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Lytvyn PM, Kuchuk AV, Mazur YI, Li C, Ware ME, Wang ZM, Kladko VP, Belyaev AE, Salamo GJ. Polarization Effects in Graded AlGaN Nanolayers Revealed by Current-Sensing and Kelvin Probe Microscopy. ACS Appl Mater Interfaces 2018; 10:6755-6763. [PMID: 29381323 DOI: 10.1021/acsami.7b19160] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We experimentally demonstrate that the conductivity of graded AlxGa1-xN increases as a function of the magnitude of the Al concentration gradient (%Al/nm) due to polarization doping effects, without the use of impurity dopants. Using three up/down-graded AlxGa1-xN nanolayers with Al gradients ranging from ∼0.16 to ∼0.28%Al/nm combined in one structure, the effects of polarization engineering for localized electric fields and current transport were investigated. Cross-sectional Kelvin probe force microscopy and conductive atomic force microscopy were used to directly probe the electrical properties of the films with spatial resolution along the thickness of the growth. The experimental profiles of the built-in electric fields and the spreading current found in the graded layers are shown to be consistent with simulations of the field distribution as well as of the electron and hole densities. Finally, it was directly observed that for gradients less than 0.28%Al/nm the native n-type donors still limit polarization-induced hole doping, making p-type conductivity still a challenge due to background impurities and defects.
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Affiliation(s)
- Petro M Lytvyn
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China , Chengdu 610054, P. R. China
- Institute for Nanoscience & Engineering, University of Arkansas , W. Dickson 731, Fayetteville, Arkansas 72701, United States
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine , Pr. Nauky 41, 03680 Kyiv, Ukraine
| | - Andrian V Kuchuk
- Institute for Nanoscience & Engineering, University of Arkansas , W. Dickson 731, Fayetteville, Arkansas 72701, United States
| | - Yuriy I Mazur
- Institute for Nanoscience & Engineering, University of Arkansas , W. Dickson 731, Fayetteville, Arkansas 72701, United States
| | - Chen Li
- Institute for Nanoscience & Engineering, University of Arkansas , W. Dickson 731, Fayetteville, Arkansas 72701, United States
| | - Morgan E Ware
- Institute for Nanoscience & Engineering, University of Arkansas , W. Dickson 731, Fayetteville, Arkansas 72701, United States
| | - Zhiming M Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China , Chengdu 610054, P. R. China
| | - Vasyl P Kladko
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine , Pr. Nauky 41, 03680 Kyiv, Ukraine
| | - Alexander E Belyaev
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine , Pr. Nauky 41, 03680 Kyiv, Ukraine
| | - Gregory J Salamo
- Institute for Nanoscience & Engineering, University of Arkansas , W. Dickson 731, Fayetteville, Arkansas 72701, United States
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Tsykaniuk BI, Nikolenko AS, Strelchuk VV, Naseka VM, Mazur YI, Ware ME, DeCuir EA, Sadovyi B, Weyher JL, Jakiela R, Salamo GJ, Belyaev AE. Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire. Nanoscale Res Lett 2017; 12:397. [PMID: 28599511 PMCID: PMC5465006 DOI: 10.1186/s11671-017-2171-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/30/2016] [Accepted: 05/30/2017] [Indexed: 06/07/2023]
Abstract
Infrared (IR) reflectance spectroscopy is applied to study Si-doped multilayer n+/n0/n+-GaN structure grown on GaN buffer with GaN-template/sapphire substrate. Analysis of the investigated structure by photo-etching, SEM, and SIMS methods showed the existence of the additional layer with the drastic difference in Si and O doping levels and located between the epitaxial GaN buffer and template. Simulation of the experimental reflectivity spectra was performed in a wide frequency range. It is shown that the modeling of IR reflectance spectrum using 2 × 2 transfer matrix method and including into analysis the additional layer make it possible to obtain the best fitting of the experimental spectrum, which follows in the evaluation of GaN layer thicknesses which are in good agreement with the SEM and SIMS data. Spectral dependence of plasmon-LO-phonon coupled modes for each GaN layer is obtained from the spectral dependence of dielectric of Si doping impurity, which is attributed to compensation effects by the acceptor states.
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Affiliation(s)
- Bogdan I Tsykaniuk
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, Kiev, 03680, Ukraine.
| | - Andrii S Nikolenko
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, Kiev, 03680, Ukraine
| | - Viktor V Strelchuk
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, Kiev, 03680, Ukraine
| | - Viktor M Naseka
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, Kiev, 03680, Ukraine
| | - Yuriy I Mazur
- Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Fayetteville, AR, 72701, USA
| | - Morgan E Ware
- Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Fayetteville, AR, 72701, USA
| | - Eric A DeCuir
- Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Fayetteville, AR, 72701, USA
| | - Bogdan Sadovyi
- Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska str. 29/37, 01-142, Warsaw, Poland
| | - Jan L Weyher
- Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska str. 29/37, 01-142, Warsaw, Poland
| | - Rafal Jakiela
- Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, PL-02-668, Warsaw, Poland
| | - Gregory J Salamo
- Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Fayetteville, AR, 72701, USA
| | - Alexander E Belyaev
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, Kiev, 03680, Ukraine
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Tsykaniuk BI, Nikolenko AS, Strelchuk VV, Naseka VM, Mazur YI, Ware ME, DeCuir EA, Sadovyi B, Weyher JL, Jakiela R, Salamo GJ, Belyaev AE. Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire. Nanoscale Res Lett 2017; 12:502. [PMID: 28828578 PMCID: PMC5565748 DOI: 10.1186/s11671-017-2227-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/11/2017] [Accepted: 07/11/2017] [Indexed: 06/07/2023]
Affiliation(s)
- Bogdan I Tsykaniuk
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, Kiev, 03680, Ukraine.
| | - Andrii S Nikolenko
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, Kiev, 03680, Ukraine
| | - Viktor V Strelchuk
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, Kiev, 03680, Ukraine
| | - Viktor M Naseka
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, Kiev, 03680, Ukraine
| | - Yuriy I Mazur
- Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Fayetteville, AR, 72701, USA
| | - Morgan E Ware
- Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Fayetteville, AR, 72701, USA
| | - Eric A DeCuir
- Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Fayetteville, AR, 72701, USA
| | - Bogdan Sadovyi
- Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska str. 29/37, 01-142, Warsaw, Poland
| | - Jan L Weyher
- Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska str. 29/37, 01-142, Warsaw, Poland
| | - Rafal Jakiela
- Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, PL-02-668, Warsaw, Poland
| | - Gregory J Salamo
- Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Fayetteville, AR, 72701, USA
| | - Alexander E Belyaev
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, Kiev, 03680, Ukraine
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Sydoruk VA, Zadorozhnyi I, Hardtdegen H, Lüth H, Petrychuk MV, Naumov AV, Korotyeyev VV, Kochelap VA, Belyaev AE, Vitusevich SA. Electronic edge-state and space-charge phenomena in long GaN nanowires and nanoribbons. Nanotechnology 2017; 28:135204. [PMID: 28151731 DOI: 10.1088/1361-6528/aa5de3] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We studied space-charge-distribution phenomena in planar GaN nanowires and nanoribbons (NRs). The results obtained at low voltages demonstrate that the electron concentration changes not only at the edges of the NR, but also in the middle part of the NR. The effect is stronger with decreasing NR width. Moreover, the spatial separation of the positive and negative charges results in electric-field patterns outside the NR. This remarkable feature of electrostatic fields outside the NR may be even stronger in 2D material structures. For larger voltages the space-charge-limited current (SCLC) effect determines the main mechanism of transport in the NR samples. The onset of the SCLC effect clearly correlates with the NR width. The results are confirmed by noise spectroscopy studies of the NR transport. We found that the noise increases with decreasing NR width and the shape of the spectra changes with voltage increase with a tendency toward slope (3/2), reflecting diffusion processes due to the SCLC effect. At higher voltages noise decreases as a result of changes in the scattering mechanisms. We suggest that the features of the electric current and noise found in the NRs are of general character and will have an impact on the development of NR-based devices.
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Affiliation(s)
- V A Sydoruk
- Peter Grünberg Institute (PGI-8/IBG-2, PGI-9), Forschungszentrum Jülich, Jülich 52425, Germany
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Stanchu HV, Kuchuk AV, Kladko VP, Ware ME, Mazur YI, Zytkiewicz ZR, Belyaev AE, Salamo GJ. X-ray Reciprocal Space Mapping of Graded Al x Ga1 - x N Films and Nanowires. Nanoscale Res Lett 2016; 11:81. [PMID: 26860714 PMCID: PMC4747973 DOI: 10.1186/s11671-016-1299-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/04/2015] [Accepted: 02/02/2016] [Indexed: 06/05/2023]
Abstract
The depth distribution of strain and composition in graded Al x Ga1 - x N films and nanowires (NWs) are studied theoretically using the kinematical theory of X-ray diffraction. By calculating [Formula: see text] reciprocal space maps (RSMs), we demonstrate significant differences in the intensity distributions from graded Al x Ga1 - x N films and NWs. We attribute these differences to relaxation of the substrate-induced strain on the NWs free side walls. Finally, we demonstrate that the developed X-ray reciprocal space map model allows for reliable depth profiles of strain and Al composition determination in both Al x Ga1 - x N films and NWs.
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Affiliation(s)
- Hryhorii V Stanchu
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, 03680, Kyiv, Ukraine.
| | - Andrian V Kuchuk
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, 03680, Kyiv, Ukraine.
- Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Fayetteville, AR, 72701, USA.
| | - Vasyl P Kladko
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, 03680, Kyiv, Ukraine.
| | - Morgan E Ware
- Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Fayetteville, AR, 72701, USA.
| | - Yuriy I Mazur
- Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Fayetteville, AR, 72701, USA.
| | - Zbigniew R Zytkiewicz
- Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668, Warsaw, Poland.
| | - Alexander E Belyaev
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, 03680, Kyiv, Ukraine.
| | - Gregory J Salamo
- Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Fayetteville, AR, 72701, USA.
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Kuchuk AV, Kryvyi S, Lytvyn PM, Li S, Kladko VP, Ware ME, Mazur YI, Safryuk NV, Stanchu HV, Belyaev AE, Salamo GJ. The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study. Nanoscale Res Lett 2016; 11:252. [PMID: 27184965 PMCID: PMC4870488 DOI: 10.1186/s11671-016-1478-6] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/29/2015] [Accepted: 05/10/2016] [Indexed: 05/28/2023]
Abstract
Superlattices (SLs) consisting of symmetric layers of GaN and AlN have been investigated. Detailed X-ray diffraction and reflectivity measurements demonstrate that the relaxation of built-up strain in the films generally increases with an increasing number of repetitions; however, an apparent relaxation for subcritical thickness SLs is explained through the accumulation of Nagai tilt at each interface of the SL. Additional atomic force microscopy measurements reveal surface pit densities which appear to correlate with the amount of residual strain in the films along with the appearance of cracks for SLs which have exceeded the critical thickness for plastic relaxation. These results indicate a total SL thickness beyond which growth may be limited for the formation of high-quality coherent crystal structures; however, they may indicate a growth window for the reduction of threading dislocations by controlled relaxation of the epilayers.
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Affiliation(s)
- Andrian V Kuchuk
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, 03680, Kiev, Ukraine.
- Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Fayetteville, AR, 72701, USA.
| | - Serhii Kryvyi
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, 03680, Kiev, Ukraine
| | - Petro M Lytvyn
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, 03680, Kiev, Ukraine
| | - Shibin Li
- Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Fayetteville, AR, 72701, USA
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, 610054, Chengdu, China
| | - Vasyl P Kladko
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, 03680, Kiev, Ukraine
| | - Morgan E Ware
- Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Fayetteville, AR, 72701, USA
| | - Yuriy I Mazur
- Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Fayetteville, AR, 72701, USA
| | - Nadiia V Safryuk
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, 03680, Kiev, Ukraine
| | - Hryhorii V Stanchu
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, 03680, Kiev, Ukraine
| | - Alexander E Belyaev
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, 03680, Kiev, Ukraine
| | - Gregory J Salamo
- Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Fayetteville, AR, 72701, USA
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Gryshkov O, Klyui NI, Temchenko VP, Kyselov VS, Chatterjee A, Belyaev AE, Lauterboeck L, Iarmolenko D, Glasmacher B. Porous biomorphic silicon carbide ceramics coated with hydroxyapatite as prospective materials for bone implants. Mater Sci Eng C Mater Biol Appl 2016; 68:143-152. [PMID: 27524006 DOI: 10.1016/j.msec.2016.05.113] [Citation(s) in RCA: 39] [Impact Index Per Article: 4.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2016] [Revised: 04/18/2016] [Accepted: 05/24/2016] [Indexed: 02/03/2023]
Abstract
Porous and cytocompatible silicon carbide (SiC) ceramics derived from wood precursors and coated with bioactive hydroxyapatite (HA) and HA-zirconium dioxide (HA/ZrO2) composite are materials with promising application in engineering of bone implants due to their excellent mechanical and structural properties. Biomorphic SiC ceramics have been synthesized from wood (Hornbeam, Sapele, Tilia and Pear) using a forced impregnation method. The SiC ceramics have been coated with bioactive HA and HA/ZrO2 using effective gas detonation deposition approach (GDD). The surface morphology and cytotoxicity of SiC ceramics as well as phase composition and crystallinity of deposited coatings were analyzed. It has been shown that the porosity and pore size of SiC ceramics depend on initial wood source. The XRD and FTIR studies revealed the preservation of crystal structure and phase composition of in the HA coating, while addition of ZrO2 to the initial HA powder resulted in significant decomposition of the final HA/ZrO2 coating and formation of other calcium phosphate phases. In turn, NIH 3T3 cells cultured in medium exposed to coated and uncoated SiC ceramics showed high re-cultivation efficiency as well as metabolic activity. The recultivation efficiency of cells was the highest for HA-coated ceramics, whereas HA/ZrO2 coating improved the recultivation efficiency of cells as compared to uncoated SiC ceramics. The GDD method allowed generating homogeneous HA coatings with no change in calcium to phosphorus ratio. In summary, porous and cytocompatible bio-SiC ceramics with bioactive coatings show a great promise in construction of light, robust, inexpensive and patient-specific bone implants for clinical application.
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Affiliation(s)
- Oleksandr Gryshkov
- Institute for Multiphase Processes, Leibniz Universität Hannover, 30167 Hannover, Germany.
| | - Nickolai I Klyui
- College of Physics, Jilin University, 130012 Changchun, PR China; V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, 03028 Kyiv, Ukraine.
| | - Volodymyr P Temchenko
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, 03028 Kyiv, Ukraine.
| | - Vitalii S Kyselov
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, 03028 Kyiv, Ukraine.
| | - Anamika Chatterjee
- Institute for Multiphase Processes, Leibniz Universität Hannover, 30167 Hannover, Germany.
| | - Alexander E Belyaev
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, 03028 Kyiv, Ukraine.
| | - Lothar Lauterboeck
- Institute for Multiphase Processes, Leibniz Universität Hannover, 30167 Hannover, Germany.
| | - Dmytro Iarmolenko
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, 03028 Kyiv, Ukraine.
| | - Birgit Glasmacher
- Institute for Multiphase Processes, Leibniz Universität Hannover, 30167 Hannover, Germany.
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Kuchuk AV, Lytvyn PM, Li C, Stanchu HV, Mazur YI, Ware ME, Benamara M, Ratajczak R, Dorogan V, Kladko VP, Belyaev AE, Salamo GG. Nanoscale Electrostructural Characterization of Compositionally Graded Al(x)Ga(1-x)N Heterostructures on GaN/Sapphire (0001) Substrate. ACS Appl Mater Interfaces 2015; 7:23320-23327. [PMID: 26431166 DOI: 10.1021/acsami.5b07924] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We report on AlxGa1-xN heterostructures resulting from the coherent growth of a positive then a negative gradient of the Al concentration on a [0001]-oriented GaN substrate. These polarization-doped p-n junction structures were characterized at the nanoscale by a combination of averaging as well as depth-resolved experimental techniques including: cross-sectional transmission electron microscopy, high-resolution X-ray diffraction, Rutherford backscattering spectrometry, and scanning probe microscopy. We observed that a small miscut in the substrate orientation along with the accumulated strain during growth led to a change in the mosaic structure of the AlxGa1-xN film, resulting in the formation of macrosteps on the surface. Moreover, we found a lateral modulation of charge carriers on the surface which were directly correlated with these steps. Finally, using nanoscale probes of the charge density in cross sections of the samples, we have directly measured, semiquantitatively, both n- and p-type polarization doping resulting from the gradient concentration of the AlxGa1-xN layers.
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Affiliation(s)
- Andrian V Kuchuk
- Institute for Nanoscience and Engineering, University of Arkansas , West Dickson 731, Fayetteville, Arkansas 72701, United States
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine , Pr. Nauky 41, 03680 Kyiv, Ukraine
| | - Petro M Lytvyn
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine , Pr. Nauky 41, 03680 Kyiv, Ukraine
| | - Chen Li
- Institute for Nanoscience and Engineering, University of Arkansas , West Dickson 731, Fayetteville, Arkansas 72701, United States
| | - Hryhorii V Stanchu
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine , Pr. Nauky 41, 03680 Kyiv, Ukraine
| | - Yuriy I Mazur
- Institute for Nanoscience and Engineering, University of Arkansas , West Dickson 731, Fayetteville, Arkansas 72701, United States
| | - Morgan E Ware
- Institute for Nanoscience and Engineering, University of Arkansas , West Dickson 731, Fayetteville, Arkansas 72701, United States
| | - Mourad Benamara
- Institute for Nanoscience and Engineering, University of Arkansas , West Dickson 731, Fayetteville, Arkansas 72701, United States
| | - Renata Ratajczak
- National Centre for Nuclear Research , ul. Andrzeja Sołtana 7, 05-400 Otwock, Poland
| | - Vitaliy Dorogan
- Institute for Nanoscience and Engineering, University of Arkansas , West Dickson 731, Fayetteville, Arkansas 72701, United States
| | - Vasyl P Kladko
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine , Pr. Nauky 41, 03680 Kyiv, Ukraine
| | - Alexander E Belyaev
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine , Pr. Nauky 41, 03680 Kyiv, Ukraine
| | - Gregory G Salamo
- Institute for Nanoscience and Engineering, University of Arkansas , West Dickson 731, Fayetteville, Arkansas 72701, United States
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Kuchuk AV, Kladko VP, Petrenko TL, Bryksa VP, Belyaev AE, Mazur YI, Ware ME, DeCuir EA, Salamo GJ. Mechanism of strain-influenced quantum well thickness reduction in GaN/AlN short-period superlattices. Nanotechnology 2014; 25:245602. [PMID: 24869600 DOI: 10.1088/0957-4484/25/24/245602] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
We report on the mechanism of strain-influenced quantum well (QW) thickness reduction in GaN/AlN short-period superlattices grown by plasma-assisted molecular beam epitaxy. Density functional theory was used to support the idea of a thermally activated exchange mechanism between Al adatoms and Ga surface atoms that is influenced by the strain state of the GaN QWs. These ab initio calculations support our experimentally observed reduction in QW thickness for different intrinsic strains.
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Affiliation(s)
- A V Kuchuk
- Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospect Nauky 45, Kyiv 03028, Ukraine. Institute for Nanoscience & Engineering, University of Arkansas, 731W. Dickson St., Fayetteville, AR 72701, USA
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Komirenko SM, Semenov YG, Belyaev AE, Ryabchenko YS. Composition-dependent energy spectrum of electrons in Hg1-xFexSe solid solution. Phys Rev B Condens Matter 1994; 50:14131-14135. [PMID: 9975631 DOI: 10.1103/physrevb.50.14131] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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