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Liao L, Kovalska E, Regner J, Song Q, Sofer Z. Two-Dimensional Van Der Waals Thin Film and Device. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2303638. [PMID: 37731156 DOI: 10.1002/smll.202303638] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/30/2023] [Revised: 08/07/2023] [Indexed: 09/22/2023]
Abstract
In the rapidly evolving field of thin-film electronics, the emergence of large-area flexible and wearable devices has been a significant milestone. Although organic semiconductor thin films, which can be manufactured through solution processing, have been identified, their utility is often undermined by their poor stability and low carrier mobility under ambient conditions. However, inorganic nanomaterials can be solution-processed and demonstrate outstanding intrinsic properties and structural stability. In particular, a series of two-dimensional (2D) nanosheet/nanoparticle materials have been shown to form stable colloids in their respective solvents. However, the integration of these 2D nanomaterials into continuous large-area thin with precise control of layer thickness and lattice orientation still remains a significant challenge. This review paper undertakes a detailed analysis of van der Waals thin films, derived from 2D materials, in the advancement of thin-film electronics and optoelectronic devices. The superior intrinsic properties and structural stability of inorganic nanomaterials are highlighted, which can be solution-processed and underscor the importance of solution-based processing, establishing it as a cornerstone strategy for scalable electronic and optoelectronic applications. A comprehensive exploration of the challenges and opportunities associated with the utilization of 2D materials for the next generation of thin-film electronics and optoelectronic devices is presented.
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Affiliation(s)
- Liping Liao
- Department of Inorganic Chemistry, University of Chemistry and Technology, Technicka 5, Prague, 166 28, Czech Republic
| | - Evgeniya Kovalska
- Faculty of Environment, Science and Economy, Department of Engineering, Exeter, EX4 4QF, UK
| | - Jakub Regner
- Department of Inorganic Chemistry, University of Chemistry and Technology, Technicka 5, Prague, 166 28, Czech Republic
| | - Qunliang Song
- School of Materials and Energy, Southwest University, Chongqing, 400715, P. R. China
| | - Zdeněk Sofer
- Department of Inorganic Chemistry, University of Chemistry and Technology, Technicka 5, Prague, 166 28, Czech Republic
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Wang H, Xu M, Ji H, He T, Li W, Zheng L, Wang X. Laser-assisted synthesis of two-dimensional transition metal dichalcogenides: a mini review. Front Chem 2023; 11:1195640. [PMID: 37179783 PMCID: PMC10167011 DOI: 10.3389/fchem.2023.1195640] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2023] [Accepted: 04/10/2023] [Indexed: 05/15/2023] Open
Abstract
The atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted the researcher's interest in the field of flexible electronics due to their high mobility, tunable bandgaps, and mechanical flexibility. As an emerging technique, laser-assisted direct writing has been used for the synthesis of TMDCs due to its extremely high preparation accuracy, rich light-matter interaction mechanism, dynamic properties, fast preparation speed, and minimal thermal effects. Currently, this technology has been focused on the synthesis of 2D graphene, while there are few literatures that summarize the progress in direct laser writing technology in the synthesis of 2D TMDCs. Therefore, in this mini-review, the synthetic strategies of applying laser to the fabrication of 2D TMDCs have been briefly summarized and discussed, which are divided into top-down and bottom-up methods. The detailed fabrication steps, main characteristics, and mechanism of both methods are discussed. Finally, prospects and further opportunities in the booming field of laser-assisted synthesis of 2D TMDCs are addressed.
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Affiliation(s)
- Hanxin Wang
- Frontiers Science Center for Flexible Electronics (FSCFE), Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi’an, China
| | - Manzhang Xu
- Frontiers Science Center for Flexible Electronics (FSCFE), Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi’an, China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi’an, China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi’an, China
| | - Hongjia Ji
- Frontiers Science Center for Flexible Electronics (FSCFE), Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi’an, China
| | - Tong He
- Institute of Basic and Translational Medicine, Xi’an Medical University, Xi’an, China
- School of Chemistry and Chemical Engineering, Shaanxi Normal University, Xi’an, China
| | - Weiwei Li
- Frontiers Science Center for Flexible Electronics (FSCFE), Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi’an, China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi’an, China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi’an, China
| | - Lu Zheng
- Frontiers Science Center for Flexible Electronics (FSCFE), Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi’an, China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi’an, China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi’an, China
| | - Xuewen Wang
- Frontiers Science Center for Flexible Electronics (FSCFE), Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi’an, China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi’an, China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi’an, China
- Key Laboratory of Flexible Electronics of Zhejiang Province, Ningbo Institute of Northwestern Polytechnical University, Ningbo, China
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Reato E, Palacios P, Uzlu B, Saeed M, Grundmann A, Wang Z, Schneider DS, Wang Z, Heuken M, Kalisch H, Vescan A, Radenovic A, Kis A, Neumaier D, Negra R, Lemme MC. Zero-Bias Power-Detector Circuits based on MoS 2 Field-Effect Transistors on Wafer-Scale Flexible Substrates. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108469. [PMID: 35075681 DOI: 10.1002/adma.202108469] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/21/2021] [Revised: 01/21/2022] [Indexed: 06/14/2023]
Abstract
The design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on 2D MoS2 field-effect transistors (FETs) are demonstrated. The MoS2 FETs are fabricated using a wafer-scale process on 8 μm-thick polyimide film, which, in principle, serves as a flexible substrate. The performances of two chemical vapor deposition MoS2 sheets, grown with different processes and showing different thicknesses, are analyzed and compared from the single device fabrication and characterization steps to the circuit level. The power-detector prototypes exploit the nonlinearity of the transistors above the cut-off frequency of the devices. The proposed detectors are designed employing a transistor model based on measurement results. The fabricated circuits operate in the Ku-band between 12 and 18 GHz, with a demonstrated voltage responsivity of 45 V W-1 at 18 GHz in the case of monolayer MoS2 and 104 V W-1 at 16 GHz in the case of multilayer MoS2 , both achieved without applied DC bias. They are the best-performing power detectors fabricated on flexible substrate reported to date. The measured dynamic range exceeds 30 dB, outperforming other semiconductor technologies like silicon complementary metal-oxide-semiconductor circuits and GaAs Schottky diodes.
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Affiliation(s)
- Eros Reato
- AMO GmbH, Otto-Blumenthal-Strasse 25, 52074, Aachen, Germany
- Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Strasse 25, 52074, Aachen, Germany
| | - Paula Palacios
- Chair of High Frequency Electronics, RWTH-Aachen University, Kopernikusstraße 16, 52074, Aachen, Germany
| | - Burkay Uzlu
- AMO GmbH, Otto-Blumenthal-Strasse 25, 52074, Aachen, Germany
- Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Strasse 25, 52074, Aachen, Germany
| | - Mohamed Saeed
- Chair of High Frequency Electronics, RWTH-Aachen University, Kopernikusstraße 16, 52074, Aachen, Germany
| | - Annika Grundmann
- Compound Semiconductor Technology, RWTH Aachen University, Sommerfeldstrasse 18, 52074, Aachen, Germany
| | - Zhenyu Wang
- School of Engineering, EPFL, BM 2141, Station 17, 1015, Lausanne, Switzerland
| | - Daniel S Schneider
- AMO GmbH, Otto-Blumenthal-Strasse 25, 52074, Aachen, Germany
- Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Strasse 25, 52074, Aachen, Germany
| | - Zhenxing Wang
- AMO GmbH, Otto-Blumenthal-Strasse 25, 52074, Aachen, Germany
| | - Michael Heuken
- Compound Semiconductor Technology, RWTH Aachen University, Sommerfeldstrasse 18, 52074, Aachen, Germany
- AIXTRON SE, Dornkaulstrasse 2, 52134, Herzogenrath, Germany
| | - Holger Kalisch
- Compound Semiconductor Technology, RWTH Aachen University, Sommerfeldstrasse 18, 52074, Aachen, Germany
| | - Andrei Vescan
- Compound Semiconductor Technology, RWTH Aachen University, Sommerfeldstrasse 18, 52074, Aachen, Germany
| | - Alexandra Radenovic
- School of Engineering, EPFL, BM 2141, Station 17, 1015, Lausanne, Switzerland
| | - Andras Kis
- School of Engineering, EPFL, BM 2141, Station 17, 1015, Lausanne, Switzerland
| | - Daniel Neumaier
- AMO GmbH, Otto-Blumenthal-Strasse 25, 52074, Aachen, Germany
- Bergische Universität Wuppertal, Lise-Meitner-Str. 13, 42 119, Wuppertal, Germany
| | - Renato Negra
- Chair of High Frequency Electronics, RWTH-Aachen University, Kopernikusstraße 16, 52074, Aachen, Germany
| | - Max C Lemme
- AMO GmbH, Otto-Blumenthal-Strasse 25, 52074, Aachen, Germany
- Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Strasse 25, 52074, Aachen, Germany
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Wang C, Song Y, Huang H. Evolution Application of Two-Dimensional MoS 2-Based Field-Effect Transistors. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:nano12183233. [PMID: 36145022 PMCID: PMC9504544 DOI: 10.3390/nano12183233] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/21/2022] [Revised: 09/12/2022] [Accepted: 09/15/2022] [Indexed: 06/12/2023]
Abstract
High-performance and low-power field-effect transistors (FETs) are the basis of integrated circuit fields, which undoubtedly require researchers to find better film channel layer materials and improve device structure technology. MoS2 has recently shown a special two-dimensional (2D) structure and superior photoelectric performance, and it has shown new potential for next-generation electronics. However, the natural atomic layer thickness and large specific surface area of MoS2 make the contact interface and dielectric interface have a great influence on the performance of MoS2 FET. Thus, we focus on its main performance improvement strategies, including optimizing the contact behavior, regulating the conductive channel, and rationalizing the dielectric layer. On this basis, we summarize the applications of 2D MoS2 FETs in key and emerging fields, specifically involving logic, RF circuits, optoelectronic devices, biosensors, piezoelectric devices, and synaptic transistors. As a whole, we discuss the state-of-the-art, key merits, and limitations of each of these 2D MoS2-based FET systems, and prospects in the future.
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Affiliation(s)
- Chunlan Wang
- School of Science, Xi’an Polytechnic University, Xi’an 710048, China
| | - Yongle Song
- School of Science, Xi’an Polytechnic University, Xi’an 710048, China
| | - Hao Huang
- Guangxi Key Laboratory of Processing for Nonferrous Metals and Featured Material, School of Resources, Environment and Materials, Guangxi University, Nanning 530004, China
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Gao Q, Chen L, Chen S, Zhang Z, Yang J, Pan X, Yi Z, Liu L, Chi F, Liu P, Zhang C. NaCl-Assisted Chemical Vapor Deposition of Large-Domain Bilayer MoS 2 on Soda-Lime Glass. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:2913. [PMID: 36079950 PMCID: PMC9457956 DOI: 10.3390/nano12172913] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/06/2022] [Revised: 08/19/2022] [Accepted: 08/20/2022] [Indexed: 06/15/2023]
Abstract
In recent years, two-dimensional molybdenum disulfide (MoS2) has attracted extensive attention in the application field of next-generation electronics. Compared with single-layer MoS2, bilayer MoS2 has higher carrier mobility and has more promising applications for future novel electronic devices. Nevertheless, the large-scale low-cost synthesis of high-quality bilayer MoS2 still has much room for exploration, requiring further research. In this study, bilayer MoS2 crystals grown on soda-lime glass substrate by sodium chloride (NaCl)-assisted chemical vapor deposition (CVD) were reported, the growth mechanism of NaCl in CVD of bilayer MoS2 was analyzed, and the effects of molybdenum trioxide (Mo) mass and growth pressure on the growth of bilayer MoS2 under the assistance of NaCl were further explored. Through characterization with an optical microscope, atomic force microscopy and Raman analyzer, the domain size of bilayer MoS2 prepared by NaCl-assisted CVD was shown to reach 214 μm, which is a 4.2X improvement of the domain size of bilayer MoS2 prepared without NaCl-assisted CVD. Moreover, the bilayer structure accounted for about 85%, which is a 2.1X improvement of bilayer MoS2 prepared without NaCl-assisted CVD. This study provides a meaningful method for the growth of high-quality bilayer MoS2, and promotes the large-scale and low-cost applications of CVD MoS2.
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Affiliation(s)
- Qingguo Gao
- School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China
| | - Lvcheng Chen
- School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China
| | - Simin Chen
- School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China
| | - Zhi Zhang
- School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China
| | - Jianjun Yang
- School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China
| | - Xinjian Pan
- School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China
| | - Zichuan Yi
- School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China
| | - Liming Liu
- School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China
| | - Feng Chi
- School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China
| | - Ping Liu
- School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China
| | - Chongfu Zhang
- School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China
- School of Information and Communication Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
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Gao Q, Lu J, Chen S, Chen L, Xu Z, Lin D, Xu S, Liu P, Zhang X, Cai W, Zhang C. Chemical Vapor Deposition of Uniform and Large-Domain Molybdenum Disulfide Crystals on Glass/Al 2O 3 Substrates. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:2719. [PMID: 35957148 PMCID: PMC9370393 DOI: 10.3390/nano12152719] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/22/2022] [Revised: 08/01/2022] [Accepted: 08/03/2022] [Indexed: 06/15/2023]
Abstract
Two-dimensional molybdenum disulfide (MoS2) has attracted significant attention for next-generation electronics, flexible devices, and optical applications. Chemical vapor deposition is the most promising route for the production of large-scale, high-quality MoS2 films. Recently, the chemical vapor deposition of MoS2 films on soda-lime glass has attracted great attention due to its low cost, fast growth, and large domain size. Typically, a piece of Mo foil or graphite needs to be used as a buffer layer between the glass substrates and the CVD system to prevent the glass substrates from being fragmented. In this study, a novel method was developed for synthesizing MoS2 on glass substrates. Inert Al2O3 was used as the buffer layer and high-quality, uniform, triangular monolayer MoS2 crystals with domain sizes larger than 400 μm were obtained. To demonstrate the advantages of glass/Al2O3 substrates, a direct comparison of CVD MoS2 on glass/Mo and glass/Al2O3 substrates was performed. When Mo foil was used as the buffer layer, serried small bilayer islands and bright core centers could be observed on the MoS2 domains at the center and edges of glass substrates. As a control, uniform MoS2 crystals were obtained when Al2O3 was used as the buffer layer, both at the center and the edge of glass substrates. Raman and PL spectra were further characterized to show the merit of glass/Al2O3 substrates. In addition, the thickness of MoS2 domains was confirmed by an atomic force microscope and the uniformity of MoS2 domains was verified by Raman mapping. This work provides a novel method for CVD MoS2 growth on soda-lime glass and is helpful in realizing commercial applications of MoS2.
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Affiliation(s)
- Qingguo Gao
- School of Electronic Information, University of Electronic Science and Technology of China Zhongshan Institute, Zhongshan 528402, China
| | - Jie Lu
- College of Physical Science and Technology, Xiamen University, Xiamen 361005, China
| | - Simin Chen
- School of Electronic Information, University of Electronic Science and Technology of China Zhongshan Institute, Zhongshan 528402, China
| | - Lvcheng Chen
- School of Electronic Information, University of Electronic Science and Technology of China Zhongshan Institute, Zhongshan 528402, China
| | - Zhequan Xu
- School of Electronic Information, University of Electronic Science and Technology of China Zhongshan Institute, Zhongshan 528402, China
| | - Dexi Lin
- School of Electronic Information, University of Electronic Science and Technology of China Zhongshan Institute, Zhongshan 528402, China
| | - Songyi Xu
- School of Electronic Information, University of Electronic Science and Technology of China Zhongshan Institute, Zhongshan 528402, China
| | - Ping Liu
- School of Electronic Information, University of Electronic Science and Technology of China Zhongshan Institute, Zhongshan 528402, China
| | - Xueao Zhang
- College of Physical Science and Technology, Xiamen University, Xiamen 361005, China
| | - Weiwei Cai
- College of Physical Science and Technology, Xiamen University, Xiamen 361005, China
| | - Chongfu Zhang
- School of Electronic Information, University of Electronic Science and Technology of China Zhongshan Institute, Zhongshan 528402, China
- School of Information and Communication Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
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Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS 2 Transistors. NANOMATERIALS 2021; 11:nano11061594. [PMID: 34204492 PMCID: PMC8235638 DOI: 10.3390/nano11061594] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/30/2021] [Revised: 06/14/2021] [Accepted: 06/15/2021] [Indexed: 11/17/2022]
Abstract
As an atomically thin semiconductor, 2D molybdenum disulfide (MoS2) has demonstrated great potential in realizing next-generation logic circuits, radio-frequency (RF) devices and flexible electronics. Although various methods have been performed to improve the high-frequency characteristics of MoS2 RF transistors, the impact of the back-gate bias on dual-gate MoS2 RF transistors is still unexplored. In this work, we study the effect of back-gate control on the static and RF performance metrics of MoS2 high-frequency transistors. By using high-quality chemical vapor deposited bilayer MoS2 as channel material, high-performance top-gate transistors with on/off ratio of 107 and on-current up to 179 μA/μm at room temperature were realized. With the back-gate modulation, the source and drain contact resistances decrease to 1.99 kΩ∙μm at Vbg = 3 V, and the corresponding on-current increases to 278 μA/μm. Furthermore, both cut-off frequency and maximum oscillation frequency improves as the back-gate voltage increases to 3 V. In addition, a maximum intrinsic fmax of 29.7 GHz was achieved, which is as high as 2.1 times the fmax without the back-gate bias. This work provides significant insights into the influence of back-gate voltage on MoS2 RF transistors and presents the potential of dual-gate MoS2 RF transistors for future high-frequency applications.
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