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Kapush O, Dzhagan V, Mazur N, Havryliuk Y, Karnaukhov A, Redko R, Budzulyak S, Boruk S, Babichuk I, Danylenko M, Yukhymchuk V. Raman study of colloidal Cu 2ZnSnS 4 nanocrystals obtained by "green" synthesis modified by seed nanocrystals or extra cations in the solution. Heliyon 2023; 9:e16037. [PMID: 37206011 PMCID: PMC10189388 DOI: 10.1016/j.heliyon.2023.e16037] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/17/2023] [Revised: 02/23/2023] [Accepted: 05/03/2023] [Indexed: 05/21/2023] Open
Abstract
The method of affordable colloidal synthesis of nanocrystalline Cu2ZnSnS4 (CZTS) is developed, which is suitable for obtaining bare CZTS nanocrystals (NCs), cation substituted CZTS NCs, and CZTS-based hetero-NCs. For the hetero-NCs, the synthesized in advance NCs of another material are introduced into the reaction solution so that the formation of CZTS takes place preferably on these "seed" NCs. Raman spectroscopy is used as the primary method of structural characterization of the NCs in this work because it is very sensitive to the CZTS structure and allows to probe NCs both in solutions and films. Raman data are corroborated by optical absorption measurements and transmission electron microscopy on selected samples. The CdTe and Ag NCs are found to be good seed NCs, resulting in a comparable or even better quality of the CZTS compound compared to bare CZTS NCs. For Au NCs, on the contrary, no hetero-NCs could be obtained under the given condition. Partial substitution of Zn for Ba during the synthesis of bare CZTS NCs results in a superior structural quality of NCs, while the introduction of Ag for partial substitution of Cu deteriorates the structural quality of the NCs.
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Affiliation(s)
- O.A. Kapush
- V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, 45 Nauky Av., 03028, Kyiv, Ukraine
| | - V.M. Dzhagan
- V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, 45 Nauky Av., 03028, Kyiv, Ukraine
- Physics Department, Taras Shevchenko National University of Kyiv, 60 Volodymyrs'ka Str., 01601, Kyiv, Ukraine
- Corresponding author. V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, 45 Nauky Av., 03028, Kyiv, Ukraine.;
| | - N.V. Mazur
- V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, 45 Nauky Av., 03028, Kyiv, Ukraine
| | - Ye.O. Havryliuk
- V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, 45 Nauky Av., 03028, Kyiv, Ukraine
- Semiconductor Physics, Chemnitz University of Technology, D-09107, Chemnitz, Germany
- Center for Materials, Architectures, and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, D-09107, Chemnitz, Germany
| | - A. Karnaukhov
- V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, 45 Nauky Av., 03028, Kyiv, Ukraine
| | - R.A. Redko
- V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, 45 Nauky Av., 03028, Kyiv, Ukraine
- State University of Telecommunications, 7 Solomenska Str., 03680, Kyiv, Ukraine
| | - S.I. Budzulyak
- V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, 45 Nauky Av., 03028, Kyiv, Ukraine
| | - S. Boruk
- Yurii Fedkovich Chernivtsi National University, 25, Lesia Ukrainka Str., 58000, Chernivtsi, Ukraine
| | - I.S. Babichuk
- V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, 45 Nauky Av., 03028, Kyiv, Ukraine
- Faculty of Intelligent Manufacturing, Wuyi University, Jiangmen, 529020, PR China
| | - M.I. Danylenko
- Frantsevich Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, Kyiv, Ukraine
| | - V.O. Yukhymchuk
- V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, 45 Nauky Av., 03028, Kyiv, Ukraine
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Tchurikov N, Kretova O, Fedoseeva D, Chechetkin V, Gorbacheva M, Karnaukhov A, Kravatskaya G, Kravatsky Y. Mapping of genomic double-strand breaks by ligation of biotinylated oligonucleotides to forum domains: Analysis of the data obtained for human rDNA units. Genom Data 2015; 3:15-8. [PMID: 26484142 PMCID: PMC4535614 DOI: 10.1016/j.gdata.2014.10.024] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/30/2014] [Accepted: 10/30/2014] [Indexed: 11/30/2022]
Abstract
DNA double-strand breaks (DSBs) are associated with different physiological and pathological processes in different organisms. To understand the role of DSBs in multiple cellular mechanisms, a robust method for genome-wide mapping of chromosomal breaks at one-nucleotide resolution is required. Many years ago, we detected large DNA fragments migrating from DNA-agarose plugs in pulsed-field gels, which we named 'forum domains' [1,2]. Recently, we developed a method for genome-wide mapping of DSBs that produces these 50-150 kb DNA domains using microarrays or 454 sequencing (Tchurikov et al., 2011; 2013). Now we have used Illumina sequencing to map DSBs in repetitive rDNA units in human HEK293T cells. Here we describe in detail the experimental design and bioinformatics analysis of the data deposited in the Gene Expression Omnibus with accession number GSE49302 and associated with the study published in the Journal of Molecular Cell Biology (Tchurikov et al., 2014).
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Affiliation(s)
- N.A. Tchurikov
- Engelhardt Institute of Molecular Biology, Moscow, Russia
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