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Bai C, Wu G, Yang J, Zeng J, Liu Y, Wang J. 2D materials-based photodetectors combined with ferroelectrics. NANOTECHNOLOGY 2024; 35:352001. [PMID: 38697050 DOI: 10.1088/1361-6528/ad4652] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/14/2023] [Accepted: 05/01/2024] [Indexed: 05/04/2024]
Abstract
Photodetectors are essential optoelectronic devices that play a critical role in modern technology by converting optical signals into electrical signals, which are one of the most important sensors of the informational devices in current 'Internet of Things' era. Two-dimensional (2D) material-based photodetectors have excellent performance, simple design and effortless fabrication processes, as well as enormous potential for fabricating highly integrated and efficient optoelectronic devices, which has attracted extensive research attention in recent years. The introduction of spontaneous polarization ferroelectric materials further enhances the performance of 2D photodetectors, moreover, companying with the reduction of power consumption. This article reviews the recent advances of materials, devices in ferroelectric-modulated photodetectors. This review starts with the introduce of the basic terms and concepts of the photodetector and various ferroelectric materials applied in 2D photodetectors, then presents a variety of typical device structures, fundamental mechanisms and potential applications under ferroelectric polarization modulation. Finally, we summarize the leading challenges currently confronting ferroelectric-modulated photodetectors and outline their future perspectives.
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Affiliation(s)
- Chongyang Bai
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Guangjian Wu
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, People's Republic of China
| | - Jing Yang
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
- Chongqing Key Laboratory of Precision Optics, Chongqing Institute of East China Normal University, Chongqing 401120, People's Republic of China
| | - Jinhua Zeng
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, People's Republic of China
| | - Yihan Liu
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, People's Republic of China
| | - Jianlu Wang
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, People's Republic of China
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Chen Z, Huang J, Yang M, Liu X, Zheng Z, Huo N, Han L, Luo D, Li J, Gao W. Bi 2O 2Se Nanowire/MoSe 2 Mixed-Dimensional Polarization-Sensitive Photodiode with a Nanoscale Ultrafast-Response Channel. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37335909 DOI: 10.1021/acsami.3c05283] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/21/2023]
Abstract
In recent years, polarization-sensitive photodiodes based on one-dimensional/two-dimensional (1D/2D) van der Waals (vdWs) heterostructures have garnered significant attention due to the high specific surface area, strong orientation degree of 1D structures, and large photo-active area and mechanical flexibility of 2D structures. Therefore, they are applicable in wearable electronics, electrical-driven lasers, image sensing, optical communication, optical switches, etc. Herein, 1D Bi2O2Se nanowires have been successfully synthesized via chemical vapor deposition. Impressively, the strongest Raman vibration modes can be achieved along the short edge (y-axis) of Bi2O2Se nanowires with high crystalline quality, which originate from Se and Bi vacancies. Moreover, the Bi2O2Se/MoSe2 photodiode designed with type-II band alignment demonstrates a high rectification ratio of 103. Intuitively, the photocurrent peaks are mainly distributed in the overlapped region under the self-powered mode and reverse bias, within the wavelength range of 400-nm. The resulting device exhibits excellent optoelectrical performances, including high responsivities (R) and fast response speed of 656 mA/W and 350/380 μs (zero bias) and 17.17 A/W and 100/110 μs (-1 V) under 635 nm illumination, surpassing the majority of reported mixed-dimensional photodiodes. The most significant feature of our photodiode is its highest photocurrent anisotropic ratio of ∼2.2 (-0.8 V) along the long side (x-axis) of Bi2O2Se nanowires under 635 nm illumination. The above results reveal a robust and distinctive correlation between structural defects and polarized orientation for 1D Bi2O2Se nanowires. Furthermore, 1D Bi2O2Se nanowires appear to be a great potential candidate for high-performance rectifiers, polarization-sensitive photodiodes, and phototransistors based on mixed vdWs heterostructures.
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Affiliation(s)
- Zecheng Chen
- Huangpu Hydrogen Innovation Center/Guangzhou Key Laboratory for Clean Energy and Materials, School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou 510006, P. R. China
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 528225, P. R. China
| | - Jianming Huang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 528225, P. R. China
| | - Mengmeng Yang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 528225, P. R. China
| | - Xiao Liu
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 528225, P. R. China
| | - Zhaoqiang Zheng
- College of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Nengjie Huo
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 528225, P. R. China
| | - Lixiang Han
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 528225, P. R. China
| | - Dongxiang Luo
- Huangpu Hydrogen Innovation Center/Guangzhou Key Laboratory for Clean Energy and Materials, School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou 510006, P. R. China
| | - Jingbo Li
- College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Wei Gao
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 528225, P. R. China
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Tovar-Lopez FJ. Recent Progress in Micro- and Nanotechnology-Enabled Sensors for Biomedical and Environmental Challenges. SENSORS (BASEL, SWITZERLAND) 2023; 23:5406. [PMID: 37420577 DOI: 10.3390/s23125406] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/10/2023] [Revised: 06/01/2023] [Accepted: 06/05/2023] [Indexed: 07/09/2023]
Abstract
Micro- and nanotechnology-enabled sensors have made remarkable advancements in the fields of biomedicine and the environment, enabling the sensitive and selective detection and quantification of diverse analytes. In biomedicine, these sensors have facilitated disease diagnosis, drug discovery, and point-of-care devices. In environmental monitoring, they have played a crucial role in assessing air, water, and soil quality, as well as ensured food safety. Despite notable progress, numerous challenges persist. This review article addresses recent developments in micro- and nanotechnology-enabled sensors for biomedical and environmental challenges, focusing on enhancing basic sensing techniques through micro/nanotechnology. Additionally, it explores the applications of these sensors in addressing current challenges in both biomedical and environmental domains. The article concludes by emphasizing the need for further research to expand the detection capabilities of sensors/devices, enhance sensitivity and selectivity, integrate wireless communication and energy-harvesting technologies, and optimize sample preparation, material selection, and automated components for sensor design, fabrication, and characterization.
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Pan R, Cai Y, Zhang F, Wang S, Chen L, Feng X, Ha Y, Zhang R, Pu M, Li X, Ma X, Luo X. High Performance Graphene-C 60 -Bismuth Telluride-C 60 -Graphene Nanometer Thin Film Phototransistor with Adjustable Positive and Negative Responses. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2206997. [PMID: 36748286 PMCID: PMC10074057 DOI: 10.1002/advs.202206997] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/28/2022] [Revised: 01/12/2023] [Indexed: 06/18/2023]
Abstract
Graphene is a promising candidate for the next-generation infrared array image sensors at room temperature due to its high mobility, tunable energy band, wide band absorption, and compatibility with complementary metal oxide semiconductor process. However, it is difficult to simultaneously obtain ultrafast response time and ultrahigh responsivity, which limits the further improvement of graphene photoconductive devices. Here, a novel graphene/C60 /bismuth telluride/C60 /graphene vertical heterojunction phototransistor is proposed. The response spectral range covers 400-1800 nm; the responsivity peak is 106 A W-1 ; and the peak detection rate and peak response speed reach 1014 Jones and 250 µs, respectively. In addition, the regulation of positive and negative photocurrents at a gate voltage is characterized and the ionization process in impurities of the designed phototransistor at a low temperature is analyzed. Tunable bidirectional response provides a new degree of freedom for phototransistors' signal resolution. The analysis of the dynamic change process of impurity energy level is conducted to improve the device's performance. From the perspective of manufacturing process, the ultrathin phototransistor (20-30 nm) is compatible with functional metasurface to realize wavelength or polarization selection, making it possible to achieve large-scale production of integrated spectrometer or polarization imaging sensor by nanoimprinting process.
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Affiliation(s)
- Rui Pan
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209P. R. China
- Division of Frontier Science and TechnologyInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209P. R. China
| | - Yuanlingyun Cai
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209P. R. China
- School of OptoelectronicsUniversity of Chinese Academy of SciencesBeijing100049P. R. China
| | - Feifei Zhang
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209P. R. China
| | - Si Wang
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209P. R. China
| | - Lianwei Chen
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209P. R. China
| | - Xingdong Feng
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209P. R. China
- School of OptoelectronicsUniversity of Chinese Academy of SciencesBeijing100049P. R. China
| | - Yingli Ha
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209P. R. China
- School of OptoelectronicsUniversity of Chinese Academy of SciencesBeijing100049P. R. China
- Research Center on Vector Optical FieldsInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209P. R. China
| | - Renyan Zhang
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209P. R. China
- Division of Frontier Science and TechnologyInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209P. R. China
| | - Mingbo Pu
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209P. R. China
- School of OptoelectronicsUniversity of Chinese Academy of SciencesBeijing100049P. R. China
- Research Center on Vector Optical FieldsInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209P. R. China
| | - Xiong Li
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209P. R. China
- School of OptoelectronicsUniversity of Chinese Academy of SciencesBeijing100049P. R. China
| | - Xiaoliang Ma
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209P. R. China
- School of OptoelectronicsUniversity of Chinese Academy of SciencesBeijing100049P. R. China
| | - Xiangang Luo
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209P. R. China
- School of OptoelectronicsUniversity of Chinese Academy of SciencesBeijing100049P. R. China
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Gebremichael ZT, Ugokwe C, Alam S, Stumpf S, Diegel M, Schubert US, Hoppe H. How varying surface wettability of different PEDOT:PSS formulations and their mixtures affects perovskite crystallization and the efficiency of inverted perovskite solar cells. RSC Adv 2022; 12:25593-25604. [PMID: 36199329 PMCID: PMC9453573 DOI: 10.1039/d2ra03843a] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/22/2022] [Accepted: 08/31/2022] [Indexed: 11/21/2022] Open
Abstract
The physico-chemical interaction, surface, and electrical properties of hole transport layers (HTLs) significantly affect the wettability and film crystallization of the deposited perovskite and the corresponding performance of inverted perovskite solar cells (PSCs). One of the most frequently used HTLs for inverted PSCs is poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS). Various commercial PEDOT:PSS formulations have already been tested as HTLs. Until now mixtures of these remained rather unexplored. In this study, three commercially available PEDOT:PSS formulations (PH, PH1000, and AI4083), as well as three mixtures (PH:PH1000, PH:AI4083, and PH:PH1000:AI4083; in a 1 : 1 and 1 : 1 : 1 ratios) were used as HTLs to investigate the crystallization of perovskite films and the performance of associated PSCs. Of the three formulations, PEDOT:PSS PH showed better perovskite crystallization, resulting in better solar cell performance followed by both PH:AI4083 and PH:PH1000:AI4083 layers. The pioneering work on mixing PEDOT:PSS resulted in new combinations of PEDOT:PSS, with new properties (work function, surface wettability, and roughness) which are very important parameters for perovskite crystallization and corresponding device efficiencies and stabilities. All PSCs that use the mixed PEDOT:PSS as HTLs revealed higher fill factor and open-circuit voltage values above 900 mV, which is not the same except for PEDOT:PSS PH. As a result, we believe that such a mixing strategy could aid in the creation of various PEDOT:PSS combinations with tuneable properties for certain applications.
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Affiliation(s)
- Zekarias Teklu Gebremichael
- Laboratory of Organic and Macromolecular Chemistry (IOMC), Friedrich Schiller University Jena Humboldt Str. 10 07743 Jena Germany
- Center for Energy and Environmental Chemistry Jena (CEEC Jena), Friedrich Schiller University Jena Philosophenweg 7a 07743 Jena Germany
- College of Natural and Computational Science, Aksum University P.O. Box 1010 Aksum City Tigray Ethiopia
| | - Chikezie Ugokwe
- Laboratory of Organic and Macromolecular Chemistry (IOMC), Friedrich Schiller University Jena Humboldt Str. 10 07743 Jena Germany
- Center for Energy and Environmental Chemistry Jena (CEEC Jena), Friedrich Schiller University Jena Philosophenweg 7a 07743 Jena Germany
| | - Shahidul Alam
- Laboratory of Organic and Macromolecular Chemistry (IOMC), Friedrich Schiller University Jena Humboldt Str. 10 07743 Jena Germany
- Center for Energy and Environmental Chemistry Jena (CEEC Jena), Friedrich Schiller University Jena Philosophenweg 7a 07743 Jena Germany
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Physical Sciences and Engineering Division (PSE) Thuwal 23955-6900 Kingdom of Saudi Arabia
| | - Steffi Stumpf
- Laboratory of Organic and Macromolecular Chemistry (IOMC), Friedrich Schiller University Jena Humboldt Str. 10 07743 Jena Germany
- Jena Center for Soft Matter (JCSM), Friedrich Schiller University Jena Philosophenweg 7 07743 Jena Germany
| | - Marco Diegel
- Leibniz Institute of Photonics Technology D-07745 Jena Germany
| | - Ulrich S Schubert
- Laboratory of Organic and Macromolecular Chemistry (IOMC), Friedrich Schiller University Jena Humboldt Str. 10 07743 Jena Germany
- Center for Energy and Environmental Chemistry Jena (CEEC Jena), Friedrich Schiller University Jena Philosophenweg 7a 07743 Jena Germany
- Jena Center for Soft Matter (JCSM), Friedrich Schiller University Jena Philosophenweg 7 07743 Jena Germany
| | - Harald Hoppe
- Laboratory of Organic and Macromolecular Chemistry (IOMC), Friedrich Schiller University Jena Humboldt Str. 10 07743 Jena Germany
- Center for Energy and Environmental Chemistry Jena (CEEC Jena), Friedrich Schiller University Jena Philosophenweg 7a 07743 Jena Germany
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Recent Progress on Graphene Flexible Photodetectors. MATERIALS 2022; 15:ma15144820. [PMID: 35888288 PMCID: PMC9318373 DOI: 10.3390/ma15144820] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/14/2022] [Revised: 06/18/2022] [Accepted: 06/29/2022] [Indexed: 01/02/2023]
Abstract
In recent years, optoelectronics and related industries have developed rapidly. As typical optoelectronics devices, photodetectors (PDs) are widely applied in various fields. The functional materials in traditional PDs exhibit high hardness, and the performance of these rigid detectors is thus greatly reduced upon their stretching or bending. Therefore, the development of new flexible PDs with bendable and foldable functions is of great significance and has much interest in wearable, implantable optoelectronic devices. Graphene with excellent electrical and optical performance constructed on various flexible and rigid substrates has great potential in PDs. In this review, recent research progress on graphene-based flexible PDs is outlined. The research states of graphene conductive films are summarized, focusing on PDs based on single-component graphene and mixed-structure graphene, with a systematic analysis of their optical and mechanical performance, and the techniques for optimizing the PDs are also discussed. Finally, a summary of the current applications of graphene flexible PDs and perspectives is provided, and the remaining challenges are discussed.
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Yin Q, Si G, Li J, Wali S, Ren J, Guo J, Zhang H. Self-powered topological insulator Bi 2Te 3/Ge heterojunction photodetector driven by long-lived excitons transfer. NANOTECHNOLOGY 2022; 33:255502. [PMID: 35290961 DOI: 10.1088/1361-6528/ac5df7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/08/2021] [Accepted: 03/15/2022] [Indexed: 06/14/2023]
Abstract
Due to the wide spectral absorption and ultrafast electron dynamical response under optical excitation, topological insulator (TI) was proposed to have appealing application in next-generation photonic and optoelectronic devices. Whereas, the bandgap-free speciality of Dirac surface states usually leads to a quick relaxation of photoexcited carriers, making the transient excitons difficult to manipulate in isolated TIs. Growth of TI Bi2Te3/Ge heterostructures can promote the specific lifetime and quantity of long-lived excitons, offering the possibility of designing original near-infrared optoelectronic devices, however, the construction of TI Bi2Te3/Ge heterostructures has yet to be investigated. Herein, the high-quality Bi2Te3/Ge heterojunction with clear interface was prepared by physical vapor deposition strategy. A significant photoluminescence quenching behaviour was observed by experiments, which was attributed to the spontaneous excitation transfer of electrons at heterointerface via theoretical analysis. Then, a self-powered heterostructure photodetector was fabricated, which demonstrated a maximal detectivity of 1.3 × 1011Jones, an optical responsivity of 0.97 A W-1, and ultrafast photoresponse speed (12.1μs) under 1064 nm light illumination. This study offers a fundamental understanding of the spontaneous interfacial exciton transfer of TI-based heterostructures, and the as-fabricated photodetectors with excellent performance provided an important step to meet the increasing demand for novel optoelectronic applications in the future.
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Affiliation(s)
- Qin Yin
- School of Physics and Electronics, Shandong Normal University, Jinan, Shandong 250014, People's Republic of China
| | - Guoxiang Si
- School of Physics and Electronics, Shandong Normal University, Jinan, Shandong 250014, People's Republic of China
| | - Jiao Li
- School of Physics and Electronics, Shandong Normal University, Jinan, Shandong 250014, People's Republic of China
| | - Sartaj Wali
- School of Physics and Electronics, Shandong Normal University, Jinan, Shandong 250014, People's Republic of China
| | - Junfeng Ren
- School of Physics and Electronics, Shandong Normal University, Jinan, Shandong 250014, People's Republic of China
| | - Jiatian Guo
- School of Physics and Electronics, Shandong Normal University, Jinan, Shandong 250014, People's Republic of China
| | - Hongbin Zhang
- School of Physics and Electronics, Shandong Normal University, Jinan, Shandong 250014, People's Republic of China
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