The Thermoelectric Properties of n-Type Bismuth Telluride: Bismuth Selenide Alloys Bi2Te3-x Se x

In vitro and in vivo biocompatibility assessment of chalcogenide thermoelectrics as implants

The ability of thermoelectric materials to generate electricity in response to local temperature gradients makes them a potentially promising solution for the regulation of cellular functions and reconstruction of tissues. Biocompatibility of implants is a crucial attribute for the successful integration of thermoelectric techniques in biomedical applications. This work focuses on the in vitro and in vivo evaluation of biocompatibility for 12 typical chalcogenide thermoelectrics, which are composed of biocompatible elements. Ag2Se, SnSe, Bi2Se3, Bi2Te2.88Se0.12 and Bi2Te3, each with a released ion concentration lower than 10 ppm in extracts, exhibited favorable biocompatibility, including cell viability, adhesion, and hemocompatibility, as observed in initial in vitro assessments. Moreover, in vivo biocompatibility assessment, achieved by hematological and histopathological analyses in the rat subcutaneous model, further substantiated the biocompatibility of Ag2Se, Bi2Se3, and Bi2Te3, with each possessing superior thermoelectric performance at room temperature. This work offers robust evidence to promote Ag2Se, Bi2Se3, and Bi2Te3 as potential thermoelectric biomaterials, establishing a foundation for their future applications in biomedicine.

Transport properties of indium-alloyed and indium telluride nanostructured bismuth telluride

Nanostructured thermoelectric materials ideally reduce lattice thermal conductivity without harming the electrical properties. Thus, to truly improve the thermoelectric performance, the quality factor, which is proportional to the weighted mobility divided by the lattice thermal conductivity of the material, must be improved. Precipitates of In2Te3 form in the state-of-the-art Bi2Te3 with crystallographic alignment to the Bi2Te3 structure. Like epitaxy in films, this can be called endotaxy in solids. This natural epitaxy in a 3-dimensional solid is ideally situated to scatter phonons but produces minimal electronic scattering and, therefore, maintains high mobility. Here, we study the effects of In-alloying in Bi2Te3 at high In concentrations (about 4 at%), enough to produce the endotaxial microstructure. It is found that such concentrations of indium in Bi2Te3 significantly alter the electronic structure, reducing the effective mass and weighted mobility so significantly as to effectively destroy the thermoelectric properties even though the lattice thermal conductivity is successfully reduced.

Topological Electronic Transition Contributing to Improved Thermoelectric Performance in p-Type Mg3Sb2- xBix Solid Solutions

Topological electronic transition is the very promising strategy for achieving high band degeneracy (NV) and for optimizing thermoelectric performance. Herein, this work verifies in p-type Mg3Sb2- xBix that topological electronic transition could be the key mechanism responsible for elevating the NV of valence band edge from 1 to 6, leading to much improved thermoelectric performance. Through comprehensive spectroscopy characterizations and theoretical calculations of electronic structures, the topological electronic transition from trivial semiconductor is unambiguously demonstrated to topological semimetal of Mg3Sb2- xBix with increasing the Bi content, due to the strong spin-orbit coupling of Bi and the band inversion. The distinct evolution of Fermi surface configuration and the multivalley valence band edge with NV of 6 are discovered in the Bi-rich compositions, while a peculiar two-step band inversion is revealed for the first time in the end compound Mg3Bi2. As a result, the optimal p-type Mg3Sb0.5Bi1.5 simultaneously obtains a positive bandgap and high NV of 6, and thus acquires the largest thermoelectric power factor of 3.54 and 6.93 µW cm-1 K-2 at 300 and 575 K, respectively, outperforming the values in other compositions. This work provides important guidance on improving thermoelectric performance of p-type Mg3Sb2- xBix utilizing the topological electronic transition.

Bi2Te3-Based Thermoelectric Modules for Efficient and Reliable Low-Grade Heat Recovery

Bismuth-telluride-based alloy has long been considered as the most promising candidate for low-grade waste heat power generation. However, optimizing the thermoelectric performance of n-type Bi2Te3 is more challenging than that of p-type counterparts due to its greater sensitivity to texture, and thus limits the advancement of thermoelectric modules. Herein, the thermoelectric performance of n-type Bi2Te3 is enhanced by incorporating a small amount of CuGaTe2, resulting in a peak ZT of 1.25 and a distinguished average ZT of 1.02 (300-500 K). The decomposed Cu+ strengthens interlayer interaction, while Ga+ optimizes carrier concentration within an appropriate range. Simultaneously, the emerged numerous defects, such as small-angle grain boundaries, twin boundaries, and dislocations, significantly suppresses the lattice thermal conductivity. Based on the size optimization by finite element modelling, the constructed thermoelectric module yields a high conversion efficiency of 6.9% and output power density of 0.31 W cm-2 under a temperature gradient of 200 K. Even more crucially, the efficiency and output power little loss after subjecting the module to 40 thermal cycles lasting for 6 days. This study demonstrates the efficient and reliable Bi2Te3-based thermoelectric modules for broad applications in low-grade heat harvest.

Unraveling electronic origins for boosting thermoelectric performance of p-type (Bi,Sb)2Te3

P-type Bi2-xSbxTe3 compounds are crucial for thermoelectric applications at room temperature, with Bi0.5Sb1.5Te3 demonstrating superior performance, attributed to its maximum density-of-states effective mass (m*). However, the underlying electronic origin remains obscure, impeding further performance optimization. Herein, we synthesized high-quality Bi2-xSbxTe3 (00 l) films and performed comprehensive angle-resolved photoemission spectroscopy (ARPES) measurements and band structure calculations to shed light on the electronic structures. ARPES results directly evidenced that the band convergence along the [Formula: see text]-[Formula: see text] direction contributes to the maximum m* of Bi0.5Sb1.5Te3. Moreover, strategic manipulation of intrinsic defects optimized the hole density of Bi0.5Sb1.5Te3, allowing the extra valence band along [Formula: see text]-[Formula: see text] to contribute to the electrical transport. The synergy of the above two aspects documented the electronic origins of the Bi0.5Sb1.5Te3's superior performance that resulted in an extraordinary power factor of ~5.5 milliwatts per meter per square kelvin. The study offers valuable guidance for further performance optimization of p-type Bi2-xSbxTe3.

General strategy for developing thick-film micro-thermoelectric coolers from material fabrication to device integration

Micro-thermoelectric coolers are emerging as a promising solution for high-density cooling applications in confined spaces. Unlike thin-film micro-thermoelectric coolers with high cooling flux at the expense of cooling temperature difference due to very short thermoelectric legs, thick-film micro-thermoelectric coolers can achieve better comprehensive cooling performance. However, they still face significant challenges in both material preparation and device integration. Herein, we propose a design strategy which combines Bi2Te3-based thick film prepared by powder direct molding with micro-thermoelectric cooler integrated via phase-change batch transfer. Accurate thickness control and relatively high thermoelectric performance can be achieved for the thick film, and the high-density-integrated thick-film micro-thermoelectric cooler exhibits excellent performance with maximum cooling temperature difference of 40.6 K and maximum cooling flux of 56.5 W·cm-2 at room temperature. The micro-thermoelectric cooler also shows high temperature control accuracy (0.01 K) and reliability (over 30000 cooling cycles). Moreover, the device demonstrates remarkable capacity in power generation with normalized power density up to 214.0 μW · cm-2 · K-2. This study provides a general and scalable route for developing high-performance thick-film micro-thermoelectric cooler, benefiting widespread applications in thermal management of microsystems.

Are topological insulators promising thermoelectrics?

Some of the best thermoelectric (TE) materials to date are also topological insulators (TIs). While many studies have investigated the effects of topologically-protected TI surface states on TE properties, the conditions needed to realize such effects are quite different from typical operating conditions of TE devices for, e.g., power generation and room-temperature Peltier cooling. As a result, it is still unclear what properties of TIs, especially those related to the bulk band structure, are beneficial for TE performance, if any. Here, we perform high-throughput transport calculations using density functional theory to reveal that, within the same structure type, TIs tend to outperform normal insulators as TEs when properly optimized. The calculations also indicate that the TE performance is higher for TIs with strongly inverted bands. To explain these observations, we develop models based on Boltzmann transport theory which show that warping driven by band inversion, a key characteristic of TIs, is responsible for the high TE performance of TIs. We find that warping benefits the TE performance because of reduced transport mass and effectively higher valley degeneracy. Our results show that the band inversion strength is a critical property of a TI dictating the TE performance, and we suggest potential strategies to tune the inversion strength and enhance the TE performance in TIs, such as alloying and strain engineering. The study marks TIs as serious candidates for TE applications owing to band inversion-driven warping.

Decoupling Carrier-Phonon Scattering Boosts the Thermoelectric Performance of n-Type GeTe-Based Materials

The coupled relationship between carrier and phonon scattering severely limits the thermoelectric performance of n-type GeTe materials. Here, we provide an efficient strategy to enlarge grains and induce vacancy clusters for decoupling carrier-phonon scattering through the annealing optimization of n-type GeTe-based materials. Specifically, boundary migration is used to enlarge grains by optimizing the annealing time, while vacancy clusters are induced through the aggregation of Ge vacancies during annealing. Such enlarged grains can weaken carrier scattering, while vacancy clusters can strengthen phonon scattering, leading to decoupled carrier-phonon scattering. As a result, a ratio between carrier mobility and lattice thermal conductivity of ∼492.8 cm3 V-1 s-1 W-1 K and a peak ZT of ∼0.4 at 473 K are achieved in Ge0.67Pb0.13Bi0.2Te. This work reveals the critical roles of enlarged grains and induced vacancy clusters in decoupling carrier-phonon scattering and demonstrates the viability of fabricating high-performance n-type GeTe materials via annealing optimization.

High-Throughput Strategies in the Discovery of Thermoelectric Materials

Searching for new high-performance thermoelectric (TE) materials that are economical and environmentally friendly is an urgent task for TE society, but the advancements are greatly limited by the time-consuming and high cost of the traditional trial-and-error method. The significant progress achieved in the computing hardware, efficient computing methods, advance artificial intelligence algorithms, and rapidly growing material data have brought a paradigm shift in the investigation of TE materials. Many electrical and thermal performance descriptors are proposed and efficient high-throughput (HTP) calculation methods are developed with the purpose to quickly screen new potential TE materials from the material databases. Some HTP experiment methods are also developed which can increase the density of information obtained in a single experiment with less time and lower cost. In addition, machine learning (ML) methods are also introduced in thermoelectrics. In this review, the HTP strategies in the discovery of TE materials are systematically summarized. The applications of performance descriptor, HTP calculation, HTP experiment, and ML in the discovery of new TE materials are reviewed. In addition, the challenges and possible directions in future research are also discussed.

Achieving high thermoelectric conversion efficiency in Bi2Te3-based stepwise legs through bandgap tuning and chemical potential engineering

In this study, we show that the energy conversion efficiency in thermoelectric (TE) devices can be effectively improved through simultaneous optimization of carrier concentration, bandgap tuning, and fabrication of stepwise legs. n- and p-type Bi2Te3-based materials were selected as examples for testing the proposed approach. At first, the Boltzmann transport theory was employed to predict the optimal temperature-dependent carrier concentration for high thermoelectric performance over a broad temperature range. Then, the synthesized n-Bi2Te3-xSex and p-Bi2-xSbxTe3 solid solutions were tested to evaluate their suitability for fabricating the stepwise thermoelectric legs. The output energy characteristics of the designed TE devices were estimated using numerical modeling employing the finite element method. The theoretical simulation revealed an improvement in the conversion efficiency between the best homogeneous and stepwise TE legs from 8.8% to 10.1% and from 9.9% to 10.8% in p-type and n-type legs, respectively, which is much higher than the efficiency of the industrial thermoelectric modules (3-6%). The measured conversion efficiency of the fabricated n- and p-type stepwise legs reached very high values of 9.3% and 9.0%, respectively, at the relatively small temperature gradient of 375 K. This work suggests carrier concentration and bandgap engineering accompanied by the stepwise leg approach as powerful methods for achieving high energy conversion efficiency in thermoelectric converters.

Attaining High Figure of Merit in the N-Type Bi2Te2.7Se0.3-Ag2Te Composite System via Comprehensive Regulation of Its Thermoelectric Properties

n-Type Bi₂Te_2.7Se_0.3 (BTS) is the state-of-the-art thermoelectric material near room temperature. However, the figure of merit ZT of commercial BTS ingots is still limited and further improvement is imperative for their wide applications. Here, the results show that through dispersion of the Ag₂Te nanophase in BTS, one can not only elevate its power factor (PF) by as high as 14% (at 300 K) but also reduce its thermal conductivity κ_tot to as small as ∼29% (at 300 K). Experimental evidences show that the improved PF comes from both increased electron mobility via inhibited Te vacancies and enhanced thermopower due to energy filtering effect, while the reduction of κ_tot originates from the drop of both electronic thermal conductivity largely owing to the reduced number of vacancy V_Te^·· and intensified phonon scattering chiefly from the dispersed Ag₂Te nanophase. Consequently, the largest ZT_max = 1.31 (at 350 K) and average ZT_ave = 1.16 (300-500 K) are achieved for the Bi₂Te_2.7Se_0.3-0.3 wt % Ag₂Te composite sample, leading to a projected conversion efficiency η = 8.3% (300-500 K). The present results demonstrate that incorporation of nanophase Ag₂Te is an effective approach to boosting the thermoelectric performance of BTS.

Fine-Tuning Bi2Te3-Copper Selenide Alloys Enables an Efficient n-Type Thermoelectric Conversion

Bismuth tellurides is one of the most promising thermoelectric (TE) material candidates in low-temperature application circumstances, but the n-type thermoelectric property is relatively low compared to the p-type counterpart and still needs to be improved. Herein, we incorporated different copper selenides (CuSe, Cu₃Se₂ and Cu_2-xSe) into a Bi₂Te₃ matrix to create the alloy by grinding and successive sintering to enable higher thermoelectric performance. The results demonstrated that all alloys achieved n-type TE characteristics and Bi₂Te₃-CuSe exhibited the best Seebeck coefficient and power factor among them. Along with the low thermal conductivity, the maximum dimensionless TE figure of merit (ZT) value of 1.64 at 573 K was delivered for Bi₂Te₃-CuSe alloy, which is among the best reported results in the n-type Bi₂Te₃-based TE materials to the best of our knowledge. The improved TE properties should be related to the co-doping process of Se and Cu. Our investigation shows a new method to enhance the performance of n-type TE materials by appropriate co-doping or alloying.

Cu2Te Incorporation-Induced High Average Thermoelectric Performance in p-Type Bi2Te3 Alloys

p-Type (Bi, Sb)₂Te₃ alloys are attractive materials for near-room-temperature thermoelectric applications due to their high atomic masses and large spin-orbit interactions. However, their narrow band gaps originating from spin-orbit interactions lead to bipolar excitation, thereby limiting average thermoelectrics within a local temperature region (300-400 K). Here, we introduce Cu₂Te into the Bi_0.3Sb_1.7Te₃ (BST) lattice to implement high thermoelectrics over a wide temperature range. The carrier concentration is synergistically modulated via Cu substitution and the evolution of intrinsic point defects (antisites and vacancies). Furthermore, the chain effect caused by Cu₂Te incorporation in BST is reflected in the improvement of the weighted mobility μ_W, thereby enhancing the power factor in the whole temperature range. Extrinsic and intrinsic defects due to the incorporation of Cu₂Te lead to a significant reduction in the lattice thermal conductivity κ_L, which is further demonstrated by Raman spectroscopy. Combining κ_L and μ_W, the quantity factor B increases from 0.5 to 1 with increasing Cu₂Te content due to not only the reduction of κ_L but also a significant improvement in electrical properties. Eventually, a peak figure of merit (zT) of ∼1.15 at 423 K is achieved in BST-Cu₂Te samples, and an average figure of merit (zT_ave) of ∼1.12 (350-500 K) surpasses other excellent p-type Bi₂Te₃-based thermoelectrics. Such a synergistic effect can facilitate near-room-temperature thermoelectric applications of Bi₂Te₃-based alloys and provide chances for the technology space in thermoelectrics.

Heat-fueled enzymatic cascade for selective oxyfunctionalization of hydrocarbons

Heat is a fundamental feedstock, where more than 80% of global energy comes from fossil-based heating process. However, it is mostly wasted due to a lack of proper techniques of utilizing the low-quality waste heat (<100 °C). Here we report thermoelectrobiocatalytic chemical conversion systems for heat-fueled, enzyme-catalyzed oxyfunctionalization reactions. Thermoelectric bismuth telluride (Bi₂Te₃) directly converts low-temperature waste heat into chemical energy in the form of H₂O₂ near room temperature. The streamlined reaction scheme (e.g., water, heat, enzyme, and thermoelectric material) promotes enantio- and chemo-selective hydroxylation and epoxidation of representative substrates (e.g., ethylbenzene, propylbenzene, tetralin, cyclohexane, cis-β-methylstyrene), achieving a maximum total turnover number of rAaeUPO (TTN_rAaeUPO) over 32000. Direct conversion of vehicle exhaust heat into the enantiopure enzymatic product with a rate of 231.4 μM h⁻¹ during urban driving envisions the practical feasibility of thermoelectrobiocatalysis.

Thermoelectric materials enable us to convert heat into electricity, but their application has been limited to high-temperature heat sources. Here, the authors show the direct conversion of low-grade waste heat into chemical energy via combining thermoelectric materials with biocatalysts below 100 °C.

Development of a High Perfomance Gas Thermoelectric Generator (TEG) with Possibible Use of Waste Heat

A huge concern regarding global warming, as well as the depletion of natural fuel resources, has led to a wide search for alternative energy sources. Due to their high reliability and long operation time, thermoelectric generators are of significant interest for waste heat recovery and power generation. The main disadvantage of TEGs is the low efficiency of thermoelectric commercial modules. In this work, a unique design for a multilayer TE unicouple is suggested for an operating temperature range of 50–600 °C. Two types of thermoelectric materials were selected: «low temperature» n-and p-type TE materials (for the operating temperature range of 50–300 °C) based on Bi2Te3 compounds and «middle temperature» (for the operating temperature range of 300–600 °C) n- and p-type TE materials based on the PbTe compound. The hot extrusion technology was applied to fabricate n- and p-type low-temperature TE materials. A unique design of multilayer TEG was experienced to achieve an efficiency of up to 15%. This allows for the possibility of extracting this amount of electrical power from the heat generated for domestic and water heating.

Weighted Mobility Ratio Engineering for High-Performance Bi-Te-Based Thermoelectric Materials via Suppression of Minority Carrier Transport

Thermoelectrics, which can generate electricity from a temperature difference, or vice versa, is a key technology for solid-state cooling and energy harvesting; however, its applications are constrained owing to low efficiency. Since the conversion efficiency of thermoelectric devices is directly obtained via a figure of merit of materials, zT, which is related to the electronic and thermal transport characteristics, the aim here is to elucidate physical parameters that should be considered to understand transport phenomena in semiconducting materials. It is found that the weighted mobility ratio of the majority and minority carrier bands is an important parameter that determines zT. For nanograined Bi-Sb-Te alloy, the unremarked role of this parameter on temperature-dependent electronic transport properties is demonstrated. This analysis shows that the control of the weighted mobility ratio is a promising way to enhance zT of narrow bandgap thermoelectric materials.

When band convergence is not beneficial for thermoelectrics

Band convergence is considered a clear benefit to thermoelectric performance because it increases the charge carrier concentration for a given Fermi level, which typically enhances charge conductivity while preserving the Seebeck coefficient. However, this advantage hinges on the assumption that interband scattering of carriers is weak or insignificant. With first-principles treatment of electron-phonon scattering in the CaMg2Sb2-CaZn2Sb2 Zintl system and full Heusler Sr2SbAu, we demonstrate that the benefit of band convergence can be intrinsically negated by interband scattering depending on the manner in which bands converge. In the Zintl alloy, band convergence does not improve weighted mobility or the density-of-states effective mass. We trace the underlying reason to the fact that the bands converge at a one k-point, which induces strong interband scattering of both the deformation-potential and the polar-optical kinds. The case contrasts with band convergence at distant k-points (as in the full Heusler), which better preserves the single-band scattering behavior thereby successfully leading to improved performance. Therefore, we suggest that band convergence as thermoelectric design principle is best suited to cases in which it occurs at distant k-points.

Discovery of multivalley Fermi surface responsible for the high thermoelectric performance in Yb14MnSb11 and Yb14MgSb11

The Zintl phases, Yb₁₄ MSb₁₁ (M = Mn, Mg, Al, Zn), are now some of the highest thermoelectric efficiency p-type materials with stability above 873 K. Yb₁₄MnSb₁₁ gained prominence as the first p-type thermoelectric material to double the efficiency of SiGe alloy, the heritage material in radioisotope thermoelectric generators used to power NASA's deep space exploration. This study investigates the solid solution of Yb₁₄Mg_1-x Al _x Sb₁₁ (0 ≤ x ≤ 1), which enables a full mapping of the metal-to-semiconductor transition. Using a combined theoretical and experimental approach, we show that a second, high valley degeneracy (N _v = 8) band is responsible for the groundbreaking performance of Yb₁₄ MSb₁₁ This multiband understanding of the properties provides insight into other thermoelectric systems (La_3-x Te₄, SnTe, Ag₉AlSe₆, and Eu₉CdSb₉), and the model predicts that an increase in carrier concentration can lead to zT > 1.5 in Yb₁₄ MSb₁₁ systems.

Achieving High Thermoelectric Performance in Rare-Earth Element-Free CaMg2Bi2 with High Carrier Mobility and Ultralow Lattice Thermal Conductivity

CaMg₂Bi₂-based compounds, a kind of the representative compounds of Zintl phases, have uniquely inherent layered structure and hence are considered to be potential thermoelectric materials. Generally, alloying is a traditional and effective way to reduce the lattice thermal conductivity through the mass and strain field fluctuation between host and guest atoms. The cation sites have very few contributions to the band structure around the fermi level; thus, cation substitution may have negligible influence on the electric transport properties. What is more, widespread application of thermoelectric materials not only desires high ZT value but also calls for low-cost and environmentally benign constituent elements. Here, Ba substitution on cation site achieves a sharp reduction in lattice thermal conductivity through enhanced point defects scattering without the obvious sacrifice of high carrier mobility, and thus improves thermoelectric properties. Then, by combining further enhanced phonon scattering caused by isoelectronic substitution of Zn on the Mg site, an extraordinarily low lattice thermal conductivity of 0.51 W m⁻¹ K⁻¹ at 873 K is achieved in (Ca_0.75Ba_0.25)_0.995Na_0.005Mg_1.95Zn_0.05Bi_1.98 alloy, approaching the amorphous limit. Such maintenance of high mobility and realization of ultralow lattice thermal conductivity synergistically result in broadly improvement of the quality factor β. Finally, a maximum ZT of 1.25 at 873 K and the corresponding ZT_ave up to 0.85 from 300 K to 873 K have been obtained for the same composition, meanwhile possessing temperature independent compatibility factor. To our knowledge, the current ZT_ave exceeds all the reported values in AMg₂Bi₂-based compounds so far. Furthermore, the low-cost and environment-friendly characteristic plus excellent thermoelectric performance also make the present Zintl phase CaMg₂Bi₂ more competitive in practical application.