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Wang J, Gu Z, Zhao Z, Mei Y, Ke X, Chen Y, Huang G, Mei Y. Atomic layer deposition of Al-doped ZnO nanomembrane with in situmonitoring. NANOTECHNOLOGY 2024; 35:405704. [PMID: 38981451 DOI: 10.1088/1361-6528/ad60ce] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/14/2024] [Accepted: 07/09/2024] [Indexed: 07/11/2024]
Abstract
Due to shortcomings such as poor homogeneity of Al doping, precisely controlling the thickness, inability to conformally deposit on high aspect ratio devices and high pinhole rate, the applications of Al-doped ZnO (AZO) nanomembrane in integrated optoelectronic devices are remarkably influenced. Here, we reportin situmonitoring during the atomic layer deposition (ALD) of AZO nanomembrane by using an integrated spectroscopic ellipsometer. AZO nanomembranes with different compositions were deposited with real-time and precise atomic level monitoring of the deposition process. We specifically investigate the half-reaction and thickness evolution during the ALD processes and the influence of the chamber temperature is also disclosed. Structural characterizations demonstrate that the obtained AZO nanomembranes without any post-treatment are uniform, dense and pinhole-free. The transmittances of the nanomembranes in visible range are >94%, and the optimal conductivity can reach up to 1210 S cm-1. The output of current research may pave the way for AZO nanomembrane to become promising in integrated optoelectronic devices.
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Affiliation(s)
- Jinlong Wang
- Department of Materials Science & State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai 200438, People's Republic of China
- Yiwu Research Institute of Fudan University, Yiwu 322000, Zhejiang, People's Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People's Republic of China
| | - Zilong Gu
- Department of Materials Science & State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai 200438, People's Republic of China
| | - Zhe Zhao
- College of Biological Science and Medical Engineering, Donghua University, Shanghai 201620, People's Republic of China
| | - Yu Mei
- Department of Materials Science & State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai 200438, People's Republic of China
- Yiwu Research Institute of Fudan University, Yiwu 322000, Zhejiang, People's Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People's Republic of China
| | - Xinyi Ke
- Department of Materials Science & State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai 200438, People's Republic of China
- Yiwu Research Institute of Fudan University, Yiwu 322000, Zhejiang, People's Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People's Republic of China
| | - Yihao Chen
- Department of Materials Science & State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai 200438, People's Republic of China
- Yiwu Research Institute of Fudan University, Yiwu 322000, Zhejiang, People's Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People's Republic of China
| | - Gaoshan Huang
- Department of Materials Science & State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai 200438, People's Republic of China
- Yiwu Research Institute of Fudan University, Yiwu 322000, Zhejiang, People's Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People's Republic of China
| | - Yongfeng Mei
- Department of Materials Science & State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai 200438, People's Republic of China
- Yiwu Research Institute of Fudan University, Yiwu 322000, Zhejiang, People's Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People's Republic of China
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Garcia-de-los-Rios VM, Arano-Martinez JA, Trejo-Valdez M, Vidales-Hurtado MA, Gallegos-García G, Torres-Torres C. Dual-Criteria Decision Analysis by Multiphotonic Effects in Nanostructured ZnO. MICROMACHINES 2024; 15:579. [PMID: 38793152 PMCID: PMC11122908 DOI: 10.3390/mi15050579] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/01/2024] [Revised: 04/21/2024] [Accepted: 04/24/2024] [Indexed: 05/26/2024]
Abstract
Simultaneous interrogation of pump and probe beams interacting in ZnO nanostructures of a two-wave mixing is proposed for dual-path data processing of optical signals by nonlinear optical effects. An enhancement in third-order nonlinear optical properties was exhibited by Al-doped ZnO thin films. Multiphoton absorption and nonlinear refraction were explored by the z-scan technique at 532 nm with nanosecond pulses. The evolution of the optical Kerr effect in the ZnO thin films was analyzed as a function of the incorporation of Al in the sample by a vectorial two-wave mixing method. Electrical and photoconductive effects were evaluated to further characterize the influence of Al in the ZnO solid samples. Potential applications of nonlinear optical parameters for encoding and encrypting information in light can be envisioned.
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Affiliation(s)
- Victor Manuel Garcia-de-los-Rios
- Sección de Estudios de Posgrado e Investigación, Escuela Superior de Ingeniería Mecánica y Eléctrica Unidad Zacatenco, Instituto Politécnico Nacional, Mexico City 07738, Mexico
| | - Jose Alberto Arano-Martinez
- Sección de Estudios de Posgrado e Investigación, Escuela Superior de Ingeniería Mecánica y Eléctrica Unidad Zacatenco, Instituto Politécnico Nacional, Mexico City 07738, Mexico
| | - Martin Trejo-Valdez
- Escuela Superior de Ingeniería Química e Industrias Extractivas, Instituto Politécnico Nacional, Mexico City 07738, Mexico
| | - Mónica Araceli Vidales-Hurtado
- Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada Unidad Querétaro, Instituto Politécnico Nacional, Santiago de Querétaro 76090, Mexico
| | - Gina Gallegos-García
- Centro de Investigación en Computación, Instituto Politécnico Nacional, Mexico City 07738, Mexico;
| | - Carlos Torres-Torres
- Sección de Estudios de Posgrado e Investigación, Escuela Superior de Ingeniería Mecánica y Eléctrica Unidad Zacatenco, Instituto Politécnico Nacional, Mexico City 07738, Mexico
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Nath S, Bhuiyan A. Optical characterization and dispersion analyses of plasma polymerized methyl acrylate thin films. Heliyon 2024; 10:e28777. [PMID: 38586384 PMCID: PMC10998145 DOI: 10.1016/j.heliyon.2024.e28777] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/13/2023] [Revised: 03/22/2024] [Accepted: 03/25/2024] [Indexed: 04/09/2024] Open
Abstract
This work reports the structural characteristics, surface morphology, linear and nonlinear optical properties of 110 to 225 nm thick plasma polymerized methyl acrylate (PPMA) thin films. X-ray diffraction analyses confirm the amorphous nature of the films. Field emission scanning electron micrographs of the films display cluster-based surface morphology. Attenuated total reflectance Fourier transform infrared spectroscopy confirms the chemical structural changes in the films. The optical properties were studied based on the absorbance, transmittance, and reflectance spectra measured by an ultraviolet-visible spectrophotometer within the wavelength ranges from 200 to 800 nm. The direct optical band gap and Urbach values are increased from 3.66 to 3.83 eV and 0.28 to 0.45 eV, respectively with increasing film thickness. The extinction coefficient and refractive index were evaluated, and discussed a correlation between the refractive index and the optical bandgap. The real and imaginary dielectric constants, volume/surface energy loss functions and skin depth were deduced. The oscillator energies and parameters were analyzed using the concept of Wemple-DiDomenico and Sellmeier models, respectively for a single oscillator. Static linear refractive index for the studied films exhibits normal dispersion behavior with film thicknesses and satisfied Moss, Ravindra-Gupta, and Herve-Vandamme rules. The linear susceptibility, third-order nonlinear susceptibility and the non-linear refractive index are considerably reduced from 0.20, 29.5 × 10-14 esu, and 5.89 × 10-12 esu with increasing optical band gap energies. The outcomes from the analyses of PPMA demonstrated their potential for usage in electronic, optoelectronic, and non-linear device applications.
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Affiliation(s)
- S.D. Nath
- Department of Physics, Khulna University of Engineering & Technology (KUET), Khulna 9203, Bangladesh
- Department of Physics, Bangladesh University of Engineering and Technology (BUET), Dhaka 1000, Bangladesh
| | - A.H. Bhuiyan
- Department of Physics, Bangladesh University of Engineering and Technology (BUET), Dhaka 1000, Bangladesh
- University of Information Technology and Sciences, Baridhara, Dhaka-1212, Bangladesh
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Mazur M, Kiliszkiewicz M, Posadowski W, Domaradzki J, Małachowska A, Sokołowski P. A Comprehensive Investigation of the Mechanical and Tribological Properties of AZO Transparent Conducting Oxide Thin Films Deposited by Medium Frequency Magnetron Sputtering. MATERIALS (BASEL, SWITZERLAND) 2023; 17:81. [PMID: 38203938 PMCID: PMC10779917 DOI: 10.3390/ma17010081] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/20/2023] [Revised: 12/19/2023] [Accepted: 12/20/2023] [Indexed: 01/12/2024]
Abstract
This paper presents a detailed analysis of aluminium-doped zinc oxide (AZO) thin films and considers them a promising alternative to indium tin oxide in transparent electrodes. The study focusses on critical properties of AZO, including optical, electrical, and mechanical properties, with potential applications in displays, photovoltaic cells, and protective coatings. The deposited AZO thin films are characterised by excellent optical and electrical parameters, with transparency in the visible light range exceeding 80% and resistivity of 10-3 Ω·cm, which gives a high value of figure of merit of 63. Structural analysis confirms the nanocrystalline nature of as-deposited AZO thin films, featuring hexagonal ZnO, orthorhombic Al2O3, and cubic Al2ZnO4 phases. The study includes nanoindentation measurements, which reveal exceptional hardness (11.4 GPa) and reduced elastic modulus (98 GPa), exceeding typical values reported in the literature, highlighting their protective potential. Abrasion tests have shown extraordinary scratch resistance due to the lack of impact on topography and surface roughness up to 10,000 cycles. This comprehensive study demonstrated that as-deposited AZO thin films are multifunctional materials with exceptional optical, electrical, and mechanical properties. The findings open up possibilities for a variety of applications, especially in protective coatings, where the combination of hardness, scratch resistance, and transparency is both rare and valuable.
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Affiliation(s)
- Michał Mazur
- Faculty of Electronics, Photonics and Microsystems, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wroclaw, Poland; (M.M.); (M.K.); (W.P.)
| | - Milena Kiliszkiewicz
- Faculty of Electronics, Photonics and Microsystems, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wroclaw, Poland; (M.M.); (M.K.); (W.P.)
| | - Witold Posadowski
- Faculty of Electronics, Photonics and Microsystems, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wroclaw, Poland; (M.M.); (M.K.); (W.P.)
| | - Jarosław Domaradzki
- Faculty of Electronics, Photonics and Microsystems, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wroclaw, Poland; (M.M.); (M.K.); (W.P.)
| | - Aleksandra Małachowska
- Faculty of Mechanical Engineering, Wrocław University of Science and Technology, Lukasiewicza 5, 50-371 Wroclaw, Poland; (A.M.); (P.S.)
| | - Paweł Sokołowski
- Faculty of Mechanical Engineering, Wrocław University of Science and Technology, Lukasiewicza 5, 50-371 Wroclaw, Poland; (A.M.); (P.S.)
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