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Ullah K, Khan SA, Zaman A, Sarker MR, Ali A, Tirth V, Alsuhaibani AM, Algahtani A, Al-Mughanam T, Refat MS, Sahrani S, Abrar M. Impact of Cobalt Doping on the Structural, Optical, and Dielectric Properties of MgAl 2O 4 Spinel Material. ACS OMEGA 2023; 8:29959-29965. [PMID: 37636967 PMCID: PMC10448643 DOI: 10.1021/acsomega.3c00541] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/26/2023] [Accepted: 05/24/2023] [Indexed: 08/29/2023]
Abstract
Nanomaterials (NMs) with structural, optical, and dielectric properties are called functional or smart materials and have favorable applications in various fields of material science and nanotechnology. Pure and Co-doped MgAl2O4 were synthesized by using the sol-gel combustion method. A systematic investigation was carried out to understand the effects of the Co concentration on the crystalline phase, morphology, and optical and dielectric properties of Co-doped MgAl2O4. X-ray diffraction confirmed the cubic spinel structure with the Fd3̅m space group, and there was no impurity phase, while the surface morphology of the samples was investigated by scanning electron microscopy. The dielectric properties of the synthesized material are investigated using an LCR meter with respect to the variation in frequency (1-2 GHz), and their elemental composition has been examined through the energy-dispersive X-ray technique. The existence of the metal-oxygen Mg-Al-O bond has been confirmed by Fourier transform infrared spectroscopy. The value of the dielectric constant decreases with the increasing frequency and Co concentration. The optical behaviors of the Co2+-doped MgAl2O4 reveal that the optical properties were enhanced by increasing the cobalt concentration, which ultimately led to a narrower band gap, which make them exquisite and suitable for energy storage applications, especially for super capacitors. This work aims to focus on the effect of cobalt ions in different concentrations on structural, optical, and dielectric properties.
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Affiliation(s)
- Kamran Ullah
- Department
of Physics, Hazara University, Mansehra 21300, Pakistan
| | - Shoaib Ali Khan
- Department
of Physics, Hazara University, Mansehra 21300, Pakistan
| | - Abid Zaman
- Department
of Physics, Riphah International University, Islamabad 44000, Pakistan
| | - Mahidur R. Sarker
- Institute
of Visual Informatics, Universiti Kebangsaan
Malaysia, Bangi 43600, Malaysia
| | - Asad Ali
- Department
of Physics, Riphah International University, Islamabad 44000, Pakistan
- Department
of Physics, Government Post Graduate College, Nowshera 24100, Khyber Pakhtunkhwa, Pakistan
| | - Vineet Tirth
- Mechanical
Engineering Department, College of Engineering, King Khalid University, Abha 61421, Asir, Kingdom of Saudi Arabia
- Research
Center for Advanced Materials Science (RCAMS), King Khalid University, Guraiger, P.O. Box 9004, Abha 61413, Asir, Kingdom of Saudi Arabia
| | - Amnah Mohammed Alsuhaibani
- Department
of Physical Sport Science, College of Education, Princess Nourah bint Abdulrahman University, P.O. Box 84428, Riyadh 11671, Saudi Arabia
| | - Ali Algahtani
- Mechanical
Engineering Department, College of Engineering, King Khalid University, Abha 61421, Asir, Kingdom of Saudi Arabia
- Research
Center for Advanced Materials Science (RCAMS), King Khalid University, Guraiger, P.O. Box 9004, Abha 61413, Asir, Kingdom of Saudi Arabia
| | - Tawfiq Al-Mughanam
- Department
of Mechanical Engineering, College of Engineering, King Faisal University, P.O. Box 380, Al-Ahsa 31982, Saudi Arabia
| | - Moamen S. Refat
- Department
of Chemistry, College of Science, Taif University, P.O. Box 11099, Taif 21944, Saudi Arabia
| | - Shafrida Sahrani
- Institute
of Visual Informatics, Universiti Kebangsaan
Malaysia, Bangi 43600, Malaysia
| | - Muhammad Abrar
- Department
of Physics, Hazara University, Mansehra 21300, Pakistan
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Noh W, Go Y, An H. Reduced Graphene Oxide/Polyelectrolyte Multilayers for Fast Resistive Humidity Sensing. SENSORS (BASEL, SWITZERLAND) 2023; 23:1977. [PMID: 36850575 PMCID: PMC9965716 DOI: 10.3390/s23041977] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/15/2023] [Revised: 02/06/2023] [Accepted: 02/09/2023] [Indexed: 06/18/2023]
Abstract
Fast humidity sensors are of interest due to their potential application in new sensing technologies such as wearable personal healthcare and environment sensing devices. However, the realization of rapid response/recovery humidity sensors remains challenging primarily due to the sluggish adsorption/desorption of water molecules, which particularly impacts the response/recovery times. Moreover, another key factor for fast humidity sensing, namely the attainment of equal response and recovery times, has often been neglected. Herein, the layer-by-layer (LbL) assembly of a reduced graphene oxide (rGO)/polyelectrolyte is demonstrated for application in fast humidity sensors. The resulting sensors exhibit fast response and recovery times of 0.75 and 0.85 s (corresponding to times per RH range of 0.24 and 0.27 s RH-1, respectively), providing a difference of only 0.1 s (corresponding to 0.03 s RH-1). This performance exceeds that of the majority of previously reported graphene oxide (GO)- or rGO-based humidity sensors. In addition, the polyelectrolyte deposition time is shown to be key to controlling the humidity sensing kinetics. The as-developed rapid sensing system is expected to provide useful guidance for the tailorable design of fast humidity sensors.
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Suthar M, Roy P. Evaluation of magnetic & humidity-dielectric response of tungsten substituted Y-type barium hexaferrite (Ba2Co2WxFe12-xO22, 0.0 ≤ x ≤ 2.0) synthesized by solid-state reaction route. INORG CHEM COMMUN 2023. [DOI: 10.1016/j.inoche.2023.110554] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/22/2023]
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