in CdS Thin Films Fabricated by Pulsed Laser Deposition: Exploiting Plasmon-Induced Effects

UV sensors hold significant promise for various applications in both military and civilian domains. However, achieving exceptional detectivity, responsivity, and rapid rise/decay times remains a notable challenge. In this study, we address this challenge by investigating the photodetection properties of CdS thin films and the influence of surface-deposited gold nanoparticles (AuNPs) on their performance. CdS thin films were produced using the pulsed laser deposition (PLD) technique on glass substrates, with CdS layers at a 100, 150, and 200 nm thickness. Extensive characterization was performed to evaluate the thin films' structural, morphological, and optical properties. Photodetector devices based on CdS and AuNPs/CdS films were fabricated, and their performance parameters were evaluated under 365 nm light illumination. Our findings demonstrated that reducing CdS layer thickness enhanced performance concerning detectivity, responsivity, external quantum efficiency (EQE), and photocurrent gain. Furthermore, AuNP deposition on the surface of CdS films exhibited a substantial influence, especially on devices with thinner CdS layers. Among the configurations, AuNPs/CdS(100 nm) demonstrated the highest values in all evaluated parameters, including detectivity (1.1×1012 Jones), responsivity (13.86 A/W), EQE (47.2%), and photocurrent gain (9.2).

A Porous Nanostructured ZnO Layer for Ultraviolet Sensing with Quartz Crystal Microbalance Technique

Porous films of metals and metal oxides have gained growing attention as potential materials for use in applications that require large, specific surface areas, such as sensors, supercapacitors, and batteries. In this study, a "black-metal"-like porous Zn-ZnO composite layer was grown by room temperature co-sputtering of Zn metal and ZnO:Ga (3 at/%) ceramic targets. Following deposition, a porous ZnO layer was obtained by a subsequent thermal annealing process at 400 °C in air. The morphology and structural properties of the obtained porous layered objects were analyzed. The porosity and chemical characteristics of the nanostructured ZnO layer obtained with the method herein described make it suitable to be used as a sensitivity-enhancing active layered element in quartz crystal microbalance (QCM)-based ultraviolet (UV) sensors. The prepared resonant ZnO/QCM sensors under UV radiation exhibited maximum shift up to 35 Hz for several "on-off" UV cycles, excellent response, and recovery times of 11 and 12 s, respectively.

Various Applications of ZnO Thin Films Obtained by Chemical Routes in the Last Decade

This review addresses the importance of Zn for obtaining multifunctional materials with interesting properties by following certain preparation strategies: choosing the appropriate synthesis route, doping and co-doping of ZnO films to achieve conductive oxide materials with p- or n-type conductivity, and finally adding polymers in the oxide systems for piezoelectricity enhancement. We mainly followed the results of studies of the last ten years through chemical routes, especially by sol-gel and hydrothermal synthesis. Zinc is an essential element that has a special importance for developing multifunctional materials with various applications. ZnO can be used for the deposition of thin films or for obtaining mixed layers by combining ZnO with other oxides (ZnO-SnO2, ZnO-CuO). Also, composite films can be achieved by mixing ZnO with polymers. It can be doped with metals (Li, Na, Mg, Al) or non-metals (B, N, P). Zn is easily incorporated in a matrix and therefore it can be used as a dopant for other oxidic materials, such as: ITO, CuO, BiFeO3, and NiO. ZnO can be very useful as a seed layer, for good adherence of the main layer to the substrate, generating nucleation sites for nanowires growth. Thanks to its interesting properties, ZnO is a material with multiple applications in various fields: sensing technology, piezoelectric devices, transparent conductive oxides, solar cells, and photoluminescence applications. Its versatility is the main message of this review.

In-Situ Growth of ZnO Whiskers on Ti2ZnC MAX Phases

ZnO whiskers have many applications, such as in medical and photocatalysis fields. In this study, an unconventional preparation approach is reported, realizing the in-situ growth of ZnO whiskers on Ti₂ZnC. The weak bonding between the layer of Ti₆C-octahedron and the Zn-atom layers leads to the easy extraction of Zn atoms from Ti₂ZnC lattice points, resulting in the formation of ZnO whiskers on the Ti₂ZnC surface. This is the first time that ZnO whiskers have been found to grow in-situ on Ti₂ZnC substrate. Further, this phenomenon is amplified when the size of the Ti₂ZnC grains is mechanically reduced by ball-milling, which bodes a promising route to prepare ZnO in-situ on a large scale. Additionally, this finding can also help us better understand the stability of Ti₂ZnC and the whiskering mechanism of MAX phases.

Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices

Resistive random access memory (RRAM) has two distinct processes, the SET and RESET processes, that control the formation and dissolution of conductive filament, respectively. The laws of thermodynamics state that these processes correspond to the lowest possible level of free energy. In an RRAM device, a high operating voltage causes device degradation, such as bends, cracks, or bubble-like patterns. In this work, we developed a statistical simulation of the switching mechanism in a ZnO-based RRAM. The model used field-driven ion migration and temperature effects to design a ZnO-based RRAM dynamic SET and RESET resistance transition process. We observed that heat transport within the conducting filament generated a great deal of heat energy due to the carrier transport of the constituent dielectric material. The model was implemented using the built-in COMSOL Multiphysics software to address heat transfer, electrostatic, and yield RRAM energy. The heat energy increased with the increase in the operating power. Hence, the reliability of a device with high power consumption cannot be assured. We obtained various carrier heat analyses in 2D images and concluded that developing RRAM devices with low operating currents through material and structure optimization is crucial.