The Early Steps of Molecule-to-Material Conversion in Chemical Vapor Deposition (CVD): A Case Study

Interplay between coordination sphere engineering and properties of nickel diketonate-diamine complexes as vapor phase precursors for the growth of NiO thin films

NiO-based films and nanostructured materials have received increasing attention for a variety of technological applications. Among the possible strategies for their fabrication, atomic layer deposition (ALD) and chemical vapor deposition (CVD), featuring manifold advantages of technological interest, represent appealing molecule-to-material routes for which a rational precursor design is a critical step. In this context, the present study is focused on the coordination sphere engineering of three heteroleptic Ni(II) β-diketonate-diamine adducts of general formula [NiL₂TMEDA] [L = 1,1,1-trifluoro-2,4-pentanedionate (tfa), 2,2-dimethyl-6,6,7,7,8,8,8-heptafluoro-3,5-octanedionate (fod) or 2,2,6,6-tetramethyl-3,5-heptanedionate (thd), and TMEDA = N,N,N',N'-tetramethylethylenediamine]. Controlled variations in the diketonate structure are pursued to investigate the influence of steric hindrance and fluorination degree on the chemico-physical characteristics of the compounds. A multi-technique investigation supported by density functional calculations highlights that all complexes are air-insensitive and monomeric and that their thermal properties and fragmentation patterns are directly dependent on functional groups in the diketonate ligands. Preliminary thermal CVD experiments demonstrate the precursors' suitability for the obtainment of NiO films endowed with flat and homogeneous surfaces, paving the way to future implementation for CVD end-uses.

Design, Characterization and Applications of Functional Nanomaterials

Nanomaterials are commonly defined as particles existing in nature or artificially manufactured materials that have one or more external dimensions in the 1-100 nm range [...].

Facile preparation of a cobalt diamine diketonate adduct as a potential vapor phase precursor for Co3O4films

Co3O4 thin films and nanosystems are implemented in a broad range of functional systems, including gas sensors, (photo)catalysts, and electrochemical devices for energy applications. In this regard, chemical vapor deposition (CVD) is a promising route for the fabrication of high-quality films in which the precursor choice plays a key role in the process development. In this work, a heteroleptic cobalt complex bearing fluorinated diketonate ligands along with a diamine moiety [Co(tfa)2·TMEDA; tfa = 1,1,1-trifluoro-2,4-pentanedionate and TMEDA = N,N,N',N'-tetramethylethylenediamine] is investigated as a potential Co molecular precursor for the CVD of Co3O4 systems. For the first time, the compound is characterized by crystal structure determination and comprehensive analytical studies, focusing also on its thermal properties and fragmentation patterns, important figures of merit for a CVD precursor. The outcomes of this investigation, accompanied by detailed theoretical studies, highlight its very favorable properties for CVD applications. In fact, growth experiments under oxygen atmospheres containing water vapor revealed the suitability of Co(tfa)2·TMEDA for the fabrication of high-quality, phase-pure Co3O4 thin films. The versatility of the proposed strategy in tailoring Co3O4 structural/morphological features highlights its potential to obtain multi-functional films with controllable properties for a variety of eventual technological end-uses.