Review-Hysteresis in Carbon Nano-Structure Field Effect Transistor

Electrostatic steering of thermal emission with active metasurface control of delocalized modes

We theoretically describe and experimentally demonstrate a graphene-integrated metasurface structure that enables electrically-tunable directional control of thermal emission. This device consists of a dielectric spacer that acts as a Fabry-Perot resonator supporting long-range delocalized modes bounded on one side by an electrostatically tunable metal-graphene metasurface. By varying the Fermi level of the graphene, the accumulated phase of the Fabry-Perot mode is shifted, which changes the direction of absorption and emission at a fixed frequency. We directly measure the frequency- and angle-dependent emissivity of the thermal emission from a fabricated device heated to 250 °C. Our results show that electrostatic control allows the thermal emission at 6.61 μm to be continuously steered over 16°, with a peak emissivity maintained above 0.9. We analyze the dynamic behavior of the thermal emission steerer theoretically using a Fano interference model, and use the model to design optimized thermal steerer structures.

Printed n- and p-Channel Transistors using Silicon Nanoribbons Enduring Electrical, Thermal, and Mechanical Stress

Printing technologies are changing the face of electronics with features such as resource-efficiency, low-cost, and novel form factors. While significant advances have been made in terms of organic electronics, the high-performance and stable transistors by printing, and their large-scale integration leading to fast integrated circuits remains a major challenge. This is because of the difficulties to print high-mobility semiconducting materials and the lack of high-resolution printing techniques. Herein, we present silicon based printed n- and p-channel transistors to demonstrate the possibility of developing high-performance complementary metal-oxide-semiconductor (CMOS) computing architecture. The direct roll transfer printing is used here for deterministic assembly of high-mobility single crystal silicon nanoribbons arrays on a flexible polyimide substrate. This is followed by high-resolution electrohydrodynamic printing to define source/drain/gate electrodes and to encapsulate, thus leading to printed devices. The printed transistors show effective peak mobilities of 15 cm2/(V s) (n-channel) and 5 cm2/(V s) (p-channel) at low 1 V drain bias. Furthermore, the effect of electrical, mechanical, and thermal stress on the performance and stability of the encapsulated transistors is investigated. The transistors showed stable transfer characteristics even after: (i) continuous 4000 transfer cycles, (ii) excruciating 10000 bending cycles at different bending radii (40, 25, and 15 mm), and (iii) between 15 and 60 °C temperatures.

Ultrasensitive and Regenerative Transistor Sensor Based on Dynamic Covalent Chemistry

Field-effect transistor (FET) sensors require not only high sensitivity but also excellent regeneration ability before widespread applications are possible. Although some regenerative FETs have been reported, their lowest limit of detection (LoD) barely achieves 10^-15 mol L^-1. Here, we develop a graphene FET with a regenerative sensing interface based on dynamic covalent chemistry (DCvC). The LoD down to 5.0 × 10^-20 mol L^-1 remains even after 10 regenerative cycles, around 4-5 orders of magnitude lower than existing transistor sensors. Owing to its ultra-sensitivity, regeneration ability, and advantages such as simplicity, low cost, label-free and real-time response, the FET sensor based on DCvC is valuable in applications such as medical diagnosis, environment monitoring, etc.