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Feng T, Yu D, Wu B, Wang H. A Micro-Hotplate-Based Oven-Controlled System Used to Improve the Frequency Stability of MEMS Resonators. MICROMACHINES 2023; 14:1222. [PMID: 37374808 DOI: 10.3390/mi14061222] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/06/2023] [Revised: 05/31/2023] [Accepted: 06/06/2023] [Indexed: 06/29/2023]
Abstract
This paper introduces a chip-level oven-controlled system for improving the temperature stability of MEMS resonators wherein we designed the resonator and the micro-hotplate using MEMS technology, then bounding them in a package shell at the chip level. The resonator is transduced by AlN film, and its temperature is monitored by temperature-sensing resistors on both sides. The designed micro-hotplate is placed at the bottom of the resonator chip as a heater and insulated by airgel. The PID pulse width modulation (PWM) circuit controls the heater according to the temperature detection result to provide a constant temperature for the resonator. The proposed oven-controlled MEMS resonator (OCMR) exhibits a frequency drift of 3.5 ppm. Compared with the previously reported similar methods, first, the OCMR structure using airgel combined with a micro-hotplate is proposed for the first time, and the working temperature is extended from 85 °C to 125 °C. Second, our work does not require redesign or additional constraints on the MEMS resonator, so the proposed structure is more general and can be practically applied to other MEMS devices that require temperature control.
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Affiliation(s)
- Tianren Feng
- College of Information Science and Technology, Beijing University of Chemical Technology, Beijing 100029, China
| | - Duli Yu
- College of Information Science and Technology, Beijing University of Chemical Technology, Beijing 100029, China
| | - Bo Wu
- Guangdong Institute of Semiconductor Micro-Nano Manufacturing Technology, Foshan 528000, China
| | - Hui Wang
- Guangdong Institute of Semiconductor Micro-Nano Manufacturing Technology, Foshan 528000, China
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Chen Z, Jia Q, Liu W, Yuan Q, Zhu Y, Yang J, Yang F. Dominant Loss Mechanisms of Whispering Gallery Mode RF-MEMS Resonators with Wide Frequency Coverage. SENSORS (BASEL, SWITZERLAND) 2020; 20:E7017. [PMID: 33302455 PMCID: PMC7764441 DOI: 10.3390/s20247017] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/09/2020] [Revised: 12/05/2020] [Accepted: 12/06/2020] [Indexed: 11/16/2022]
Abstract
This work investigates the dominant energy dissipations of the multi-frequency whispering gallery mode (WGM) resonators to provide an insight into the loss mechanisms of the devices. An extensive theory for each loss source was established and experimentally testified. The squeezed film damping (SFD) is a major loss for all the WGMs at atmosphere, which is distinguished from traditional bulk acoustic wave (BAW) resonators where the high-order modes suffer less from the air damping. In vacuum, the SFD is negligible, and the frequency-dependent Akhiezer damping (AKE) has significant effects on different order modes. For low-order WGMs, the AKE is limited, and the anchor loss behaves as the dominant loss. For high-order modes with an extended nodal region, the anchor loss is reduced, and the AKE determines the Q values. Substantial Q enhancements over four times and an excellent f × Q product up to 6.36 × 1013 at 7 K were achieved.
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Affiliation(s)
- Zeji Chen
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (Z.C.); (Q.J.); (W.L.); (Q.Y.); (Y.Z.); (F.Y.)
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- State Key Laboratory of Transducer Technology, Shanghai 200050, China
| | - Qianqian Jia
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (Z.C.); (Q.J.); (W.L.); (Q.Y.); (Y.Z.); (F.Y.)
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- State Key Laboratory of Transducer Technology, Shanghai 200050, China
| | - Wenli Liu
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (Z.C.); (Q.J.); (W.L.); (Q.Y.); (Y.Z.); (F.Y.)
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- State Key Laboratory of Transducer Technology, Shanghai 200050, China
| | - Quan Yuan
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (Z.C.); (Q.J.); (W.L.); (Q.Y.); (Y.Z.); (F.Y.)
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yinfang Zhu
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (Z.C.); (Q.J.); (W.L.); (Q.Y.); (Y.Z.); (F.Y.)
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- State Key Laboratory of Transducer Technology, Shanghai 200050, China
| | - Jinling Yang
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (Z.C.); (Q.J.); (W.L.); (Q.Y.); (Y.Z.); (F.Y.)
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- State Key Laboratory of Transducer Technology, Shanghai 200050, China
| | - Fuhua Yang
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (Z.C.); (Q.J.); (W.L.); (Q.Y.); (Y.Z.); (F.Y.)
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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