Solution-Based Synthesis and Characterization of Cu2ZnSnS4 (CZTS) Thin Films

CZTS (Cu2ZnSnS4)-based Nanomaterials in Photocatalytic and Hydrogen Production Applications: A Recent Progress towards Sustainable Environment

A variety of unique compounds have been examined to accommodate the current demand for useful multi-functional nanomaterials, copper-based quaternary CZTS semiconductors are one of them. Due to their special characteristic features like non-toxicity, cheap, and abundance, they have been recommended in recent literature for various applications. Apart from individual CZTS, different hetero-structures have also been prepared with different compounds which is well discussed and elaborated in this article. Additionally, their preparation methods, properties, and application viability have also been discussed comprehensively. The application of CZTS such as photocatalytic dye degradation and hydrogen evolution reaction has been elaborated on in this article identifying their benefits and challenges to give readers a thorough visualization. Apart from that, challenges reported in studies, a few approaches are also mentioned to possibly counter them.

Mechanochemical Synthesis of Sustainable Ternary and Quaternary Nanostructured Cu2SnS3, Cu2ZnSnS4, and Cu2ZnSnSe4 Chalcogenides for Thermoelectric Applications

Copper-based chalcogenides have emerged as promising thermoelectric materials due to their high thermoelectric performance, tunable transport properties, earth abundance and low toxicity. We have presented an overview of experimental results and first-principal calculations investigating the thermoelectric properties of various polymorphs of Cu₂SnS₃ (CTS), Cu₂ZnSnS₄ (CZTS), and Cu₂ZnSnSe₄ (CZTSe) synthesized by high-energy reactive mechanical alloying (ball milling). Of particular interest are the disordered polymorphs of these materials, which exhibit phonon-glass-electron-crystal behavior-a decoupling of electron and phonon transport properties. The interplay of cationic disorder and nanostructuring leads to ultra-low thermal conductivities while enhancing electronic transport. These beneficial transport properties are the consequence of a plethora of features, including trap states, anharmonicity, rattling, and conductive surface states, both topologically trivial and non-trivial. Based on experimental results and computational methods, this report aims to elucidate the details of the electronic and lattice transport properties, thereby confirming that the higher thermoelectric (TE) performance of disordered polymorphs is essentially due to their complex crystallographic structures. In addition, we have presented synchrotron X-ray diffraction (SR-XRD) measurements and ab initio molecular dynamics (AIMD) simulations of the root-mean-square displacement (RMSD) in these materials, confirming anharmonicity and bond inhomogeneity for disordered polymorphs.

A Two-Step Magnetron Sputtering Approach for the Synthesis of Cu2ZnSnS4 Films from Cu2SnS3\ZnS Stacks

Cu₂ZnSnS₄ (CZTS) is regarded as one of the emerging materials for next-generation thin film solar cells. However, its synthesis is complex, and obtaining a single-phase CZTS thin film is difficult. This work reports the elaboration of Cu₂ZnSnS₄ thin films by a sequential magnetron sputtering deposition of Cu₂SnS₃ (CTS) and ZnS as stacked films. Initially, the CTS films were prepared on a soda lime glass substrate by annealing Cu and SnS₂ stacked layers. Second, ZnS was deposited by magnetron sputtering on the CTS films. The CTS\ZnS stacks were then annealed in Sn + S or S atmospheres. The tetragonal CZTS structure was obtained and confirmed by grazing incidence X-ray diffraction and Raman spectroscopy. The morphological and compositional characteristics, measured by scanning electron microscopy and energy-dispersive spectroscopy, revealed large grains and dense surfaces with the elemental composition close to the intended stoichiometry. Additional X-ray photoemission spectroscopy measurements were performed to determine the surface chemistry and particularities of the obtained films. The optical properties, determined using conventional spectroscopy, showed optimal absorber layer band gap values ranging between 1.38 and 1.50 eV. The electrical measurements showed that all the films are p-type with high carrier concentrations in the range of 10¹⁵ to 10²⁰ cm^-3. This new synthesis route for CZTS opens the way to obtain high-quality films by an industry-compatible method.

Static and dynamic components of Debye-Waller coefficients in the novel cubic polymorph of low-temperature disordered Cu2ZnSnS4

Cu2ZnSnS4 (CZTS) is an attractive material for sustainable photovoltaics and thermoelectrics, and several properties originate from its marked polymorphism. High-energy mechanical alloying is found to lead to a disordered phase that possesses a sphalerite-like cubic structure. This is investigated in detail with the aid of laboratory and synchrotron radiation X-ray diffraction, Raman spectroscopy, electron microscopy and ab initio molecular dynamics. The disordered cubic polymorph is preserved below 663 K. With thermal treatments above 663 K, the tetragonal kesterite phase forms, used here as a reference for structural and microstructural features. Particular attention is paid to the stacking arrangement: a significant fraction of twin faults was found in the disordered cubic samples, which then progressively annealed with domain growth and with the transition to the ordered tetragonal phase. This study also focuses on Debye-Waller coefficients, which were found to be considerably larger for the disordered cubic than the tetragonal sample. Indeed, disorder leads to an ∼1 Å2 upward shift through the temperature range 100-700 K, a feature confirmed by ab initio calculations, which points to a particularly high contribution from disordered Sn cations. This supports the general understanding that structural disorder introduces a temperature-independent static contribution to the atomic mean-square displacement. Debye-Waller coefficients are found to be a good measure of this disorder, known to have a critical effect on transport properties.

An Overview of the Strategies for Tin Selenide Advancement in Thermoelectric Application

Chalcogenide, tin selenide-based thermoelectric (TE) materials are Earth-abundant, non-toxic, and are proven to be highly stable intrinsically with ultralow thermal conductivity. This work presented an updated review regarding the extraordinary performance of tin selenide in TE applications, focusing on the crystal structures and their commonly used fabrication methods. Besides, various optimization strategies were recorded to improve the performance of tin selenide as a mid-temperature TE material. The analyses and reviews over the methodologies showed a noticeable improvement in the electrical conductivity and Seebeck coefficient, with a noticeable decrement in the thermal conductivity, thereby enhancing the tin selenide figure of merit value. The applications of SnSe in the TE fields such as microgenerators, and flexible and wearable devices are also discussed. In the future, research in low-dimensional TE materials focusing on nanostructures and nanocomposites can be conducted with the advancements in material science technology as well as microtechnology and nanotechnology.

Topological Anderson Insulator in Cation-Disordered Cu2ZnSnS4

We present the first candidate for the realization of a disorder-induced Topological Anderson Insulator in a real material system. High-energy reactive mechanical alloying produces a polymorph of Cu₂ZnSnS₄ with high cation disorder. Density functional theory calculations show an inverted ordering of bands at the Brillouin zone center for this polymorph, which is in contrast to its ordered phase. Adiabatic continuity arguments establish that this disordered Cu₂ZnSnS₄ can be connected to the closely related Cu₂ZnSnSe₄, which was previously predicted to be a 3D topological insulator, while band structure calculations with a slab geometry reveal the presence of robust surface states. This evidence makes a strong case in favor of a novel topological phase. As such, the study opens up a window to understanding and potentially exploiting topological behavior in a rich class of easily-synthesized multinary, disordered compounds.

Thermoelectric properties of CZTS thin films: effect of Cu-Zn disorder

Cu-Zn disorder is known to deeply affect kesterite (Cu2ZnSnS4, CZTS) due to the low temperature order-disorder phase transition, leading to a random occupation of the two cations in the shared crystallographic planes. This defect complex has been extensively studied in the thin film photovoltaic sector, with considerable efforts in developing methods to quantify disorder. In this study, a preliminary investigation of thermoelectric properties in temperature for thin film CZTS is presented. It is found that Cu-Zn disorder enhances both electrical conductivity and Seebeck coefficient. This can positively affect the thermoelectric performance, showing a mechanism of potential interest for a broad class of quaternary chalcogenides. The order-disorder transition is clearly visible in the electronic properties. This feature is repeatable, with samples from different preparations and groups showing consistent results, qualitatively suggesting electronic measurements as possible methods to quantify disorder. Furthermore, the reversibility of the transition allows the electronic properties to be tuned via specific thermal treatments, pointing to interesting applications in tunable electronics.

Photoconversion Optimization of Pulsed-Laser-Deposited p-CZTS/n-Si-Nanowires Heterojunction-Based Photovoltaic Devices

We report on the achievement of novel photovoltaic devices based on the pulsed laser deposition (PLD) of p-type Cu₂ZnSnS₄ (CZTS) layers onto n-type silicon nanowires (SiNWs). To optimize the photoconversion efficiency of these p-CZTS/n-SiNWs heterojunction devices, both the thickness of the CZTS films and the length of the SiNWs were independently varied in the (0.3–1.0 µm) and (1–6 µm) ranges, respectively. The kësterite CZTS films were directly deposited onto the SiNWs/Si substrates by means of a one-step PLD approach at a substrate temperature of 300 °C and without resorting to any post-sulfurization process. The systematic assessment of the PV performance of the ITO/p-CZTS/n-SiNWs/Al solar cells, as a function of both SiNWs’ length and CZTS film thickness, has led to the identification of the optimal device characteristics. Indeed, an unprecedented power conversion efficiency (PCE) as high as ~5.5%, a V_OC of 400 mV, a J_SC of 26.3 mA/cm² and a FF of 51.8% were delivered by the devices formed by SiNWs having a length of 2.2 µm along with a CZTS film thickness of 540 nm. This PCE value is higher than the current record efficiency (of 5.2%) reported for pulsed-laser-deposited-CZTS (PLD-CZTS)-based solar cells with the classical SLG/Mo/CZTS/CdS/ZnO/ITO/Ag/MgF₂ device architecture. The relative ease of depositing high-quality CZTS films by means of PLD (without resorting to any post deposition treatment) along with the gain from an extended CZTS/Si interface offered by the silicon nanowires make the approach developed here very promising for further integration of CZTS with the mature silicon nanostructuring technologies to develop novel optoelectronic devices.

Synthesis and Post-Annealing of Cu2ZnSnS4 Absorber Layers Based on Oleylamine/1-dodecanethiol

Cu₂ZnSnS₄ (CZTS) nanocrystals in oleylamine (OLA) and 1-dodecanethiol (1-DDT) solvents were successfully prepared via hot-injection method, to produce inks for the deposition of absorber layers in photovoltaic cells. In this process, 1-DDT acts as a coordinating ligand to control the nucleation and growth of CZTS nanocrystals, whereas lower amounts of OLA promote a homogeneous growth of the grains in the absorber layer. X-Ray Diffraction (XRD) revealed both tetragonal and hexagonal phases of CTZS in films obtained after soft thermal treatments (labeled TT0). In particular, 1-DDT is responsible for the formation of a greater percentage of the hexagonal phase (ZnS-wurtzite type) than that formed when only OLA is used. The thermal treatments have been varied from 500 °C to 600 °C for improving crystallization and eliminating secondary phases. Both features are known to promote CZTS thin films with band gap values typical of CZTS (1.5–1.6 eV) and suitable resistivity. This study let to compare also the CZTS post-annealing without (TT1) and with sulfur vapor (TT2) in a tubular furnace. Only tetragonal CZTS phase is observed in the XRD pattern of CZTS thin films after TT2. A small presence of localized residues of secondary phases on the same samples was revealed by μRaman measurements. The best values of band gap (1.50 eV) and resistivity (1.05 ohm.cm) were obtained after thermal treatment at 500 °C, which is suitable for absorber layer in photovoltaic application.