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Banik S, Das A, Das BK, Islam N. Numerical simulation and performance optimization of a lead-free inorganic perovskite solar cell using SCAPS-1D. Heliyon 2024; 10:e23985. [PMID: 38268575 PMCID: PMC10805918 DOI: 10.1016/j.heliyon.2024.e23985] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/08/2022] [Revised: 12/22/2023] [Accepted: 01/02/2024] [Indexed: 01/26/2024] Open
Abstract
The perovskite solar cells, founded on lead halides, have garnered significant attention from the photovoltaic industry owing to their superior efficiency, ease of production, lightweight characteristics, and affordability. However, due to the hazardous nature of lead-based compounds, these solar cells are currently unsuitable for commercial production. In this context, a lead-free perovskite, cesium-bismuth iodide (Cs3Bi2I9) is considered as a potential alternative to the lead halide-based cell due to their non-toxicity and stability, but this perovskite cannot be matched with random hole transport layer (HTL) and electron transport layer (ETL) materials compared to lead halide-based perovskite because of their crystal structure and band gap. Therefore, in this study, performance comparison of different ideal HTL and ETL materials for Cs3Bi2I9 perovskite layer were studied using SCAPS-1D device simulation on the basis of open circuit voltage, short circuit current, power conversion efficiency (PCE) and fill factor (FF) as well as several novel PSC configuration models were designed that can direct for further experimental research for PSC device commercialization. Results from this investigation reveals that the maximum efficiency of 20.96 % is obtained for the configuration ITO/WS2/Cs3Bi2I9/NiO/Au with optimized parameters such as thickness 400 nm, band gap 2.1eV, absorber layer defect density 1012 cm-3, donor density of ETL 1018 cm-3 and the acceptor density of HTL 1020 cm-3.
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Affiliation(s)
- Sujan Banik
- Department of Mechanical Engineering, Rajshahi University of Engineering and Technology, Rajshahi-6204, Bangladesh
| | - Arnob Das
- Department of Mechanical Engineering, Rajshahi University of Engineering and Technology, Rajshahi-6204, Bangladesh
| | - Barun K. Das
- Department of Mechanical Engineering, Rajshahi University of Engineering and Technology, Rajshahi-6204, Bangladesh
| | - Nurul Islam
- Department of Mechanical Engineering, Rajshahi University of Engineering and Technology, Rajshahi-6204, Bangladesh
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Moiz SA, Alshaikh MS, Alahmadi ANM. Simulation Design of Novel Non-Fluorine Polymers as Electron Transport Layer for Lead-Free Perovskite Solar Cells. Polymers (Basel) 2023; 15:4387. [PMID: 38006111 PMCID: PMC10675704 DOI: 10.3390/polym15224387] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/14/2023] [Revised: 11/07/2023] [Accepted: 11/09/2023] [Indexed: 11/26/2023] Open
Abstract
Significant progress has been made in the advancement of perovskite solar cells, but their commercialization remains hindered by their lead-based toxicity. Many non-toxic perovskite-based solar cells have demonstrated potential, such as Cs2AgBi0.75Sb0.25Br6, but their power conversion efficiency is inadequate. To address this issue, some researchers are focusing on emerging acceptor-donor-acceptor'-donor-acceptor (A-DA'D-A)-type non-fullerene acceptors (NFAs) for Cs2AgBi0.75Sb0.25Br6 to find effective electron transport layers for high-performance photovoltaic responses with low voltage drops. In this comparative study, four novel A-DA'D-A-type NFAs, BT-LIC, BT-BIC, BT-L4F, and BT-BO-L4F, were used as electron transport layers (ETLs) for the proposed devices, FTO/PEDOT:PSS/Cs2AgBi0.75Sb0.25Br6/ETL/Au. Comprehensive simulations were conducted to optimize the devices. The simulations showed that all optimized devices exhibit photovoltaic responses, with the BT-BIC device having the highest power conversion efficiency (13.2%) and the BT-LIC device having the lowest (6.8%). The BT-BIC as an ETL provides fewer interfacial traps and better band alignment, enabling greater open-circuit voltage for efficient photovoltaic responses.
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Affiliation(s)
- Syed Abdul Moiz
- Device Simulation Laboratory, Department of Electrical Engineering, College of Engineering and Islamic Architecture, Umm Al-Qura University, Makkah 21955, Saudi Arabia; (M.S.A.); (A.N.M.A.)
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Ranjan R, Anand N, Tripathi MN, Srivastava N, Sharma AK, Yoshimura M, Chang L, Tiwari RN. SCAPS study on the effect of various hole transport layer on highly efficient 31.86% eco-friendly CZTS based solar cell. Sci Rep 2023; 13:18411. [PMID: 37891269 PMCID: PMC10611726 DOI: 10.1038/s41598-023-44845-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/27/2023] [Accepted: 10/12/2023] [Indexed: 10/29/2023] Open
Abstract
Copper Zinc Tin Sulphide (CZTS) is a propitious semiconductor for active absorber material in thin-film solar cells (SCs). Here, SC architecture comprising FTO/ZnS/CZTS/variable HTLs/Au is discussed. Fluorine-doped tin oxide (FTO) and gold (Au) are used as front and back contacts, respectively. Zinc sulphide (ZnS) is used as an active electron transport layer (ETL), while different Cu-based materials (Cu2O, CuO, CuI, and CuSCN) are used as hole transport layers (HTL). A one-dimensional solar cell capacitance simulator (SCAPS-1D) is utilized to simulate the SC structure. Among different Cu-based HTLs, Cu2O is preferred as a potential candidate for high cell performance of CZTS-based SC. The effects of various layer parameters such as thickness, doping density, and carrier concentrations, electron affinity of HTL and absorber, respectively, are also discussed. After optimization of the device, variation of operating temperature and the effect of series and shunt resistance are also taken into consideration. The optimized results of thickness and acceptor concentration (NA) of absorber material are 1.5 µm and approx. 1.0 × 1019 cm-3, respectively. In addition, the function of HTL (with and without) in the designed SC structure is also studied. Capacitance-voltage (C-V) characteristics are also discussed to get an insight of built-in potential. We have achieved cell performances viz. efficiency = 31.86%, short circuit current density = 32.05 mA/cm2, open circuit voltage = 1.19 V, and fill factor = 83.37%.
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Affiliation(s)
- Rahutosh Ranjan
- Department of Physics, School of Physical Sciences, Mahatma Gandhi Central University, Motihari, India
| | - Nikhil Anand
- Department of Chemistry, School of Physical Sciences, Mahatma Gandhi Central University, Motihari, India
| | - Manish Nath Tripathi
- Institute of Science, Banaras Hindu University, Varanasi, 221005, Uttar Pradesh, India
| | - Neelabh Srivastava
- Department of Physics, School of Physical Sciences, Mahatma Gandhi Central University, Motihari, India
| | - Arvind Kumar Sharma
- Department of Physics, School of Physical Sciences, Mahatma Gandhi Central University, Motihari, India
| | - Masamichi Yoshimura
- Toyota Technological Institute, 2-12-1 Hisakata, Tampaku-Ku, Nagoya, 468-8511, Japan.
| | - Li Chang
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
| | - Rajanish N Tiwari
- Department of Chemistry, School of Physical Sciences, Mahatma Gandhi Central University, Motihari, India.
- Toyota Technological Institute, 2-12-1 Hisakata, Tampaku-Ku, Nagoya, 468-8511, Japan.
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan.
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Liang K, Huang L, Wang T, Wang C, Guo Y, Yue Y, Liu X, Zhang J, Hu Z, Zhu Y. Rational design of formamidine tin-based perovskite solar cell with 30% potential efficiency via 1-D device simulation. Phys Chem Chem Phys 2023; 25:9413-9427. [PMID: 36928894 DOI: 10.1039/d2cp05226a] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/06/2023]
Abstract
As a promising photovoltaic technology, halide perovskite solar cells (PSCs) have recently attracted wide attention. This work presents a systematic simulation of low bandgap formamidinium tin iodide (FASnI3)-based p-n heterojunction PSCs to investigate the effects of multiple optoelectronic variations on the photovoltaic performance. The structures of the simulated devices are n-i-p, electron transport layer-free (ETL-free), hole transport layer-free (HTL-free), and inverted HTL-free. The simulation is conducted with the Solar Cell Capacitance Simulator (SCAPS-1D). The power conversion efficiencies (PCEs) dramatically decrease when the acceptor doping density (NA) of the absorber layer exceeds 1016 cm-3. For all devices, the photovoltaic parameters dramatically decrease when the absorber defect density (Nt) is over 1015 cm-3, and the best absorber layer thickness is 1000 nm. It should be pointed out that the Nt and the interface defect layer (IDL) are the primary culprits that seriously affect the device performance. When the interfacial defect density (Nit) exceeds 1012 cm-3, PCEs begin to decline significantly. Therefore, paying attention to these defect layers is necessary to improve the PCE. Furthermore, the proper conduction band offset (CBO) between the electron transport layer (ETL) and absorber layer positively affects PSCs' performance. These simulation results help fabricate highly efficient and environment-friendly narrow bandgap PSCs.
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Affiliation(s)
- Kaiwen Liang
- Department of Microelectronic Science and Engineering School of Physical Science and Technology, Ningbo University, Fenghua Road 818, Ningbo 315211, China.
| | - Like Huang
- Department of Microelectronic Science and Engineering School of Physical Science and Technology, Ningbo University, Fenghua Road 818, Ningbo 315211, China. .,National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
| | - Tianzhou Wang
- Department of Microelectronic Science and Engineering School of Physical Science and Technology, Ningbo University, Fenghua Road 818, Ningbo 315211, China.
| | - Chaofeng Wang
- Department of Microelectronic Science and Engineering School of Physical Science and Technology, Ningbo University, Fenghua Road 818, Ningbo 315211, China.
| | - Yi Guo
- Department of Microelectronic Science and Engineering School of Physical Science and Technology, Ningbo University, Fenghua Road 818, Ningbo 315211, China.
| | - Yunliang Yue
- School of Information Engineering, Yangzhou University, Yangzhou 225127, China
| | - Xiaohui Liu
- Department of Microelectronic Science and Engineering School of Physical Science and Technology, Ningbo University, Fenghua Road 818, Ningbo 315211, China.
| | - Jing Zhang
- Department of Microelectronic Science and Engineering School of Physical Science and Technology, Ningbo University, Fenghua Road 818, Ningbo 315211, China.
| | - Ziyang Hu
- Department of Microelectronic Science and Engineering School of Physical Science and Technology, Ningbo University, Fenghua Road 818, Ningbo 315211, China.
| | - Yuejin Zhu
- Department of Microelectronic Science and Engineering School of Physical Science and Technology, Ningbo University, Fenghua Road 818, Ningbo 315211, China.
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Zepeda Medina JC, Rosendo Andrés E, Morales Ruíz C, Camacho Espinosa E, Treviño Yarce L, Galeazzi Isasmendi R, Romano Trujillo R, García Salgado G, Coyopol Solis A, Nieto Caballero FG, Carranza Sanchez AC. Performance simulation of solar cell based on AZO/CdTe heterostructure by SCAPS 1D software. Heliyon 2023; 9:e14547. [PMID: 36967952 PMCID: PMC10034444 DOI: 10.1016/j.heliyon.2023.e14547] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/02/2022] [Revised: 03/07/2023] [Accepted: 03/09/2023] [Indexed: 03/17/2023] Open
Abstract
Simulation and analysis of solar cells based on the heterojunction of zinc oxide doped with aluminum (AZO) and cadmium telluride (CdTe) with the structure (Al/AZO/CdTe/NiO/Ni) using the Simulator of the capacitance of solar cells - 1 dimension (SCAPS-1D) has been presented in this paper. AZO is used as a window layer and Nickel oxide (NiO) has been introduced as a hole transport layer (HTL). Through the software, the effect of thickness, absorber (CdTe), and window (AZO) layers carrier concentration, operating temperature, and resistances (series and shunt) have been studied. Simulation results show that the solar cell performance can be greatly improved by adjusting the layer's thickness and carrier concentration, obtaining optimal values of 10 nm and 10 18 c m - 3 for the AZO layer, while for the CdTe layer they were 2 μm and 10 15 c m - 3 . The optimum series and shunt resistances are in the range of 1-3 Ω c m 2 and 1800-2200 Ω c m 2 respectively. A maximum power conversion efficiency (PCE) of 14.2% is achieved with an open circuit voltage (Voc) of 0.74 V, short circuit current density (Jsc) of 26.15 m A / c m 2 and a fill factor (FF) of 72.83%, this shows AZO potential to be considered as an interesting material to replace CdS window layer.
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Saeed F, Haseeb Khan M, Tauqeer HA, Haroon A, Idrees A, Shehrazi SM, Prokop L, Blazek V, Misak S, Ullah N. Numerical Investigation of Photo-Generated Carrier Recombination Dynamics on the Device Characteristics for the Perovskite/Carbon Nitride Absorber-Layer Solar Cell. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:4012. [PMID: 36432297 PMCID: PMC9699136 DOI: 10.3390/nano12224012] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/07/2022] [Revised: 11/02/2022] [Accepted: 11/09/2022] [Indexed: 06/16/2023]
Abstract
The nitrogenated holey two-dimensional carbon nitride (C2N) has been efficaciously utilized in the fabrication of transistors, sensors, and batteries in recent years, but lacks application in the photovoltaic industry. The C2N possesses favorable optoelectronic properties. To investigate its potential feasibility for solar cells (as either an absorber layer/interface layer), we foremost detailed the numerical modeling of the double-absorber-layer−methyl ammonium lead iodide (CH3NH3PbI3) −carbon nitride (C2N) layer solar cell and subsequently provided in-depth insight into the active-layer-associated recombination losses limiting the efficiency (η) of the solar cell. Under the recombination kinetics phenomena, we explored the influence of radiative recombination, Auger recombination, Shockley Read Hall recombination, the energy distribution of defects, Band Tail recombination (Hoping Model), Gaussian distribution, and metastable defect states, including single-donor (0/+), single-acceptor (−/0), double-donor (0/+/2+), double-acceptor (2/−/0−), and the interface-layer defects on the output characteristics of the solar cell. Setting the defect (or trap) density to 1015cm−3 with a uniform energy distribution of defects for all layers, we achieved an η of 24.16%. A considerable enhancement in power-conversion efficiency ( η~27%) was perceived as we reduced the trap density to 1014cm−3 for the absorber layers. Furthermore, it was observed that, for the absorber layer with double-donor defect states, the active layer should be carefully synthesized to reduce crystal-order defects to keep the total defect density as low as 1017cm−3 to achieve efficient device characteristics.
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Affiliation(s)
- Faisal Saeed
- Functional Materials and Optoelectronic Devices (FMOD) Lab, Department of Physics, Lahore University of Management Sciences (LUMS), Lahore 54792, Pakistan
- Department of Electrical Engineering, Lahore University of Management Sciences (LUMS), Lahore 54792, Pakistan
| | - Muhammad Haseeb Khan
- Department of Electrical Engineering, Lahore University of Management Sciences (LUMS), Lahore 54792, Pakistan
| | - Haider Ali Tauqeer
- Department of Electrical Engineering, Lahore University of Management Sciences (LUMS), Lahore 54792, Pakistan
| | - Asfand Haroon
- Department of Electrical Engineering, University of Engineering and Technology Lahore, Lahore 39161, Pakistan
| | - Asad Idrees
- Department of Electrical Engineering, Lahore University of Management Sciences (LUMS), Lahore 54792, Pakistan
| | - Syed Mzhar Shehrazi
- Department of Electrical Engineering, University of Lahore, Lahore 54590, Pakistan
| | - Lukas Prokop
- ENET Centre, VSB—Technical University of Ostrava, 708 00 Ostrava, Czech Republic
| | - Vojtech Blazek
- ENET Centre, VSB—Technical University of Ostrava, 708 00 Ostrava, Czech Republic
| | - Stanislav Misak
- ENET Centre, VSB—Technical University of Ostrava, 708 00 Ostrava, Czech Republic
| | - Nasim Ullah
- Department of Electrical Engineering, College of Engineering, Taif University, P.O. Box 11099, Taif 21944, Saudi Arabia
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Progress in all-inorganic heterometallic halide layered double perovskites. TRENDS IN CHEMISTRY 2022. [DOI: 10.1016/j.trechm.2022.10.008] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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In Silico Investigation of the Impact of Hole-Transport Layers on the Performance of CH3NH3SnI3 Perovskite Photovoltaic Cells. CRYSTALS 2022. [DOI: 10.3390/cryst12050699] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/04/2023]
Abstract
Perovskite solar cells represent one of the recent success stories in photovoltaics. The device efficiency has been steadily increasing over the past years, but further work is needed to enhance the performance, for example, through the reduction of defects to prevent carrier recombination. SCAPS-1D simulations were performed to assess efficiency limits and identify approaches to decrease the impact of defects, through the selection of an optimal hole-transport material and a hole-collecting electrode. Particular attention was given to evaluation of the influence of bulk defects within light-absorbing CH3NH3SnI3 layers. In addition, the study demonstrates the influence of interface defects at the TiO2/CH3NH3SnI3 (IL1) and CH3NH3SnI3/HTL (IL2) interfaces across the similar range of defect densities. Finally, the optimal device architecture TiO2/CH3NH3SnI3/Cu2O is proposed for the given absorber layer using the readily available Cu2O hole-transporting material with PCE = 27.95%, FF = 84.05%, VOC = 1.02 V and JSC = 32.60 mA/cm2, providing optimal performance and enhanced resistance to defects.
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Yao H, Liu L. Design and Optimize the Performance of Self-Powered Photodetector Based on PbS/TiS 3 Heterostructure by SCAPS-1D. NANOMATERIALS 2022; 12:nano12030325. [PMID: 35159670 PMCID: PMC8838530 DOI: 10.3390/nano12030325] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/23/2021] [Revised: 01/10/2022] [Accepted: 01/17/2022] [Indexed: 11/28/2022]
Abstract
Titanium trisulphide (TiS3) has been widely used in the field of optoelectronics owing to its superb optical and electronic characteristics. In this work, a self-powered photodetector using bulk PbS/TiS3 p-n heterojunction is numerically investigated and analyzed by a Solar Cell Capacitance Simulator in one-Dimension (SCAPS-1D) software. The energy bands, electron-holes generation or recombination rate, current density-voltage (J-V), and spectral response properties have been investigated by SCAPS-1D. To improve the performance of photodetectors, the influence of thickness, shallow acceptor or donor density, and defect density are investigated. By optimization, the optimal thickness of the TiS3 layer and PbS layer are determined to be 2.5 μm and 700 nm, respectively. The density of the superior shallow acceptor (donor) is 1015 (1022) cm−3. High quality TiS3 film is required with the defect density of about 1014 cm−3. For the PbS layer, the maximum defect density is 1017 cm−3. As a result, the photodetector based on the heterojunction with optimal parameters exhibits a good photoresponse from 300 nm to 1300 nm. Under the air mass 1.5 global tilt (AM 1.5G) illuminations, the optimal short-circuit current reaches 35.57 mA/cm2 and the open circuit voltage is about 870 mV. The responsivity (R) and a detectivity (D*) of the simulated photodetector are 0.36 A W−1 and 3.9 × 1013 Jones, respectively. The simulation result provides a promising research direction to further broaden the TiS3-based optoelectronic device.
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