Efficient CdTe Nanocrystal/TiO₂ Hetero-Junction Solar Cells with Open Circuit Voltage Breaking 0.8 V by Incorporating A Thin Layer of CdS Nanocrystal

Efficient PbS Quantum Dot Solar Cells with Both Mg-Doped ZnO Window Layer and ZnO Nanocrystal Interface Passivation Layer

In this paper, a Mg-doped ZnO (MZO) thin film is prepared by a simple solution process under ambient conditions and is used as the window layer for PbS solar cells due to a wide n-type bandgap. Moreover, a thin layer of ZnO nanocrystals (NCs) was deposited on the MZO to reduce carrier recombination at the interface for inverted PbS quantum dot solar cells with the configuration Indium Tin Oxides (ITO)/MZO/ZnO NC (w/o)/PbS/Au. The effect of film thickness and annealing temperature of MZO and ZnO NC on the performance of PbS quantum dot solar cells was investigated in detail. It was found that without the ZnO NC thin layer, the highest power conversion efficiency(PCE) of 5.52% was obtained in the case of a device with an MZO thickness of 50 nm. When a thin layer of ZnO NC was introduced between MZO and PbS quantum dot film, the PCE of the champion device was greatly improved to 7.06% due to the decreased interface recombination. The usage of the MZO buffer layer along with the ZnO NC interface passivation technique is expected to further improve the performance of quantum dot solar cells.

Building Solar Cells from Nanocrystal Inks

The use of solution-processed photovoltaics is a low cost, low material-consuming way to harvest abundant solar energy. Organic semiconductors based on perovskite or colloidal quantum dot photovoltaics have been well developed in recent years; however, stability is still an important issue for these photovoltaic devices. By combining solution processing, chemical treatment, and sintering technology, compact and efficient CdTe nanocrystal (NC) solar cells can be fabricated with high stability by optimizing the architecture of devices. Here, we review the progress on solution-processed CdTe NC-based photovoltaics. We focus particularly on NC materials and the design of devices that provide a good p–n junction quality, a graded bandgap for extending the spectrum response, and interface engineering to decrease carrier recombination. We summarize the progress in this field and give some insight into device processing, including element doping, new hole transport material application, and the design of new devices.

Facile Synthesis of Ternary Alloy of CdSe1-xSx Quantum Dots with Tunable Absorption and Emission of Visible Light

The synthesis of alloyed semiconductor quantum dots has produced structures that have distinct properties in comparison with both their bulk counterparts and their parent binary semiconductor quantum dots. In this work, the quantum confined structures of a ternary alloy of CdSe_1−xS_x were synthesized by one-pot synthesis method in an aqueous medium at a low temperature and capped with 3-mercaptopropoionic acid. Structures of the synthesized quantum dots were investigated by energy dispersive X-ray, X-ray diffraction, X-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy. The obtained quantum dots had modified cubic structures as proven by X-ray diffraction and selected area electron diffraction. The optical properties of the synthesized quantum dots were characterized by optical absorption, photoluminescence, and color analysis. Optical absorption investigation revealed a widening of the band gap of CdSe_1−xS_x with increasing S content. This widening increased for the samples suspended in water relative to the samples measured in powder form due to the difference in the environment of the two cases. The size determined from the optical absorption measurements was found to be compatible with the sizes obtained from the X-ray diffraction with the value of bowing parameter around 1, which indicated a graded diffusion of sulfur. It was also ascertained that the emission of different compositions covered the most visible range with a small full width at half maximum. The x and y values of the chromaticity coordinates decreased with increasing sulfur content of up to 15%, while the z value increased.