A Review on Graphene-Based Light Emitting Functional Devices

Graphene Thermal Infrared Emitters Integrated into Silicon Photonic Waveguides

Cost-efficient and easily integrable broadband mid-infrared (mid-IR) sources would significantly enhance the application space of photonic integrated circuits (PICs). Thermal incandescent sources are superior to other common mid-IR emitters based on semiconductor materials in terms of PIC compatibility, manufacturing costs, and bandwidth. Ideal thermal emitters would radiate directly into the desired modes of the PIC waveguides via near-field coupling and would be stable at very high temperatures. Graphene is a semimetallic two-dimensional material with comparable emissivity to thin metallic thermal emitters. It allows maximum coupling into waveguides by placing it directly into their evanescent fields. Here, we demonstrate graphene mid-IR emitters integrated with photonic waveguides that couple directly into the fundamental mode of silicon waveguides designed to work in the so-called "fingerprint region" relevant for gas sensing. High broadband emission intensity is observed at the waveguide-integrated graphene emitter. The emission at the output grating couplers confirms successful coupling into the waveguide mode. Thermal simulations predict emitter temperatures up to 1000 °C, where the blackbody radiation covers the mid-IR region. A coupling efficiency η, defined as the light emitted into the waveguide divided by the total emission, of up to 68% is estimated, superior to data published for other waveguide-integrated emitters.

Fermi-Level Engineering of Nitrogen Core-Doped Armchair Graphene Nanoribbons

Substitutional heteroatom doping of bottom-up engineered 1D graphene nanoribbons (GNRs) is a versatile tool for realizing low-dimensional functional materials for nanoelectronics and sensing. Previous efforts have largely relied on replacing C-H groups lining the edges of GNRs with trigonal planar N atoms. This type of atomically precise doping, however, only results in a modest realignment of the valence band (VB) and conduction band (CB) energies. Here, we report the design, bottom-up synthesis, and spectroscopic characterization of nitrogen core-doped 5-atom-wide armchair GNRs (N2-5-AGNRs) that yield much greater energy-level shifting of the GNR electronic structure. Here, the substitution of C atoms with N atoms along the backbone of the GNR introduces a single surplus π-electron per dopant that populates the electronic states associated with previously unoccupied bands. First-principles DFT-LDA calculations confirm that a sizable shift in Fermi energy (∼1.0 eV) is accompanied by a broad reconfiguration of the band structure, including the opening of a new band gap and the transition from a direct to an indirect semiconducting band gap. Scanning tunneling spectroscopy (STS) lift-off charge transport experiments corroborate the theoretical results and reveal the relationship among substitutional heteroatom doping, Fermi-level shifting, electronic band structure, and topological engineering for this new N-doped GNR.

Effect of defects on optical and electronic properties of graphene quantum dots: a density functional theory study

The effects of different types of defects (vacancy, Stone-Wales defects, and heteroatom doping) and varying defect concentrations (single and double defects) on the structure, electronic, and optical properties of graphene quantum dots (GQDs) are systematically investigated using time-dependent density functional theory (TD-DFT). The results reveal that most defects induce noticeable structural distortions, with increasing deformation at higher defect concentrations. Compared to pristine GQD model C96 (with a maximum absorption peak at 592 nm), the absorption spectra of 6 defective C96 exhibit blue shifts ranging from 554 to 591 nm, while 12 defective C96 lead to red shifts (598-668 nm). The HOMO-LUMO gaps vary from 0.62 to 2.04 eV (2.10 eV for pristine C96). Quantitative analysis of the absorption spectra and molecular orbital energy levels demonstrate that the electronic and optical properties of defective C96 strongly depend on the types, concentrations, and locations of defects. NTO analysis illustrates that higher electron localization exists in defective C96, which is attributed to the disruption of the original π-conjugation caused by structural distortions and different orbital hybridizations. These findings offer a comprehensive insight into the impact of defects on GQDs and provide valuable guidance for exploiting the unique features of GQDs to expand new applications in various fields.

Temperature dependence of electrical conductivity and variable hopping range mechanism on graphene oxide films

The rapid development of optoelectronic applications for optical-to-electrical conversion has increased the interest in graphene oxide material. Here, graphene oxide films (GOF) were used as source material in an infrared photodetector configuration and the temperature dependence of the electrical conductivity was studied. GOF were prepared by the double-thermal decomposition (DTD) method at 973 K, with a fixed carbonization temperature, in a pyrolysis system, under a controlled nitrogen atmosphere, over quartz substrates. Graphene oxide films were mechanically supported in a photodetector configuration on Bakelite substrates and electrically contacted with copper wires and high-purity silver paint. Morphological images from the GOF's surface were taken employing a scanning electron microscope and observed a homogeneous surface which favored the electrical contacts deposition. Vibrational characteristics were studied employing Raman spectroscopy and determined the typical graphene oxide bands. GOF were used to discuss the effect of temperature on the film's electrical conductivity. Current-voltage (I-V) curves were taken for several temperatures varying from 20 to 300 K and the electrical resistance values were obtained from 142.86 to 2.14 kΩ. The GOF electrical conductivity and bandgap energy (E_g) were calculated, and it was found that when increasing temperature, the electrical conductivity increased from 30.33 to 2023.97 S/m, similar to a semiconductor material, and E_g shows a nonlinear change from 0.33 to 0.12 eV, with the increasing temperature. Conduction mechanism was described mainly by three-dimensional variable range hopping (3D VRH). Additionally, measurements of voltage and electrical resistance, as a function of wavelength were considered, for a spectral range between 1300 and 3000 nm. It was evidenced that as the wavelength becomes longer, a greater number of free electrons are generated, which contributes to the electrical current. The external quantum efficiency (EQE) was determined for this proposed photodetector prototype, obtaining a value of 40%, similar to those reported for commercial semiconductor photodetectors. This study provides a groundwork for further development of graphene oxide films with high conductivity in large-scale preparation.

Effect of Nitrogen Doping on the Optical Bandgap and Electrical Conductivity of Nitrogen-Doped Reduced Graphene Oxide

Graphene as a material for optoelectronic design applications has been significantly restricted owing to zero bandgap and non-compatible handling procedures compared with regular microelectronic ones. In this work, nitrogen-doped reduced graphene oxide (N-rGO) with tunable optical bandgap and enhanced electrical conductivity was synthesized via a microwave-assisted hydrothermal method. The properties of the synthesized N-rGO were determined using XPS, FTIR and Raman spectroscopy, UV/vis, as well as FESEM techniques. The UV/vis spectroscopic analysis confirmed the narrowness of the optical bandgap from 3.4 to 3.1, 2.5, and 2.2 eV in N-rGO samples, where N-rGO samples were synthesized with a nitrogen doping concentration of 2.80, 4.53, and 5.51 at.%. Besides, an enhanced n-type electrical conductivity in N-rGO was observed in Hall effect measurement. The observed tunable optoelectrical characteristics of N-rGO make it a suitable material for developing future optoelectronic devices at the nanoscale.

Quantum dots/graphene nanohybrids photodetectors: progress and perspective

Semiconductor quantum dots/graphene heterostructure nanohybrids combine the advantages of the enhanced light–matter interaction and spectral tunability of quantum dots (QDs) and high charge mobility in graphene as a charge transport pathway, providing a unique platform for exploration of photodetectors with high performance. In particular, the QDs/graphene nanohybrids allow resolution to the critical issue of charge transport in QDs-only photodetectors stemming from the low charge mobility associated with both QD surface defect states and inter-QD junctions. Furthermore, the achieved capability in industrial-scale fabrication of graphene and colloidal QDs has motivated efforts in research of QDs/graphene nanohybrids focal plane arrays that are expected to be not only high performance and low cost, but also light-weight, flexible and wearable. This paper aims to highlight recent progress made in the research and development of QDs/graphene nanohybrid photodetectors and discuss the challenges remained towards their commercial applications.

Ozonation of Group-IV Elemental Monolayers: A First-Principles Study

Environmental effect on the physical and chemical properties of two-dimensional monolayers is a fundamental issue for their practical applications in nanoscale devices operating under ambient conditions. In this paper, we focus on the effect of ozone exposure on group-IV elemental monolayers. Using density functional theory and the climbing image nudged elastic band approach, calculations are performed to find the minimum energy path of O₃-mediated oxidation of the group-IV monolayers, namely graphene, silicene, germanene, and stanene. Graphene and silicene are found to represent two end points of the ozonation process: the former showing resistance to oxidation with an energy barrier of 0.68 eV, while the latter exhibit a rapid, spontaneous dissociation of O₃ into atomic oxygens accompanied by the formation of epoxide like Si-O-Si bonds. Germanene and stanene also form oxides when exposed to O₃, but with a small energy barrier of about 0.3-0.4 eV. Analysis of the results via Bader's charge and density of states shows a higher degree of ionicity of the Si-O bond followed by Ge-O and Sn-O bonds relative to the C-O bond to be the primary factor leading to the distinct ozonation response of the studied group-IV monolayers. In summary, ozonation appears to open the band gap of the monolayers with semiconducting properties forming stable oxidized monolayers, which could likely affect group-IV monolayer-based electronic and photonic devices.

Using Graphene-Based Grease as a Heat Conduction Material for Hectowatt-Level LEDs: A Natural Convection Experiment

In this study, a self-adjusting concentration of graphene thermal grease was developed to reduce the contact surface thermal resistance of 50 W light-emitting diodes (LEDs). The purpose was to identify an important type of heat conduction material with a high thermal conductivity coefficient, which can be applied to the contact surface of various high-heat sources or concentrated heat sources to achieve seamless heat transfer with an extremely low thermal resistance state. The contact heat conduction material conductivity reached the highest K value of 13.4 W/m·K with a 15 wt.% self-adjusting concentration of graphene grease. This material could continuously achieve a completely uniform and rapid thermal diffusion of heat energy. Therefore, we performed an analysis of chip-on-board light-emitting diodes (LEDs) with a highly concentrated heat source, which showed excellent heat dissipation under natural convection heat transfer. As such, this study achieved the natural convection mechanism and a heat sink volume thermal performance capacity of 473,750 mm3 for LEDs under 50 W, but those over 50 W require an enhanced forced convection solution and a heat sink volume thermal performance capacity between 473,750 mm3 and 947,500 mm3. If the heat source dissipation reaches 100 W, the volume capacity must be at least 947,500 mm3 for lighting equipment applications. In the experimental study, we also verified and analyzed the research data, including an analysis of the measured data, grease component wt.%, heat sink material selection, increase in heat sink volume, heat transfer path, and contact surface, a discrimination analysis of infrared thermal images, and an analysis of flow visualization, which were conducted to ensure quantitative and qualitative improvement, provide a mechanism for judging the technical performance, and provide research results to enable discussion.