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Sadhukhan R, Verma SP, Mondal S, Das A, Banerjee R, Mandal A, Banerjee M, Goswami DK. Humidity-Induced Protein-Based Artificial Synaptic Devices for Neuroprosthetic Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307439. [PMID: 38213007 DOI: 10.1002/smll.202307439] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/26/2023] [Revised: 11/24/2023] [Indexed: 01/13/2024]
Abstract
Neuroprosthetics and brain-machine interfaces are immensely beneficial for people with neurological disabilities, and the future generation of neural repair systems will utilize neuromorphic devices for the advantages of energy efficiency and real-time performance abilities. Conventional synaptic devices are not compatible to work in such conditions. The cerebrospinal fluid (CSF) in the central part of the nervous system is composed of 99% water. Therefore, artificial synaptic devices, which are the fundamental component of neuromorphic devices, should resemble biological nerves while being biocompatible, and functional in high-humidity environments with higher functional stability for real-time applications in the human body. In this work, artificial synaptic devices are fabricated based on gelatin-PEDOT: PSS composite as an active material to work more effectively in a highly humid environment (≈90% relative humidity). These devices successfully mimic various synaptic properties by the continuous variation of conductance, like, excitatory/inhibitory post-synaptic current(EPSC/IPSC), paired-pulse facilitation/depression(PPF/PPD), spike-voltage dependent plasticity (SVDP), spike-duration dependent plasticity (SDDP), and spike-rate dependent plasticity (SRDP) in environments at a relative humidity levels of ≈90%.
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Affiliation(s)
- Riya Sadhukhan
- Organic Electronics Laboratory, Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur, 721302, India
| | - Shiv Prakash Verma
- School of Nano Science and Technology, Indian Institute of Technology Kharagpur, Kharagpur, 721302, India
| | - Sovanlal Mondal
- School of Nano Science and Technology, Indian Institute of Technology Kharagpur, Kharagpur, 721302, India
| | - Abhirup Das
- Organic Electronics Laboratory, Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur, 721302, India
| | - Rajdeep Banerjee
- Organic Electronics Laboratory, Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur, 721302, India
| | - Ajoy Mandal
- Organic Electronics Laboratory, Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur, 721302, India
| | | | - Dipak K Goswami
- Organic Electronics Laboratory, Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur, 721302, India
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He Y, Zhu Y, Wan Q. Oxide Ionic Neuro-Transistors for Bio-inspired Computing. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:584. [PMID: 38607119 PMCID: PMC11013937 DOI: 10.3390/nano14070584] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/20/2024] [Revised: 03/24/2024] [Accepted: 03/25/2024] [Indexed: 04/13/2024]
Abstract
Current computing systems rely on Boolean logic and von Neumann architecture, where computing cells are based on high-speed electron-conducting complementary metal-oxide-semiconductor (CMOS) transistors. In contrast, ions play an essential role in biological neural computing. Compared with CMOS units, the synapse/neuron computing speed is much lower, but the human brain performs much better in many tasks such as pattern recognition and decision-making. Recently, ionic dynamics in oxide electrolyte-gated transistors have attracted increasing attention in the field of neuromorphic computing, which is more similar to the computing modality in the biological brain. In this review article, we start with the introduction of some ionic processes in biological brain computing. Then, electrolyte-gated ionic transistors, especially oxide ionic transistors, are briefly introduced. Later, we review the state-of-the-art progress in oxide electrolyte-gated transistors for ionic neuromorphic computing including dynamic synaptic plasticity emulation, spatiotemporal information processing, and artificial sensory neuron function implementation. Finally, we will address the current challenges and offer recommendations along with potential research directions.
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Affiliation(s)
- Yongli He
- Yongjiang Laboratory (Y-LAB), Ningbo 315202, China; (Y.H.); (Y.Z.)
- National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Yixin Zhu
- Yongjiang Laboratory (Y-LAB), Ningbo 315202, China; (Y.H.); (Y.Z.)
- National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Qing Wan
- Yongjiang Laboratory (Y-LAB), Ningbo 315202, China; (Y.H.); (Y.Z.)
- National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
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Mah DG, Park H, Cho WJ. Synaptic Plasticity Modulation of Neuromorphic Transistors through Phosphorus Concentration in Phosphosilicate Glass Electrolyte Gate. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:203. [PMID: 38251166 PMCID: PMC10820041 DOI: 10.3390/nano14020203] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/29/2023] [Revised: 01/05/2024] [Accepted: 01/15/2024] [Indexed: 01/23/2024]
Abstract
This study proposes a phosphosilicate glass (PSG)-based electrolyte gate synaptic transistor with varying phosphorus (P) concentrations. A metal oxide semiconductor capacitor structure device was employed to measure the frequency-dependent (C-f) capacitance curve, demonstrating that the PSG electric double-layer capacitance increased at 103 Hz with rising P concentration. Fourier transform infrared spectroscopy spectra analysis facilitated a theoretical understanding of the C-f curve results, examining peak differences in the P-OH structure based on P concentration. Using the proposed synaptic transistors with different P concentrations, changes in the hysteresis window were investigated by measuring the double-sweep transfer curves. Subsequently, alterations in proton movement within the PSG and charge characteristics at the channel/PSG electrolyte interface were observed through excitatory post-synaptic currents, paired-pulse facilitation, signal-filtering functions, resting current levels, and potentiation and depression characteristics. Finally, we demonstrated the proposed neuromorphic system's feasibility based on P concentration using the Modified National Institute of Standards and Technology learning simulations. The study findings suggest that, by adjusting the PSG film's P concentration for the same electrical stimulus, it is possible to selectively mimic the synaptic signal strength of human synapses. Therefore, this approach can positively contribute to the implementation of various neuromorphic systems.
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Affiliation(s)
- Dong-Gyun Mah
- Department of Electronic Materials Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, Republic of Korea
| | - Hamin Park
- Department of Electronic Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, Republic of Korea
| | - Won-Ju Cho
- Department of Electronic Materials Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, Republic of Korea
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Wang X, Ran Y, Li X, Qin X, Lu W, Zhu Y, Lu G. Bio-inspired artificial synaptic transistors: evolution from innovative basic units to system integration. MATERIALS HORIZONS 2023; 10:3269-3292. [PMID: 37312536 DOI: 10.1039/d3mh00216k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The investigation of transistor-based artificial synapses in bioinspired information processing is undergoing booming exploration, and is the stable building block for brain-like computing. Given that the storage and computing separation architecture of von Neumann construction is not conducive to the current explosive information processing, it is critical to accelerate the connection between hardware systems and software simulations of intelligent synapses. So far, various works based on a transistor-based synaptic system successfully simulated functions similar to biological nerves in the human brain. However, the influence of the semiconductor and the device structural design on synaptic properties is still poorly linked. This review concretely emphasizes the recent advances in the novel structure design of semiconductor materials and devices used in synaptic transistors, not only from a single multifunction synaptic device but also to system application with various connected routes and related working mechanisms. Finally, crises and opportunities in transistor-based synaptic interconnection are discussed and predicted.
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Affiliation(s)
- Xin Wang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Yixin Ran
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Xiaoqian Li
- Shandong Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan, Shandong Province, 250100, P. R. China
| | - Xinsu Qin
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Wanlong Lu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Yuanwei Zhu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Guanghao Lu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
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Zeng J, Chen X, Liu S, Chen Q, Liu G. Organic Memristor with Synaptic Plasticity for Neuromorphic Computing Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:803. [PMID: 36903681 PMCID: PMC10005145 DOI: 10.3390/nano13050803] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/31/2022] [Revised: 02/13/2023] [Accepted: 02/20/2023] [Indexed: 06/18/2023]
Abstract
Memristors have been considered to be more efficient than traditional Complementary Metal Oxide Semiconductor (CMOS) devices in implementing artificial synapses, which are fundamental yet very critical components of neurons as well as neural networks. Compared with inorganic counterparts, organic memristors have many advantages, including low-cost, easy manufacture, high mechanical flexibility, and biocompatibility, making them applicable in more scenarios. Here, we present an organic memristor based on an ethyl viologen diperchlorate [EV(ClO4)]2/triphenylamine-containing polymer (BTPA-F) redox system. The device with bilayer structure organic materials as the resistive switching layer (RSL) exhibits memristive behaviors and excellent long-term synaptic plasticity. Additionally, the device's conductance states can be precisely modulated by consecutively applying voltage pulses between the top and bottom electrodes. A three-layer perception neural network with in situ computing enabled was then constructed utilizing the proposed memristor and trained on the basis of the device's synaptic plasticity characteristics and conductance modulation rules. Recognition accuracies of 97.3% and 90% were achieved, respectively, for the raw and 20% noisy handwritten digits images from the Modified National Institute of Standards and Technology (MNIST) dataset, demonstrating the feasibility and applicability of implementing neuromorphic computing applications utilizing the proposed organic memristor.
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Affiliation(s)
- Jianmin Zeng
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Xinhui Chen
- College of Information Engineering, Jinhua Polytechnic, Jinhua 321017, China
| | - Shuzhi Liu
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Qilai Chen
- AEROSPACE SCIENCE & INDUSTRY SHENZHEN (GROUP) CO., LTD., Shenzhen 518000, China
| | - Gang Liu
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
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Tanim MMH, Templin Z, Zhao F. Natural Organic Materials Based Memristors and Transistors for Artificial Synaptic Devices in Sustainable Neuromorphic Computing Systems. MICROMACHINES 2023; 14:235. [PMID: 36837935 PMCID: PMC9963886 DOI: 10.3390/mi14020235] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/25/2022] [Revised: 01/15/2023] [Accepted: 01/16/2023] [Indexed: 06/18/2023]
Abstract
Natural organic materials such as protein and carbohydrates are abundant in nature, renewable, and biodegradable, desirable for the construction of artificial synaptic devices for emerging neuromorphic computing systems with energy efficient operation and environmentally friendly disposal. These artificial synaptic devices are based on memristors or transistors with the memristive layer or gate dielectric formed by natural organic materials. The fundamental requirement for these synaptic devices is the ability to mimic the memory and learning behaviors of biological synapses. This paper reviews the synaptic functions emulated by a variety of artificial synaptic devices based on natural organic materials and provides a useful guidance for testing and investigating more of such devices.
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Kim HS, Park H, Cho WJ. Enhanced Synaptic Properties in Biocompatible Casein Electrolyte via Microwave-Assisted Efficient Solution Synthesis. Polymers (Basel) 2023; 15:polym15020293. [PMID: 36679174 PMCID: PMC9864603 DOI: 10.3390/polym15020293] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/05/2022] [Revised: 12/26/2022] [Accepted: 01/03/2023] [Indexed: 01/09/2023] Open
Abstract
In this study, we fabricated an electric double-layer transistor (EDLT), a synaptic device, by preparing a casein biopolymer electrolyte solution using an efficient microwave-assisted synthesis to replace the conventional heating (heat stirrer) synthesis. Microwave irradiation (MWI) is more efficient in transferring energy to materials than heat stirrer, which significantly reduces the preparation time for casein electrolytes. The capacitance-frequency characteristics of metal-insulator-metal configurations applying the casein electrolyte prepared through MWI or a heat stirrer were measured. The capacitance of the MWI synthetic casein was 3.58 μF/cm2 at 1 Hz, which was higher than that of the heat stirrer (1.78 μF/cm2), confirming a stronger EDL gating effect. Electrolyte-gated EDLTs using two different casein electrolytes as gate-insulating films were fabricated. The MWI synthetic casein exhibited superior EDLT electrical characteristics compared to the heat stirrer. Meanwhile, essential synaptic functions, including excitatory post-synaptic current, paired-pulse facilitation, signal filtering, and potentiation/depression, were successfully demonstrated in both EDLTs. However, MWI synthetic casein electrolyte-gated EDLT showed higher synaptic facilitation than the heat stirrer. Furthermore, we performed an MNIST handwritten-digit-recognition task using a multilayer artificial neural network and MWI synthetic casein EDLT achieved a higher recognition rate of 91.24%. The results suggest that microwave-assisted casein solution synthesis is an effective method for realizing biocompatible neuromorphic systems.
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Affiliation(s)
- Hwi-Su Kim
- Department of Electronic Materials Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, Republic of Korea
| | - Hamin Park
- Department of Electronic Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, Republic of Korea
| | - Won-Ju Cho
- Department of Electronic Materials Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, Republic of Korea
- Correspondence: ; Tel.: +82-2-940-5163
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