High-Performance Flexible Ultraviolet Photodetectors with Ni/Cu-Codoped ZnO Nanorods Grown on PET Substrates

Amorphous Silicon Thin-Film Solar Cells on Fabrics as Large-Scale Detectors for Textile Personal Protective Equipment in Active Laser Safety

Laser safety is starting to play an increasingly important role, especially when the laser is used as a tool. Passive laser safety systems quickly reach their limits and, in some cases, provide inadequate protection. To counteract this, various active systems have been developed. Flexible and especially textile-protective materials pose a special challenge. The market still lacks personal protective equipment (PPE) for active laser safety. Covering these materials with solar cells as large-area optical detectors offers a promising possibility. In this work, an active laser protection fabric with amorphous silicon solar cells is presented as a large-scale sensor for continuous wave and pulsed lasers (down to ns). First, the fabric and the solar cells were examined separately for irradiation behavior and damage. Laser irradiation was performed at wavelengths of 245, 355, 532, and 808 nm. The solar cell sensors were then applied directly to the laser protection fabric. The damage and destruction behavior of the active laser protection system was investigated. The results show that the basic safety function of the solar cell is still preserved when the locally damaged or destroyed area is irradiated again. A simple automatic shutdown system was used to demonstrate active laser protection within 50 ms.

Charge transfer and X-ray absorption investigations in aluminium and copper co-doped zinc oxide nanostructure for perovskite solar cell electrodes

This study explores influence of charge transfer and X-ray absorption characteristics in aluminum (Al) and copper (Cu) co-doped zinc oxide (ZnO) nanostructures for perovskite solar cell electrodes. Sol-gel technique was employed to synthesize the nanostructures, and their optical and morphological properties were investigated. X-ray diffraction (XRD) analysis confirmed high crystallinity and also single-phase composition of all the samples, particularly up to 5% Al co-doping. Field emission scanning electron microscopy (FESEM) exhibited the formation of pseudo-hexagonal wurtzite nanostructure and the transition to nanorods at 5% Al co-doping. Diffuse reflectance spectroscopy indicated a reduction in the optical band gap of co-doped zinc oxide from 3.11 to 2.9 eV with increasing Al doping. Photoluminescence spectra (PL) exhibited a decrease in peak intensity, suggesting enhanced conductivity in ZnO, also confirmed from I-V measurements. Near-edge X-ray absorption fine structure (NEXAFS) analysis depicts that charge transfer from Al to oxygen (O) species enhanced the photosensing properties of the nanostructure, which was supported by FESEM micrographs and PL spectra. Furthermore, the study discovered that 5% Al co-doping significantly reduced the density of emission defects (deep-level) in Cu-ZnO nanostructure. These findings highlight the potential of Cu and Al co-doped ZnO materials for perovskite solar cell electrodes, as their improved optical and morphological properties resulting from charge transfer could enhance device performance. The investigation of charge transfer and X-ray absorption characteristics provides valuable insights into the underlying mechanisms and behaviors of the co-doped ZnO nanostructures. However, further research is required to delve into the intricate hybridization resulting from charge transfer and explore the broader impact of co-doping on other properties of the nanostructures, enabling a comprehensive understanding of their potential applications in perovskite solar cells.

Inversion of the Complex Refractive Index of Au-Ag Alloy Nanospheres Based on the Contour Intersection Method

The contour intersection method is a new method used to invert the complex refractive index of small particles. Research has yet to be reported on using this method to invert the complex refractive index of nanoparticles. This paper reports the feasibility and reliability of the contour intersection method in the inversion of the complex refractive index of nanoparticles using Au-Ag alloy nanospheres. The Mie theory and the size-dependent dielectric function are used to calculate the light scattering and absorption efficiency of Au-Ag alloy nanospheres corresponding to the complex refractive index. The complex refractive index of the particles is obtained by inversion with the contour intersection method. The backscattering efficiency constraint method is used to determine the unique solution when multiple valid solutions from the contour intersection method appear. The effects of the Au component percentage, particle size, and measurement errors on the inversion results are quantitatively analyzed. Finally, the inversion accuracy is compared and analyzed with the traditional iterative method. The results show that as long as the light scattering efficiency, light absorption efficiency, and backscattering efficiency of Au nanospheres can be measured, the accurate complex refractive index can also be calculated by inversion using the contour intersection method. The accuracy of the inversion results can be ensured when the measurement error is less than 5%. The results of inversion using the contour intersection method are better than those of the iterative methods under the same conditions. This study provides a simple and reliable inversion method for measuring the complex refractive index of Au-Ag alloy nanospheres.

Crystalline-Amorphous Nanostructures: Microstructure, Property and Modelling

Crystalline metals generally exhibit good deformability but low strength and poor irradiation tolerance. Amorphous materials in general display poor deformability but high strength and good irradiation tolerance. Interestingly, refining characteristic size can enhance the flow strength of crystalline metals and the deformability of amorphous materials. Thus, crystalline-amorphous nanostructures can exhibit an enhanced strength and an improved plastic flow stability. In addition, high-density interfaces can trap radiation-induced defects and accommodate free volume fluctuation. In this article, we review crystalline-amorphous nanocomposites with characteristic microstructures including nanolaminates, core-shell microstructures, and crystalline/amorphous-based dual-phase nanocomposites. The focus is put on synthesis of characteristic microstructures, deformation behaviors, and multiscale materials modelling.

Innovative Investigation of Zinc Oxide Nanoparticles Used in Dentistry

Dental caries is a major lifestyle concern as dental components affect the face of an individual. The issue of tooth decay occurs in every age group throughout the globe. Researchers are probing incipient implements and techniques to develop filling agents for decayed teeth. Zinc oxide (ZnO) powder is utilized mostly as a filling agent. Nanotechnology enhanced the efficiency of compounds of metal oxides utilized for dental caries. The present study aims to investigate the properties of ZnO nanoparticles (NPs) synthesized chemically (using ZnCl2 and NaOH) as well as biologically (using aqueous leaf extract of Murraya paniculata). The XRD patterns confirm that ZnO NPs have a hexagonal crystalline structure with particle sizes of 47 nm and 55 nm for chemically and biologically synthesized NPs, respectively. The FE-SEM data confirm the nanorod and spherical/cubical shape morphologies for the chemically and biologically synthesized ZnO NPs, respectively. FTIR data show the peaks between 4000 and 450 cm−1 of the functional groups of –OH, C-O, –C-H-, and Zn-O bonds. The UV–Vis absorption study indicates a peak around 370 nm and a hump around 360 nm corresponding to the chemically and biologically synthesized ZnO NPs, respectively. An antibacterial bioassay was performed and compared with commercially available ZnO bulk powder against tooth decaying pathogens, viz., Streptococcus mutans, Staphylococcus aureus, E. coli, and Lactobacillus fermentum, and found that both ZnO NPs had results closer to those of the standard drug (rifampicin). Thus, the synthesized ZnO NPs may be utilized as nano-drugs for the application of tooth decaying filling agents. Even biologically synthesized ZnO NPs may be considered more environmentally friendly and less toxic to human health concerns.

Memristive Characteristics of the Single-Layer P-Type CuAlO2 and N-Type ZnO Memristors

Memristive behaviors are demonstrated in the single-layer oxide-based devices. The conduction states can be continually modulated with different pulses or voltage sweeps. Here, the p-CuAlO₂- and n-ZnO-based memristors show the opposite bias polarity dependence with the help of tip electrode. It is well known that the conductivity of p-type and n-type semiconductor materials has the opposite oxygen concentration dependence. Thus, the memristive behaviors may attribute to the oxygen ion migration in the dielectric layers for the single-layer oxide based memristors. Further, based on the redox, the model of compressing dielectric layer thickness has been proposed to explain the memristive behavior.

Study on the Synthesis of ZnO Nanoparticles Using Azadirachta indica Extracts for the Fabrication of a Gas Sensor

This paper compared the effects of A. indica plant proteins over chemical methods in the morphology of zinc oxide nanoparticles (ZnO NPs) prepared by a co-precipitation method, and ethanol sensing performance of prepared thin films deposited over a fluorene-doped tin oxide (FTO) bind glass substrate using spray pyrolysis technique. The average crystallite sizes and diameters of the grain-sized cluster ZnO NPs were 25 and (701.79 ± 176.21) nm for an undoped sample and 20 and (489.99 ± 112.96) nm for A. india dye-doped sample. The fourier transform infrared spectroscopy (FTIR) analysis confirmed the formation of the Zn-O bond at 450 cm^-1, and also showed the presence of plant proteins due to A. indica dye extracts. ZnO NPs films exhibited good response (up to 51 and 72% for without and with A. indica dye-doped extracts, respectively) toward ethanol vapors with quick response-recovery characteristics at a temperature of 250 °C for undoped and 225 °C for A. indica dye-doped ZnO thin films. The interaction of A. indica dye extracts helps to decrease the operating temperature and increased the response and recovery rates of the sensor, which may be due to an increase in the specific surface area, resulting in adsorption of more oxygen and hence high response results.

Maximum Achievable N Content in Atom-by-Atom Growth of Amorphous Si-B-C-N Materials

Amorphous Si-B-C-N alloys can combine exceptional oxidation resistance up to 1500 °C with high-temperature stability of superior functional properties. Because some of these characteristics require as high N content as possible, the maximum achievable N content in amorphous Si-B-C-N is examined by combining extensive ab initio molecular dynamics simulations with experimental data. The N content is limited by the formation of unbonded N2 molecules, which depends on the composition (most intensive in C rich materials, medium in B rich materials, least intensive in Si-rich materials) and on the density (increasing N2 formation with decreasing packing factor when the latter is below 0.28, at a higher slope of this increase at lower B content). The maximum content of N bonded in amorphous Si-B-C-N networks of lowest-energy densities is in the range from 34% to 57% (materials which can be grown without unbonded N2) or at most from 42% to 57% (at a cost of affecting materials characteristics by unbonded N2). The results are important for understanding the experimentally reported nitrogen contents, design of stable amorphous nitrides with optimized properties and pathways for their preparation, and identification of what is or is not possible to achieve in this field.

Effects of Seed-Layer N2O Plasma Treatment on ZnO Nanorod Based Ultraviolet Photodetectors: Experimental Investigation with Two Different Device Structures

The crystalline quality of ZnO NR (nanorod) as a sensing material for visible blind ultraviolet PDs (photodetectors) critically depends on the SL (seed layer) material of properties, which is a key to high-quality nanocrystallite growth, more so than the synthesis method. In this study, we fabricated two different device structures of a gateless AlGaN/GaN HEMT (high electron mobility transistor) and a photoconductive PD structure with an IDE (interdigitated electrode) pattern implemented on a PET (polyethylene terephthalate) flexible substrate, and investigated the impact on device performance through the SL N₂O plasma treatment. In case of HEMT-based PD, the highest current on-off ratio (~7) and spectral responsivity R (~1.5 × 10⁵ A/W) were obtained from the treatment for 6 min, whereas the IDE pattern-based PD showed the best performance (on-off ratio = ~44, R = ~69 A/W) from the treatment for 3 min and above, during which a significant etch damage on PET substrates was produced. This improvement in device performance was due to the enhancement in NR crystalline quality as revealed by our X-ray diffraction, photoluminescence, and microanalysis.

Fabrication and Potential Applications of Highly Durable Superhydrophobic Polyethylene Terephthalate Fabrics Produced by In-Situ Zinc Oxide (ZnO) Nanowires Deposition and Polydimethylsiloxane (PDMS) Packaging

Considerable attention has been devoted to the in-situ deposition of zinc oxide (ZnO) nanowires (ZnO-NWs) on the surface of organic supports, due to their very wide applications in superhydrophobicity, UV shielding, and nanogenerators. However, the poor interfacial bond strength between ZnO-NWs and its support limits their applications. Herein, we developed a facile process to grow robust ZnO-NWs on a polyethylene terephthalate (PET) fabric surface through simultaneous radiation-induced graft polymerization, hydrothermal processing, and in-situ nano-packaging; the obtained materials were denoted as PDMS@ZnO-NWs@PET. The introduction of an adhesion and stress relief layer greatly improved the attachment of the ZnO-NWs to the support, especially when the material was subjected to extreme environment conditions of external friction forces, strong acidic or alkaline solutions, UV-irradiation and even washing with detergent for a long time. The PDMS@ZnO-NWs@PET material exhibited excellent UV resistance, superhydrophobicity, and durability. The ZnO-NWs retained on the fabric surface even after 30 cycles of accelerated washing. Therefore, this process can be widely applied as a universal approach to overcome the challenges associated with growing inorganic nanowires on polymeric support surfaces.

Ultraviolet Photodetection Based on High-Performance Co-Plus-Ni Doped ZnO Nanorods Grown by Hydrothermal Method on Transparent Plastic Substrate

A growth scheme at a low processing temperature for high crystalline-quality of ZnO nanostructures can be a prime stepping stone for the future of various optoelectronic devices manufactured on transparent plastic substrates. In this study, ZnO nanorods (NRs) grown by the hydrothermal method at 150 °C through doping of transition metals (TMs), such as Co, Ni, or Co-plus-Ni, on polyethylene terephthalate substrates were investigated by various surface analysis methods. The TM dopants in ZnO NRs suppressed the density of various native defect-states as revealed by our photoluminescence and X-ray photoelectron spectroscopy analysis. Further investigation also showed the doping into ZnO NRs brought about a clear improvement in carrier mobility from 0.81 to 3.95 cm2/V-s as well as significant recovery in stoichiometric contents of oxygen. Ultra-violet photodetectors fabricated with Co-plus-Ni codoped NRs grown on an interdigitated electrode structure exhibited a high spectral response of ~137 A/W, on/off current ratio of ~135, and an improvement in transient response speed with rise-up and fall-down times of ~2.2 and ~3.1 s, respectively.

Ultraviolet Photodetecting and Plasmon-to-Electric Conversion of Controlled Inkjet-Printing Thin-Film Transistors

Direct ink-jet printing of a zinc-oxide-based thin-film transistor (ZnO-based TFT) with a three-dimensional (3-D) channel structure was demonstrated for ultraviolet light (UV) and visible light photodetection. Here, we demonstrated the channel structures by which temperature-induced Marangoni flow can be used to narrow the channel width from 318.9 ± 44.1 μm to 180.1 ± 13.9 μm via a temperature gradient. Furthermore, a simple and efficient oxygen plasma treatment was used to enhance the electrical characteristics of switching I_ON/I_OFF ratio of approximately 10⁵. Therefore, the stable and excellent gate bias-controlled photo-transistors were fabricated and characterized in detail for ultraviolet (UV) and visible light sensing. The photodetector exhibited a superior photoresponse with a significant increase of more than 2 orders of magnitude larger drain current generated upon UV illumination. The results could be useful for the development of UV photodetectors by the direct-patterning ink-jet printing technique. Additionally, we also have successfully demonstrated that a metal-semiconductor junction structure that enables plasmon energy detection by using the plasmonic effects is an efficient conversion of plasmon energy to an electrical signal. The device showed a significant variations negative shift of threshold voltage under different light power density with exposure of visible light. With the ZnO-based TFTs, only ultraviolet light detection extends to the visible light wavelength.