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Demongodin P, El Dirani H, Kerdilès S, Lhuillier J, Wood T, Sciancalepore C, Monat C. Pulsed Four-Wave Mixing at Telecom Wavelengths in Si 3N 4 Waveguides Locally Covered by Graphene. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:451. [PMID: 36770412 PMCID: PMC9920485 DOI: 10.3390/nano13030451] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/15/2022] [Revised: 01/11/2023] [Accepted: 01/18/2023] [Indexed: 06/18/2023]
Abstract
Recently, the nonlinear optical response of graphene has been widely investigated, as has the integration of this 2D material onto dielectric waveguides so as to enhance the various nonlinear phenomena that underpin all-optical signal processing applications at telecom wavelengths. However, a great disparity continues to exist from these experimental reports, depending on the used conditions or the hybrid devices under test. Most importantly, hybrid graphene-based waveguides were tested under relatively low powers, and/or combined with waveguide materials that already exhibited a nonnegligible nonlinear contribution, thereby limiting the practical use of graphene for nonlinear applications. Here, we experimentally investigate the nonlinear response of Si3N4 waveguides that are locally covered by submillimeter-long graphene patches by means of pulsed degenerate four-wave mixing at telecom wavelength under 7 W peak powers. Our measurements and comparison with simulations allow us to estimate a local change of the nonlinearity sign as well as a moderate increase of the nonlinear waveguide parameter (γ∼-10 m-1W-1) provided by graphene. Our analysis also clarifies the tradeoff associated with the loss penalty and nonlinear benefit afforded by graphene patches integrated onto passive photonic circuits, thereby providing some guidelines for the design of hybrid integrated nonlinear devices, coated with graphene, or, more generally, any other 2D material.
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Affiliation(s)
- Pierre Demongodin
- Université de Lyon, Ecole Centrale de Lyon, INSA Lyon, Université Claude Bernard Lyon 1, CPE Lyon, CNRS, INL, UMR5270, 69130 Ecully, France
| | - Houssein El Dirani
- Université Grenoble-Alpes, CEA-LETI, 17 Avenue des Martyrs, 38054 Grenoble, France
| | - Sébastien Kerdilès
- Université Grenoble-Alpes, CEA-LETI, 17 Avenue des Martyrs, 38054 Grenoble, France
| | - Jérémy Lhuillier
- Université de Lyon, Ecole Centrale de Lyon, INSA Lyon, Université Claude Bernard Lyon 1, CPE Lyon, CNRS, INL, UMR5270, 69130 Ecully, France
| | - Thomas Wood
- Université de Lyon, Ecole Centrale de Lyon, INSA Lyon, Université Claude Bernard Lyon 1, CPE Lyon, CNRS, INL, UMR5270, 69130 Ecully, France
| | | | - Christelle Monat
- Université de Lyon, Ecole Centrale de Lyon, INSA Lyon, Université Claude Bernard Lyon 1, CPE Lyon, CNRS, INL, UMR5270, 69130 Ecully, France
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Wu J, Lin H, Moss DJ, Loh KP, Jia B. Graphene oxide for photonics, electronics and optoelectronics. Nat Rev Chem 2023; 7:162-183. [PMID: 37117900 DOI: 10.1038/s41570-022-00458-7] [Citation(s) in RCA: 21] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Accepted: 12/01/2022] [Indexed: 01/19/2023]
Abstract
Graphene oxide (GO) was initially developed to emulate graphene, but it was soon recognized as a functional material in its own right, addressing an application space that is not accessible to graphene and other carbon materials. Over the past decade, research on GO has made tremendous advances in material synthesis and property tailoring. These, in turn, have led to rapid progress in GO-based photonics, electronics and optoelectronics, paving the way for technological breakthroughs with exceptional performance. In this Review, we provide an overview of the optical, electrical and optoelectronic properties of GO and reduced GO on the basis of their chemical structures and fabrication approaches, together with their applications in key technologies such as solar energy harvesting, energy storage, medical diagnosis, image display and optical communications. We also discuss the challenges of this field, together with exciting opportunities for future technological advances.
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Photo-Thermal Tuning of Graphene Oxide Coated Integrated Optical Waveguides. MICROMACHINES 2022; 13:mi13081194. [PMID: 36014116 PMCID: PMC9416401 DOI: 10.3390/mi13081194] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/24/2022] [Revised: 07/25/2022] [Accepted: 07/26/2022] [Indexed: 12/07/2022]
Abstract
We experimentally investigate power-sensitive photo-thermal tuning (PTT) of two-dimensional (2D) graphene oxide (GO) films coated on integrated optical waveguides. We measure the light power thresholds for reversible and permanent GO reduction in silicon nitride (SiN) waveguides integrated with one and two layers of GO. For the device with one layer of GO, the power threshold for reversible and permanent GO reduction are ~20 and ~22 dBm, respectively. For the device with two layers of GO, the corresponding results are ~13 and ~18 dBm, respectively. Raman spectra at different positions of a hybrid waveguide with permanently reduced GO are characterized, verifying the inhomogeneous GO reduction along the direction of light propagation through the waveguide. The differences between the PTT induced by a continuous-wave laser and a pulsed laser are also compared, confirming that the PTT mainly depend on the average input power. These results reveal interesting features for 2D GO films coated on integrated optical waveguides, which are of fundamental importance for the control and engineering of GO’s properties in hybrid integrated photonic devices.
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