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Zaman A, Alsolami A, Wei M, Rivera I, Baghelani M, Wang J. Lateral Extensional Mode Piezoelectric ZnO-on-Nickel RF MEMS Resonators for Back-End-of-Line Integration. MICROMACHINES 2023; 14:mi14051089. [PMID: 37241712 DOI: 10.3390/mi14051089] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2023] [Revised: 05/15/2023] [Accepted: 05/18/2023] [Indexed: 05/28/2023]
Abstract
High motional resistance and incompatibility with post-CMOS fabrication due to thermal budget constraints are imperative issues associated with the back-end-of-line integration of lateral extensional vibrating micromechanical resonators. This paper presents piezoelectric ZnO-on-nickel resonators as a viable means for mitigating both of the issues. Lateral extensional mode resonators equipped with thin-film piezoelectric transducers can exhibit much lower motional impedances than their capacitive counterparts due to piezo-transducers' higher electromechanical coupling coefficients. Meanwhile, the employment of electroplated nickel as the structural material allows the process temperature to be kept lower than 300 °C, which is low enough for the post-CMOS resonator fabrication. In this work, various geometrical rectangular and square plates resonators are investigated. Moreover, parallel combination of several resonators into a mechanically coupled array was explored as a systematic approach to lower motional resistance from ~1 kΩs to 0.562 kΩs. Higher order modes were investigated for achieving higher resonance frequencies up to 1.57 GHz. Local annealing by Joule heating was also exploited for quality factor improvement after device fabrication by ~2× enhancement and breaking the record of MEMS electroplated nickel resonators in lowering insertion loss to ~10 dB.
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Affiliation(s)
- Adnan Zaman
- King Abdulaziz City for Science and Technology, Riyadh 11442, Saudi Arabia
| | | | - Mian Wei
- Department of Electrical Engineering, College of Engineering, University of South Florida, Tampa, FL 33620, USA
| | - Ivan Rivera
- Department of Electrical Engineering, College of Engineering, University of South Florida, Tampa, FL 33620, USA
| | - Masoud Baghelani
- Electrical & Computer Engineering Department, College of Engineering, University of Alberta, Edmonton, AB T6G 2R3, Canada
| | - Jing Wang
- Department of Electrical Engineering, College of Engineering, University of South Florida, Tampa, FL 33620, USA
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Jung SI, Jang IR, Ryu C, Park J, Padhan AM, Kim HJ. Graphene oxide decorated multi-frequency surface acoustic wave humidity sensor for hygienic applications. Sci Rep 2023; 13:6838. [PMID: 37100930 PMCID: PMC10133308 DOI: 10.1038/s41598-023-34099-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/18/2022] [Accepted: 04/24/2023] [Indexed: 04/28/2023] Open
Abstract
This work presents the single-chip integration of a multi-frequency surface acoustic wave resonator (SAWR) based humidity sensor. Graphene oxide (GO), a humidity-sensing material, is integrated onto a confined sensing area of SAWR via electrospray deposition (ESD). The ESD method allows ng-resolution deposition of GO, optimizing the amount of sensing material. The proposed sensor consists of SWARs at three different resonant frequencies (180, 200 and 250 MHz) with a shared common sensing region, thus allowing direct analysis of sensor performances at different operating frequencies. Our findings reveal that the resonant frequency of the sensor impacts both measurement sensitivity and stability. A higher operating frequency ensures better sensitivity but suffers from a larger damping effect from absorbed water molecules. The maximum measurement sensitivity of 17.4 ppm/RH% is achieved with low drift. In addition, the developed sensor exhibits improved stability and sensitivity by as much as 150% and 75% in frequency shift and Quality factor (Q), respectively, by carefully selecting the operating frequencies at a given RH% range. Finally, the sensors are used for various hygienic applications, such as non-contact proximity detection and face mask inspection.
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Affiliation(s)
- Soon In Jung
- Department of Robotics and Mechatronics Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Korea
| | - Il Ryu Jang
- Department of Robotics and Mechatronics Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Korea
| | - Chaehyun Ryu
- Department of Robotics and Mechatronics Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Korea
| | - Jeonhyeong Park
- Department of Robotics and Mechatronics Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Korea
| | - Aneeta Manjari Padhan
- Department of Robotics and Mechatronics Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Korea
| | - Hoe Joon Kim
- Department of Robotics and Mechatronics Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Korea.
- Robotics and Mechatronics Research Center, DGIST, Daegu, 42988, Korea.
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Ba Hashwan SS, Khir MHM, Nawi IM, Ahmad MR, Hanif M, Zahoor F, Al-Douri Y, Algamili AS, Bature UI, Alabsi SS, Sabbea MOB, Junaid M. A review of piezoelectric MEMS sensors and actuators for gas detection application. NANOSCALE RESEARCH LETTERS 2023; 18:25. [PMID: 36847870 DOI: 10.1186/s11671-023-03779-8] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/17/2022] [Accepted: 01/25/2023] [Indexed: 05/24/2023]
Abstract
Piezoelectric microelectromechanical system (piezo-MEMS)-based mass sensors including the piezoelectric microcantilevers, surface acoustic waves (SAW), quartz crystal microbalance (QCM), piezoelectric micromachined ultrasonic transducer (PMUT), and film bulk acoustic wave resonators (FBAR) are highlighted as suitable candidates for highly sensitive gas detection application. This paper presents the piezo-MEMS gas sensors' characteristics such as their miniaturized structure, the capability of integration with readout circuit, and fabrication feasibility using multiuser technologies. The development of the piezoelectric MEMS gas sensors is investigated for the application of low-level concentration gas molecules detection. In this work, the various types of gas sensors based on piezoelectricity are investigated extensively including their operating principle, besides their material parameters as well as the critical design parameters, the device structures, and their sensing materials including the polymers, carbon, metal-organic framework, and graphene.
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Affiliation(s)
- Saeed S Ba Hashwan
- Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, 32610, Seri Iskandar, Malaysia.
| | - Mohd Haris Md Khir
- Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, 32610, Seri Iskandar, Malaysia
| | - Illani Mohd Nawi
- Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, 32610, Seri Iskandar, Malaysia
| | - Mohamad Radzi Ahmad
- Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, 32610, Seri Iskandar, Malaysia
| | - Mehwish Hanif
- Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, 32610, Seri Iskandar, Malaysia
| | - Furqan Zahoor
- Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, 32610, Seri Iskandar, Malaysia
| | - Y Al-Douri
- Nanotechnology and Catalysis Research Centre (NANOCAT), University of Malaya, Kuala Lumpur, Malaysia
- Department of Mechanical Engineering, Faculty of Engineering, Piri Reis University, Eflatun Sk. No: 8, 34940, Tuzla, Istanbul, Turkey
- Department of Applied Science and Astronomy, College of Sciences, University of Sharjah, Sharjah, United Arab Emirates
| | - Abdullah Saleh Algamili
- Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, 32610, Seri Iskandar, Malaysia
| | - Usman Isyaku Bature
- Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, 32610, Seri Iskandar, Malaysia
| | - Sami Sultan Alabsi
- Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, 32610, Seri Iskandar, Malaysia
| | - Mohammed O Ba Sabbea
- Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, ON, N2L 3G1, Canada
| | - Muhammad Junaid
- Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, 32610, Seri Iskandar, Malaysia
- Department of Electronic Engineering, Balochistan University of Information Technology, Engineering and Management Sciences, Quetta, 87300, Pakistan
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Luo Z, Shao S, Wu T. Al 0.78Sc 0.22N Lamb Wave Contour Mode Resonators. IEEE TRANSACTIONS ON ULTRASONICS, FERROELECTRICS, AND FREQUENCY CONTROL 2022; 69:3108-3116. [PMID: 34914586 DOI: 10.1109/tuffc.2021.3136337] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
This article presents the lamb wave contour mode resonators (CMRs) based on 22% aluminum scandium nitride (AlScN) thin film with λ of 12-24 [Formula: see text], and operating in [Formula: see text] mode. We report the design, fabrication, and characterization of 500 nm-thick AlScN CMRs, which take advantage of optimized stress control of co-sputtered AlScN thin films and vertical inductively coupled plasma (ICP) etching profile. The experimental results are compared to theoretical predictions by finite element analysis (FEA). All Al 0.78 Sc [Formula: see text] devices show excellent agreement with simulations in piezoelectric coupling using modified AlScN film parameters. The best Al 0.78 Sc [Formula: see text] CMR has achieved an electromechanical coupling coefficient ( kt2) of 5.24% and loaded quality factor ( Q ) of 1219 with an operating frequency at approximately 300 MHz, which exhibits a high Figure-of-Merit (FoM) of 63.88 in piezoelectric microelectromechanical system (MEMS) lamb wave CMR. This article also presents the co-sputtering characteristics of the AlScN thin films under [Formula: see text] gas to achieve low-stress and high-quality piezoelectric materials, and the etching optimization of high concentration Sc doping aluminum nitride (AlN) thin films under Cl2/BCl3/Ar chemistry to obtain record profile angle of 77°, high selectivity of 1:1 with SiO2 hard mask.
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Jang IR, Jung SI, Lee G, Park I, Kim SB, Kim HJ. Quartz crystal microbalance with thermally-controlled surface adhesion for an efficient fine dust collection and sensing. JOURNAL OF HAZARDOUS MATERIALS 2022; 424:127560. [PMID: 34879536 DOI: 10.1016/j.jhazmat.2021.127560] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2021] [Revised: 10/14/2021] [Accepted: 10/18/2021] [Indexed: 06/13/2023]
Abstract
The mass concentration of fine dust or particles acts as a standard measure to express the severity of air pollution. In connection with this, many related sensor technologies have been suggested for both indoor and outdoor uses. Among several technologies, the direct measurement of the dust mass using resonant platforms is the most preferable as it possesses multiple advantages including high sensitivity, low limit of detection, and a rapid response time. Such sensor performances directly rely on the adhesion quality between the sensor substrate and dust. In this work, we introduce a thermally controlled dust capturing scheme by integrating a polystyrene (PS) layer and microheater on quartz crystal microbalance (QCM). The Pt microheater can rapidly heat the sensor up to 100 °C, allowing a controlled switching between the soft and hard conditions of the PS film at a rapid rate. When the film is soft, the sensor can capture dust particle efficiently and we can calibrate the attached particle mass by measuring the resonance response. Compared to a bare QCM, our sensor used in this study exhibits 11 times larger detectable mass range. In addition, heated QCMs show a performance that is comparable to a high-cost particle sensing equipment such as an aerodynamic particle sizer and optical particle counter.
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Affiliation(s)
- Il Ryu Jang
- Department of Robotics Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 41988, Republic of Korea.
| | - Soon In Jung
- Department of Robotics Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 41988, Republic of Korea.
| | - Gunhee Lee
- Department of Environmental Machinery, Environmental System Research Division, Korea Institute of Machinery and Materials (KIMM), Daejeon 34103, Republic of Korea.
| | - Inyong Park
- Department of Environmental Machinery, Environmental System Research Division, Korea Institute of Machinery and Materials (KIMM), Daejeon 34103, Republic of Korea.
| | - Sang Bok Kim
- Department of Environmental Machinery, Environmental System Research Division, Korea Institute of Machinery and Materials (KIMM), Daejeon 34103, Republic of Korea.
| | - Hoe Joon Kim
- Department of Robotics Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 41988, Republic of Korea.
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Fei S, Ren H. Temperature Characteristics of a Contour Mode MEMS AlN Piezoelectric Ring Resonator on SOI Substrate. MICROMACHINES 2021; 12:mi12020143. [PMID: 33572931 PMCID: PMC7910928 DOI: 10.3390/mi12020143] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/02/2021] [Revised: 01/21/2021] [Accepted: 01/25/2021] [Indexed: 11/29/2022]
Abstract
As a result of their IC compatibility, high acoustic velocity, and high thermal conductivity, aluminum nitride (AlN) resonators have been studied extensively over the past two decades, and widely implemented for radio frequency (RF) and sensing applications. However, the temperature coefficient of frequency (TCF) of AlN is −25 ppm/°C, which is high and limits its RF and sensing application. In contrast, the TCF of heavily doped silicon is significantly lower than the TCF of AlN. As a result, this study uses an AlN contour mode ring type resonator with heavily doped silicon as its bottom electrode in order to reduce the TCF of an AlN resonator. A simple microfabrication process based on Silicon-on-Insulator (SOI) is presented. A thickness ratio of 20:1 was chosen for the silicon bottom electrode to the AlN layer in order to make the TCF of the resonator mainly dependent upon heavily doped silicon. A cryogenic cooling test down to 77 K and heating test up to 400 K showed that the resonant frequency of the AlN resonator changed linearly with temperature change; the TCF was shown to be −9.1 ppm/°C. The temperature hysteresis characteristic of the resonator was also measured, and the AlN resonator showed excellent temperature stability. The quality factor versus temperature characteristic was also studied between 77 K and 400 K. It was found that lower temperature resulted in a higher quality factor, and the quality factor increased by 56.43%, from 1291.4 at 300 K to 2020.2 at 77 K.
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Affiliation(s)
- Sitao Fei
- School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China;
- Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hao Ren
- School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China;
- Correspondence:
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