SnSe2 Quantum Dots: Facile Fabrication and Application in Highly Responsive UV-Detectors

Highly-Responsive Broadband Photodetector Based on Graphene-PTAA-SnS2 Hybrid

The development of wearable systems stimulate the exploration of flexible broadband photodetectors with high responsivity and stability. In this paper, we propose a facile liquid-exfoliating method to prepare SnS₂ nanosheets with high-quality crystalline structure and optoelectronic properties. A flexible photodetector is fabricated using the SnS₂ nanosheets with graphene-poly[bis(4-phenyl) (2,4,6-trimethylphenyl) amine (PTAA) hybrid structure. The liquid-exfoliated SnS₂ nanosheets enable the photodetection from ultraviolet to near infrared with high responsivity and detectivity. The flexible broadband photodetector demonstrates a maximum responsivity of 1 × 10⁵ A/W, 3.9 × 10⁴ A/W, 8.6 × 10² A/W and 18.4 A/W under 360 nm, 405 nm, 532 nm, and 785 nm illuminations, with specific detectivity up to ~10¹² Jones, ~10¹¹ Jones, ~10⁹ Jones, and ~10⁸ Jones, respectively. Furthermore, the flexible photodetector exhibits nearly invariable performance over 3000 bending cycles, rendering great potentials for wearable applications.

Arsenic-Doped SnSe Thin Films Prepared by Pulsed Laser Deposition

Pulsed UV laser deposition was exploited for the preparation of thin Sn50-x As x Se50 (x = 0, 0.05, 0.5, and 2.5) films with the aim of investigating the influence of low arsenic concentration on the properties of the deposited layers. It was found that the selected deposition method results in growth of a highly (h00) oriented orthorhombic SnSe phase. The thin films were characterized by different techniques such as X-ray diffraction, scanning electron microscopy with energy-dispersive X-ray spectroscopy, atomic force microscopy, Raman scattering spectroscopy, and spectroscopic ellipsometry. From the results, it can be concluded that thin films containing 0.5 atom % of As exhibited extreme values regarding crystallite size, unit cell volume, or refractive index that significantly differ from those of other samples. Laser ablation with quadrupole ion trap time-of-flight mass spectrometry was used to identify and compare species present in the plasma originating from the interaction of a laser pulse with solid-state Sn50-x As x Se50 materials in both forms, i.e. parent powders as well as deposited thin films. The mass spectra of both materials were similar; particularly, signals of Sn m Se n + clusters with low m and n values were observed.

Tin-selenide as a futuristic material: properties and applications

SnSe/SnSe2 is a promising versatile material with applications in various fields like solar cells, photodetectors, memory devices, lithium and sodium-ion batteries, gas sensing, photocatalysis, supercapacitors, topological insulators, resistive switching devices due to its optimal band gap. In this review, all possible applications of SnSe/SnSe2 have been summarized. Some of the basic properties, as well as synthesis techniques have also been outlined. This review will help the researcher to understand the properties and possible applications of tin selenide-based materials. Thus, this will help in advancing the field of tin selenide-based materials for next generation technology.

SnSe Nanosheets: From Facile Synthesis to Applications in Broadband Photodetections

In recent years, using two-dimensional (2D) materials to realize broadband photodetection has become a promising area in optoelectronic devices. Here, we successfully synthesized SnSe nanosheets (NSs) by a facile tip ultra-sonication method in water-ethanol solvent which was eco-friendly. The carrier dynamics of SnSe NSs was systematically investigated via a femtosecond transient absorption spectroscopy in the visible wavelength regime and three decay components were clarified with delay time of τ₁ = 0.77 ps, τ₂ = 8.3 ps, and τ₃ = 316.5 ps, respectively, indicating their potential applications in ultrafast optics and optoelectronics. As a proof-of-concept, the photodetectors, which integrated SnSe NSs with monolayer graphene, show high photoresponsivities and excellent response speeds for different incident lasers. The maximum photo-responsivities for 405, 532, and 785 nm were 1.75 × 10⁴ A/W, 4.63 × 10³ A/W, and 1.52 × 10³ A/W, respectively. The photoresponse times were ~22.6 ms, 11.6 ms, and 9.7 ms. This behavior was due to the broadband light response of SnSe NSs and fast transportation of photocarriers between the monolayer graphene and SnSe NSs.