Final analysis and results of the Phase II SIMPLE dark matter search

We report the final results of the Phase II SIMPLE measurements, comprising two run stages of 15 superheated droplet detectors each, with the second stage including an improved neutron shielding. The analyses include a refined signal analysis, and revised nucleation efficiency based on a reanalysis of previously reported monochromatic neutron irradiations. The combined results yield a contour minimum of σp=5.7×10(-3)  pb at 35  GeV/c2 in the spin-dependent sector of weakly interacting massive particle (WIMP) proton interactions, the most restrictive to date for MW}≤60  GeV/c2 from a direct search experiment and overlapping, for the first time, with results previously obtained only indirectly. In the spin-independent sector, a minimum of 4.7×10(-6)  pb at 35  GeV/c2 is achieved, with the exclusion contour challenging a significant part of the light mass WIMP region of current interest.

First results of the Phase II SIMPLE dark matter search

We report results of a 14.1   kg d measurement with 15 superheated droplet detectors of total active mass 0.208 kg, comprising the first stage of a 30 kg d Phase II experiment. In combination with the results of the neutron-spin sensitive XENON10 experiment, these results yield a limit of |a(p)|<0.32 for M(W)=50 GeV/c² on the spin-dependent sector of weakly interacting massive particle-nucleus interactions with a 50% reduction in the previously allowed region of the phase space, formerly defined by XENON, KIMS, and PICASSO. In the spin-independent sector, a limit of 2.3×10⁻⁵ pb at M(W)=45 GeV/c² is obtained.

Investigation of a half-wave method for birefringence or thickness measurements of a thick, semitransparent, uniaxial, anisotropic substrate by use of spectroscopic ellipsometry

A half-wave method of measurement of wafer birefringence that is based on interference fringes recorded from a uniaxial wafer by use of a standard phase-modulated spectroscopic ellipsometer is investigated. The birefringence of uniaxial wafers is calculated from the extremal points in the recorded oscillating intensities. A formalism is developed to incorporate the change in birefringence with wavelength as a correction factor. The correction explains the overestimation of the birefringence from previous similar research on thick uniaxial sapphire substrates. The enhanced derivative of the birefringence that is due to polarization-dependent intraconduction band transitions is detected. Furthermore, for well-characterized wafers it is shown that this method can be used in wafer-thickness mapping of 4H-SiC and similar uniaxial high-bandgap semiconductors.