Color Centers Enabled by Direct Femto-Second Laser Writing in Wide Bandgap Semiconductors

Photonic-Cavity-Enhanced Laser Writing of Color Centers in Diamond

Color centers in diamond have widespread utility in quantum technologies, but their creation process remains stochastic in nature. Deterministic creation of color centers in device-ready diamond platforms can improve the yield, scalability, and integration. Recent work using pulsed laser excitation has shown impressive progress in deterministically creating defects in bulk diamond. Here, we extend this laser-writing process into nanophotonic devices etched into diamond membranes, including nanopillars and photonic resonators with writing and subsequent readout occurring in situ at cryogenic temperatures. We demonstrate the optically driven creation of carbon vacancy (GR1) and nitrogen vacancy (NV) centers in diamond nanopillars and observe enhanced photoluminescence collection from them. We also fabricate bullseye resonators and leverage their cavity modes to locally amplify the laser-writing field, yielding defect creation with picojoule write-pulse energies 100 times lower than those typically used in bulk diamond demonstrations.

Selective Generation of V2 Silicon Vacancy Centers in 4H-Silicon Carbide

The deterministic generation of individual color centers with defined orientations or types in solid-state systems is paramount for advancements in quantum technologies. Silicon vacancies in 4H-silicon carbide (4H-SiC) can be formed in V1 and V2 types. However, silicon vacancies are typically generated randomly between V1 and V2 types with similar probabilities. Here, we show that the preferred V2 centers can be selectively generated by focused ion beam (FIB) implantation on the m-plane in 4H-SiC. When implantation is on the m-plane (a-plane), the generation probability ratio between V1 and V2 centers increase exponentially (remains constant) with decreasing FIB fluences. With a fluence of 10 ions/spot, the probability to generate V2 centers is seven times higher than V1 centers. Our results represent a critical step toward the deterministic creation of specific defect types.

Photoluminescent Microbit Inscripion Inside Dielectric Crystals by Ultrashort Laser Pulses for Archival Applications

Inscription of embedded photoluminescent microbits inside micromechanically positioned bulk natural diamond, LiF and CaF₂ crystals was performed in sub-filamentation (geometrical focusing) regime by 525 nm 0.2 ps laser pulses focused by 0.65 NA micro-objective as a function of pulse energy, exposure and inter-layer separation. The resulting microbits were visualized by 3D-scanning confocal Raman/photoluminescence microscopy as conglomerates of photo-induced quasi-molecular color centers and tested regarding their spatial resolution and thermal stability via high-temperature annealing. Minimal lateral and longitudinal microbit separations, enabling their robust optical read-out through micromechanical positioning, were measured in the most promising crystalline material, LiF, as 1.5 and 13 microns, respectively, to be improved regarding information storage capacity by more elaborate focusing systems. These findings pave a way to novel optomechanical memory storage platforms, utilizing ultrashort-pulse laser inscription of photoluminescent microbits as carriers of archival memory.

Laser writing of spin defects in nanophotonic cavities

High-yield engineering and characterization of cavity-emitter coupling is an outstanding challenge in developing scalable quantum network nodes. Ex situ defect formation systems prevent real-time analysis, and previous in situ methods are limited to bulk substrates or require further processing to improve the emitter properties^1-6. Here we demonstrate the direct laser writing of cavity-integrated spin defects using a nanosecond pulsed above-bandgap laser. Photonic crystal cavities in 4H-silicon carbide serve as a nanoscope monitoring silicon-monovacancy defect formation within the approximately 200 nm³ cavity-mode volume. We observe spin resonance, cavity-integrated photoluminescence and excited-state lifetimes consistent with conventional defect formation methods, without the need for post-irradiation thermal annealing. We further find an exponential reduction in excited-state lifetime at fluences approaching the cavity amorphization threshold and show the single-shot annealing of intrinsic background defects at silicon-monovacancy formation sites. This real-time in situ method of localized defect formation, paired with cavity-integrated defect spins, is necessary towards engineering cavity-emitter coupling for quantum networking.

Quantum Emitters with Narrow Band and High Debye-Waller Factor in Aluminum Nitride Written by Femtosecond Laser

Solid-state quantum emitters (QEs) are central components for photonic-based quantum information processing. Recently, bright QEs in III-nitride semiconductors, such as aluminum nitride (AlN), have attracted increasing interest because of the mature commercial application of the nitrides. However, the reported QEs in AlN suffer from broad phonon side bands (PSBs) and low Debye-Waller factors. Meanwhile, there is also a need for more reliable fabrication methods of AlN QEs for integrated quantum photonics. Here, we demonstrate that laser-induced QEs in AlN exhibit robust emission with a strong zero phonon line, narrow line width, and weak PSB. The creation yield of a single QE could be more than 50%. More importantly, they have a high Debye-Waller factor (>65%) at room temperature, which is the highest result among reported AlN QEs. Our results illustrate the potential of laser writing to create high-quality QEs for quantum technologies and provide further insight into laser writing defects in relevant materials.

Metal-Dielectric Nanopillar Antenna-Resonators for Efficient Collected Photon Rate from Silicon Carbide Color Centers

A yet unresolved challenge in developing quantum technologies based on color centres in high refractive index semiconductors is the efficient fluorescence enhancement of point defects in bulk materials. Optical resonators and antennas have been designed to provide directional emission, spontaneous emission rate enhancement and collection efficiency enhancement at the same time. While collection efficiency enhancement can be achieved by individual nanopillars or nanowires, fluorescent emission enhancement is achieved using nanoresonators or nanoantennas. In this work, we optimise the design of a metal-dielectric nanopillar-based antenna/resonator fabricated in a silicon carbide (SiC) substrate with integrated quantum emitters. Here we consider various color centres known in SiC such as silicon mono-vacancy and the carbon antisite vacancy pair, that show single photon emission and quantum sensing functionalities with optical electron spin read-out, respectively. We model the dipole emission fluorescence rate of these color centres into the metal-dielectric nanopillar hybrid antenna resonator using multi-polar electromagnetic scattering resonances and near-field plasmonic field enhancement and confinement. We calculate the fluorescence collected photon rate enhancement for these solid state vacancy-centers in SiC in these metal-dielectric nanopillar resonators, showing a trade-off effect between the collection efficiency and radiative Purcell factor enhancement. We obtained a collected photon rate enhancement from a silicon monovacancy vacancy center embedded in an optimised hybrid antenna-resonator two orders of magnitude larger compared to the case of the color centres in bulk material.

"Stealth Scripts": Ultrashort Pulse Laser Luminescent Microscale Encoding of Bulk Diamonds via Ultrafast Multi-Scale Atomistic Structural Transformations

The ultrashort-laser photoexcitation and structural modification of buried atomistic optical impurity centers in crystalline diamonds are the key enabling processes in the fabrication of ultrasensitive robust spectroscopic probes of electrical, magnetic, stress, temperature fields, and single-photon nanophotonic devices, as well as in "stealth" luminescent nano/microscale encoding in natural diamonds for their commercial tracing. Despite recent remarkable advances in ultrashort-laser predetermined generation of primitive optical centers in diamonds even on the single-center level, the underlying multi-scale basic processes, rather similar to other semiconductors and dielectrics, are almost uncovered due to the multitude of the involved multi-scale ultrafast and spatially inhomogeneous optical, electronic, thermal, and structural elementary events. We enlighten non-linear wavelength-, polarization-, intensity-, pulsewidth-, and focusing-dependent photoexcitation and energy deposition mechanisms in diamonds, coupled to the propagation of ultrashort laser pulses and ultrafast off-focus energy transport by electron-hole plasma, transient plasma- and hot-phonon-induced stress generation and the resulting variety of diverse structural atomistic modifications in the diamond lattice. Our findings pave the way for new forthcoming groundbreaking experiments and comprehensive enlightening two-temperature and/or atomistic modeling both in diamonds and other semiconductor/dielectric materials, as well as innovative technological breakthroughs in the field of single-photon source fabrication and "stealth" luminescent nano/microencoding in bulk diamonds for their commercial tracing.

Large-Scale, High-Yield Laser Fabrication of Bright and Pure Single-Photon Emitters at Room Temperature in Hexagonal Boron Nitride

Single-photon emitters (SPEs) play an important role in many optical quantum technologies. However, an efficient large-scale approach to the generation of high-quality SPE arrays remains an elusive goal at room temperature. Here, we demonstrate a scalable method of generating SPE arrays in hexagonal boron nitride (hBN) with high yield, brightness, and purity using single-pulse irradiation by a femtosecond laser. Our use of a single pulse per defect pattern minimized heat-related damages and improved the purity of SPEs compared with the previous laser-based approaches. Under the optimized fabrication and post-treatment conditions, SPE arrays were successfully generated from the 3.0 μm defect patterns with 43% yield, the highest among the 2D-based top-down approaches. Importantly, we found that 100% of the bright defect patterns are SPEs with g²(0) < 0.5 under such conditions, with the lowest g²(0) = 0.06 ± 0.03. Our SPEs also exhibit the highest brightness with the saturation SPE rate at 7.15 million counts per second. We believe that our overall high-quality and large-scale approach will help a wide range of applications of SPEs in on-chip quantum technologies.

Femtosecond laser nanostructuring on a 4H-SiC surface by tailoring the induced self-assembled nanogratings

Ultrafast laser micromachining of crystalline silicon carbide (SiC) has great perspectives in aerospace industry and integrated circuit technique. In this report, we present a study of femtosecond laser nanostructuring on the surface of an n-type 4H-SiC single crystal. Except for uniform nanogratings, new types of large-area periodic structures including nanoparticle array and nanoparticle-nanograting hybrid structures were induced on the surface of 4H-SiC by scanning irradiation. The effects of pulse energy, scan speed, and the polarization direction on the morphology and periodicity of nanogratings were systematically explored. The proper parameter window for nanograting formation in pulse energy-scan speed landscape is depicted. Both the uniformity and the periodicity of the induced nanogratings are polarization dependent. A planar light attenuator for linear polarized light was demonstrated by aligning the nanogratings. The transition between different large-area periodic structures is achieved by simultaneous control of pulse energy and scan interval using a cross scan strategy. These results are expected to open up an avenue to create and manipulate periodic nanostructures on SiC crystals for photonic applications.

High-power modelocked thin-disk oscillators as potential technology for high-rate material processing

High average power femtosecond lasers have made spectacular progress in the last decades - moving from laboratory-based systems with maximum average powers of tens of watts to kilowatt-class mature industrial systems in a short time. The availability of such systems opens new possibilities in many fields; one of the most prominent ones that have driven many of these technological advances is precise high-speed material processing, where ultrashort pulses have long been recognized to provide highest precision processing of virtually any material, and high average power extends these capabilities to highest processing rates. Here, we focus our attention on one high-average power technology with large unexplored potential for this specific application: directly modelocked multi-MHz repetition frequency high-power thin-disk oscillators. We review their latest state-of-the-art and discuss future directions and challenges, specifically with this application field in mind.

Photopolymerization strategy for the preparation of small-diameter artificial blood vessels with micro-nano structures on the inner wall

Although large diameter vessels made of polyurethane materials have been widely used in clinical practice, the biocompatibility and long-term patency of small diameter artificial vessels have not been well addressed. Any technological innovation and advancement in small-diameter artificial blood vessels is of great interest to the biomedical field. Here a novel technique is used to produce artificial blood vessels with a caliber of less than 6 mm and a wall thickness of less than 0.5 mm by rotational exposure, and to form a bionic inner wall with a periodically micro-nano structure inside the tube by laser double-beam interference. The polyethylene glycol diacrylate used is a widely recognized versatile biomaterial with good hydrophilicity, biocompatibility and low cytotoxicity. The effect of the bionic structure on the growth of hepatocellular carcinoma cells and human umbilical vein endothelial cells was investigated, and it was demonstrated that the prepared vessels with the bionic structure could largely promote the endothelialization process of the cells inside them.