Novel Photonic Bio-Chip Sensor Based on Strained Graphene Sheets for Blood Cell Sorting

Distributed Bragg Reflectors Employed in Sensors and Filters Based on Cavity-Mode Spectral-Domain Resonances

Spectral-domain resonances for cavities formed by two distributed Bragg reflectors (DBRs) were analyzed theoretically and experimentally. We model the reflectance and transmittance spectra of the cavity at the normal incidence of light when DBRs are represented by a one-dimensional photonic crystal (1DPhC) comprising six bilayers of TiO2/SiO2 with a termination layer of TiO2. Using a new approach based on the reference reflectance, we model the reflectance ratio as a function of both the cavity thickness and its refractive index (RI) and show that narrow dips within the 1DPhC band gap can easily be resolved. We revealed that the sensitivity and figure of merit (FOM) are as high as 610 nm/RIU and 938 RIU−1, respectively. The transmittance spectra include narrow peaks within the 1DPhC band gap and their amplitude and spacing depend on the cavity’s thickness. We experimentally demonstrated the sensitivity to variations of relative humidity (RH) of moist air and FOM as high as 0.156 nm/%RH and 0.047 %RH−1, respectively. In addition, we show that, due to the transmittance spectra, the DBRs with air cavity can be employed as spectral filters, and this is demonstrated for two LED sources for which their spectra are filtered at wavelengths 680 nm and 780 nm, respectively, to widths as narrow as 2.3 nm. The DBR-based resonators, thus, represent an effective alternative to both sensors and optical filters, with advantages including the normal incidence of light and narrow-spectral-width resonances.

The impact of magnetized cold plasma and its various properties in sensing applications

These analyses present a novel magnetized cold plasma-based 1D photonic crystal structure for detecting the refractive index of various bio-analytes. The proposed structure is designed with two photonic crystals composed of an alternating layer of right-hand polarization and left-hand polarization of the magnetized cold plasma material with a central defect layer. Transmittance characteristics of the structure are studied by employing the well-known transfer matrix method. Various geometrical parameters such as electron density, external magnetic field, thickness of odd and even layers of the multilayers, thickness of the sample layer, and incident angle are judiciously optimized to attain the best sensitivity, figure of merit, quality factor, signal-to-noise ratio, detection range and limit of detection. Finally, a maximum sensitivity of 25 GHz/RIU is accomplished with the optimized value of structure parameters, which can be considered as a noteworthy sensing performance.

Pure Graphene Oxide Vertical p-n Junction with Remarkable Rectification Effect

Graphene p-n junctions have important applications in the fields of optical interconnection and low-power integrated circuits. Most current research is based on the lateral p-n junction prepared by chemical doping and other methods. Here, we report a new type of pure graphene oxide (pGO) vertical p-n junctions which do not dope any other elements but only controls the oxygen content of GO. The I-V curve of the pGO vertical p-n junction demonstrates a remarkable rectification effect. In addition, the pGO vertical p-n junction shows stability of its rectification characteristic over long-term storage for six months when sealed and stored in a PE bag. Moreover, the pGO vertical p-n junctions have obvious photoelectric response and various rectification effects with different thicknesses and an oxygen content of GO, humidity, and temperature. Hall effect test results show that rGO is an n-type semiconductor; theoretical calculations and research show that GO is generally a p-type semiconductor with a bandgap, thereby forming a p-n junction. Our work provides a method for preparing undoped GO vertical p-n junctions with advantages such as simplicity, convenience, and large-scale industrial preparation. Our work demonstrates great potential for application in electronics and highly sensitive sensors.