|
1
|
Pruchnik BC, Fidelus JD, Gacka E, Mika K, Zaraska L, Sulka GD, Gotszalk TP. Atomic force microscopy in mechanical measurements of single nanowires. Ultramicroscopy 2024; 263:113985. [PMID: 38759603 DOI: 10.1016/j.ultramic.2024.113985] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/10/2024] [Revised: 03/21/2024] [Accepted: 05/06/2024] [Indexed: 05/19/2024]
Abstract
In this paper, we present the results of mechanical measurement of single nanowires (NWs) in a repeatable manner. Substrates with specifically designed mechanical features were used for NW placement and localization for measurements of properties such as Young's modulus or tensile strength of NW with an atomic force microscopy (AFM) system. Dense arrays of zinc oxide (ZnO) nanowires were obtained by one-step anodic oxidation of metallic Zn foil in a sodium bicarbonate electrolyte and thermal post-treatment. ZnO NWs with a hexagonal wurtzite structure were fixed to the substrates using focused electron beam-induced deposition (FEBID) and were annealed at different temperatures in situ. We show a 10-fold change in the properties of annealed materials as well as a difference in the properties of the NW materials from their bulk values with pre-annealed Young modulus at the level of 20 GPa and annealed reaching 200 GPa. We found the newly developed method to be much more versatile, allowing for in situ operations of NWs, including measurements with different methods of scanning probe microscopy.
Collapse
Affiliation(s)
- Bartosz C Pruchnik
- Department of Nanometrology, Wrocław University of Science and Technology, Janiszewskiego 11/17, Wrocław 50-370, Poland
| | - Janusz D Fidelus
- Time and Length Department, Central Office of Measures, Elektoralna 2, Warsaw 00-139, Poland.
| | - Ewelina Gacka
- Department of Nanometrology, Wrocław University of Science and Technology, Janiszewskiego 11/17, Wrocław 50-370, Poland
| | - Krystyna Mika
- Department of Physical Chemistry and Electrochemistry Department, Faculty of Chemistry, Jagiellonian University, Gronostajowa 2, Kraków 30-387, Poland
| | - Leszek Zaraska
- Department of Physical Chemistry and Electrochemistry Department, Faculty of Chemistry, Jagiellonian University, Gronostajowa 2, Kraków 30-387, Poland
| | - Grzegorz D Sulka
- Department of Physical Chemistry and Electrochemistry Department, Faculty of Chemistry, Jagiellonian University, Gronostajowa 2, Kraków 30-387, Poland
| | - Teodor P Gotszalk
- Department of Nanometrology, Wrocław University of Science and Technology, Janiszewskiego 11/17, Wrocław 50-370, Poland
| |
Collapse
|
|
2
|
Raman S, K V M, S V, Sankar A R. Silicon nanowire piezoresistor and its applications: a review. NANOTECHNOLOGY 2024; 35:362003. [PMID: 38848697 DOI: 10.1088/1361-6528/ad555e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2024] [Accepted: 06/07/2024] [Indexed: 06/09/2024]
Abstract
Monocrystalline bulk silicon with doped impurities has been the widely preferred piezoresistive material for the last few decades to realize micro-electromechanical system (MEMS) sensors. However, there has been a growing interest among researchers in the recent past to explore other piezoresistive materials with varied advantages in order to realize ultra-miniature high-sensitivity sensors for area-constrained applications. Of the various alternative piezoresistive materials, silicon nanowires (SiNWs) are an attractive choice due to their benefits of nanometre range dimensions, giant piezoresistive coefficients, and compatibility with the integrated circuit fabrication processes. This review article elucidates the fundamentals of piezoresistance and its existence in various materials, including silicon. It comprehends the piezoresistance effect in SiNWs based on two different biasing techniques, viz., (i) ungated and (ii) gated SiNWs. In addition, it presents the application of piezoresistive SiNWs in MEMS-based pressure sensors, acceleration sensors, flow sensors, resonators, and strain gauges.
Collapse
Affiliation(s)
- Srinivasan Raman
- Centre for Innovation and Product Development (CIPD), Vellore Institute of Technology (VIT), Chennai campus, Chennai 600 127, Tamil Nadu, India
- School of Electronics Engineering (SENSE), Vellore Institute of Technology (VIT), Chennai campus, Chennai 600 127, Tamil Nadu, India
| | - Meena K V
- Mirrorcle Technologies Inc, Richmond, CA 94804, United States of America
| | - Vetrivel S
- Saint-Gobain Research India, IIT Madras Research Park, Taramani, Chennai 600 113, Tamil Nadu, India
| | - Ravi Sankar A
- Centre for Innovation and Product Development (CIPD), Vellore Institute of Technology (VIT), Chennai campus, Chennai 600 127, Tamil Nadu, India
- School of Electronics Engineering (SENSE), Vellore Institute of Technology (VIT), Chennai campus, Chennai 600 127, Tamil Nadu, India
| |
Collapse
|
|
3
|
Pruchnik BC, Fidelus JD, Gacka E, Kwoka K, Pruchnik J, Piejko A, Usydus Ł, Zaraska L, Sulka GD, Piasecki T, Gotszalk TP. Four-Point Measurement Setup for Correlative Microscopy of Nanowires. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2451. [PMID: 37686959 PMCID: PMC10490214 DOI: 10.3390/nano13172451] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2023] [Revised: 08/17/2023] [Accepted: 08/25/2023] [Indexed: 09/10/2023]
Abstract
The measurement method, which utilizes nanomanipulation of the nanowires onto a specially prepared substrate, was presented. It introduced a four-point resistance measurement setup on a chip suited for scanning probe microscopy measurements, integrating connectors and a nanowire specimen. A study on the resistance and resistivity of the thermally post-treated ZnO nanowires at 200 °C and 300 °C in air showed the dependence of these electrical parameters on the annealing temperature. The investigations of the electrical properties of blocks built on the basis of nanowires and their related devices could provide a useful guide not only for designing, fabricating and optimizing electromechanical nanodevices based on nanowires but also for their safe operation in future electronic applications.
Collapse
Affiliation(s)
- Bartosz C. Pruchnik
- Department of Nanometrology, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-370 Wroclaw, Poland; (B.C.P.); (E.G.); (K.K.); (J.P.); (A.P.); (T.P.); (T.P.G.)
| | - Janusz D. Fidelus
- Time and Length Department, Central Office of Measures, Elektoralna 2, 00-139 Warsaw, Poland
| | - Ewelina Gacka
- Department of Nanometrology, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-370 Wroclaw, Poland; (B.C.P.); (E.G.); (K.K.); (J.P.); (A.P.); (T.P.); (T.P.G.)
| | - Krzysztof Kwoka
- Department of Nanometrology, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-370 Wroclaw, Poland; (B.C.P.); (E.G.); (K.K.); (J.P.); (A.P.); (T.P.); (T.P.G.)
| | - Julia Pruchnik
- Department of Nanometrology, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-370 Wroclaw, Poland; (B.C.P.); (E.G.); (K.K.); (J.P.); (A.P.); (T.P.); (T.P.G.)
| | - Adrianna Piejko
- Department of Nanometrology, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-370 Wroclaw, Poland; (B.C.P.); (E.G.); (K.K.); (J.P.); (A.P.); (T.P.); (T.P.G.)
| | - Łukasz Usydus
- Electricity and Radiation Department, Central Office of Measures, Elektoralna 2, 00-139 Warsaw, Poland;
| | - Leszek Zaraska
- Department of Physical Chemistry and Electrochemistry, Faculty of Chemistry, Jagiellonian University, Gronostajowa 2, 30-387 Krakow, Poland; (L.Z.); (G.D.S.)
| | - Grzegorz D. Sulka
- Department of Physical Chemistry and Electrochemistry, Faculty of Chemistry, Jagiellonian University, Gronostajowa 2, 30-387 Krakow, Poland; (L.Z.); (G.D.S.)
| | - Tomasz Piasecki
- Department of Nanometrology, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-370 Wroclaw, Poland; (B.C.P.); (E.G.); (K.K.); (J.P.); (A.P.); (T.P.); (T.P.G.)
| | - Teodor P. Gotszalk
- Department of Nanometrology, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-370 Wroclaw, Poland; (B.C.P.); (E.G.); (K.K.); (J.P.); (A.P.); (T.P.); (T.P.G.)
| |
Collapse
|
|
4
|
Raman S, A RS, M S. Advances in silicon nanowire applications in energy generation, storage, sensing, and electronics: a review. NANOTECHNOLOGY 2023; 34:182001. [PMID: 36640446 DOI: 10.1088/1361-6528/acb320] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/12/2022] [Accepted: 01/14/2023] [Indexed: 06/17/2023]
Abstract
Nanowire-based technological advancements thrive in various fields, including energy generation and storage, sensors, and electronics. Among the identified nanowires, silicon nanowires (SiNWs) attract much attention as they possess unique features, including high surface-to-volume ratio, high electron mobility, bio-compatibility, anti-reflection, and elasticity. They were tested in domains of energy generation (thermoelectric, photo-voltaic, photoelectrochemical), storage (lithium-ion battery (LIB) anodes, super capacitors), and sensing (bio-molecules, gas, light, etc). These nano-structures were found to improve the performance of the system in terms of efficiency, stability, sensitivity, selectivity, cost, rapidity, and reliability. This review article scans and summarizes the significant developments that occurred in the last decade concerning the application of SiNWs in the fields of thermoelectric, photovoltaic, and photoelectrochemical power generation, storage of energy using LIB anodes, biosensing, and disease diagnostics, gas and pH sensing, photodetection, physical sensing, and electronics. The functionalization of SiNWs with various nanomaterials and the formation of heterostructures for achieving improved characteristics are discussed. This article will be helpful to researchers in the field of nanotechnology about various possible applications and improvements that can be realized using SiNW.
Collapse
Affiliation(s)
- Srinivasan Raman
- Centre for Innovation and Product Development (CIPD), Vellore Institute of Technology (VIT), Chennai Campus, Chennai, Tamil Nadu 600127, India
- School of Electronics Engineering (SENSE), Vellore Institute of Technology (VIT), Chennai Campus, Chennai, Tamil Nadu 600127, India
| | - Ravi Sankar A
- Centre for Innovation and Product Development (CIPD), Vellore Institute of Technology (VIT), Chennai Campus, Chennai, Tamil Nadu 600127, India
- School of Electronics Engineering (SENSE), Vellore Institute of Technology (VIT), Chennai Campus, Chennai, Tamil Nadu 600127, India
| | - Sindhuja M
- School of Electronics Engineering (SENSE), Vellore Institute of Technology (VIT), Chennai Campus, Chennai, Tamil Nadu 600127, India
| |
Collapse
|