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Ran J, Wang X, Liu Y, Yin S, Li S, Zhang L. Microreactor-based micro/nanomaterials: fabrication, advances, and outlook. MATERIALS HORIZONS 2023. [PMID: 37139613 DOI: 10.1039/d3mh00329a] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
Micro/nanomaterials are widely used in optoelectronics, environmental materials, bioimaging, agricultural industries, and drug delivery owing to their marvelous features, such as quantum tunneling, size, surface and boundary, and Coulomb blockade effects. Recently, microreactor technology has opened up broad prospects for green and sustainable chemical synthesis as a powerful tool for process intensification and microscale manipulation. This review focuses on recent progress in the microreactor synthesis of micro/nanomaterials. First, the fabrication and design principles of existing microreactors for producing micro/nanomaterials are summarized and classified. Afterwards, typical examples are shown to demonstrate the fabrication of micro/nanomaterials, including metal nanoparticles, inorganic nonmetallic nanoparticles, organic nanoparticles, Janus particles, and MOFs. Finally, the future research prospects and key issues of microreactor-based micro/nanomaterials are discussed. In short, microreactors provide new ideas and methods for the synthesis of micro/nanomaterials, which have huge potential and inestimable possibilities in large-scale production and scientific research.
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Affiliation(s)
- Jianfeng Ran
- Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, Yunnan 650093, China.
- State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming, Yunnan 650093, China
- Key Laboratory of Unconventional Metallurgy, Kunming University of Science and Technology, Kunming 650093, Yunnan, China
| | - Xuxu Wang
- Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, Yunnan 650093, China.
- State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming, Yunnan 650093, China
- Key Laboratory of Unconventional Metallurgy, Kunming University of Science and Technology, Kunming 650093, Yunnan, China
| | - Yuanhong Liu
- Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, Yunnan 650093, China.
- State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming, Yunnan 650093, China
- Key Laboratory of Unconventional Metallurgy, Kunming University of Science and Technology, Kunming 650093, Yunnan, China
| | - Shaohua Yin
- Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, Yunnan 650093, China.
- State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming, Yunnan 650093, China
- Key Laboratory of Unconventional Metallurgy, Kunming University of Science and Technology, Kunming 650093, Yunnan, China
| | - Shiwei Li
- Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, Yunnan 650093, China.
- State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming, Yunnan 650093, China
- Key Laboratory of Unconventional Metallurgy, Kunming University of Science and Technology, Kunming 650093, Yunnan, China
| | - Libo Zhang
- Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, Yunnan 650093, China.
- State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming, Yunnan 650093, China
- Key Laboratory of Unconventional Metallurgy, Kunming University of Science and Technology, Kunming 650093, Yunnan, China
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Tseng LT, Karadan P, Kazazis D, Constantinou PC, Stock TJ, Curson NJ, Schofield SR, Muntwiler M, Aeppli G, Ekinci Y. Resistless EUV lithography: Photon-induced oxide patterning on silicon. SCIENCE ADVANCES 2023; 9:eadf5997. [PMID: 37075116 PMCID: PMC10115406 DOI: 10.1126/sciadv.adf5997] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated silicon (100) surface in the absence of a photoresist. EUV lithography is the leading lithography technique in semiconductor manufacturing due to its high resolution and throughput, but future progress in resolution can be hampered because of the inherent limitations of the resists. We show that EUV photons can induce surface reactions on a partially hydrogen-terminated silicon surface and assist the growth of an oxide layer, which serves as an etch mask. This mechanism is different from the hydrogen desorption in scanning tunneling microscopy-based lithography. We achieve silicon dioxide/silicon gratings with 75-nanometer half-pitch and 31-nanometer height, demonstrating the efficacy of the method and the feasibility of patterning with EUV lithography without the use of a photoresist. Further development of the resistless EUV lithography method can be a viable approach to nanometer-scale lithography by overcoming the inherent resolution and roughness limitations of photoresist materials.
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Affiliation(s)
- Li-Ting Tseng
- Paul Scherrer Institute, 5232 Villigen PSI, Switzerland
| | | | - Dimitrios Kazazis
- Paul Scherrer Institute, 5232 Villigen PSI, Switzerland
- Corresponding author.
| | | | - Taylor J. Z. Stock
- London Centre for Nanotechnology, University College London, London WC1H 0AH, UK
- Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK
| | - Neil J. Curson
- London Centre for Nanotechnology, University College London, London WC1H 0AH, UK
- Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK
| | - Steven R. Schofield
- London Centre for Nanotechnology, University College London, London WC1H 0AH, UK
- Department of Physics and Astronomy, University College London, London WC1E 6BT, UK
| | | | - Gabriel Aeppli
- Paul Scherrer Institute, 5232 Villigen PSI, Switzerland
- Laboratory for Solid State Physics and Quantum Center, ETH-Zürich, 8093 Zürich, Switzerland
- Institut de Physique, EPFL, 1015 Lausanne, Switzerland
| | - Yasin Ekinci
- Paul Scherrer Institute, 5232 Villigen PSI, Switzerland
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Yusoh SN, Yaacob KA. Study on the Physical Properties of a SiNW Biosensor to the Sensitivity of DNA Detection. MATERIALS 2021; 14:ma14195716. [PMID: 34640114 PMCID: PMC8510051 DOI: 10.3390/ma14195716] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/19/2021] [Revised: 09/20/2021] [Accepted: 09/27/2021] [Indexed: 01/15/2023]
Abstract
SiNW (silicon nanowire) arrays consisting of 5- and 10-wires were fabricated by using an atomic force microscope—the local anodic oxidation (AFM-LAO) technique followed by wet chemical etching. Tetramethylammonium hydroxide (TMAH) and isopropyl alcohol (IPA) at various concentrations were used to etch SiNWs. The SiNWs produced were differed in dimension and surface roughness. The SiNWs were functionalized and used for the detection of deoxyribonucleic acid (DNA) dengue (DEN-1). SiNW-based biosensors show sensitive detection of dengue DNA due to certain factors. The physical properties of SiNWs, such as the number of wires, the dimensions of wires, and surface roughness, were found to influence the sensitivity of the biosensor device. The SiNW biosensor device with 10 wires, a larger surface-to-volume ratio, and a rough surface is the most sensitive device, with a 1.93 fM limit of detection (LOD).
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