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Kang Y, Yang K, Fu J, Wang Z, Li X, Lu Z, Zhang J, Li H, Zhang J, Ma W. Selective Interfacial Excited-State Carrier Dynamics and Efficient Charge Separation in Borophene-Based Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307591. [PMID: 37757801 DOI: 10.1002/adma.202307591] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/29/2023] [Revised: 09/12/2023] [Indexed: 09/29/2023]
Abstract
Borophene-based van der Waals heterostructures have demonstrated enormous potential in the realm of optoelectronic and photovoltaic devices, which has sparked a wide range of interest. However, a thorough understanding of the microscopic excited-state electronic dynamics at interfaces is lacking, which is essential for determining the macroscopic optoelectronic and photovoltaic performance of borophene-based devices. In this study, photoexcited carrier dynamics of β12 , χ3 , and α΄ borophene/MoS2 heterostructures are systematically studied based on time-domain nonadiabatic molecular dynamics simulations. Different Schottky contacts are found in borophene/semiconductor heterostructures. The interplay between Schottky barriers, electronic coupling, and the involvement of different phonon modes collectively contribute to the unique carrier dynamics in borophene-based heterostructures. The diverse borophene allotropes within the heterostructures exhibit distinct and selective carrier transfer behaviors on an ultrafast timescale: electrons tunnel into α΄ borophene with an ultrafast transfer rate (≈29 fs) in α΄/MoS2 heterostructures, whereas β12 borophene only allows holes to migrate with a lifetime of 176 fs. The feature enables efficient charge separation and offers promising avenues for applications in optoelectronic and photovoltaic devices. This study provides insight into the interfacial carrier dynamics in borophene-based heterostructures, which is helpful in further design of advanced 2D boron-based optoelectronic and photovoltaic devices.
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Affiliation(s)
- Yuchong Kang
- Ningxia Key Laboratory of Photovoltaic Materials, School of Materials and New Energy, Ningxia University, Yinchuan, 750021, P. R. China
| | - Kun Yang
- Ningxia Key Laboratory of Photovoltaic Materials, School of Materials and New Energy, Ningxia University, Yinchuan, 750021, P. R. China
| | - Jing Fu
- Ningxia Key Laboratory of Photovoltaic Materials, School of Materials and New Energy, Ningxia University, Yinchuan, 750021, P. R. China
| | - Zongguo Wang
- Computer Network Information Center, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Xuao Li
- Ningxia Key Laboratory of Photovoltaic Materials, School of Materials and New Energy, Ningxia University, Yinchuan, 750021, P. R. China
| | - Zhiqiang Lu
- Ningxia Key Laboratory of Photovoltaic Materials, School of Materials and New Energy, Ningxia University, Yinchuan, 750021, P. R. China
| | - Jia Zhang
- Max Born Institut für Nichtlineare Optik und Kurzzeitspektroskopie, 12489, Berlin, Germany
| | - Haibo Li
- Ningxia Key Laboratory of Photovoltaic Materials, School of Materials and New Energy, Ningxia University, Yinchuan, 750021, P. R. China
| | - Jin Zhang
- Max Planck Institute for the Structure and Dynamics of Matter and Center for Free-Electron Laser Science, Luruper Chaussee 149, 22761, Hamburg, Germany
| | - Wei Ma
- Ningxia Key Laboratory of Photovoltaic Materials, School of Materials and New Energy, Ningxia University, Yinchuan, 750021, P. R. China
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Rivera-Tello CD, Guerrero JA, Huerta L, Flores-Ruiz FJ, Flores M, Quiñones-Galván JG. Influence of plasma kinetic energy during the pulsed laser deposition of borophene films on silicon (100). RSC Adv 2023; 13:29819-29829. [PMID: 37829715 PMCID: PMC10566584 DOI: 10.1039/d3ra04601j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/10/2023] [Accepted: 09/25/2023] [Indexed: 10/14/2023] Open
Abstract
Developing borophene films with good structural stability on non-metallic substrates to maximize their potential in photosensitivity, gas detection, photothermia, energy storage, and deformation detection, among others has been challenging in recent years. Herein, we succeeded in the pulsed laser deposition of multilayered borophene films on Si (100) with β12 or χ3 bonding by tuning the mean kinetic energy in the plasma during the deposition process. Raman and X-ray photoelectron spectroscopies confirm β12 and χ3 bonding in the films. Borophene films with β12 bonding were obtained by tuning a high mean kinetic energy in the plasma, while borophene with χ3 bonding required a relatively low mean kinetic energy. Atomic force microscopy (AFM) micrographs revealed a granular and directional growth of the multilayered borophene films following the linear atomic terraces from the (100) silicon substrate. AFM nanofriction was used to access the borophene surfaces and to reveal the pull-off force and friction coefficient of the films where the surface oxide showed a significant contribution. To summarize, we show that it is possible to deposit multilayered borophene thin films with different bondings by tuning the mean kinetic energy during pulsed laser deposition. The characterization of the plasma during borophene deposition accompanies our findings, providing support for the changes in kinetic energy.
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Affiliation(s)
- César D Rivera-Tello
- Departamento de Ingeniería Mecánica Eléctrica, CUCEI, Universidad de Guadalajara Blvd. Marcelino García Barragán 1421, Olímpica Guadalajara Jalisco C.P. 44430 Mexico
| | - J A Guerrero
- Departamento de Ingeniería Mecánica Eléctrica, CUCEI, Universidad de Guadalajara Blvd. Marcelino García Barragán 1421, Olímpica Guadalajara Jalisco C.P. 44430 Mexico
| | - L Huerta
- Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México A. P. 70-360 04510 Ciudad de México Mexico
| | - Francisco J Flores-Ruiz
- CONAHCYT-Instituto de Física, Benemérita Universidad Autónoma de Puebla Ciudad Universitaria, Edif. IF-1 Puebla 72570 México
| | - M Flores
- Departamento de Ingeniería de Proyectos, Universidad de Guadalajara 45150 Zapopan Jalisco Mexico
| | - J G Quiñones-Galván
- Departamento de Física, CUCEI, Universidad de Guadalajara Blvd. Marcelino García Barragán 1421, Olímpica Guadalajara Jalisco C.P. 44430 Mexico
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Zhang X, Hikichi M, Iimori T, Tsujikawa Y, Yuan M, Horio M, Yubuta K, Komori F, Miyauchi M, Kondo T, Matsuda I. Accelerated Synthesis of Borophane (HB) Sheets through HCl-Assisted Ion-Exchange Reaction with YCrB4. Molecules 2023; 28:molecules28072985. [PMID: 37049748 PMCID: PMC10096318 DOI: 10.3390/molecules28072985] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/27/2023] [Revised: 03/16/2023] [Accepted: 03/21/2023] [Indexed: 03/30/2023] Open
Abstract
We present an enhanced method for synthesizing sheets of borophane. Despite the challenges associated with low efficiency, we discovered that incorporating hydrochloric acid into the ion-exchange reaction significantly improved the production yield from 20% to over 50%. After a thorough examination of the reaction, we gained insight into the underlying mechanisms and found that the use of hydrochloric acid provides two key benefits: accelerated production of borophene and isolation of high-purity products. This method has the potential to pave the way for the production of novel topological 2D materials with potential industrial applications.
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