Correction to Influence of Generated Defects by Ar Implantation on the Thermoelectric Properties of ScN

[This corrects the article DOI: 10.1021/acsaem.2c01672.].

Influence of Generated Defects by Ar Implantation on the Thermoelectric Properties of ScN

Nowadays, making thermoelectric materials more efficient in energy conversion is still a challenge. In this work, to reduce the thermal conductivity and thus improve the overall thermoelectric performances, point and extended defects were generated in epitaxial 111-ScN thin films by implantation using argon ions. The films were investigated by structural, optical, electrical, and thermoelectric characterization methods. The results demonstrated that argon implantation leads to the formation of stable defects (up to 750 K operating temperature). These were identified as interstitial-type defect clusters and argon vacancy complexes. The insertion of these specific defects induces acceptor-type deep levels in the band gap, yielding a reduction in the free-carrier mobility. With a reduced electrical conductivity, the irradiated sample exhibited a higher Seebeck coefficient while maintaining the power factor of the film. The thermal conductivity is strongly reduced from 12 to 3 W·m^-1·K^-1 at 300 K, showing the influence of defects in increasing phonon scattering. Subsequent high-temperature annealing at 1573 K leads to the progressive evolution of these defects: the initial clusters of interstitials evolved to the benefit of smaller clusters and the formation of bubbles. Thus, the number of free carriers, the resistivity, and the Seebeck coefficient are almost restored but the mobility of the carriers remains low and a 30% drop in thermal conductivity is still effective (k _total ∼ 8.5 W·m^-1·K^-1). This study shows that control defect engineering with defects introduced by irradiation using noble gases in a thermoelectric coating can be an attractive method to enhance the figure of merit of thermoelectric materials.

Microstructural and conductivity changes induced by annealing of ZnO:B thin films deposited by chemical vapour deposition

Zinc oxide (ZnO) thin films have attracted much attention in recent years due to progress in crystal growth for a large variety of technological applications including optoelectronics and transparent electrodes in solar cells. Boron (B)-doped ZnO thin films are deposited by low pressure chemical vapour deposition (LPCVD) on Si(100). These films exhibit a strong (002) texture with a pyramidal grain structure. The ZnO films were annealed after growth; the annealing temperature and the atmosphere appear to strongly impact the layer conductivity. This work will first present the modification of the physical properties (carrier concentration, mobility) extracted from the simulation of layer reflection in the infrared range. At low annealing temperatures the mobility increases slightly before decreasing drastically above a temperature close to 250 °C. The chemical and structural evolution (XPS, x-ray diffraction) of the films was also studied to identify the relationship between microstructural modifications and the variations observed in the film conductivity. An in situ XRD study during annealing has been performed under air and low pressure conditions. As observed for electrical properties, the microstructural modifications shift to higher temperatures for vacuum annealing.

Mn-doped ZnO nanocrystals embedded in Al2O3: structural and electrical properties

We report on the structural and electrical properties of Mn-doped ZnO/Al(2)O(3) nanostructures produced by the pulsed laser deposition technique. Grazing incidence small angle x-ray scattering (GISAXS) and Rutherford backscattering spectrometry revealed the multilayered structure in as-deposited samples. Annealing of the nanostructures was shown to promote the formation of nanocrystals embedded in the Al(2)O(3) matrix, as was evidenced by GISAXS and high resolution transmission microscopy. Particle-induced x-ray emission analysis showed a doping of 8 at.% Mn in ZnO. Grazing incidence x-ray diffraction and Raman spectroscopy demonstrated that the nanocrystals have the pure wurtzite ZnMnO crystalline phase. Resonant Raman scattering displayed an increase of intensity of the 1LO mode as well as broadening of the 2LO mode related to the size effect. Capacitance-voltage measurements showed carrier retention with a voltage shift higher than those reported for similar systems.

Short note on parallel illumination in the TEM

Parallel illumination conditions are required for several experiments in the transmission electron microscope (TEM). The image rotation induced by the helical trajectory of electrons passing through the magnetic field of the TEM lenses inevitably induces an inclination of the beam relative to the optical axis in the object plane--even for an electron which travels parallel to the optical axis in the far field. This angle (shear angle) is vectorially added to the convergence angle; it depends both on the distance to the optical axis and the magnetic field. By using a beam tilt compensation method, the minimum shear angle is found to be of the order of 1 mrad for a field of view of 2 microm in a 200 kV TEM. In practice, "parallel illumination" can only be obtained for fields of view 1 microm.

Phase analysis of superconducting polycrystalline MgB(2)

Superconducting MgB(2) ceramics were prepared and yield superconducting transition temperatures of about 39 K. For covering the various length scales on which inhomogeneities appear in MgB(2), electron-probe micro-analysis (EPMA) and analytical transmission electron microscopy (TEM) were applied for a phase analysis. Particularly useful were the preliminary electron spectroscopic imaging (ESI) results in the TEM. It could be shown by EPMA that the microstructure consists of a Mg-B-O matrix and boron-rich secondary phases of composition close to MgB(12). It was unclear in which form oxygen was present in the superconducting matrix. By combining the acquisition of B-K and O-K edge jump ratio images and energy-dispersive X-ray spectroscopy in the TEM, we could prove that the matrix consists of superconducting MgB(2) and MgO. Most of the MgO precipitates and grains appear with diameters between 20 and 300 nm. The size distribution of MgO was inhomogeneous and oxygen-rich areas of dimensions >1 microm were also observed. Edge jump ratio images obtained by ESI were analysed for determining the signal values and effects of multiple inelastic scattering.

A simple, quick and reliable method for TEM cross-section preparation of ceramic oxide films on thin metal substrates

We present a preparation method of cross-sectional thin foils for transmission electron microscopy (TEM). Samples are 0.1-1 m thick ceramic oxide films (CeO2, CeO2-YBa2Cu3O7 and CeO2-ZrO2/YO2-YBa2Cu3O7) epitaxially grown on 30-100 m highly textured nickel substrates. This method includes gluing the sample between a copper oxide dummy and a silicon dummy, followed by mechanical polishing and conventional ion milling. TEM cross-sectional samples obtained with this selection of dummies are electron-transparent up to a few tens of m parallel to the film surface. Several layer structures were analyzed by TEM and the results are shown. The preparation technique described here can be applied to any type of oxide film deposited on thin metal substrates.