Emerging 2D Materials and Their Van Der Waals Heterostructures

Enhanced Optoelectronic Performance of p-WSe2/Re0.12W0.42Mo0.46S2 Heterojunction

Stacking of van der Waals (vdW) heterostructures and chemical element doping have emerged as crucial methods for enhancing the performance of semiconductors. This study proposes a novel strategy for modifying heterostructures by codoping MoS2 with two elements, Re and W, resulting in the construction of a RexWyMo1-x-yS2/WSe2 heterostructure for the preparation of photodetectors. This approach incorporates multiple strategies to enhance the performance, including hybrid stacking of materials, type-II band alignment, and regulation of element doping. As a result, the RexWyMo1-x-yS2/WSe2 devices demonstrate exceptional performance, including high photoresponsivity (1550.22 A/W), high detectivity (8.17 × 1013 Jones), and fast response speed (rise/fall time, 190 ms/1.42 s). Moreover, the ability to tune the band gap through element doping enables spectral response in the ultraviolet (UV), visible light, and near-infrared (NIR) regions. This heterostructure fabrication scheme highlights the high sensitivity and potential applications of vdW heterostructure (vdWH) in optoelectronic devices.

Multi-Layer Palladium Diselenide as a Contact Material for Two-Dimensional Tungsten Diselenide Field-Effect Transistors

Tungsten diselenide (WSe2) has emerged as a promising ambipolar semiconductor material for field-effect transistors (FETs) due to its unique electronic properties, including a sizeable band gap, high carrier mobility, and remarkable on-off ratio. However, engineering the contacts to WSe2 remains an issue, and high contact barriers prevent the utilization of the full performance in electronic applications. Furthermore, it could be possible to tune the contacts to WSe2 for effective electron or hole injection and consequently pin the threshold voltage to either conduction or valence band. This would be the way to achieve complementary metal-oxide-semiconductor devices without doping of the channel material.This study investigates the behaviour of two-dimensional WSe2 field-effect transistors with multi-layer palladium diselenide (PdSe2) as a contact material. We demonstrate that PdSe2 contacts favour hole injection while preserving the ambipolar nature of the channel material. This consequently yields high-performance p-type WSe2 devices with PdSe2 van der Waals contacts. Further, we explore the tunability of the contact interface by selective laser alteration of the WSe2 under the contacts, enabling pinning of the threshold voltage to the valence band of WSe2, yielding pure p-type operation of the devices.

Unlocking the Potential of Nanoribbon-Based Sb2S3/Sb2Se3 van-der-Waals Heterostructure for Solar-Energy-Conversion and Optoelectronics Applications

High-performance nanosized optoelectronic devices based on van der Waals (vdW) heterostructures have significant potential for use in a variety of applications. However, the investigation of nanoribbon-based vdW heterostructures are still mostly unexplored. In this study, based on first-principles calculations, we demonstrate that a Sb2S3/Sb2Se3 vdW heterostructure, which is formed by isostructural nanoribbons of stibnite (Sb2S3) and antimonselite (Sb2Se3), possesses a direct band gap with a typical type-II band alignment, which is suitable for optoelectronics and solar energy conversion. Optical absorption spectra show broad profiles in the visible and UV ranges for all of the studied configurations, indicating their suitability for photodevices. Additionally, in 1D nanoribbons, we see sharp peaks corresponding to strongly bound excitons in a fashion similar to that of other quasi-1D systems. The Sb2S3/Sb2Se3 heterostructure is predicted to exhibit a remarkable power conversion efficiency (PCE) of 28.2%, positioning it competitively alongside other extensively studied two-dimensional (2D) heterostructures.

Temperature-Dependent Conduction and Photoresponse in Few-Layer ReS2

The electrical behavior and the photoresponse of rhenium disulfide field-effect transistors (FETs) have been widely studied; however, only a few works have investigated the photocurrent as a function of temperature. In this paper, we perform the electrical characterization of few-layer ReS2-based FETs with Cr-Au contacts over a wide temperature range. We exploit the temperature-dependent transfer and output characteristics to estimate the effective Schottky barrier at the Cr-Au/ReS2 interface and to investigate the temperature behavior of parameters, such as the threshold voltage, carrier concentration, mobility, and subthreshold swing. Through time-resolved photocurrent measurements, we show that the photocurrent increases with temperature and exhibits a linear dependence on the incident light power at both low and room temperatures and a longer rise/decay time at higher temperatures. We surmise that the photocurrent is affected by the photobolometric effect and light-induced desorption of adsorbates which are facilitated by the high temperature and the low pressure.

Photoelectric performance of InSe vdW semi-floating gate p-n junction transistor

Semi-floating gate transistors based on vdW materials are often used in memory and programmable logic applications. In this paper, we propose a semi-floating gate photoelectric p-n junction transistor structure which is stacked by InSe/h-BN/Gr. By modulating gate voltage, InSe can be presented as N-type and P-type respectively on different substrates, and then combined into p-n junction. Moreover, InSe/h-BN/Gr device can be switched freely between N-type resistance and p-n junction. The resistance value of InSe resistor and the photoelectric properties of the p-n junction are also sensitively modulated by laser. Under dark conditions, the rectification ratio of p-n junction can be as high as 107. After laser modulation, the device has a response up to 1.154 × 104A W-1, a detection rate up to 5.238 × 1012Jones, an external quantum efficiency of 5.435 × 106%, and a noise equivalent power as low as 1.262 × 10-16W/Hz1/2. It lays a foundation for the development of high sensitivity and fast response rate tunable photoelectric p-n junction transistor.

Artificial Photosynthesis: Current Advancements and Future Prospects

Artificial photosynthesis is a technology with immense potential that aims to emulate the natural photosynthetic process. The process of natural photosynthesis involves the conversion of solar energy into chemical energy, which is stored in organic compounds. Catalysis is an essential aspect of artificial photosynthesis, as it facilitates the reactions that convert solar energy into chemical energy. In this review, we aim to provide an extensive overview of recent developments in the field of artificial photosynthesis by catalysis. We will discuss the various catalyst types used in artificial photosynthesis, including homogeneous catalysts, heterogeneous catalysts, and biocatalysts. Additionally, we will explore the different strategies employed to enhance the efficiency and selectivity of catalytic reactions, such as the utilization of nanomaterials, photoelectrochemical cells, and molecular engineering. Lastly, we will examine the challenges and opportunities of this technology as well as its potential applications in areas such as renewable energy, carbon capture and utilization, and sustainable agriculture. This review aims to provide a comprehensive and critical analysis of state-of-the-art methods in artificial photosynthesis by catalysis, as well as to identify key research directions for future advancements in this field.

Insights into Structural, Electronic, and Transport Properties of Pentagonal PdSe2 Nanotubes Using First-Principles Calculations

One-dimensional (1D) novel pentagonal materials have gained significant attention as a new class of materials with unique properties that could influence future technologies. In this report, we studied the structural, electronic, and transport properties of 1D pentagonal PdSe₂ nanotubes (p-PdSe₂ NTs). The stability and electronic properties of p-PdSe₂ NTs with different tube sizes and under uniaxial strain were investigated using density functional theory (DFT). The studied structures showed an indirect-to-direct bandgap transition with slight variation in the bandgap as the tube diameter increased. Specifically, (5 × 5) p-PdSe₂ NT, (6 × 6) p-PdSe₂ NT, (7 × 7) p-PdSe₂ NT, and (8 × 8) p-PdSe₂ NT are indirect bandgap semiconductors, while (9 × 9) p-PdSe₂ NT exhibits a direct bandgap. In addition, under low uniaxial strain, the surveyed structures were stable and maintained the pentagonal ring structure. The structures were fragmented under tensile strain of 24%, and compression of -18% for sample (5 × 5) and -20% for sample (9 × 9). The electronic band structure and bandgap were strongly affected by uniaxial strain. The evolution of the bandgap vs. the strain was linear. The bandgap of p-PdSe₂ NT experienced an indirect-direct-indirect or a direct-indirect-direct transition when axial strain was applied. A deformability effect in the current modulation was observed when the bias voltage ranged from about 1.4 to 2.0 V or from -1.2 to -2.0 V. Calculation of the field effect I-V characteristic showed that the on/off ratio was large with bias potentials from 1.5 to 2.0 V. This ratio increased when the inside of the nanotube contained a dielectric. The results of this investigation provide a better understanding of p-PdSe₂ NTs, and open up potential applications in next-generation electronic devices and electromechanical sensors.

Advanced Field-Effect Sensors

Sensors based on the field-effect principle have been used for more than fifty years in a variety of applications ranging from bio-chemical sensing to radiation detection or environmental parameter monitoring [...].

Construction of PCN-222 and Atomically Thin 2D CNs Van Der Waals Heterojunction for Enhanced Visible Light Photocatalytic Hydrogen Production

Atomically thin two-dimensional (2D) CN sheets have attracted extensive attention in the field of photocatalysis because of their shorter diffusion path of photogenerated carriers and abundant surface reaction sites than bulk CN. However, 2D CNs still exhibit poor visible-light photocatalytic activity because of a strong quantum size effect. Here, PCN-222/CNs vdWHs were successfully constructed using the electrostatic self-assembly method. The results showed that PCN-222/CNs vdWHs with 1 wt.% PCN-222 enhanced the absorption range of CNs from 420 to 438 nm, which improved the absorption capacity of visible light. Additionally, the hydrogen production rate of 1 wt.% PCN-222/CNs is four times that of the pristine 2D CNs. This study provides a simple and effective strategy for 2D CN-based photocatalysts to promote visible light absorption.

Atypical performance of CoO-accelerated interface tweaking in hierarchical cobalt phosphide/oxide@P-doped rGO heterostructures for hybrid supercapacitors

Designing two-dimensional (2D) heterostructures based on suitable energy materials is a promising strategy to achieve high-performance supercapacitors with hybridized transition metal and carbonaceous-based electrodes. The influence of each component and its content on the capacitor performance necessitates deeper insights. In this study, a 2D/2D heterostructure made of hierarchical pseudocapacitive cobalt phosphide/oxide and P-doped reduced graphene oxide (PrGO) nanosheets (CoP/CoO@PrGO) was fabricated using porous zeolitic-imidazolate framework precursor. The decoration of 2D leaf-like CoP/CoO hybrid onto PrGO could create a unique interface with a large number of active sites, CoO-driven creation of pseudocapacitive surface PO_x species, and high P content (∼3 at.%) in PrGO, thus promoting the Faradaic reaction, electrical conductivity, and overall charge storage. This framework yields a high specific capacitance of 405 F g^-1 at 5 A g^-1 and excellent cycling stability (over 100 % after 10,000 cycles), superior to those of pristine CoP@PrGO (300 F g^-1 at 5 A g^-1). Furthermore, the fabricated asymmetric supercapacitor delivers reasonable energy density of 4.2 Wh kg^-1 at a power density of 785 W kg^-1 and cycling stability of ∼100 % after 10,000 cycles. Therefore, CoP/CoO@PrGO with its unique interfacial properties can promote the development of heterostructure electrode for high-performance supercapacitors.

Transition-Metal Dichalcogenides in Electrochemical Batteries and Solar Cells

The advent of new nanomaterials has resulted in dramatic developments in the field of energy production and storage. Due to their unique structure and properties, transition metal dichalcogenides (TMDs) are the most promising from the list of materials recently introduced in the field. The amazing progress in the use TMDs for energy storage and production inspired us to review the recent research on TMD-based catalysts and electrode materials. In this report, we examine TMDs in a variety of electrochemical batteries and solar cells with special focus on MoS₂ as the most studied and used TMD material.

Resistive Switching Crossbar Arrays Based on Layered Materials

Resistive switching (RS) devices are metal/insulator/metal cells that can change their electrical resistance when electrical stimuli are applied between the electrodes, and they can be used to store and compute data. Planar crossbar arrays of RS devices can offer a high integration density (>10⁸  devices mm^{- 2} ) and this can be further enhanced by stacking them three-dimensionally. The advantage of using layered materials (LMs) in RS devices compared to traditional phase-change materials and metal oxides is that their electrical properties can be adjusted with a higher precision. Here, the key figures-of-merit and procedures to implement LM-based RS devices are defined. LM-based RS devices fabricated using methods compatible with industry are identified and discussed. The focus is on small devices (size < 9 µm² ) arranged in crossbar structures, since larger devices may be affected by artifacts, such as grain boundaries and flake junctions. How to enhance device performance, so to accelerate the development of this technology, is also discussed.

Interface Engineering in 2D/2D Heterogeneous Photocatalysts

Assembling different 2D nanomaterials into heterostructures with strong interfacial interactions presents a promising approach for novel artificial photocatalytic materials. Chemically implementing the 2D nanomaterials' construction/stacking modes to regulate different interfaces can extend their functionalities and achieve good performance. Herein, based on different fundamental principles and photochemical processes, multiple construction modes (e.g., face-to-face, edge-to-face, interface-to-face, edge-to-edge) are overviewed systematically with emphasis on the relationships between their interfacial characteristics (e.g., point, linear, planar), synthetic strategies (e.g., in situ growth, ex situ assembly), and enhanced applications to achieve precise regulation. Meanwhile, recent efforts for enhancing photocatalytic performances of 2D/2D heterostructures are summarized from the critical factors of enhancing visible light absorption, accelerating charge transfer/separation, and introducing novel active sites. Notably, the crucial roles of surface defects, cocatalysts, and surface modification for photocatalytic performance optimization of 2D/2D heterostructures are also discussed based on the synergistic effect of optimization engineering and heterogeneous interfaces. Finally, perspectives and challenges are proposed to emphasize future opportunities for expanding 2D/2D heterostructures for photocatalysis.

Excellent photocatalytic properties in 2D ZnO/SiC van der Waals hetero-bilayers: water-splitting H2-fuel production

This research unravels the photocatalytic properties of a 2D ZnO/SiC van der Waals hetero-bilayer for potential water-splitting applications by first-principles calculations. Four unique stacking patterns are considered in studying the electronic and optical properties in the presence and absence of biaxial external strain. For pattern-I and II, large negative binding energy and positive phonon frequencies are observed, denoting chemical and mechanical stabilities. Under the HSE-06 pseudo potential, the calculated bandgap value for pattern-I and II reaches 2.86 eV and 2.74 eV, respectively. 2D ZnO/SiC shows a high absorption coefficient (∼10⁵ cm^-1). The absorption peak under biaxial strain could reach ∼3.5 times the peak observed under unstrained conditions. Under strain, a shift from compressive to tensile biaxial strain (-6% to 6%) results in a bandgap decrease from 3.18 eV to 2.52 eV and 3.09 eV to 2.43 eV, for pattern-I and II, respectively. The observed strain-driven kinetic overpotential for 2D ZnO/SiC pattern-I and II easily engenders photocatalytic redox reactions. The excellent mechanical durability and strain-driven large kinetic overpotential suggest 2D ZnO/SiC heterobilayers as a prospective material for water-splitting H₂-fuel production.

Structural, electronic and thermoelectric properties of GeC and MXO (M = Ti, Zr and X = S, Se) monolayers and their van der Waals heterostructures

Vertical stacking of two-dimensional materials into layered van der Waals heterostructures is considered favourable for nanoelectronics and thermoelectric applications. In this work, we investigate the structural, electronic and thermoelectric properties of GeC and Janus monolayers MXO (M = Ti, Zr; X = S, Se) and their van der Waals (vdW) heterostructures using first-principles calculations. The values of binding energies, interlayer distances and thermal stability confirm the stability of these vdW heterostructures. The calculated band structure shows that GeC monolayer have a direct band gap while MXO (M = Ti, Zr; X = S, Se) and their van der Waals heterostructures show indirect band nature. Partial density of states confirms the type-II band alignment of GeC–MXY vdW heterostructures. Our results shows that ZrSeO (GeC) monolayers and GeC–ZrSO vdW heterostructures have higher power factor, making them promising for thermoelectric device applications.

Calculated Seebeck coefficient (a) and (b) electrical conductivity (c) and (d) and power factor (e) and (f) of GeC–TiSO, GeC–TiSeO, GeC–ZrSO and GeC–ZrSeO vdW heterostructures for 300 K and 800 K, respectively.

Temperature dependent studies on centimeter-scale MoS2and vdW heterostructures

Transition metal dichalcogenides is an emerging 2D semiconducting material group which has excellent physical properties in the ultimately scaled thickness dimension. Specifically, van der Waals heterostructures hold the great promise in further advancing both the fundamental scientific knowledge and practical technological applications of 2D materials. Although 2D materials have been extensively studied for various sensing applications, temperature sensing still remains relatively unexplored. In this work, we experimentally study the temperature-dependent Raman spectroscopy and electrical conductivity of molybdenum disulfide (MoS₂) and its heterostructures with platinum dichalcogenides (PtSe₂and PtTe₂) to explore their potential to become the next-generation temperature sensor. It is found that the MoS₂-PtX₂heterostructure shows the great promise as the high-sensitivity temperature sensor.

Plasma-Assisted Nanofabrication: The Potential and Challenges in Atomic Layer Deposition and Etching

The growing need for increasingly miniaturized devices has placed high importance and demands on nanofabrication technologies with high-quality, low temperatures, and low-cost techniques. In the past few years, the development and recent advances in atomic layer deposition (ALD) processes boosted interest in their use in advanced electronic and nano/microelectromechanical systems (NEMS/MEMS) device manufacturing. In this context, non-thermal plasma (NTP) technology has been highlighted because it allowed the ALD technique to expand its process window and the fabrication of several nanomaterials at reduced temperatures, allowing thermosensitive substrates to be covered with good formability and uniformity. In this review article, we comprehensively describe how the NTP changed the ALD universe and expanded it in device fabrication for different applications. We also present an overview of the efforts and developed strategies to gather the NTP and ALD technologies with the consecutive formation of plasma-assisted ALD (PA-ALD) technique, which has been successfully applied in nanofabrication and surface modification. The advantages and limitations currently faced by this technique are presented and discussed. We conclude this review by showing the atomic layer etching (ALE) technique, another development of NTP and ALD junction that has gained more and more attention by allowing significant advancements in plasma-assisted nanofabrication.

Research trends in biomedical applications of two-dimensional nanomaterials over the last decade - A bibliometric analysis

Two-dimensional (2D) nanomaterials with versatile properties have been widely applied in the field of biomedicine. Despite various studies having reviewed the development of biomedical 2D nanomaterials, there is a lack of a study that objectively summarizes and analyzes the research trend of this important field. Here, we employ a series of bibliometric methods to identify the development of the 2D nanomaterial-related biomedical field during the past 10 years from a holistic point of view. First, the annual publication/citation growth, country/institute/author distribution, referenced sources, and research hotspots are identified. Thereafter, based on the objectively identified research hotspots, the contributions of 2D nanomaterials to the various biomedical subfields, including those of biosensing, imaging/therapy, antibacterial treatment, and tissue engineering are carefully explored, by considering the intrinsic properties of the nanomaterials. Finally, prospects and challenges have been discussed to shed light on the future development and clinical translation of 2D nanomaterials. This review provides a novel perspective to identify and further promote the development of 2D nanomaterials in biomedical research.

Functionalized-MXene Thin-Film Nanocomposite Hollow Fiber Membranes for Enhanced PFAS Removal from Water

Due to adverse health effects and the broad sources of per- and polyfluoroakyl substances (PFAS), PFAS removal is a critical research area in water purification. We demonstrate the functionalization of thin-film composite (TFC) hollow fiber nanofiltration (HFN) membranes by MXene nanosheets during the interfacial polymerization (IP) process for enhanced removal of perfluorooctane sulfonic acid (PFOS) from water. A MXene-polyamide (PA) selective layer was fabricated on top of a polysulfone (PSF) hollow fiber support via IP of trimesoyl chloride (TMC) and a mixture of piperazine (PIP) and MXene nanosheets to form MXene-PA thin-film nanocomposite (TFN) membranes. Incorporating MXene nanosheets during the IP process tuned the morphology and negative surface charge of the selective layer, resulting in enhanced PFOS rejection from 72% (bare TFC) to more than 96% (0.025 wt % MXene TFN), while the water permeability was also increased from 13.19 (bare TFC) to 29.26 LMH/bar (0.025 wt % MXene TFN). Our results demonstrate that both electrostatic interaction and size exclusion are the main factors governing the PFOS rejection, and both are determined by PA selective layer structural and chemical properties. The lamella structure and interlayer of MXene nanosheets inside the PA layer provided different transport mechanisms for water, ions, and PFAS molecules, resulting in enhanced water permeability and PFAS rejection due to traveling through the membrane by both diffusions through the PA layer and the MXene intralayer channels. MXene nanosheets showed very promising capability as a 2D additive for tuning the structural and chemical properties of the PA layer at the permeability-rejection tradeoff.

Versatile Gold Telluride Iodide Monolayer as a Potential Photocatalyst for Water Splitting

Two-dimensional materials promise great potential for photochemical water splitting due to the abundant active sites and large surface area, but few of the known materials meet the rigorous requirements. In this work, we systematically investigate structural, electronic, and optical properties of an experimentally unexplored 2D material, i.e., gold telluride iodide (AuTeI) monolayer using density functional theory and Bethe–Salpeter equation approaches. Bulk AuTeI is a layered material and was realized in experiments a few decades ago. However, its bandgap is relatively small for water splitting. We find the exfoliation of monolayer AuTeI from the bulk phase is highly favorable, and 2D AuTeI is dynamically stable. The bandgap of 2D AuTeI becomes larger due to the quantum confinement effect. Importantly, the edge positions of the conduction band minimum and valence band maximum of 2D AuTeI perfectly fit the water oxidation and reduction potentials, enabling it a promising photocatalyst for water splitting. Additionally, the exciton binding energy of 2D AuTeI is calculated to be 0.35 eV, suggesting efficient electron-hole separation. Our results highlight a new and experimentally accessible 2D material for potential application in photocatalytic water splitting.

Electric Transport in Few-Layer ReSe2 Transistors Modulated by Air Pressure and Light

We report the fabrication and optoelectronic characterization of field-effect transistors (FETs) based on few-layer ReSe₂. The devices show n-type conduction due to the Cr contacts that form low Schottky barriers with the ReSe₂ nanosheet. We show that the optoelectronic performance of these FETs is strongly affected by air pressure, and it undergoes a dramatic increase in conductivity when the pressure is lowered below the atmospheric one. Surface-adsorbed oxygen and water molecules are very effective in doping ReSe₂; hence, FETs based on this two-dimensional (2D) semiconductor can be used as an effective air pressure gauge. Finally, we report negative photoconductivity in the ReSe₂ channel that we attribute to a back-gate-dependent trapping of the photo-excited charges.

Highly Sensitive NO2 Gas Sensors Based on MoS2@MoO3 Magnetic Heterostructure

Recently, two-dimensional (2D) materials and their heterostructures have attracted considerable attention in gas sensing applications. In this work, we synthesized 2D MoS₂@MoO₃ heterostructures through post-sulfurization of α-MoO₃ nanoribbons grown via vapor phase transport (VPT) and demonstrated highly sensitive NO₂ gas sensors based on the hybrid heterostructures. The morphological, structural, and compositional properties of the MoS₂@MoO₃ hybrids were studied by a combination of advanced characterization techniques revealing a core-shell structure with the coexistence of 2H-MoS₂ multilayers and intermediate molybdenum oxysulfides on the surface of α-MoO₃. The MoS₂@MoO₃ hybrids also exhibit room-temperature ferromagnetism, revealed by vibrating sample magnetometry (VSM), as a result of the sulfurization process. The MoS₂@MoO₃ gas sensors display a p-type-like response towards NO₂ with a detection limit of 0.15 ppm at a working temperature of 125 °C, as well as superb selectivity and reversibility. This p-type-like sensing behavior is attributed to the heterointerface of MoS₂-MoO₃ where interfacial charge transfer leads to a p-type inversion layer in MoS₂, and is enhanced by magnetic dipole interactions between the paramagnetic NO₂ and the ferromagnetic sensing layer. Our study demonstrates the promising application of 2D molybdenum hybrid compounds in gas sensing applications with a unique combination of electronic and magnetic properties.

Engineering sensitivity and spectral range of photodetection in van der Waals materials and hybrids

Exploration of van der Waals heterostructures in the field of optoelectronics has produced photodetectors with very high bandwidth as well as ultra-high sensitivity. Appropriate engineering of these heterostructures allows us to exploit multiple light-to-electricity conversion mechanisms, ranging from photovoltaic, photoconductive to photogating processes. These mechanisms manifest in different sensitivity and speed of photoresponse. In addition, integrating graphene-based hybrid structures with photonic platforms provides a high gain-bandwidth product, with bandwidths ≫1 GHz. In this review, we discuss the progression in the field of photodetection in 2D hybrids. We emphasize the physical mechanisms at play in diverse architectures and discuss the origin of enhanced photoresponse in hybrids. Recent developments in 2D photodetectors based on room temperature detection, photon-counting ability, integration with Si and other pressing issues, that need to be addressed for these materials to be integrated with industrial standards have been discussed.

Selected Papers from the Second International Online Conference on Nanomaterials

Nanomaterials have gained eminence in technological developments due to their tunable physical, chemical, and biological properties, such as wettability, electrical and thermal conductivity, magnetism, light absorption and emission, catalytic activity, and so forth, leading to devices with improved performance compared to their microscopic counterparts [...]

Promising application of SiC2/C3B heterostructure as a new platform for lithium-ion batteries

Constructing heterostructures by the van der Waals coupling effect has provided an effective method for developing novel electrode materials. In this work, based on the first-principles calculation method, we proposed...

Bonding, structure, and mechanical stability of 2D materials: the predictive power of the periodic table

This tutorial review describes the ongoing effort to convert main-group elements of the periodic table and their combinations into stable 2D materials, which is sometimes called modern 'alchemy'. Theory is successfully approaching this goal, whereas experimental verification is lagging far behind in the synergistic interplay between theory and experiment. The data collected here gives a clear picture of the bonding, structure, and mechanical performance of the main-group elements and their binary compounds. This ranges from group II elements, with two valence electrons, to group VI elements with six valence electrons, which form not only 1D structures but also, owing to their variable oxidation states, low-symmetry 2D networks. Outside of these main groups reviewed here, predominantly ionic bonding may be observed, for example in group II-VII compounds. Besides high-symmetry graphene with its shortest and strongest bonds and outstanding mechanical properties, low-symmetry 2D structures such as various borophene and tellurene phases with intriguing properties are receiving increasing attention. The comprehensive discussion of data also includes bonding and structure of few-layer assemblies, because the electronic properties, e.g., the band gap, of these heterostructures vary with interlayer layer separation and interaction energy. The available data allows the identification of general relationships between bonding, structure, and mechanical stability. This enables the extraction of periodic trends and fundamental rules governing the 2D world, which help to clear up deviating results and to estimate unknown properties. For example, the observed change of the bond length by a factor of two alters the cohesive energy by a factor of four and the extremely sensitive Young's modulus and ultimate strength by more than a factor of 60. Since the stiffness and strength decrease with increasing atom size on going down the columns of the periodic table, it is important to look for suitable allotropes of elements and binaries in the upper rows of the periodic table when mechanical stability and robustness are issues. On the other hand, the heavy compounds are of particular interest because of their low-symmetry structures with exotic electronic properties.

Superior tunable photocatalytic properties for water splitting in two dimensional GeC/SiC van der Waals heterobilayers

The photocatalytic characteristics of two-dimensional (2D) GeC-based van der Waals heterobilayers (vdW-HBL) are systematically investigated to determine the amount of hydrogen (H2) fuel generated by water splitting. We propose several vdW-HBL structures consisting of 2D-GeC and 2D-SiC with exceptional and tunable optoelectronic properties. The structures exhibit a negative interlayer binding energy and non-negative phonon frequencies, showing that the structures are dynamically stable. The electronic properties of the HBLs depend on the stacking configuration, where the HBLs exhibit direct bandgap values of 1.978 eV, 2.278 eV, and 2.686 eV. The measured absorption coefficients for the HBLs are over ~ 105 cm-1, surpassing the prevalent conversion efficiency of optoelectronic materials. In the absence of external strain, the absorption coefficient for the HBLs reaches around 1 × 106 cm-1. With applied strain, absorption peaks are increased to ~ 3.5 times greater in value than the unstrained HBLs. Furthermore, the HBLs exhibit dynamically controllable bandgaps via the application of biaxial strain. A decrease in the bandgap occurs for both the HBLs when applied biaxial strain changes from the compressive to tensile strain. For + 4% tensile strain, the structure I become unsuitable for photocatalytic water splitting. However, in the biaxial strain range of - 6% to + 6%, both structure II and structure III have a sufficiently higher kinetic potential for demonstrating photocatalytic water-splitting activity in the region of UV to the visible in the light spectrum. These promising properties obtained for the GeC/SiC vdW heterobilayers suggest an application of the structures could boost H2 fuel production via water splitting.

Van der Waals Heterostructures-Recent Progress in Electrode Materials for Clean Energy Applications

The unique layered morphology of van der Waals (vdW) heterostructures give rise to a blended set of electrochemical properties from the 2D sheet components. Herein an overview of their potential in energy storage systems in place of precious metals is conducted. The most recent progress on vdW electrocatalysis covering the last three years of research is evaluated, with an emphasis on their catalytic activity towards the oxygen reduction reaction (ORR), oxygen evolution reaction (OER), and hydrogen evolution reaction (HER). This analysis is conducted in pair with the most active Pt-based commercial catalyst currently utilized in energy systems that rely on the above-listed electrochemistry (metal-air battery, fuel cells, and water electrolyzers). Based on current progress in HER catalysis that employs vdW materials, several recommendations can be stated. First, stacking of the two types vdW materials, with one being graphene or its doped derivatives, results in significantly improved HER activity. The second important recommendation is to take advantage of an electronic coupling when stacking 2D materials with the metallic surface. This significantly reduces the face-to-face contact resistance and thus improves the electron transfer from the metallic surface to the vdW catalytic plane. A dual advantage can be achieved from combining the vdW heterostructure with metals containing an excess of d electrons (e.g., gold). Despite these recent and promising discoveries, more studies are needed to solve the complexity of the mechanism of HER reaction, in particular with respect to the electron coupling effects (metal/vdW combinations). In addition, more affordable synthetic pathways allowing for a well-controlled confined HER catalysis are emerging areas.

Air Pressure, Gas Exposure and Electron Beam Irradiation of 2D Transition Metal Dichalcogenides

In this study, we investigate the electrical transport properties of back-gated field-effect transistors in which the channel is realized with two-dimensional transition metal dichalcogenide nanosheets, namely palladium diselenide (PdSe2) and molybdenum disulfide (MoS2). The effects of the environment (pressure, gas type, electron beam irradiation) on the electrical properties are the subject of an intense experimental study that evidences how PdSe2-based devices can be reversibly tuned from a predominantly n-type conduction (under high vacuum) to a p-type conduction (at atmospheric pressure) by simply modifying the pressure. Similarly, we report that, in MoS2-based devices, the transport properties are affected by pressure and gas type. In particular, the observed hysteresis in the transfer characteristics is explained in terms of gas absorption on the MoS2 surface due to the presence of a large number of defects. Moreover, we demonstrate the monotonic (increasing) dependence of the width of the hysteresis on decreasing the gas adsorption energy. We also report the effects of electron beam irradiation on the transport properties of two-dimensional field-effect transistors, showing that low fluences of the order of few e-/nm2 are sufficient to cause appreciable modifications to the transport characteristics. Finally, we profit from our experimental setup, realized inside a scanning electron microscope and equipped with piezo-driven nanoprobes, to perform a field emission characterization of PdSe2 and MoS2 nanosheets at cathode–anode separation distances as small as 200 nm.