Correction: Transport mechanisms in a puckered graphene-on-lattice

Correction for 'Transport mechanisms in a puckered graphene-on-lattice' by T. Xu et al., Nanoscale, 2018, 10, 7519-7525.

Structural determination of bilayer graphene on SiC(0001) using synchrotron radiation photoelectron diffraction

In recent years there has been growing interest in the electronic properties of ‘few layer’ graphene films. Twisted layers, different stacking and register with the substrate result in remarkable unconventional couplings. These distinctive electronic behaviours have been attributed to structural differences, even if only a few structural determinations are available. Here we report the results of a structural study of bilayer graphene on the Si-terminated SiC(0001) surface, investigated using synchrotron radiation-based photoelectron diffraction and complemented by angle-resolved photoemission mapping of the electronic valence bands. Photoelectron diffraction angular distributions of the graphene C 1s component have been measured at different kinetic energies and compared with the results of multiple scattering simulations for model structures. The results confirm that bilayer graphene on SiC(0001) has a layer spacing of 3.48 Å and an AB (Bernal) stacking, with a distance between the C buffer layer and the first graphene layer of 3.24 Å. Our work generalises the use of a versatile and precise diffraction method capable to shed light on the structure of low-dimensional materials.

Transport mechanisms in a puckered graphene-on-lattice

Understanding the fundamental properties of graphene when its topography is patterned by the use of a compliant substrate is essential to improve the performances of graphene sensors. Here we suspend a graphene monolayer on SiO2 nanopillar arrays to form a puckered graphene-on-lattice and investigate the strain and electrical transport at the nanoscale. Despite a nonuniform strain in the graphene-on-lattice, the resistivity is governed by thermally activated transport and not the strain. We show that the high thermal activation energy results from a low charge carrier density and a periodic change of the chemical potential induced by the interaction of the graphene monolayer with the nanopillars, making the use of graphene-on-lattice attractive to further increase the electrical response of graphene sensors.

Large area growth of vertically aligned luminescent MoS2 nanosheets

Vertically aligned MoS₂ nanosheets (NSs) with exposed edges were successfully synthesized over a large area (∼2 cm²). The NSs were grown using an ambient pressure chemical vapor deposition technique via rapid sulfurization of sputter deposited thick molybdenum films. Extensive characterization of the grown MoS₂ NSs has been carried out using high resolution scanning and transmission electron microscopy (SEM & TEM). A special care was given to the TEM lamella preparation process by means of a focused ion beam to preserve the NS growth direction. The cross-section TEM measurements revealed the growth of densely packed, vertically aligned and straight MoS₂ NSs. Additional characterization techniques such as atomic force microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, and photoluminescence (PL) were used to evaluate the MoS₂ NSs. These studies revealed the high crystallinity and quality of the synthesized NSs. The MoS₂ NSs show visible light emission similar to mechanically exfoliated monolayer MoS₂ NSs. The striking PL signal comes from the exposed edges as shown by experimental and theoretical calculations. The vertical MoS₂ NSs also exhibit a hydrophobic character with a contact angle of 114°. The as-grown MoS₂ NSs would be highly useful in the development of catalysis, nano-optoelectronics, gas-sensing and bio-sensing device applications.

Understanding the growth mechanism of graphene on Ge/Si(001) surfaces

The practical difficulties to use graphene in microelectronics and optoelectronics is that the available methods to grow graphene are not easily integrated in the mainstream technologies. A growth method that could overcome at least some of these problems is chemical vapour deposition (CVD) of graphene directly on semiconducting (Si or Ge) substrates. Here we report on the comparison of the CVD and molecular beam epitaxy (MBE) growth of graphene on the technologically relevant Ge(001)/Si(001) substrate from ethene (C₂H₄) precursor and describe the physical properties of the films as well as we discuss the surface reaction and diffusion processes that may be responsible for the observed behavior. Using nano angle resolved photoemission (nanoARPES) complemented by transport studies and Raman spectroscopy as well as density functional theory (DFT) calculations, we report the direct observation of massless Dirac particles in monolayer graphene, providing a comprehensive mapping of their low-hole doped Dirac electron bands. The micrometric graphene flakes are oriented along two predominant directions rotated by 30° with respect to each other. The growth mode is attributed to the mechanism when small graphene “molecules” nucleate on the Ge(001) surface and it is found that hydrogen plays a significant role in this process.

Synthesis and characterization of MoS2 nanosheets

Here, we report on the synthesis of MoS2 nanosheets using a simple two-step additive-free growth technique. The as-synthesized nanosheets were characterized to determine their structure and composition, as well as their optical properties. The MoS2 nanosheets were analyzed by scanning electron microscopy, transmission electron microscopy (TEM), including high-resolution scanning TEM imaging and energy-dispersive x-ray spectroscopy, x-ray photoelectron spectroscopy (XPS), Raman spectroscopy and photoluminescence (PL). The as-produced MoS2 nanosheets are vertically aligned with curved edges and are densely populated. The TEM measurements confirmed that the nanosheets have the 2H-MoS2 crystal structure in agreement with the Raman results. The XPS results revealed the presence of high purity MoS2. Moreover, a prominent PL similar to mechanically exfoliated few and mono-layer MoS2 was observed for the as-grown nanosheets. For the thin (≤50 nm) nanosheets, the PL feature was observed at the same energy as that for a direct band-gap monolayer MoS2 (1.83 eV). Thus, the as-produced high-quality, large-area, MoS2 nanosheets could be potentially useful for various optoelectronic and catalysis applications.

Lifetimes of (214)Po and (212)Po measured with Counting Test Facility at Gran Sasso National Laboratory

The decays of (214)Po into (210)Pb and of (212)Po into (208)Pb tagged by the previous decays from (214)Bi and (212)Bi have been studied inserting quartz vials inside the Counting Test Facility (CTF) at the underground laboratory in Gran Sasso (LNGS). We find that the mean lifetime of (214)Po is (236.00 ± 0.42(stat) ± 0.15(syst)) μs and that of (212)Po is (425.1 ± 0.9(stat) ± 1.2(syst)) ns. Our results are compatible with previous measurements, have a much better signal to background ratio, and reduce the overall uncertainties.

First evidence of pep solar neutrinos by direct detection in Borexino

We observed, for the first time, solar neutrinos in the 1.0-1.5 MeV energy range. We determined the rate of pep solar neutrino interactions in Borexino to be 3.1±0.6{stat}±0.3{syst}  counts/(day·100  ton). Assuming the pep neutrino flux predicted by the standard solar model, we obtained a constraint on the CNO solar neutrino interaction rate of <7.9  counts/(day·100  ton) (95% C.L.). The absence of the solar neutrino signal is disfavored at 99.97% C.L., while the absence of the pep signal is disfavored at 98% C.L. The necessary sensitivity was achieved by adopting data analysis techniques for the rejection of cosmogenic {11}C, the dominant background in the 1-2 MeV region. Assuming the Mikheyev-Smirnov-Wolfenstein large mixing angle solution to solar neutrino oscillations, these values correspond to solar neutrino fluxes of (1.6±0.3)×10{8}  cm{-2} s^{-1} and <7.7×10{8}  cm{-2} s{-1} (95% C.L.), respectively, in agreement with both the high and low metallicity standard solar models. These results represent the first direct evidence of the pep neutrino signal and the strongest constraint of the CNO solar neutrino flux to date.

Precision measurement of the (7)Be solar neutrino interaction rate in Borexino

The rate of neutrino-electron elastic scattering interactions from 862 keV (7)Be solar neutrinos in Borexino is determined to be 46.0±1.5(stat)(-1.6)(+1.5)(syst) counts/(day·100  ton). This corresponds to a ν(e)-equivalent (7)Be solar neutrino flux of (3.10±0.15)×10(9)  cm(-2) s(-1) and, under the assumption of ν(e) transition to other active neutrino flavours, yields an electron neutrino survival probability of 0.51±0.07 at 862 keV. The no flavor change hypothesis is ruled out at 5.0 σ. A global solar neutrino analysis with free fluxes determines Φ(pp)=6.06(-0.06)(+0.02)×10(10)  cm(-2) s(-1) and Φ(CNO)<1.3×10(9)  cm(-2) s(-1) (95% C.L.). These results significantly improve the precision with which the Mikheyev-Smirnov-Wolfenstein large mixing angle neutrino oscillation model is experimentally tested at low energy.

Direct measurement of the 7Be solar neutrino flux with 192 days of borexino data

We report the direct measurement of the 7Be solar neutrino signal rate performed with the Borexino detector at the Laboratori Nazionali del Gran Sasso. The interaction rate of the 0.862 MeV 7Be neutrinos is 49+/-3stat+/-4syst counts/(day.100 ton). The hypothesis of no oscillation for 7Be solar neutrinos is inconsistent with our measurement at the 4sigma C.L. Our result is the first direct measurement of the survival probability for solar nu(e) in the transition region between matter-enhanced and vacuum-driven oscillations. The measurement improves the experimental determination of the flux of 7Be, pp, and CNO solar nu(e), and the limit on the effective neutrino magnetic moment using solar neutrinos.