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Yu T, Li J, Han M, Zhang Y, Li H, Peng Q, Tang HK. Enhancing the Mechanical Stability of 2D Fullerene with a Graphene Substrate and Encapsulation. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1936. [PMID: 37446452 DOI: 10.3390/nano13131936] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2023] [Revised: 06/20/2023] [Accepted: 06/21/2023] [Indexed: 07/15/2023]
Abstract
Recent advancements have led to the synthesis of novel monolayer 2D carbon structures, namely quasi-hexagonal-phase fullerene (qHPC60) and quasi-tetragonal-phase fullerene (qTPC60). Particularly, qHPC60 exhibits a promising medium band gap of approximately 1.6 eV, making it an attractive candidate for semiconductor devices. In this study, we conducted comprehensive molecular dynamics simulations to investigate the mechanical stability of 2D fullerene when placed on a graphene substrate and encapsulated within it. Graphene, renowned for its exceptional tensile strength, was chosen as the substrate and encapsulation material. We compared the mechanical behaviors of qHPC60 and qTPC60, examined the influence of cracks on their mechanical properties, and analyzed the internal stress experienced during and after fracture. Our findings reveal that the mechanical reliability of 2D fullerene can be significantly improved by encapsulating it with graphene, particularly strengthening the cracked regions. The estimated elastic modulus increased from 191.6 (qHPC60) and 134.7 GPa (qTPC60) to 531.4 and 504.1 GPa, respectively. Moreover, we observed that defects on the C60 layer had a negligible impact on the deterioration of the mechanical properties. This research provides valuable insights into enhancing the mechanical properties of 2D fullerene through graphene substrates or encapsulation, thereby holding promising implications for future applications.
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Affiliation(s)
- Taotao Yu
- School of Science, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
- Shenzhen Key Laboratory of Advanced Functional Carbon Materials Research and Comprehensive Application, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
| | - Jianyu Li
- School of Science, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
- Shenzhen Key Laboratory of Advanced Functional Carbon Materials Research and Comprehensive Application, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
| | - Mingjun Han
- School of Science, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
- Shenzhen Key Laboratory of Advanced Functional Carbon Materials Research and Comprehensive Application, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
| | - Yinghe Zhang
- School of Science, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
- Shenzhen Key Laboratory of Advanced Functional Carbon Materials Research and Comprehensive Application, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
| | - Haipeng Li
- School of Materials Science and Physics, China University of Mining and Technology, Xuzhou 221116, China
| | - Qing Peng
- School of Science, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
- State Key Laboratory of Nonlinear Mechanics, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190, China
- School of Engineering Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Ho-Kin Tang
- School of Science, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
- Shenzhen Key Laboratory of Advanced Functional Carbon Materials Research and Comprehensive Application, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
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Canetta A, Gonzalez-Munoz S, Nguyen VH, Agarwal K, de Crombrugghe de Picquendaele P, Hong Y, Mohapatra S, Watanabe K, Taniguchi T, Nysten B, Hackens B, Ribeiro-Palau R, Charlier JC, Kolosov OV, Spièce J, Gehring P. Quantifying the local mechanical properties of twisted double bilayer graphene. NANOSCALE 2023; 15:8134-8140. [PMID: 36974920 DOI: 10.1039/d3nr00388d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Nanomechanical measurements of minimally twisted van der Waals materials remained elusive despite their fundamental importance for device realisation. Here, we use Ultrasonic Force Microscopy (UFM) to locally quantify the variation of out-of-plane Young's modulus in minimally twisted double bilayer graphene (TDBG). We reveal a softening of the Young's modulus by 7% and 17% along single and double domain walls, respectively. Our experimental results are confirmed by force-field relaxation models. This study highlights the strong tunability of nanomechanical properties in engineered twisted materials, and paves the way for future applications of designer 2D nanomechanical systems.
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Affiliation(s)
- Alessandra Canetta
- Institute of Condensed Matter and Nanosciences, Université catholique de Louvain (UCLouvain), 1348 Louvain-la-Neuve, Belgium.
| | | | - Viet-Hung Nguyen
- Institute of Condensed Matter and Nanosciences, Université catholique de Louvain (UCLouvain), 1348 Louvain-la-Neuve, Belgium.
| | | | | | - Yuanzhuo Hong
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies (C2N), 91120 Palaiseau, France
| | - Sambit Mohapatra
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies (C2N), 91120 Palaiseau, France
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Namiki 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Namiki 305-0044, Japan
| | - Bernard Nysten
- Institute of Condensed Matter and Nanosciences, Université catholique de Louvain (UCLouvain), 1348 Louvain-la-Neuve, Belgium.
| | - Benoît Hackens
- Institute of Condensed Matter and Nanosciences, Université catholique de Louvain (UCLouvain), 1348 Louvain-la-Neuve, Belgium.
| | - Rebeca Ribeiro-Palau
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies (C2N), 91120 Palaiseau, France
| | - Jean-Christophe Charlier
- Institute of Condensed Matter and Nanosciences, Université catholique de Louvain (UCLouvain), 1348 Louvain-la-Neuve, Belgium.
| | | | - Jean Spièce
- Institute of Condensed Matter and Nanosciences, Université catholique de Louvain (UCLouvain), 1348 Louvain-la-Neuve, Belgium.
| | - Pascal Gehring
- Institute of Condensed Matter and Nanosciences, Université catholique de Louvain (UCLouvain), 1348 Louvain-la-Neuve, Belgium.
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Urade AR, Lahiri I, Suresh KS. Graphene Properties, Synthesis and Applications: A Review. JOM (WARRENDALE, PA. : 1989) 2022; 75:614-630. [PMID: 36267692 PMCID: PMC9568937 DOI: 10.1007/s11837-022-05505-8] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/28/2022] [Accepted: 08/29/2022] [Indexed: 06/12/2023]
Abstract
We have evaluated some of the most recent breakthroughs in the synthesis and applications of graphene and graphene-based nanomaterials. This review includes three major categories. The first section consists of an overview of the structure and properties, including thermal, optical, and electrical transport. Recent developments in the synthesis techniques are elaborated in the second section. A number of top-down strategies for the synthesis of graphene, including exfoliation and chemical reduction of graphene oxide, are discussed. A few bottom-up synthesis methods for graphene are also covered, including thermal chemical vapor deposition, plasma-enhanced chemical vapor deposition, thermal decomposition of silicon, unzipping of carbon nanotubes, and others. The final section provides the recent innovations in graphene applications and the commercial availability of graphene-based devices.
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Affiliation(s)
- Akanksha R. Urade
- Centre of Excellence: Nanotechnology, Indian Institute of Technology Roorkee, Roorkee, 247667 India
| | - Indranil Lahiri
- Centre of Excellence: Nanotechnology, Indian Institute of Technology Roorkee, Roorkee, 247667 India
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667 India
| | - K. S. Suresh
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667 India
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The Crack Angle of 60° Is the Most Vulnerable Crack Front in Graphene According to MD Simulations. CRYSTALS 2021. [DOI: 10.3390/cryst11111355] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Graphene is a type of 2D material with unique properties and promising applications. Fracture toughness and the tensile strength of a material with cracks are the most important parameters, as micro-cracks are inevitable in the real world. In this paper, we investigated the mechanical properties of triangular-cracked single-layer graphene via molecular dynamics (MD) simulations. The effect of the crack angle, size, temperature, and strain rate on the Young’s modulus, tensile strength, fracture toughness, and fracture strain were examined. We demonstrated that the most vulnerable triangle crack front angle is about 60°. A monitored increase in the crack angle under constant simulation conditions resulted in an enhancement of the mechanical properties. Minor effects on the mechanical properties were obtained under a constant crack shape, constant crack size, and various system sizes. Moreover, the linear elastic characteristics, including fracture toughness, were found to be remarkably influenced by the strain rate variations.
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Wu X, Zhu X. Molecular dynamics simulations of ion beam irradiation on graphene/MoS 2 heterostructure. Sci Rep 2021; 11:21113. [PMID: 34702934 PMCID: PMC8548316 DOI: 10.1038/s41598-021-00582-2] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/05/2021] [Accepted: 10/11/2021] [Indexed: 11/16/2022] Open
Abstract
The interaction between ion irradiation and two-dimensional (2D) heterostructures is important for the performance modulation and application realization, while few studies have been reported. This paper investigates the influence of Ar ion irradiation on graphene/MoS2 heterostructure by using molecular dynamics (MD) simulations. The generation of defects is studied at first by considering the influence factors (i.e., irradiation energy, dose, stacking order, and substrate). Then uniaxial tensile test simulations are conducted to uncover the evolution of the mechanical performance of graphene/MoS2 heterostructure after being irradiated by ions. At last, the control rule of interlayer distance in graphene/MoS2 heterostructure by ion irradiation is illustrated for the actual applications. This study could provide important guidance for future application in tuning the performance of graphene/MoS2 heterostructure-based devices by ion beam irradiation.
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Affiliation(s)
- Xin Wu
- School of Chemical Engineering and Technology, Sun Yat-Sen University, Zhuhai, 519082, Guangdong, China.
| | - Xiaobao Zhu
- School of Software, Nanchang Hangkong University, Nanchang, 330063, Jiangxi, China.
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Abstract
Graphene twistronics have recently gained significant attention due their superconductive behavior as a consequence of their tunable electronic properties. Although the electronic properties of twisted graphene have been extensively studied, the mechanical properties and integrity of twisted trilayer graphene (tTLG) under loading is still elusive. We investigated the fracture mechanics of tTLG with a twist angle of ±1.53° utilizing molecular dynamics simulation. This twist angle was chosen because it is known to exhibit highly superconductive behavior. The results indicate that tTLG does not preserve the excellent mechanical properties typically associated with graphene, with toughness and fracture strain values much lower in comparison. The Young’s modulus was an exception with values relatively close to pristine graphene, whereas the tensile strength was found to be roughly half of the intrinsic strength of graphene. The fracture toughness, fracture strain and strength converge as the crack length increases, reaching 0.26 J/m3, 0.0217 and 39.9 GPa at a crack length of 8 nm, respectively. The Griffth critical strain energy is 19.98 J/m2 and the critical stress intensity factor Kc is 4.47 MPa M1/2, in good agreement with that of monolayer graphene in the experiment. Our atomic insights might be helpful in the material design of twisted trilayer graphene-based electronics.
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Monolayer Twisted Graphene-Based Schottky Transistor. MATERIALS 2021; 14:ma14154109. [PMID: 34361302 PMCID: PMC8348481 DOI: 10.3390/ma14154109] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/13/2021] [Revised: 07/09/2021] [Accepted: 07/17/2021] [Indexed: 12/12/2022]
Abstract
The outstanding properties of graphene-based components, such as twisted graphene, motivates nanoelectronic researchers to focus on their applications in device technology. Twisted graphene as a new class of graphene structures is investigated in the platform of transistor application in this research study. Therefore, its geometry effect on Schottky transistor operation is analyzed and the relationship between the diameter of twist and number of twists are explored. A metal–semiconductor–metal twisted graphene-based junction as a Schottky transistor is considered. By employing the dispersion relation and quantum tunneling the variation of transistor performance under channel length, the diameter of twisted graphene, and the number of twists deviation are studied. The results show that twisted graphene with a smaller diameter affects the efficiency of twisted graphene-based Schottky transistors. Additionally, as another main characteristic, the ID-VGS is explored, which indicates that the threshold voltage is increased by diameter and number of twists in this type of transistor.
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Atomic Structure and Mechanical Properties of Twisted Bilayer Graphene. JOURNAL OF COMPOSITES SCIENCE 2018. [DOI: 10.3390/jcs3010002] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/25/2023]
Abstract
We studied the atomic structure and mechanical properties of twisted bilayer graphene with a different twist angle using molecular dynamic simulations. The two layers are corrugated after energy minimization. We found two different modes of corrugation. The mechanical properties are tested both in-plane and perpendicular to the plane. The in-plane properties are dominated by the orientation of graphene. The perpendicular properties depend on the twist angle, as the larger the twist angle, the higher the intrinsic strength.
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