Comparison of Erosion Behavior and Particle Contamination in Mass-Production CF₄/O₂ Plasma Chambers Using Y₂O₃ and YF₃ Protective Coatings

Fabrication, Microstructure and Plasma Resistance Behavior of Y-Al-Si-O (YAS) Glass-Ceramics Coated on Alumina Ceramics

This study investigates the fabrication, microstructural characteristics and plasma resistance of Y-Al-Si-O (YAS) glass-ceramics coated on alumina ceramics. YAS frits were initially prepared using a melt-quenching method, then homogenously milled and coated onto alumina ceramics. The melt-coating process was conducted at 1650 °C for 1 h. The composition and microstructure of the glass frits and coatings were thoroughly characterized using X-ray diffraction, scanning electron microscopy, and energy-dispersive X-ray spectroscopy. These analyses revealed a dense microstructure with a polycrystalline structure predominantly composed of Y3Al5O12 (YAG) phase and a minor phase of Y2Si2O7. The YAS coatings on alumina revealed a dense layer with strong adhesion to the substrate. Subsequently, the coatings underwent C4F6/Ar/O2 plasma treatment for 1 h. Plasma exposure tests demonstrated that the YAS-coated alumina exhibited significantly better etching resistance compared to uncoated alumina, with minimal surface damage observed on the YAS coating, confirming its protective properties against plasma. The superior plasma resistance of YAS coatings is attributed to the predominance of its YAG phase. This research offers a more stable and cost-efficient solution for protecting ceramics in demanding plasma environments.

Enhancing the Plasma-Resistance Properties of Li2O-Al2O3-SiO2 Glasses for the Semiconductor Etch Process via Alkaline Earth Oxide Incorporation

To develop plasma-resistant glass materials suitable for semiconductor etching processes, we introduced alkaline earth oxides (ROs) into a Li₂O-Al₂O₃-SiO₂ (LAS) glass. Analysis of glass properties with respect to the additives revealed that among the analyzed materials, the LAS material in which Li₂O was partially replaced by MgO (MLAS) exhibited the most favorable characteristics, including a low dielectric constant (6.3) and thermal expansion coefficient (2.302 × 10^-6/°C). The high performance of MLAS is attributed to the high ionic field strength of Mg²⁺ ions, which restricts the movement of Li⁺ ions under the influence of electric fields and thermal vibrations at elevated temperatures. When exposed to CF₄/O₂/Ar plasma, the etching speed of RO-doped glasses decreased compared with that of quartz and LAS glass, primarily owing to the generation of a high-sublimation-point fluoride layer on the surface. Herein, MLAS demonstrated the slowest etching speed, indicating exceptional plasma resistance. X-ray photoelectron spectroscopy analysis conducted immediately after plasma etching revealed that the oxidation-to-fluorination ratio of Li was the lowest for MLAS. This observation suggests that the presence of Mg²⁺ ions in the plasma discharge inhibits the migration of Li⁺ ions toward the surface, thereby contributing to the excellent plasma resistance of MLAS.

Correlation with the Microstructure and Synergistic Physiochemical Etching Resistance of Nanocomposites under Fluorine-Containing Plasma Conditions

In the semiconductor fabrication industry, high-power plasma is indispensable to obtain a high aspect ratio of chips. For applications to ceramic components including the dielectric window and ring in the semiconductor etching chamber, the Y₂O₃ ceramics have attracted interest recently based on excellent erosion resistance. When a high bias voltage is applied in a plasma environment containing fluorine gas, both chemical etching and ion bombardment act simultaneously on the ceramic components. During this etching process, severe erosion and particles generated on the ceramic surface can have effects on overall equipment effectiveness. Herein, we report the outstanding plasma etching resistance of Y₂O₃-MgO nanocomposite ceramics under a CF₄/Ar/O₂ gas atmosphere; the erosion depth of this material is 40-79% of that of the reference materials, Y₂O₃ ceramics. In a robust approach involving effective control of the microstructure with different initial particles and sintering conditions, it is possible to understand the relationship between etching behavior and microstructure evolution of the nanocomposite ceramic. The results indicate that the nanocomposite with fine and homogeneous domain distribution can decrease particle generation and ameliorate its life cycle; accordingly, this is a promising alternative candidate material for ceramic components in plasma chambers.

Improvement of Yttrium Oxyfluoride Coating with Modified Precursor Solution for Laser-Induced Hydrothermal Synthesis

In the semiconductor manufacturing process, the inner walls of the equipment are coated with yttrium-based oxides for etch resistance against plasma exposure. Yttrium oxyfluoride (YOF) particle synthesis and coating methods have been actively studied owing to their high erosion resistance compared to Y2O3 and Al2O3. Owing to the formation of a rough and porous coating layer by thermal spray-coating, the coating layer disintegrates, as the etching process has been conducted for a long time. Laser-induced synthesis and coating technology offer several advantages, including simplified process steps, ease of handling, and formation of a dense coating layer on the target material. In this study, YOF was coated on an aluminum substrate using a modified precursor solution. The NaF and HMTA were added to the precursor solution, resulting in enhanced synthetic reactivity and stabilizing the oxides. The material coated on the surface was analyzed based on the characteristics of composition, chemical bonding, and phase identification. We found that the coating properties can be improved by using an appropriate combination of modified precursor solutions and laser parameters. Therefore, the findings in this study are expected to be utilized in the field of coating technology.

Thermal Atomic Layer Deposition of Yttrium Oxide Films and Their Properties in Anticorrosion and Water Repellent Coating Applications

The thermal atomic layer deposition (ThALD) of yttrium oxide (Y2O3) was developed using the newly designed, liquid precursor, Y(EtCp)2(iPr2-amd), as the yttrium source in combination with different oxygen sources, such as ozone, water and even molecular oxygen. Saturation was observed for the growth of the Y2O3 films within an ALD window of 300 to 450 °C and a growth per cycle (GPC) up to 1.1 Å. The resulting Y2O3 films possess a smooth and crystalline structure, while avoiding any carbon and nitrogen contamination, as observed by X-ray photoelectron spectroscopy (XPS). The films showed strong resistance to fluorine-containing plasma, outperforming other resistant materials, such as silicon oxide, silicon nitride and alumina. Interestingly, the hydrophilic character exhibited by the film could be switched to hydrophobic after exposure to air, with water contact angles exceeding 90°. After annealing under N2 flow at 600 °C for 4 min, the hydrophobicity was lost, but proved recoverable after prolonged air exposure or intentional hydrocarbon exposure. The origin of these changes in hydrophobicity was examined.

Surface Analysis of Chamber Coating Materials Exposed to CF4/O2 Plasma

Coating the inner surfaces of high-powered plasma processing equipment has become crucial for reducing maintenance costs, process drift, and contaminants. The conventionally preferred alumina (Al2O3) coating has been replaced with yttria (Y2O3) due to the long-standing endurance achieved by fluorine-based etching; however, the continuous increase in radio frequency (RF) power necessitates the use of alternative coating materials to reduce process shift in a series of high-powered semiconductor manufacturing environments. In this study, we investigated the fluorine-based etching resistance of atmospheric pressure-sprayed alumina, yttria, yttrium aluminum garnet (YAG), and yttrium oxyfluoride (YOF). The prepared ceramic-coated samples were directly exposed to silicon oxide etching, and the surfaces of the plasma-exposed samples were characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy. We found that an ideal coating material must demonstrate high plasma-induced structure distortion by the fluorine atom from the radical. For endurance to fluorine-based plasma exposure, the bonding structure with fluoride was shown to be more effective than oxide-based ceramics. Thus, fluoride-based ceramic materials can be promising candidates for chamber coating materials.

Plasma Etching Behavior of YOF Coating Deposited by Suspension Plasma Spraying in Inductively Coupled CHF3/Ar Plasma

Dense yttrium oxyfluoride (YOF) coating was successfully deposited by suspension plasma spraying (SPS) with coaxial feeding. After deposition for 6 min at a plasma power of 105 kW, the thickness of the YOF coating was 55 ± 3.2 µm with a porosity of 0.15% ± 0.01% and the coating rate was ~9.2 µm/min. The crystalline structure of trigonal YOF was confirmed by X-ray diffractometry (XRD). The etching behavior of the YOF coating was studied using inductively coupled CHF3/Ar plasma in comparison with those of the Al2O3 bulk and Y2O3 coating. Crater-like erosion sites and cavities were formed on the whole surface of the Al2O3 bulk and Y2O3 coating. In contrast, the surface of the YOF coating showed no noticeable difference before and after exposure to the CHF3/Ar plasma. Such high resistance of the YOF coating to fluorocarbon plasma comes from the strongly fluorinated layer on the surface. The fluorination on the surface of materials was confirmed by X-ray photoelectron spectrum analysis (XPS). Depth profiles of the compositions of Al2O3, Y2O3, and YOF samples by XPS revealed that the fluorination layer of the YOF coating was much thicker than those of Al2O3 and Y2O3. These results indicate that if the inner wall of the semiconductor process chamber is coated by YOF using SPS, the generation of contamination particles would be minimized during the fluorocarbon plasma etching process.

Plasma Etching Behavior of SF6 Plasma Pre-Treatment Sputter-Deposited Yttrium Oxide Films

Yttrium oxyfluoride (YOF) protective materials were fabricated on sputter-deposited yttrium oxide (Y2O3) by high-density (sulfur fluoride) SF6 plasma irradiation. The structures, compositions, and fluorocarbon-plasma etching behaviors of these films were systematically characterized by various techniques. After exposure to SF6 plasma, the Y2O3 film surface was fluorinated significantly to form a YOF film with an approximate average thickness of 30 nm. X-ray photoelectron spectroscopy revealed few changes in the elemental and chemical compositions of the surface layer after fluorination, confirming the chemical stability of the YOF/Y2O3 sample. Transmission electron microscopy confirmed a complete lattice pattern on the YOF/Y2O3 structure after fluorocarbon plasma exposure. These results indicate that the SF6 plasma-treated Y2O3 film is more erosion resistant than the commercial Y2O3 coating, and thus accumulates fewer contamination particles.

Contamination Particles and Plasma Etching Behavior of Atmospheric Plasma Sprayed Y2O3 and YF3 Coatings under NF3 Plasma

Yttrium oxide (Y2O3) and yttrium oxyfluoride (YO0.6F2.1) protective coatings were prepared by an atmospheric plasma spraying technique. The coatings were exposed to a NF3 plasma. After the NF3 plasma treatment, the mass loss of the coatings showed that the etching rate of YO0.6F2.1 was larger than that of the Y2O3. X-ray photoelectron spectroscopy revealed that YO0.5F1.9 was present in the Y2O3 coating, whereas YO0.4F2.2 was present in the YO0.6F2.1 coating. Transmission electron microscope analysis conducted on contamination particles generated during the plasma etching showed that both coatings were mainly composed of YFx. The contamination particles estimated by in-situ particle monitoring sensor revealed that the YO0.6F2.1 compared with the Y2O3 coatings produced 65% fewer contamination particles.

Structural and Fluorine Plasma Etching Behavior of Sputter-Deposition Yttrium Fluoride Film

Yttrium fluoride (YF₃) films were grown on sapphire substrate by a radio frequency magnetron using a commercial ceramic target in a vacuum chamber. The structure, composition, and plasma etching behavior of the films were systematically investigated. The YF₃ film was deposited at a working pressure of 5 mTorr and an RF power of 150 W. The substrate-heating temperature was increased from 400 to 700 °C in increments of 100 °C. High-resolution transmission electron microscopy (HRTEM) and X-ray diffraction results confirmed an orthorhombic YF₃ structure was obtained at a substrate temperature of 700 °C for 2 h. X-ray photoelectron spectroscopy revealed a strongly fluorinated bond (Y–F bond) on the etched surface of the YF₃ films. HRTEM analysis also revealed that the YF₃ films became yttrium-oxyfluorinated after exposure to fluorocarbon plasma. The etching depth was three times lower on YF₃ film than on Al₂O₃ plate. These results showed that the YF₃ films have excellent erosion resistance properties compared to Al₂O₃ plates.

Preparation and Characterization of Sprayed-Yttrium Oxyfluoride Corrosion Protective Coating for Plasma Process Chambers

This study investigates the microstructure, mechanical and electrical properties of dense yttrium oxyfluoride (YOF) coatings fabricated by the atmospheric plasma spraying technique. Transmission electron microscopy and X-ray diffraction analysis revealed a well crystallized YOF coating with preferred orientations. The YOF coatings were more porous (approximate porosity 0.5%), with higher hardness (290 ± 30 HV), lower electrical resistivity (1016 Ω⋅cm), and breakdown voltage (5.57 kV), than conventional yttrium-fluoride plasma-protective coating. These results indicate the potential of the YOF coating as a novel antiplasma and corrosion-resistant ceramic.