Functionalization of Molybdenum Disulfide via Plasma Treatment and 3-Mercaptopropionic Acid for Gas Sensors

Plasma Processing and Treatment of 2D Transition Metal Dichalcogenides: Tuning Properties and Defect Engineering

Two-dimensional transition metal dichalcogenides (TMDs) offer fascinating opportunities for fundamental nanoscale science and various technological applications. They are a promising platform for next generation optoelectronics and energy harvesting devices due to their exceptional characteristics at the nanoscale, such as tunable bandgap and strong light-matter interactions. The performance of TMD-based devices is mainly governed by the structure, composition, size, defects, and the state of their interfaces. Many properties of TMDs are influenced by the method of synthesis so numerous studies have focused on processing high-quality TMDs with controlled physicochemical properties. Plasma-based methods are cost-effective, well controllable, and scalable techniques that have recently attracted researchers' interest in the synthesis and modification of 2D TMDs. TMDs' reactivity toward plasma offers numerous opportunities to modify the surface of TMDs, including functionalization, defect engineering, doping, oxidation, phase engineering, etching, healing, morphological changes, and altering the surface energy. Here we comprehensively review all roles of plasma in the realm of TMDs. The fundamental science behind plasma processing and modification of TMDs and their applications in different fields are presented and discussed. Future perspectives and challenges are highlighted to demonstrate the prominence of TMDs and the importance of surface engineering in next-generation optoelectronic applications.

Solvent-assisted sulfur vacancy engineering method in MoS2 for a neuromorphic synaptic memristor

Recently, two-dimensional transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have attracted great attention due to their unique properties. To modulate the electronic properties and structure of TMDs, it is crucial to precisely control chalcogenide vacancies and several methods have already been suggested. However, they have several limitations such as plasma damage by ion bombardment. Herein, we introduced a novel solvent-assisted vacancy engineering (SAVE) method to modulate sulfur vacancies in MoS2. Considering polarity and the Hansen solubility parameter (HSP), three solvents were selected. Sulfur vacancies can be modulated by immersing MoS2 in each solvent, supported by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy analyses. The SAVE method can further expand its application in memory devices representing memristive performance and synaptic behaviors. We represented the charge transport mechanism of sulfur vacancy migration in MoS2. The non-destructive, scalable, and novel SAVE method controlling sulfur vacancies is expected to be a guideline for constructing a vacancy engineering system of TMDs.

CTAB Enhanced Room-Temperature Detection of NO2 Based on MoS2-Reduced Graphene Oxide Nanohybrid

A new NO2 nanohybrid of a gas sensor (CTAB-MoS2/rGO) was constructed for sensitive room-temperature detection of NO2 by 3D molybdenum disulfide (MoS2) and reduced graphene oxide (rGO), assisted with hexadecyl trimethyl ammonium bromide (CTAB). In comparison with MoS2 and MoS2/rGO, the BET and SEM characterization results depicted the three-dimensional structure of the CTAB-MoS2/rGO nanohybrid, which possessed a larger specific surface area to provide more active reaction sites to boost its gas-sensing performance. Observations of the gas-sensing properties indicated that the CTAB-MoS2/rGO sensor performed a high response of 45.5% for 17.5 ppm NO2, a remarkable selectivity of NO2, an ultra-low detection limit of 26.55 ppb and long-term stability for a 30-day measurement. In addition, the response obtained for the CTAB-MoS2/rGO sensor was about two to four times that obtained for the MoS2/rGO sensor and the MoS2 sensor toward 8 ppm NO2, which correlated with the heterojunction between MoS2 and rGO, and the improvement in surface area and conductivity correlated with the introduction of CTAB and rGO. The excellent performance of the CTAB-MoS2/rGO sensor further suggested the advantage of CTAB in assisting a reliable detection of trace NO2 and an alternative method for highly efficiently detecting NO2 in the environment.

2D Molybdenum Sulfide-Based Materials for Photo-Excited Antibacterial Application

Bacterial infections have seriously threatened human health and the abuse of natural or artificial antibiotics leads to bacterial resistance, so development of a new generation of antibacterial agents and treatment methods is urgent. 2D molybdenum sulfide (MoS₂ ) has good biocompatibility, high specific surface area to facilitate surface modification and drug loading, adjustable energy bandgap, and high near-infrared photothermal conversion efficiency (PCE), so it is often used for antibacterial application through its photothermal or photodynamic effects. This review comprehensively summarizes and discusses the fabrication processes, structural characteristics, antibacterial performance, and the corresponding mechanisms of MoS₂ -based materials as well as their representative antibacterial applications. In addition, the outlooks on the remaining challenges that should be addressed in the field of MoS₂ are also proposed.