A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations

Effects of firebricks for industrial process heat on the cost of matching all-sector energy demand with 100% wind-water-solar supply in 149 countries

Refractory bricks are bricks that can withstand high temperatures without damage to their structures. They have been used to insulate kilns, furnaces, and other hot enclosures for thousands of years. Firebricks are refractory bricks that can, with one composition, store heat, and with another, insulate the firebricks that store the heat. Because firebricks are made from common materials, the cost per kilowatt-hour-thermal of a firebrick storage system is less than one-tenth the cost per kilowatt-hour-electricity of a battery system. It has thus been hypothesized that using excess renewable electricity to produce and store industrial process heat in firebricks can provide a low-cost source of continuous heat for industry. Here, it is hypothesized further that, upon a transition to 100% clean, renewable energy worldwide, using firebricks to store industrial process heat can reduce electricity generator, electricity storage, and low-temperature heat storage needs, thereby reducing overall energy cost. Both hypotheses are tested across 149 countries combined into 29 world regions. Results suggest, relative to a base case with no firebricks, using firebricks may reduce, among all 149 countries, 2050 battery capacity by ∼14.5%, annual hydrogen production for grid electricity by ∼31%, underground low-temperature heat storage capacity by ∼27.3%; onshore wind nameplate capacity by ∼1.2%, land needs by ∼0.4%, and overall annual energy cost by ∼1.8%. In sum, the use of firebricks for storing industrial process heat appears to be a remarkable tool in reducing the cost of transitioning to clean, renewable energy across all energy sectors.

Polarization-insensitive perfect absorption in van der waals hyper-structure

Infrared perfect absorption has been widely investigated due to its potential applications in photodetectors, photovoltaics and medical diagnostics. In this report, we demonstrate that at particular infrared frequencies, a simple planar structure made up of graphene-hexagonal Boron Nitride (hBN) hyper-structure is able to nearly perfectly absorb incident light irrespective of its polarization (Transverse-Magnetic TM, or Transverse-Electric TE). By using this interferenceless technique, the hyper-structure achieves nearly zero reflectance at a wide range of angles in a narrow frequency band. We analytically predict the condition of achieving such an important feature of perfect absorption for both TM and TE polarizations. Interestingly, the infrared perfect absorption can be redshifted by increasing the thickness of the hBN layers and blueshifted by increasing the graphene's chemical potential. Such flexible control of infrared perfect absorption offers a new tool for controlling electromagnetic waves and has potential applications in photodetection and other light control applications.

Ultra-High Concentration Vertical Homo-Multijunction Solar Cells for CubeSats and Terrestrial Applications

This paper examines advances in ultra-high concentration photovoltaics (UHCPV), focusing specifically on vertical multijunction (VMJ) solar cells. The use of gallium arsenide (GaAs) in these cells increases their efficiency in a range of applications, including terrestrial and space settings. Several multijunction structures are designed to maximize conversion efficiency, including a vertical tunnel junction, which minimizes resistive losses at high concentration levels compared with standard designs. Therefore, careful optimization of interconnect layers in terms of thickness and doping concentration is needed. Homo-multijunction GaAs solar cells have been simulated and analyzed by using ATLAS Silvaco 5.36 R, a sophisticated technology computer-aided design (TCAD) tool aimed to ensure the reliability of simulation by targeting a high conversion efficiency and a good fill factor for our proposed structure model. Several design parameters, such as the dimensional cell structure, doping density, and sun concentrations, have been analyzed to improve device performance under direct air mass conditions AM1.5D. The optimized conversion efficiency of 30.2% has been achieved with investigated GaAs solar cell configuration at maximum concentration levels.

High-Selectivity Planar Thermal Emitter with a Stable Temperature over 1400 K for a Thermophotovoltaic System

A selective thermal emitter with superior thermal stability and perfect selective thermal emission in specific bands can facilitate the lifting of the thermophotovoltaic (TPV) energy conversion efficiency in TPV systems. Scalable planar selective thermal emitters with superior spectral selectivity and robust high-temperature stability are desired to meet the requirements of large-scale deployments of TPV systems. However, stably reradiating the available thermal photons at above 1273 K remains a significant challenge for selective thermal emitters. In this work, we demonstrated a high-selectivity planar thermal emitter based on the composite ceramic of ZrC and Al2O3. The prepared selective thermal emitter provides an emissivity of around 90% above the photon energy (0.6 eV) at 1423 K, a strong emission suppression effect below 0.6 eV, and superior thermal stability up to at least 1423 K. Therefore, the overall spectral efficiency can reach around 53%. Coupled with an InGaAs PV cell, the TPV system based on the selective thermal emitter demonstrates a predicted heat-to-electricity power conversion efficiency of 29.78% at 1423 K due to the matched spectral response of the emitter with the PV cell. Our work opens a new way forward for TPV systems based on planar selective thermal emitters.

Predictive analysis of the power spectral irradiance from blackbody radiation source using single pixel detector

Accurate spectral irradiance measurement in the near-infrared range is significant for the design and characterization of photodetector and photovoltaic cells. Approximation method is commonly used to solve for the input power using estimated spectral irradiance, where the dependency on wavelength and temperature remains uncertain. This study aims to determine the power spectrum at different radiation temperatures using a single pixel photodetector, taking into consideration factors such as transmission spectra of alumina radiator, CaF2 collimating lens, responsivity, and measured photocurrent information of photodetectors. Utilizing predictive mathematical model, five commercial photodetectors, including Silicon, Germanium, In0.53Ga0.47As, In0.73Ga0.27As, and In0.83Ga0.17As were used to solve for the power densities as a function of wavelengths at radiation temperatures of 1000 °C and 1500 °C. The spectral irradiance of photodetectors was determined with a percentage difference of <4.9 %, presenting an accurate power density estimation for the spectrum at a wide range of radiation temperatures. Power irradiance data obtained were validated in the narrow wavelength range with 1000 nm, 1400 nm, 1500 nm, and 2000 nm bandpass filters. The reported work demonstrates a simple and efficient way which could contribute to develop a cost-effective method of measuring and determining the spectrum irradiances of objects at different radiation temperatures. This predictive analysis method hopefully intensifies the progress of efforts to reduce the reliance on complex optoelectronic instruments in accurately solving power irradiance information.

A global biological conservation horizon scan of issues for 2023

We present the results of our 14th horizon scan of issues we expect to influence biological conservation in the future. From an initial set of 102 topics, our global panel of 30 scientists and practitioners identified 15 issues we consider most urgent for societies worldwide to address. Issues are novel within biological conservation or represent a substantial positive or negative step change at global or regional scales. Issues such as submerged artificial light fisheries and accelerating upper ocean currents could have profound negative impacts on marine or coastal ecosystems. We also identified potentially positive technological advances, including energy production and storage, improved fertilisation methods, and expansion of biodegradable materials. If effectively managed, these technologies could realise future benefits for biological diversity.

Bowtie Nanoantenna Coupled Metal-Oxide-Silicon (p-Doped) Diode for 28.3 THz IR Rectification

Low-temperature waste heat in the infrared (IR) wavelength region offers an opportunity to harvest power from waste energy and requires further investigation in order to find efficient conversion techniques. Although grating-coupled metal-oxide-semiconductor (MOS) diode devices offer efficient conversion from low and moderate-temperature thermal sources, the integration of such diodes with a nanoantenna structure has yet to be explored. We propose a bowtie nanoantenna coupled with a p-doped MOS diode for IR to direct current (DC) conversion without any bias voltage at 28.3 THz. The nanoantenna was designed and optimized to provide maximum field enhancement in a 4 nm-thick oxide layer at the resonant frequency. The device was fabricated following the complementary MOS (CMOS) fabrication process and measured in a custom DC and optical characterization setup using a 10.6 μm wavelength CO2 laser. The results reveal two different types of devices with linear and nonlinear I-V curves having kΩ and MΩ zero-bias resistance, respectively. The linear device generates a micron-level open-circuit voltage (Voc) with clear polarization dependence from the laser input, but the nonlinear case suffers from a weak noise-like signal. Finally, we analyze two types of devices using thermoelectric and tunneling effects and discuss the future direction of nanoantenna-integrated MOS devices for efficient IR harvesters.

Refractory All-Ceramic Thermal Emitter for High-Temperature Near-Field Thermophotovoltaics

Thermophotovoltaics is a promising technology for heat recovery and has garnered tremendous attention in the last decades. This work theoretically evaluates the performance of a thermophotovoltaic system equipped with refractory all-ceramic selective thermal emitters made of boron carbide, silicon carbide and beryllium oxide for a high working temperature of 2000 ∘C, which corresponds to the external quantum efficiency of a SiC/Si tandem cell. The influence of thickness and filling ratio on the emissivity of thermal emitters over the wavelength ranging from 0.2 μm to 2.5 μm is studied. The corresponding spectral heat flux and output power are analyzed as well. For a specific configuration, the parameters for the thermophotovoltaic system are obtained, including short circuit current, open circuit voltage, fill factor, total heat flux, output power and conversion efficiency. The proposed all-ceramic thermal emitter ensures the robustness in the high-temperature working condition due to its thermal stability. The tuning of emissivity is achieved and analyzed based on distinct emitter nanostructures, and the further influence on the thermophotovoltaic system performance is deeply explored. This work sheds light on research of high-temperature thermal management and power generation.

First-Principles Study of High-Pressure Phase Stability and Electron Properties of Be-P Compounds

New, stable stoichiometries in Be-P systems are investigated up to 100 GPa by the CALYPSO structure prediction method. Along with the BeP₂-I4₁/amd structure, we identify two novel compounds of Be₃P₂-P-42₁m and Be₃P₂-C2/m. It should be noted that the Be-P compounds are predicted to be energetically unfavorable above 40 GPa. As can be seen, interesting structures may be experimentally synthesizable at modest pressure. Our results indicate that at 33.2 GPa, the most stable ambient-pressure tetragonal Be₃P₂-P-42₁m transitions to the monoclinic Be₃P₂-C2/m structure. Moreover, the predicted Be₃P₂-P-42₁m and Be₃P₂-C2/m phases are energetically favored compared with the Be₃P₂-Ia-3 structure synthesized experimentally. Electronic structure calculations reveal that BeP₂-I4₁/amd, Be₃P₂-P-42₁m, and Be₃P₂-C2/m are all semiconductors with a narrow band gap. The present findings offer insight and guidance for exploration toward further fundamental understanding and potential applications in the semiconductor field.