Selective Interfacial Excited-State Carrier Dynamics and Efficient Charge Separation in Borophene-Based Heterostructures

Borophene-based van der Waals heterostructures have demonstrated enormous potential in the realm of optoelectronic and photovoltaic devices, which has sparked a wide range of interest. However, a thorough understanding of the microscopic excited-state electronic dynamics at interfaces is lacking, which is essential for determining the macroscopic optoelectronic and photovoltaic performance of borophene-based devices. In this study, photoexcited carrier dynamics of β12 , χ3 , and α΄ borophene/MoS2 heterostructures are systematically studied based on time-domain nonadiabatic molecular dynamics simulations. Different Schottky contacts are found in borophene/semiconductor heterostructures. The interplay between Schottky barriers, electronic coupling, and the involvement of different phonon modes collectively contribute to the unique carrier dynamics in borophene-based heterostructures. The diverse borophene allotropes within the heterostructures exhibit distinct and selective carrier transfer behaviors on an ultrafast timescale: electrons tunnel into α΄ borophene with an ultrafast transfer rate (≈29 fs) in α΄/MoS2 heterostructures, whereas β12 borophene only allows holes to migrate with a lifetime of 176 fs. The feature enables efficient charge separation and offers promising avenues for applications in optoelectronic and photovoltaic devices. This study provides insight into the interfacial carrier dynamics in borophene-based heterostructures, which is helpful in further design of advanced 2D boron-based optoelectronic and photovoltaic devices.

Vertical strain engineering of Van der Waals heterostructures

Van der Waals materials and their interfaces play critical roles in defining electrical contacts for nanoelectronics and developing vehicles for mechanoelectrical energy conversion. In this work, we propose a vertical strain engineering approach by enforcing pressure across the heterostructures. First-principles calculations show that the in-plane band structures of 2D materials such as graphene, h-BN, and MoS₂as well as the electronic coupling at their contacts can be significantly modified. For the graphene/h-BN contact, a band gap in graphene is opened, while at the graphene/MoS₂interface, the band gap of MoS₂and the Schottky barrier height at contact diminish. Changes and transitions in the nature of contacts are attributed to localized orbital coupling and analyzed through the redistribution of charge densities, the crystal orbital Hamilton population, and electron localization, which yield consistent measures. These findings offer key insights into the understanding of interfacial interaction between 2D materials as well as the efficiency of electronic transport and energy conversion processes.

Alkali functionalized carbon nitride with internal van der Waals heterostructures: Directional charge flow to enhance photocatalytic hydrogen production

Improving the charge separation and migration in graphitic carbon nitride (CN) is the critical issue to enhance its photocatalytic performance, but still remains very challenging. Herein, the alkali metals were introduced into the interlayer and intralayer of CN to tackle this challenge. The lithium sodium-modifying carbon nitride layer (LiNaCN2) and the adjacent CN layer formed a van der Waals heterostructures (VDWHs), while the potassium-intercalating served as interlayer charge transfer channels to induce the directional charge flow. Experiments and theoretical calculations indicated that such unique construction provided intrinsic driving force to obtain the electrons from LiNaCN2 to CN via directional potassium channels. In accordance with the theoretical prediction, a dramatically red-shift of the light absorption feature was achieved for interlayer potassium-intercalating and intralayer lithium sodium-modifying co-functionalized carbon nitride (LiNaCN-K-CN2) to show narrowed bandgap energy of 2.15 eV. This directional charge flow in CN resulted in the rapid transfer of charge carriers in both interlayer as well as intralayer of CN, which reduced the electronic localization as well as extended the π conjugative effect. Consequently, the LiNaCN-K-CN2 displayed stable and remarkable hydrogen production rate of about 2.46 mmol g^-1 h^-1 with apparent quantum yield (AQY) of about 13.68% at 435 nm, which was 22 folds higher than that of the pristine CN. This finding provides the feasible strategy to precisely tune the directions of charge transfer for high-performance CN-based photocatalysts.

Ab Initio Study of Graphene/hBN Van der Waals Heterostructures: Effect of Electric Field, Twist Angles and p-n Doping on the Electronic Properties

In this work, we study the structural and electronic properties of boron nitride bilayers sandwiched between graphene sheets. Different stacking, twist angles, doping, as well as an applied external gate voltage, are reported to induce important changes in the electronic band structure near the Fermi level. Small electronic lateral gaps of the order of few meV can appear near the Dirac points K. We further discuss how the bandstructures change applying a perpendicular external electric field, showing how its application lifts the degeneracy of the Dirac cones and, in the twisted case, moves their crossing points away from the Fermi energy. Then, we consider the possibility of co-doping, in an asymmetric way, the two external graphene layers. This is a situation that could be realized in heterostructures deposited on a substrate. We show that the co-doping acts as an effective external electric field, breaking the Dirac cones degeneracy. Finally, our work demonstrates how, by playing with field strength and p-n co-doping, it is possible to tune the small lateral gaps, pointing towards a possible application of C/BN sandwich structures as nano-optical terahertz devices.

Graphene-based SiC Van der Waals heterostructures: nonequilibrium molecular dynamics simulation study

The structural properties and thermal conductivity of graphene-based SiC heterostructures are investigated using the reverse nonequilibrium molecular dynamics. The C/SiC/C heterostructure has the greatest value of cohesive energy due to the effect of vdW interactions between layers. The surfaces of heterostructures begin to ripple as a direct consequence of the plane fluctuations observed around T = 400 K. The thermal conductivity at room temperature is determined. The length and the armchair and zigzag orientations increase the magnitude of κ which decreases with increasing temperature. This change is attributed to the phonon Umklapp scattering and phonon cross-plane couplings. The impact of point vacancy, bi-vacancy and edge vacancy in a concentration range up to 2% is also discussed. The localization of low-frequency phonons around the vacancy induces a decaying characteristic of thermal conductivity. The effect depends on the type of vacancy and is more pronounced in heterostructures with point vacancy. The present results make pristine and defective heterostructures promising materials for various thermoelectric applications with tunable functionalities.

Micromask Lithography for Cheap and Fast 2D Materials Microstructures Fabrication

The fast and precise fabrication of micro-devices based on single flakes of novel 2D materials and stacked heterostructures is vital for exploration of novel functionalities. In this paper, we demonstrate a fast high-resolution contact mask lithography through a simple upgrade of metallographic optical microscope. Suggested kit for the micromask lithography is compact and easily compatible with a glove box, thus being suitable for a wide range of air-unstable materials. The shadow masks could be either ordered commercially or fabricated in a laboratory using a beam lithography. The processes of the mask alignment and the resist exposure take a few minutes and provide a micrometer resolution. With the total price of the kit components around USD 200, our approach would be convenient for laboratories with the limited access to commercial lithographic systems.

A graphene/TiS3 heterojunction for resistive sensing of polar vapors at room temperature

The room temperature polar vapor sensing behavior of a graphene-TiS₃ heterojunction material and TiS₃ nanoribbons is described. The nanoribbons were synthesized via chemical vapor transport (CVT) and their structure was investigated by scanning electron microscopy, high resolution transmission electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, Raman and Fourier transform infrared spectroscopies. The gas sensing performance was assessed by following the changes in their resistivities. Sensing devices were fabricated with gold contacts and with lithographically patterned graphene (Gr) electrodes in a heterojunction Gr-TiS₃-Gr. The gold contacted TiS₃ device has a rather linear I-V behavior while the Gr-TiS₃-Gr heterojunction forms a contact with a higher Schottky barrier (250 meV). The I-V responses of the sensors were recorded at room temperature at a relative humidity of 55% and for different ethanol vapor concentrations (varying from 2 to 20 ppm). The plots indicate an increase in the resistance of Gr-TiS₃-Gr due to adsorption of water and ethanol with a relatively high sensing response (~495% at 2 ppm). The results reveal that stable responses to 2 ppm concentrations of ethanol are achieved at room temperature. The response and recovery times are around 8 s and 72 s, respectively. Weaker responses are obtained for methanol and acetone. Graphical abstract Schematic representation of resistance sensor for detection of low concentration of ethanol vapor. The graphene and TiS₃ nanoribbons were synthesized using chemical vapor deposition and chemical vapor transport technique respectively. The 2D graphene/TiS₃ heterojunction device was fabricated to make a high response sensor due to their synergy effect.