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Wood AA, McCloskey DJ, Dontschuk N, Lozovoi A, Goldblatt RM, Delord T, Broadway DA, Tetienne JP, Johnson BC, Mitchell KT, Lew CTK, Meriles CA, Martin AM. 3D-Mapping and Manipulation of Photocurrent in an Optoelectronic Diamond Device. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2405338. [PMID: 39177116 DOI: 10.1002/adma.202405338] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2024] [Revised: 07/28/2024] [Indexed: 08/24/2024]
Abstract
Establishing connections between material impurities and charge transport properties in emerging electronic and quantum materials, such as wide-bandgap semiconductors, demands new diagnostic methods tailored to these unique systems. Many such materials host optically-active defect centers which offer a powerful in situ characterization system, but one that typically relies on the weak spin-electric field coupling to measure electronic phenomena. In this work, charge-state sensitive optical microscopy is combined with photoelectric detection of an array of nitrogen-vacancy (NV) centers to directly image the flow of charge carriers inside a diamond optoelectronic device, in 3D and with temporal resolution. Optical control is used to change the charge state of background impurities inside the diamond on-demand, resulting in drastically different current flow such as filamentary channels nucleating from specific, defective regions of the device. Conducting channels that control carrier flow, key steps toward optically reconfigurable, wide-bandgap optoelectronics are then engineered using light. This work might be extended to probe other wide-bandgap semiconductors (SiC, GaN) relevant to present and emerging electronic and quantum technologies.
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Affiliation(s)
- Alexander A Wood
- School of Physics, University of Melbourne, Parkville, Victoria, 3010, Australia
| | - Daniel J McCloskey
- School of Physics, University of Melbourne, Parkville, Victoria, 3010, Australia
| | - Nikolai Dontschuk
- School of Physics, University of Melbourne, Parkville, Victoria, 3010, Australia
| | - Artur Lozovoi
- CUNY-The City College of New York, New York, 10031, USA
| | - Russell M Goldblatt
- School of Physics, University of Melbourne, Parkville, Victoria, 3010, Australia
| | - Tom Delord
- CUNY-The City College of New York, New York, 10031, USA
| | - David A Broadway
- School of Science, RMIT University, Melbourne, Victoria, 3000, Australia
| | | | - Brett C Johnson
- School of Science, RMIT University, Melbourne, Victoria, 3000, Australia
| | - Kaih T Mitchell
- School of Physics, University of Melbourne, Parkville, Victoria, 3010, Australia
| | - Christopher T-K Lew
- School of Physics, University of Melbourne, Parkville, Victoria, 3010, Australia
| | - Carlos A Meriles
- CUNY-The City College of New York, New York, 10031, USA
- CUNY - The Graduate Center, New York, NY, 10016, USA
| | - Andy M Martin
- School of Physics, University of Melbourne, Parkville, Victoria, 3010, Australia
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2
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Hasan MM, Wang C, Pala N, Shur M. Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:460. [PMID: 38470789 DOI: 10.3390/nano14050460] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/01/2024] [Revised: 02/21/2024] [Accepted: 02/27/2024] [Indexed: 03/14/2024]
Abstract
High thermal conductivity and a high breakdown field make diamond a promising candidate for high-power and high-temperature semiconductor devices. Diamond also has a higher radiation hardness than silicon. Recent studies show that diamond has exceptionally large electron and hole momentum relaxation times, facilitating compact THz and sub-THz plasmonic sources and detectors working at room temperature and elevated temperatures. The plasmonic resonance quality factor in diamond TeraFETs could be larger than unity for the 240-600 GHz atmospheric window, which could make them viable for 6G communications applications. This paper reviews the potential and challenges of diamond technology, showing that diamond might augment silicon for high-power and high-frequency compact devices with special advantages for extreme environments and high-frequency applications.
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Affiliation(s)
| | - Chunlei Wang
- Mechanical and Aerospace Engineering, University of Miami, Coral Gables, FL 33146, USA
| | - Nezih Pala
- Electrical & Computer Engineering, Florida International University, Miami, FL 33174, USA
| | - Michael Shur
- Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
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3
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Golota NC, Preiss D, Fredin ZP, Patil P, Banks DP, Bahri S, Griffin RG, Gershenfeld N. High aspect ratio diamond nanosecond laser machining. APPLIED PHYSICS. A, MATERIALS SCIENCE & PROCESSING 2023; 129:490. [PMID: 37333570 PMCID: PMC10271884 DOI: 10.1007/s00339-023-06755-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/12/2023] [Accepted: 06/01/2023] [Indexed: 06/20/2023]
Abstract
Laser processing of diamond has become an important technique for fabricating next generation microelectronic and quantum devices. However, the realization of low taper, high aspect ratio structures in diamond remains a challenge. We demonstrate the effects of pulse energy, pulse number and irradiation profile on the achievable aspect ratio with 532 nm nanosecond laser machining. Strong and gentle ablation regimes were observed using percussion hole drilling of type Ib HPHT diamond. Under percussion hole drilling a maximum aspect ratio of 22:1 was achieved with 10,000 pulses. To reach aspect ratios on average 40:1 and up to 66:1, rotary assisted drilling was employed using > 2 M pulse accumulations. We additionally demonstrate methods of obtaining 0.1° taper angles via ramped pulse energy machining in 10:1 aspect ratio tubes. Finally, effects of laser induced damage are studied using confocal Raman spectroscopy with observation of up to 36% increase in tensile strain following strong laser irradiation. However, we report that upon application of 600 °C heat treatment, induced strain is reduced by up to ~ 50% with considerable homogenization of observed strain. Supplementary Information The online version contains supplementary material available at 10.1007/s00339-023-06755-2.
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Affiliation(s)
- Natalie C. Golota
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, MA 02139 USA
- Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, MA 02139 USA
| | - David Preiss
- Center for Bits and Atoms, Massachusetts Institute of Technology, Cambridge, MA 02139 USA
| | - Zachary P. Fredin
- Center for Bits and Atoms, Massachusetts Institute of Technology, Cambridge, MA 02139 USA
| | - Prashant Patil
- Center for Bits and Atoms, Massachusetts Institute of Technology, Cambridge, MA 02139 USA
| | - Daniel P. Banks
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, MA 02139 USA
- Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, MA 02139 USA
| | - Salima Bahri
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, MA 02139 USA
- Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, MA 02139 USA
| | - Robert G. Griffin
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, MA 02139 USA
- Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, MA 02139 USA
| | - Neil Gershenfeld
- Center for Bits and Atoms, Massachusetts Institute of Technology, Cambridge, MA 02139 USA
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4
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Okotrub AV, Sedelnikova OV, Gorodetskiy DV, Fedorenko AD, Asanov IP, Palyanov YN, Lapega AV, Gurova OA, Bulusheva LG. Effect of Titanium and Molybdenum Cover on the Surface Restructuration of Diamond Single Crystal during Annealing. MATERIALS (BASEL, SWITZERLAND) 2023; 16:1650. [PMID: 36837276 PMCID: PMC9965767 DOI: 10.3390/ma16041650] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/26/2023] [Revised: 02/13/2023] [Accepted: 02/14/2023] [Indexed: 06/18/2023]
Abstract
Diamond is an important material for electrical and electronic devices. Because the diamond is in contact with the metal in these applications, it becomes necessary to study the metal-diamond interaction and the structure of the interface, in particular, at elevated temperatures. In this work, we study the interaction of the (100) and (111) surfaces of a synthetic diamond single crystal with spattered titanium and molybdenum films. Atomic force microscopy reveals a uniform coating of titanium and the formation of flattened molybdenum nanoparticles. A thin titanium film is completely oxidized upon contact with air and passes from the oxidized state to the carbide state upon annealing in an ultrahigh vacuum at 800 °C. Molybdenum interacts with the (111) diamond surface already at 500 °C, which leads to the carbidization of its nanoparticles and catalytic graphitization of the diamond surface. This process is much slower on the (100) diamond surface; sp2-hybridized carbon is formed on the diamond and the top of molybdenum carbide nanoparticles, only when the annealing temperature is raised to 800 °C. The conductivity of the resulting sample is improved when compared to the Ti-coated diamond substrates and the Mo-coated (111) substrate annealed at 800 °C. The presented results could be useful for the development of graphene-on-diamond electronics.
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Affiliation(s)
| | - Olga V. Sedelnikova
- Nikolaev Institute of Inorganic Chemistry SB RAS, 630090 Novosibirsk, Russia
| | | | | | - Igor P. Asanov
- Nikolaev Institute of Inorganic Chemistry SB RAS, 630090 Novosibirsk, Russia
| | - Yury N. Palyanov
- Sobolev Institute of Geology and Mineralogy, 630090 Novosibirsk, Russia
| | | | - Olga A. Gurova
- Nikolaev Institute of Inorganic Chemistry SB RAS, 630090 Novosibirsk, Russia
| | - Lyubov G. Bulusheva
- Nikolaev Institute of Inorganic Chemistry SB RAS, 630090 Novosibirsk, Russia
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Boldyrev K, Klimin S, Denisov V, Tarelkin S, Kuznetsov M, Terentiev S, Blank V. UV Light Irradiation Effects in P-Doped Diamonds: Total Content Determination of Phosphorus Donors. MATERIALS (BASEL, SWITZERLAND) 2022; 15:9048. [PMID: 36556854 PMCID: PMC9781816 DOI: 10.3390/ma15249048] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/20/2022] [Revised: 12/10/2022] [Accepted: 12/14/2022] [Indexed: 06/17/2023]
Abstract
Upon the UV light irradiation of single-crystal diamonds doped with phosphorus, several effects have been observed. The integral intensity of phosphorus lines in FTIR absorption spectra under UV radiation was increased. A saturation effect depending on the power of the laser radiation was demonstrated. Narrowing of the phosphorus lines, as well as the redistribution of the intensities in their doublets caused by the Jahn-Teller distortion of the donor ground state, was observed. It was found that these effects are associated with the decompensation of the phosphorus donors. An easy, fast, sensitive, and nondestructive, fully optical method for the determination of the total phosphorus donor's concentration in semiconducting diamonds, as well as its compensation ratio, was proposed.
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Affiliation(s)
- Kirill Boldyrev
- Institute of Spectroscopy, Russian Academy of Sciences, 108840 Moscow, Russia
| | - Sergey Klimin
- Institute of Spectroscopy, Russian Academy of Sciences, 108840 Moscow, Russia
| | - Viktor Denisov
- Institute of Spectroscopy, Russian Academy of Sciences, 108840 Moscow, Russia
- Technological Institute for Superhard and Novel Carbon Materials, 108840 Moscow, Russia
| | - Sergey Tarelkin
- Technological Institute for Superhard and Novel Carbon Materials, 108840 Moscow, Russia
- The All-Russian Research Institute for Optical and Physical Measurements, 119361 Moscow, Russia
| | - Mikhail Kuznetsov
- Technological Institute for Superhard and Novel Carbon Materials, 108840 Moscow, Russia
| | - Sergey Terentiev
- Technological Institute for Superhard and Novel Carbon Materials, 108840 Moscow, Russia
| | - Vladimir Blank
- Technological Institute for Superhard and Novel Carbon Materials, 108840 Moscow, Russia
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Cañas J, Reyes DF, Zakhtser A, Dussarrat C, Teramoto T, Gutiérrez M, Gheeraert E. High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:4125. [PMID: 36500747 PMCID: PMC9739220 DOI: 10.3390/nano12234125] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/27/2022] [Revised: 11/10/2022] [Accepted: 11/16/2022] [Indexed: 06/17/2023]
Abstract
Silicon oxide atomic layer deposition synthesis development over the last few years has open the route to its use as a dielectric within diamond electronics. Its great band-gap makes it a promising material for the fabrication of diamond-metal-oxide field effects transistor gates. Having a sufficiently high barrier both for holes and electrons is mandatory to work in accumulation and inversion regimes without leakage currents, and no other oxide can fulfil this requisite due to the wide diamond band-gap. In this work, the heterojunction of atomic-layer-deposited silicon oxide and (100)-oriented p-type oxygen-terminated diamond is studied using scanning transmission electron microscopy in its energy loss spectroscopy mode and X-ray photoelectron spectroscopy. The amorphous phase of silicon oxide was successfully synthesized with a homogeneous band-gap of 9.4 eV. The interface between the oxide and diamond consisted mainly of single- and double-carbon-oxygen bonds with a low density of interface states and a straddling band setting with a 2.0 eV valence band-offset and 1.9 eV conduction band-offset.
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Affiliation(s)
- Jesús Cañas
- Dpto. Ciencia de los Materiales, Universidad de Cadiz, 11510 Puerto Real, Spain
- Université Grenoble Alpes, CNRS, Grenoble INP, Institut Neel, 38000 Grenoble, France
| | - Daniel F. Reyes
- Dpto. Ciencia de los Materiales, Universidad de Cadiz, 11510 Puerto Real, Spain
- Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla), Avda. Americo Vespucio 49, 41092 Sevilla, Spain
| | - Alter Zakhtser
- Université Grenoble Alpes, CNRS, LTM, 38000 Grenoble, France
| | - Christian Dussarrat
- Air Liquide Laboratories, Yokosuka 239-0847, Japan
- Japanese-French Laboratory for Semiconductor Physics and Technology J-F AST, CNRS, Université Grenoble Alpes, Grenoble INP, University of Tsukuba, Ibaraki 305-8577, Japan
| | - Takashi Teramoto
- Air Liquide Laboratories, Yokosuka 239-0847, Japan
- Japanese-French Laboratory for Semiconductor Physics and Technology J-F AST, CNRS, Université Grenoble Alpes, Grenoble INP, University of Tsukuba, Ibaraki 305-8577, Japan
| | - Marina Gutiérrez
- Dpto. Ciencia de los Materiales, Universidad de Cadiz, 11510 Puerto Real, Spain
| | - Etienne Gheeraert
- Université Grenoble Alpes, CNRS, Grenoble INP, Institut Neel, 38000 Grenoble, France
- Japanese-French Laboratory for Semiconductor Physics and Technology J-F AST, CNRS, Université Grenoble Alpes, Grenoble INP, University of Tsukuba, Ibaraki 305-8577, Japan
- University of Tsukuba, Tsukuba 305-8573, Japan
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7
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Scanning Deposition Method for Large-Area Diamond Film Synthesis Using Multiple Microwave Plasma Sources. NANOMATERIALS 2022; 12:nano12121959. [PMID: 35745298 PMCID: PMC9227223 DOI: 10.3390/nano12121959] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/25/2022] [Revised: 05/31/2022] [Accepted: 06/06/2022] [Indexed: 02/06/2023]
Abstract
The demand for synthetic diamonds and research on their use in next-generation semiconductor devices have recently increased. Microwave plasma chemical vapor deposition (MPCVD) is considered one of the most promising techniques for the mass production of large-sized and high-quality single-, micro- and nanocrystalline diamond films. Although the low-pressure resonant cavity MPCVD method can synthesize high-quality diamonds, improvements are needed in terms of the resulting area. In this study, a large-area diamond synthesis method was developed by arranging several point plasma sources capable of processing a small area and scanning a wafer. A unit combination of three plasma sources afforded a diamond film thickness uniformity of ±6.25% at a wafer width of 70 mm with a power of 700 W for each plasma source. Even distribution of the diamond grains in a size range of 0.1–1 μm on the thin-film surface was verified using field-emission scanning electron microscopy. Therefore, the proposed novel diamond synthesis method can be theoretically expanded to achieve large-area films.
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