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Raman S, A RS, M S. Advances in silicon nanowire applications in energy generation, storage, sensing, and electronics: a review. NANOTECHNOLOGY 2023; 34:182001. [PMID: 36640446 DOI: 10.1088/1361-6528/acb320] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/12/2022] [Accepted: 01/14/2023] [Indexed: 06/17/2023]
Abstract
Nanowire-based technological advancements thrive in various fields, including energy generation and storage, sensors, and electronics. Among the identified nanowires, silicon nanowires (SiNWs) attract much attention as they possess unique features, including high surface-to-volume ratio, high electron mobility, bio-compatibility, anti-reflection, and elasticity. They were tested in domains of energy generation (thermoelectric, photo-voltaic, photoelectrochemical), storage (lithium-ion battery (LIB) anodes, super capacitors), and sensing (bio-molecules, gas, light, etc). These nano-structures were found to improve the performance of the system in terms of efficiency, stability, sensitivity, selectivity, cost, rapidity, and reliability. This review article scans and summarizes the significant developments that occurred in the last decade concerning the application of SiNWs in the fields of thermoelectric, photovoltaic, and photoelectrochemical power generation, storage of energy using LIB anodes, biosensing, and disease diagnostics, gas and pH sensing, photodetection, physical sensing, and electronics. The functionalization of SiNWs with various nanomaterials and the formation of heterostructures for achieving improved characteristics are discussed. This article will be helpful to researchers in the field of nanotechnology about various possible applications and improvements that can be realized using SiNW.
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Affiliation(s)
- Srinivasan Raman
- Centre for Innovation and Product Development (CIPD), Vellore Institute of Technology (VIT), Chennai Campus, Chennai, Tamil Nadu 600127, India
- School of Electronics Engineering (SENSE), Vellore Institute of Technology (VIT), Chennai Campus, Chennai, Tamil Nadu 600127, India
| | - Ravi Sankar A
- Centre for Innovation and Product Development (CIPD), Vellore Institute of Technology (VIT), Chennai Campus, Chennai, Tamil Nadu 600127, India
- School of Electronics Engineering (SENSE), Vellore Institute of Technology (VIT), Chennai Campus, Chennai, Tamil Nadu 600127, India
| | - Sindhuja M
- School of Electronics Engineering (SENSE), Vellore Institute of Technology (VIT), Chennai Campus, Chennai, Tamil Nadu 600127, India
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Magisetty R, Park SM. New Era of Electroceuticals: Clinically Driven Smart Implantable Electronic Devices Moving towards Precision Therapy. MICROMACHINES 2022; 13:161. [PMID: 35208286 PMCID: PMC8876842 DOI: 10.3390/mi13020161] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/27/2021] [Revised: 01/14/2022] [Accepted: 01/18/2022] [Indexed: 12/15/2022]
Abstract
In the name of electroceuticals, bioelectronic devices have transformed and become essential for dealing with all physiological responses. This significant advancement is attributable to its interdisciplinary nature from engineering and sciences and also the progress in micro and nanotechnologies. Undoubtedly, in the future, bioelectronics would lead in such a way that diagnosing and treating patients' diseases is more efficient. In this context, we have reviewed the current advancement of implantable medical electronics (electroceuticals) with their immense potential advantages. Specifically, the article discusses pacemakers, neural stimulation, artificial retinae, and vagus nerve stimulation, their micro/nanoscale features, and material aspects as value addition. Over the past years, most researchers have only focused on the electroceuticals metamorphically transforming from a concept to a device stage to positively impact the therapeutic outcomes. Herein, the article discusses the smart implants' development challenges and opportunities, electromagnetic field effects, and their potential consequences, which will be useful for developing a reliable and qualified smart electroceutical implant for targeted clinical use. Finally, this review article highlights the importance of wirelessly supplying the necessary power and wirelessly triggering functional electronic circuits with ultra-low power consumption and multi-functional advantages such as monitoring and treating the disease in real-time.
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Affiliation(s)
- RaviPrakash Magisetty
- Department of Convergence IT Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea;
| | - Sung-Min Park
- Department of Convergence IT Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea;
- Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
- Department of Mechanical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
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Nano-Biomaterials for Retinal Regeneration. NANOMATERIALS 2021; 11:nano11081880. [PMID: 34443710 PMCID: PMC8399153 DOI: 10.3390/nano11081880] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/14/2021] [Revised: 07/14/2021] [Accepted: 07/19/2021] [Indexed: 12/22/2022]
Abstract
Nanoscience and nanotechnology have revolutionized key areas of environmental sciences, including biological and physical sciences. Nanoscience is useful in interconnecting these sciences to find new hybrid avenues targeted at improving daily life. Pharmaceuticals, regenerative medicine, and stem cell research are among the prominent segments of biological sciences that will be improved by nanostructure innovations. The present review was written to present a comprehensive insight into various emerging nanomaterials, such as nanoparticles, nanowires, hybrid nanostructures, and nanoscaffolds, that have been useful in mice for ocular tissue engineering and regeneration. Furthermore, the current status, future perspectives, and challenges of nanotechnology in tracking cells or nanostructures in the eye and their use in modified regenerative ophthalmology mechanisms have also been proposed and discussed in detail. In the present review, various research findings on the use of nano-biomaterials in retinal regeneration and retinal remediation are presented, and these findings might be useful for future clinical applications.
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Ha Y, Yoo HJ, Shin S, Jun SB. Hemispherical Microelectrode Array for Ex Vivo Retinal Neural Recording. MICROMACHINES 2020; 11:mi11050538. [PMID: 32466300 PMCID: PMC7281771 DOI: 10.3390/mi11050538] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/23/2020] [Revised: 05/21/2020] [Accepted: 05/22/2020] [Indexed: 12/13/2022]
Abstract
To investigate the neuronal visual encoding process in the retina, researchers have performed in vitro and ex vivo electrophysiological experiments using animal retinal tissues. The microelectrode array (MEA) has become a key component in retinal experiments because it enables simultaneous neural recording from a population of retinal neurons. However, in most retinal experiments, it is inevitable that the retinal tissue is flattened on the planar MEA, becoming deformed from the original hemispherical shape. During the tissue deforming process, the retina is subjected to mechanical stress, which can induce abnormal physiological conditions. To overcome this problem, in this study, we propose a hemispherical MEA with a curvature that allows retinal tissues to adhere closely to electrodes without tissue deformation. The electrode array is fabricated by stretching a thin, flexible polydimethylsiloxane (PDMS) electrode layer onto a hemispherical substrate. To form micro patterns of electrodes, laser processing is employed instead of conventional thin-film microfabrication processes. The feasibility for neural recording from retinal tissues using this array is shown by conducting ex vivo retinal experiments. We anticipate that the proposed techniques for hemispherical MEAs can be utilized not only for ex vivo retinal studies but also for various flexible electronics.
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Affiliation(s)
- Yoonhee Ha
- Department of Electronic and Electrical Engineering, Ewha Womans University, Seoul 03760, Korea; (Y.H.); (H.-J.Y.)
| | - Hyun-Ji Yoo
- Department of Electronic and Electrical Engineering, Ewha Womans University, Seoul 03760, Korea; (Y.H.); (H.-J.Y.)
| | - Soowon Shin
- Department of Bioengineering, TODOC Co., Ltd., Seoul 08394, Korea;
| | - Sang Beom Jun
- Department of Electronic and Electrical Engineering, Ewha Womans University, Seoul 03760, Korea; (Y.H.); (H.-J.Y.)
- Department of Brain and Cognitive Sciences, Ewha Womans University, Seoul 03760, Korea
- Correspondence: ; Tel.: +82-2-3277-3892
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Sun X, Zhang T, Yu L, Xu L, Wang J. Three-dimensional a-Si/a-Ge radial heterojunction near-infrared photovoltaic detector. Sci Rep 2019; 9:19752. [PMID: 31875005 PMCID: PMC6930292 DOI: 10.1038/s41598-019-56374-2] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/05/2019] [Accepted: 12/05/2019] [Indexed: 11/09/2022] Open
Abstract
In this work, three-dimensional (3D) radial heterojunction photodetectors (PD) were constructed over vertical crystalline Si nanowires (SiNWs), with stacked hydrogenated amorphous germanium (a-Ge:H)/a-Si:H thin film layer as absorbers. The hetero absorber layer is designed to benefit from the type-II band alignment at the a-Ge/a-Si hetero-interface, which could help to enable an automated photo-carrier separation without exterior power supply. By inserting a carefully controlled a-Si passivation layer between the a-Ge:H layer and the p-type SiNWs, we demonstrate first a convenient fabrication of a new hetero a-Ge/a-Si structure operating as self-powered photodetectors (PD) in the near-infrared (NIR) range up to 900 nm, indicating a potential to serve as low cost, flexible and high performance radial junction sensing units for NIR imaging and PD applications.
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Affiliation(s)
- Xiaolin Sun
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- Institute of Electronics Information Engineering, Sanjiang University, Nanjing, 210012, China
| | - Ting Zhang
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Linwei Yu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Ling Xu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
| | - Junzhuan Wang
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
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Jang S, Sung J, Chang B, Kim T, Ko H, Koo KI, Cho DID. Characterization of the Piezoresistive Effects of Silicon Nanowires. SENSORS 2018; 18:s18103304. [PMID: 30275417 PMCID: PMC6210127 DOI: 10.3390/s18103304] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/18/2018] [Revised: 09/27/2018] [Accepted: 09/28/2018] [Indexed: 01/17/2023]
Abstract
Silicon nanowires (SiNWs) have received attention in recent years due to their anomalous piezoresistive (PZR) effects. Although the PZR effects of SiNWs have been extensively researched, they are still not fully understood. Herein, we develop a new model of the PZR effects of SiNWs to characterize the PZR effects. First, the resistance of SiNW is modeled based on the surface charge density. The characteristics of SiNW, such as surface charge and effective conducting area, can be estimated by using this resistance model. Then, PZR effects are modeled based on stress concentration and piezopinch effects. Stress concentration as a function of the physical geometry of SiNWs can amplify PZR effects by an order of magnitude. The piezopinch effects can also result in increased PZR effects that are at least two times greater than that of bulk silicon. Experimental results show that the proposed model can predict the PZR effects of SiNWs accurately.
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Affiliation(s)
- Seohyeong Jang
- Department of Electrical and Computer Engineering, Automation System Research Institute (ASRI), Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 08826, Korea.
| | - Jinwoo Sung
- Department of Electrical and Computer Engineering, Automation System Research Institute (ASRI), Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 08826, Korea.
| | - Bobaro Chang
- Department of Electrical and Computer Engineering, Automation System Research Institute (ASRI), Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 08826, Korea.
| | - Taeyup Kim
- Department of Electrical and Computer Engineering, Automation System Research Institute (ASRI), Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 08826, Korea.
| | - Hyoungho Ko
- Department of Electronics Engineering, Chungnam National University, Daejeon 34134, Korea.
| | - Kyo-In Koo
- Department of Biomedical Engineering, University of Ulsan, Ulsan 44610, Korea.
| | - Dong-Il Dan Cho
- Department of Electrical and Computer Engineering, Automation System Research Institute (ASRI), Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 08826, Korea.
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Zhao X, Tu P, He J, Zhu H, Dan Y. Cryogenically probing the surface trap states of single nanowires passivated with self-assembled molecular monolayers. NANOSCALE 2017; 10:82-86. [PMID: 29210410 DOI: 10.1039/c7nr06925a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Optoelectronically probing the trap state density of single nanoscale devices is a powerful in situ nondestructive technique that is of significance for developing high gain photoconductors by surface engineering. However, the previously demonstrated optoelectronic methods are based on the exponential transient photoresponse assumption and only trap states in a very narrow bandgap region can be probed. In this Letter, we demonstrate a cryogenic technique that is capable of measuring the density of surface trap states in the full half bandgap without the exponential transient photoresponse assumption. The technique is applied to an array of silicon nanowire photoconductors that are fabricated on silicon-on-insulator (SOI) wafer by the top-down approach. Diethyl 1-propylphosphonate (DPP) and hexadecane molecular monolayers are self-assembled on silicon nanowire surfaces as the passivation layer in comparison with dry oxide passivation. The surface trap state density of the dry oxide passivated nanowires exponentially increases from the bandgap center, reaching a peak of ∼5 × 1013 cm-2 eV-1 at 50 meV below the conduction band. The defect state density is significantly suppressed after DPP and hexadecane molecules are grafted onto the nanowire surfaces via covalent bonds. The experimental observations are consistent with the density functional theory calculations.
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Affiliation(s)
- Xingyan Zhao
- University of Michigan - Shanghai Jiao Tong Uniersity Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China.
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