Forevacuum plasma-cathode electron source for generation of a ribbon beam over a wide pressure range

We describe the results of our investigations of the generation of a ribbon electron beam (10 × 220 mm2) by a two-stage discharge system based on a hollow-cathode glow discharge plasma. The source design enables operation in the pressure range 2 × 10-2 to 10 Pa. At a beam accelerating voltage of 8 kV, the beam current is 450 mA at a pressure of 2 × 10-2 Pa and 150 mA at a pressure of 10 Pa. To achieve a uniform current density distribution of the beam over its cross-sectional area, a special design of emission electrode was employed. This enabled us to reduce non-uniformities of the beam current density distribution to a level of 10%.

Ion beam composition in ion source based on magnetron sputtering discharge at extremely low working pressure

In an ion source based on a pulsed planar magnetron sputtering discharge with gas (argon) feed, the fraction of metal ions in the ion beam decreases with decreasing gas pressure, down to the minimum possible working pressure of the magnetron sputtering discharge. The use of a supplementary vacuum arc plasma injector provides stable operation of the pulsed magnetron sputtering discharge at extremely low pressure and without gas feed. Under these conditions, the pressure dependence of the gaseous ion fraction displays a maximum (is nonmonotonic).

Broad-beam plasma-cathode electron beam source based on a cathodic arc for beam generation over a wide pulse-width range

We describe the design, parameters, and characteristics of a modified wide-aperture, plasma-cathode electron beam source operating in the pressure range of 3 Pa-30 Pa and generating large-radius, low-energy (up to 10 keV) electron beams with a pulse width varying from 0.05 ms to 20 ms and a beam current up to several tens of amperes. A pulsed cathodic arc is used to generate the emission plasma, and a DC accelerating voltage is used to form the electron beam. Modernization of the design and optimization of the operating conditions of the electron source have provided a multiple increase in the pulse duration of the electron beam current and the corresponding increase in the beam energy per pulse, as compared to previously developed pulsed forevacuum electron sources.

Plasma electron source for generating a ribbon beam in the forevacuum pressure range

We describe a plasma-cathode electron beam source based on a hollow cathode glow discharge and operating in the forevacuum pressure range that produces a steady-state ribbon beam. The electron beam is generated in the pressure range of 10-30 Pa. A multi-aperture electron extraction and beam formation system is used to provide beam stability and enhanced uniformity of beam current density, allowing the use of this kind of device for beam-plasma surface modification over relatively large areas.

Forevacuum-pressure plasma-cathode high-power continuous electron beam source

We describe a plasma-cathode electron beam source based on a hollow-cathode discharge that is capable of generating a 9 kW dc electron beam at an accelerating voltage of 20 kV, with helium as a working gas at a pressure of 30 Pa. A test run of ∼50 operational hours did not indicate any significant degradation of the electron source extraction system or other structural components, and we estimate the operational lifetime of the source at about 100-120 h.

Pulsed vacuum arc plasma source of supersonic metal ion flow

Supersonic plasma flows with densities of 10¹³-10¹⁶ cm^-3 find application in various fields of physics and technology such as surface modification, simulation of plasma impact in fusion facilities, and laboratory studies of space phenomena. The work outlined here describes a pulsed vacuum arc source of supersonic dense metal plasma flow. The design, working principle, features of the power supply circuit, and main parameters of the plasma source in relation to the parameter of the vacuum arc pulse are discussed. Flows of ionized aluminum, copper, tantalum, and molybdenum were investigated. At a vacuum arc current amplitude of 25 kA, the source generated a plasma with a density of 3 × 10¹⁵ cm^-3. The ion velocity in the plasma flow and the ion charge state composition were measured. For an aluminum cathode, we have carried out measurements of the macroparticle fraction and the erosion rate. This supersonic metal ion plasma flow source is primarily designed for studying the flow interaction with an inhomogeneous magnetic field, with simultaneous application of electron cyclotron resonance irradiation from high-power pulsed gyrotrons, but may also find other applications.

Double-coil magnetic focusing of the electron beam generated by a plasma-cathode electron source

We present the results of our investigations of magnetic focusing of the electron beam generated by a plasma-cathode electron source in the forevacuum pressure range (10-30 Pa). We show that a magnetic double-focusing system employing two separate field coils with the main magnetic coil located close to the beam collector at the focal plane provides effective and efficient focusing of the electron beam. With our e-beam source, this focusing system produces a power density of more than 1 MW/cm² at the electron beam focus with an accelerating voltage of 30 kV and a beam current up to 60 mA. For comparison, the maximum beam power density provided by plasma-cathode electron sources at pressures of less than 0.1 Pa is at the level of 10 MW/cm².

Deposition of dielectric films on silicon using a fore-vacuum plasma electron source

We describe an experiment on the use of a fore-vacuum-pressure, plasma-cathode, electron beam source with current up to 100 mA and beam energy up to 15 keV for deposition of Mg and Al oxide films on Si substrates in an oxygen atmosphere at a pressure of 10 Pa. The metals (Al and Mg) were evaporated and ionized using the electron beam with the formation of a gas-metal beam-plasma. The plasma was deposited on the surface of Si substrates. The elemental composition of the deposited films was analyzed.

Boron ion beam generation utilizing lanthanum hexaboride cathodes: Comparison of vacuum arc and planar magnetron glow

Boron ion beams are widely used for semiconductor ion implantation and for surface modification for improving the operating parameters and increasing the lifetime of machine parts and tools. For the latter application, the purity requirements of boron ion beams are not as stringent as for semiconductor technology, and a composite cathode of lanthanum hexaboride may be suitable for the production of boron ions. We have explored the use of two different approaches to boron plasma production: vacuum arc and planar high power impulse magnetron in self-sputtering mode. For the arc discharge, the boron plasma is generated at cathode spots, whereas for the magnetron discharge, the main process is sputtering of cathode material. We present here the results of comparative test experiments for both kinds of discharge, aimed at determining the optimal discharge parameters for maximum yield of boron ions. For both discharges, the extracted ion beam current reaches hundreds of milliamps and the fraction of boron ions in the total extracted ion beam is as high as 80%.

Lifetime of hydrogenated composite cathodes in a vacuum arc ion source

The paper reports on a study of the mass-charge state of the plasma produced in a vacuum arc discharge with composite cathodes which were copper-disk coated with a hydrogenated Zr film of thicknesses 9, 22, and 35 μm. The cathodes allow the generation of multicomponent gas and metal ion beams with a hydrogen ion content from several to several tens of percent. Also investigated is the dependence of the H ion fraction in a beam on the Zr film thickness during erosion to the point of disappearance of Zr peaks in mass-charge spectra. The ability of the vacuum arc system to produce H ions is analyzed by analyzing the cathode lifetime as a function of the film thickness and pulse repetition frequency.

Operating modes of a hydrogen ion source based on a hollow-cathode pulsed Penning discharge

An ion source based on a hollow-cathode Penning discharge was switched to a high-current pulsed mode (tens of amperes and tens of microseconds) to produce an intense hydrogen ion beam. With molecular hydrogen (H2), the ion beam contained three species: H(+), H2(+), and H3(+). For all experimental conditions, the fraction of H2 (+) ions in the beam was about 10 ÷ 15% of the total ion beam current and varied little with ion source parameters. At the same time, the ratio of H(+) and H3(+) depended strongly on the discharge current, particularly on its distribution in the gap between the hollow and planar cathodes. Increasing the discharge current increased the H(+) fraction in ion beam. The maximum fraction of H(+) reached 80% of the total ion beam current. Forced redistribution of the discharge current in the cathode gap for increasing the hollow cathode current could greatly increase the H3(+) fraction in the beam. At optimum parameters, the fraction of H3(+) ions reached 60% of the total ion beam current.

A vacuum spark ion source: High charge state metal ion beams

High ion charge state is often important in ion beam physics, among other reasons for the very practical purpose that it leads to proportionately higher ion beam energy for fixed accelerating voltage. The ion charge state of metal ion beams can be increased by replacing a vacuum arc ion source by a vacuum spark ion source. Since the voltage between anode and cathode remains high in a spark discharge compared to the vacuum arc, higher metal ion charge states are generated which can then be extracted as an ion beam. The use of a spark of pulse duration less than 10 μs and with current up to 10 kA allows the production of ion beams with current of several amperes at a pulse repetition rate of up to 5 pps. We have demonstrated the formation of high charge state heavy ions (bismuth) of up to 15 + and a mean ion charge state of more than 10 +. The physics and techniques of our vacuum spark ion source are described.

Molecular ion sources for low energy semiconductor ion implantation (invited)

Smaller semiconductors require shallow, low energy ion implantation, resulting space charge effects, which reduced beam currents and production rates. To increase production rates, molecular ions are used. Boron and phosphorous (or arsenic) implantation is needed for P-type and N-type semiconductors, respectively. Carborane, which is the most stable molecular boron ion leaves unacceptable carbon residue on extraction grids. A self-cleaning carborane acid compound (C4H12B10O4) was synthesized and utilized in the ITEP Bernas ion source resulting in large carborane ion output, without carbon residue. Pure gaseous processes are desired to enable rapid switch among ion species. Molecular phosphorous was generated by introducing phosphine in dissociators via 4PH3 = P4 + 6H2; generated molecular phosphorous in a pure gaseous process was then injected into the HCEI Calutron-Bernas ion source, from which P4(+) ion beams were extracted. Results from devices and some additional concepts are described.

Modified quadrupole mass analyzer RGA-100 for beam plasma research in forevacuum pressure range

The industrial quadrupole RGA-100 residual gas analyzer was modified for the research of electron beam-generated plasma at forevacuum pressure range. The standard ionizer of the RGA-100 was replaced by three electrode extracting unit. We made the optimization of operation parameters in order to provide the maximum values of measured currents of any ion species. The modified analyzer was successfully tested with beam plasma of argon, nitrogen, oxygen, and hydrocarbons.

Inverse time-of-flight spectrometer for beam plasma research

The paper describes the design and principle of operation of an inverse time-of-flight spectrometer for research in the plasma produced by an electron beam in the forevacuum pressure range (5-20 Pa). In the spectrometer, the deflecting plates as well as the drift tube and the primary ion beam measuring system are at high potential with respect to ground. This provides the possibility to measure the mass-charge constitution of the plasma created by a continuous electron beam with a current of up to 300 mA and electron energy of up to 20 keV at forevacuum pressures in the chamber placed at ground potential. Research results on the mass-charge state of the beam plasma are presented and analyzed.

Gold ion implantation into alumina using an "inverted ion source" configuration

We describe an approach to ion implantation in which the plasma and its electronics are held at ground potential and the ion beam is injected into a space held at high negative potential, allowing considerable savings both economically and technologically. We used an "inverted ion implanter" of this kind to carry out implantation of gold into alumina, with Au ion energy 40 keV and dose (3-9) × 10(16) cm(-2). Resistivity was measured in situ as a function of dose and compared with predictions of a model based on percolation theory, in which electron transport in the composite is explained by conduction through a random resistor network formed by Au nanoparticles. Excellent agreement is found between the experimental results and the theory.

Ion angular distribution in plasma of vacuum arc ion source with composite cathode and elevated gas pressure

The Metal Vapor Vacuum Arc (MEVVA) ion sources are capable of generating ion beams of almost all metals of the periodic table. For this kind of ion source, a combination of gas feeding with magnetic field allows the simultaneous generation of both metal and gaseous ions. That makes the MEVVA ion source an excellent instrument for science and application. This work presents results of investigation for ion angular distributions in vacuum arc plasma of Mevva-V.Ru ion source for composite cathodes and for elevated gas pressure. It was shown that for all the cathode materials, singly charged ions have wider angular distribution than multiply charged ions. Increasing the working gas pressure leads to a significant change in the angular distribution of gaseous ions, while with the distribution of metal ions gas remains practically unchanged. The reasons for such different influences are discussed.

Gas feeding molecular phosphorous ion source for semiconductor implanters

Phosphorus is a much used dopant in semiconductor technology. Its vapors represent a rather stable tetratomic molecular compound and are produced from one of the most thermodynamically stable allotropic forms of phosphorus-red phosphorus. At vacuum heating temperatures ranging from 325 °C, red phosphorus evaporates solely as P4 molecules (P4/P2 ∼ 2 × 10(5), P4/P ∼ 10(21)). It is for this reason that red phosphorus is best suited as a source of polyatomic molecular ion beams. The paper reports on experimental research in the generation of polyatomic phosphorus ion beams with an alternative P vapor source for which a gaseous compound of phosphorus with hydrogen - phosphine - is used. The ion source is equipped with a specially designed dissociator in which phosphine heated to temperatures close to 700 °C decomposes into molecular hydrogen and phosphorus (P4) and then the reaction products are delivered through a vapor line to the discharge chamber. Experimental data are presented reflecting the influence of the discharge parameters and temperature of the dissociator heater on the mass-charge state of the ion beam.

Generation of high charge state platinum ions on vacuum arc plasma heated by gyrotron radiation

The hybrid high charge metal ion source based on vacuum arc plasma heated by gyrotron radiation into simple magnetic trap has been developed. Two types of magnetic traps were used: a mirror configuration and a cusp one with inherent "minimum-B" structure. Pulsed high power (>100 kW) gyrotrons with frequency 37.5 GHz and 75 GHz were used for heating the vacuum arc plasma injected into the traps. Two different ways were used for injecting the metal plasma-axial injection by a miniature arc source located on-axis near the microwave window, and simultaneous radial injection by a number of sources mounted radially at the midplane of the traps. This article represents all data gathered for platinum ions, thus making comparison of the experimental results obtained with different traps and injections convenient and accurate.

Inverted time-of-flight spectrometer for mass-to-charge analysis of plasma

The paper describes the principle of operation, design special features, and parameters of an inverted time-of-flight spectrometer. The spectrometer is designed in such way that its deflecting plates, drift tube, and primary measuring system are at high potential with respect to the ground potential, whereas plasma is formed near grounded electrodes. This type of configuration greatly extends the application range of the device, making it possible to measure the mass-to-charge composition of plasma with wide range of parameters.

Development of the ion source for cluster implantation

Bernas ion source development to meet needs of 100s of electron-volt ion implanters for shallow junction production is in progress in Institute for Theoretical and Experimental Physics. The ion sources provides high intensity ion beam of boron clusters under self-cleaning operation mode. The last progress with ion source operation is presented. The mechanism of self-cleaning procedure is described.

Performance of an inverted ion source

Whereas energetic ion beams are conventionally produced by extracting ions (say, positive ions) from a plasma that is held at high (positive) potential, with ion energy determined by the potential drop through which the ions fall in the beam formation electrode system, in the device described here the plasma and its electronics are held at ground potential and the ion beam is formed and injected energetically into a space maintained at high (negative) potential. We refer to this configuration as an "inverted ion source." This approach allows considerable savings both technologically and economically, rendering feasible some ion beam applications, in particular small-scale ion implantation, that might otherwise not be possible for many researchers and laboratories. We have developed a device of this kind utilizing a metal vapor vacuum arc plasma source, and explored its operation and beam characteristics over a range of parameter variation. The downstream beam current has been measured as a function of extraction voltage (5-35 kV), arc current (50-230 A), metal ion species (Ti, Nb, Au), and extractor grid spacing and beamlet aperture size (3, 4, and 5 mm). The downstream ion beam current as measured by a magnetically-suppressed Faraday cup was up to as high as 600 mA, and with parametric variation quite similar to that found for the more conventional metal vapor vacuum arc ion source.

Low-energy, high-current, ion source with cold electron emitter

An ion source based on a two-stage discharge with electron injection from a cold emitter is presented. The first stage is the emitter itself, and the second stage provides acceleration of injected electrons for gas ionization and formation of ion flow (<20 eV, 5 A dc). The ion accelerating system is gridless; acceleration is accomplished by an electric field in the discharge plasma within an axially symmetric, diverging, magnetic field. The hollow cathode electron emitter utilizes an arc discharge with cathode spots hidden inside the cathode cavity. Selection of the appropriate emitter material provides a very low erosion rate and long lifetime.

Electrostatic plasma lens for focusing negatively charged particle beams

We describe the current status of ongoing research and development of the electrostatic plasma lens for focusing and manipulating intense negatively charged particle beams, electrons, and negative ions. The physical principle of this kind of plasma lens is based on magnetic isolation electrons providing creation of a dynamical positive space charge cloud in shortly restricted volume propagating beam. Here, the new results of experimental investigations and computer simulations of wide-aperture, intense electron beam focusing by plasma lens with positive space charge cloud produced due to the cylindrical anode layer accelerator creating a positive ion stream towards an axis system is presented.

Molecular phosphorus ion source for semiconductor technology

This paper presents results on the generation of molecular phosphorus ion beams in a hot filament ion source. Solid red phosphorous is evaporated mainly as tetra-atomic molecules up to a temperature of 800°C. Thus, one of the main conditions for producing maximum P(4)(+) fraction in the beam is to keep the temperature of the phosphorous oven, the steam line and the discharge chamber walls no greater than 800°C. The prior version of our ion source was equipped with a discharge chamber cooling system. The modified source ensured a P(4)(+) ion beam current greater than 30% of the total beam current.

Angular distribution of plasma in the vacuum arc ion source

This paper presents measurements of the angular distribution of the plasma components and different charge states of metal ions generated by a MEVVA-type ion source and measured by a time-of-flight mass-spectrometer. The experiments were performed for different cathode materials (Al, Cu, and Ti) and for different parameters of the vacuum arc discharge. The results are compared with prior results reported by other authors. The influence of different discharge parameters on the angular distribution in a vacuum arc source is discussed.

High-energy metal ion implantation for reduction of surface resistivity of alumina ceramic

In this work, the possibility to increase the surface conductivity of ceramic insulators through their treatment with accelerated metal ion beams produced by a MevvaV.Ru vacuum arc source is demonstrated. The increase in surface conductivity is made possible due to experimental conditions in which an insulated collector is charged by beam ions to a potential many times lower than the accelerating voltage, and hence, than the average beam ion energy. The observed effect of charge neutralization of the accelerated ion beam is presumably associated with electrons knocked out of the electrodes of the accelerating system of the source and of the walls of the vacuum chamber by the accelerated ions.

Upgraded vacuum arc ion source for metal ion implantation

Vacuum arc ion sources have been made and used by a large number of research groups around the world over the past twenty years. The first generation of vacuum arc ion sources (dubbed "Mevva," for metal vapor vacuum arc) was developed at Lawrence Berkeley National Laboratory in the 1980s. This paper considers the design, performance parameters, and some applications of a new modified version of this kind of source which we have called Mevva-V.Ru. The source produces broad beams of metal ions at an extraction voltage of up to 60 kV and a time-averaged ion beam current in the milliampere range. Here, we describe the Mevva-V.Ru vacuum arc ion source that we have developed at Tomsk and summarize its beam characteristics along with some of the applications to which we have put it. We also describe the source performance using compound cathodes.

Generation of high charge state metal ion beams by electron cyclotron resonance heating of vacuum arc plasma in cusp trap

A method for generating high charge state heavy metal ion beams based on high power microwave heating of vacuum arc plasma confined in a magnetic trap under electron cyclotron resonance conditions has been developed. A feature of the work described here is the use of a cusp magnetic field with inherent "minimum-B" structure as the confinement geometry, as opposed to a simple mirror device as we have reported on previously. The cusp configuration has been successfully used for microwave heating of gas discharge plasma and extraction from the plasma of highly charged, high current, gaseous ion beams. Now we use the trap for heavy metal ion beam generation. Two different approaches were used for injecting the vacuum arc metal plasma into the trap--axial injection from a miniature arc source located on-axis near the microwave window, and radial injection from sources mounted radially at the midplane of the trap. Here, we describe preliminary results of heating vacuum arc plasma in a cusp magnetic trap by pulsed (400 μs) high power (up to 100 kW) microwave radiation at 37.5 GHz for the generation of highly charged heavy metal ion beams.

Generation of multicomponent ion beams by a vacuum arc ion source with compound cathode

This paper presents the results of time-of-flight mass spectrometry studies of the elemental and mass-to-charge state compositions of metal ion beams produced by a vacuum arc ion source with compound cathode (WC-Co(0.5), Cu-Cr(0.25), Ti-Cu(0.1)). We found that the ion beam composition agrees well with the stoichiometric composition of the cathode material from which the beam is derived, and the maximum ion charge state of the different plasma components is determined by the ionization capability of electrons within the cathode spot plasma, which is common to all components. The beam mass-to-charge state spectrum from a compound cathode features a greater fraction of multiply charged ions for those materials with lower electron temperature in the vacuum arc cathode spot, and a smaller fraction for those with higher electron temperature within the spot. We propose a potential diagram method for determination of attainable ion charge states for all components of the compound cathodes.

Self-heated hollow cathode discharge system for charged particle sources and plasma generators

This paper presents the results of experimental studies of a new design of discharge system using a self-heated hollow cathode. The discharge system offers certain advantages that are attractive for use in high-dose ion implantation, plasma generators, and plasma electron sources.

Gridless, very low energy, high-current, gaseous ion source

We have made and tested a very low energy gaseous ion source in which the plasma is established by a gaseous discharge with electron injection in an axially diverging magnetic field. A constricted arc with hidden cathode spot is used as the electron emitter (first stage of the discharge). The electron flux so formed is filtered by a judiciously shaped electrode to remove macroparticles (cathode debris from the cathode spot) from the cathode material as well as atoms and ions. The anode of the emitter discharge is a mesh, which also serves as cathode of the second stage of the discharge, providing a high electron current that is injected into the magnetic field region where the operating gas is efficiently ionized. In this discharge configuration, an electric field is formed in the ion generation region, accelerating gas ions to energy of several eV in a direction away from the source, without the use of a gridded acceleration system. Our measurements indicate that an argon ion beam is formed with an energy of several eV and current up to 2.5 A. The discharge voltage is kept at less than 20 V, to keep below ion sputtering threshold for cathode material, a feature which along with filtering of the injected electron flow, results in extremely low contamination of the generated ion flow.

Two-stage plasma gun based on a gas discharge with a self-heating hollow emitter

The paper presents the results of tests of a new compact two-stage bulk gas plasma gun. The plasma gun is based on a nonself-sustained gas discharge with an electron emitter based on a discharge with a self-heating hollow cathode. The operating characteristics of the plasma gun are investigated. The discharge system makes it possible to produce uniform and stable gas plasma in the dc mode with a plasma density up to 3x10(9) cm(-3) at an operating gas pressure in the vacuum chamber of less than 2x10(-2) Pa. The device features high power efficiency, design simplicity, and compactness.

Glow plasma trigger for electron cyclotron resonance ion sources

Electron cyclotron resonance ion sources (ECRISs) are particularly useful for nuclear, atomic, and high energy physics, as unique high current generators of multicharged ion beams. Plasmas of gas discharges in an open magnetic trap heated by pulsed (100 micros and longer) high power (100 kW and higher) high-frequency (greater than 37.5 GHz) microwaves of gyrotrons is promising in the field of research in the development of electron cyclotron resonance sources for high charge state ion beams. Reaching high ion charge states requires a decrease in gas pressure in the magnetic trap, but this method leads to increases in time, in which the microwave discharge develops. The gas breakdown and microwave discharge duration becomes greater than or equal to the microwave pulse duration when the pressure is decreased. This makes reaching the critical plasma density initiate an electron cyclotron resonance (ECR) discharge during pulse of microwave gyrotron radiation with gas pressure lower than a certain threshold. In order to reduce losses of microwave power, it is necessary to shorten the time of development of the ECR discharge. For fast triggering of ECR discharge under low pressure in an ECRIS, we initially propose to fill the magnetic trap with the plasmas of auxiliary pulsed discharges in crossed ExB fields. The glow plasma trigger of ECR based on a Penning or magnetron discharge has made it possible not only to fill the trap with plasma with density of 10(12) cm(-3), required for a rapid increase in plasma density and finally for ECR discharge ignition, but also to initially heat the plasma electrons to T(e) approximately = 20 eV.

Boron ion source based on planar magnetron discharge in self-sputtering mode

An ion source based on a planar magnetron sputtering device with thermally isolated target has been designed and demonstrated. For a boron sputtering target, high target temperature is required because boron has low electrical conductivity at room temperature, increasing with temperature. The target is well-insulated thermally and can be heated by an initial low-current, high-voltage discharge mode. A discharge power of 16 W was adequate to attain the required surface temperature (400 degrees C), followed by transition of the discharge to a high-current, low-voltage mode for which the magnetron enters a self-sputtering operational mode. Beam analysis was performed with a time-of-flight system; the maximum boron ion fraction in the beam is greater than 99%, and the mean boron ion fraction, time-integrated over the whole pulse length, is about 95%. We have plans to make the ion source steady state and test with a bending magnet. This kind of boron ion source could be competitive to conventional boron ion sources that utilize compounds such as BF(3), and could be useful for semiconductor industry application.

Broad-beam high-current dc ion source based on a two-stage glow discharge plasma

We have designed, made, and demonstrated a broad-beam, dc, ion source based on a two-stage, hollow-cathode, and glow discharges plasma. The first-stage discharge (auxiliary discharge) produces electrons that are injected into the cathode cavity of a second-stage discharge (main discharge). The electron injection causes a decrease in the required operating pressure of the main discharge down to 0.05 mTorr and a decrease in required operating voltage down to about 50 V. The decrease in operating voltage of the main discharge leads to a decrease in the fraction of impurity ions in the ion beam extracted from the main gas discharge plasma to less than 0.2%. Another feature of the source is a single-grid accelerating system in which the ion accelerating voltage is applied between the plasma itself and the grid electrode. The source has produced steady-state Ar, O, and N ion beams of about 14 cm diameter and current of more than 2 A at an accelerating voltage of up to 2 kV.

High current multicharged metal ion source using high power gyrotron heating of vacuum arc plasma

A high current, multi charged, metal ion source using electron heating of vacuum arc plasma by high power gyrotron radiation has been developed. The plasma is confined in a simple mirror trap with peak magnetic field in the plug up to 2.5 T, mirror ratio of 3-5, and length variable from 15 to 20 cm. Plasma formed by a cathodic vacuum arc is injected into the trap either (i) axially using a compact vacuum arc plasma gun located on axis outside the mirror trap region or (ii) radially using four plasma guns surrounding the trap at midplane. Microwave heating of the mirror-confined, vacuum arc plasma is accomplished by gyrotron microwave radiation of frequency 75 GHz, power up to 200 kW, and pulse duration up to 150 micros, leading to additional stripping of metal ions by electron impact. Pulsed beams of platinum ions with charge state up to 10+, a mean charge state over 6+, and total (all charge states) beam current of a few hundred milliamperes have been formed.

Bernas ion source discharge simulation

As the technology and applications continue to grow up, the development of plasma and ion sources with clearly specified characteristic is required. Therefore comprehensive numerical studies at the project stage are the key point for ion implantation source manufacturing (especially for low energy implantation). Recently the most commonly encountered numerical approach is the Monte Carlo particle-in-cell (MCPIC) method also known as particle-in-cell method with Monte Carlo collisions. In ITEP the 2D3V numerical code PICSIS-2D realizing MCPIC method was developed in the framework of the joint research program. We present first results of the simulation for several materials interested in semiconductors. These results are compared with experimental data obtained at the ITEP ion source test bench.

Status of ITEP decaborane ion source program

The joint research and development program is continued to develop steady-state ion source of decaborane beam for ion implantation industry. Both Freeman and Bernas ion sources for decaborane ion beam generation were investigated. Decaborane negative ion beam as well as positive ion beam were generated and delivered to the output of mass separator. Experimental results obtained in ITEP are presented.

Generation of space charge compensated low energy ion flux

The results of an experimental study of low-energy (<200 eV) ion flux generation with space charge neutralization are presented. Argon was used as a working gas. The working gas pressure in the vacuum chamber was 2-4 x 10(-2) Pa. Ion beam was extracted from the hollow cathode of main discharge plasma by a single mesh extractor with subsequent deceleration of ions to a required energy in a layer between the mesh and the beam plasma. The ion beam current was measured on the collector located on the distance of 30-60 cm from the discharge system. The penetration of electron component from the main discharge plasma through the mesh into the region of the ion beam drift space was realized by potential barrier reduction, in conditions of the optimal extractor potential with respect to the hollow cathode. The space charge neutralization of low-energy ion beam resulted in drift space plasma potential reduction and ion beam current growth. At the main discharge current of 1 A and main discharge voltage of 300 V, the ion beam current of up to 100 mA with the ion energy of 50-150 eV was obtained.

Side extraction duoPIGatron-type ion source

We have designed and constructed a compact duoPIGatron-type ion source, for possible use in ion implanters, in which ions are extracted from a side aperture in contrast to conventional duoPIGatron sources with axial ion extraction. The size of the side extraction aperture is 1 x 40 mm(2). The ion source was developed to study physical and technological aspects relevant to an industrial ion source. The side extraction duoPIGatron has a stable arc, uniformly bright illumination, and dense plasma. The present work describes some operating parameters of the ion source using argon and BF(3). Total unanalyzed beam currents were 40 mA with Ar at an arc current of 7 A and 13 mA with BF(3) gas at an arc current of 9 A.

Experimental comparison of time-of-flight mass analysis with magnetic mass analysis

A series of experiments was carried out in which both a magnetic analyzer (mass separator) and a time-of-flight (TOF) spectrometer were used for ion charge/mass spectral analysis of the ion beam formed by a dc Bernas ion source made for semiconductor implantation. The TOF analyzer was a detachable device that provides rapid analysis of charge-to-mass composition of moderate energy ion beams. The magnetic analyzer was a massive device using a 90 degrees -sector bending magnet with radius of the central orbit of 35 cm. Comparison of these two methods for measuring ion beam composition shows good agreement.

Temporal development of ion beam mean charge state in pulsed vacuum arc ion sources

Vacuum arc ion sources, commonly also known as "Mevva" ion sources, are used to generate intense pulsed metal ion beams. It is known that the mean charge state of the ion beam lies between 1 and 4, depending on cathode material, arc current, arc pulse duration, presence or absence of magnetic field at the cathode, as well as background gas pressure. A characteristic of the vacuum arc ion beam is a significant decrease in ion charge state throughout the pulse. This decrease can be observed up to a few milliseconds, until a "noisy" steady-state value is established. Since the extraction voltage is constant, a decrease in the ion charge state has a proportional impact on the average ion beam energy. This paper presents results of detailed investigations of the influence of arc parameters on the temporal development of the ion beam mean charge state for a wide range of cathode materials. It is shown that for fixed pulse duration, the charge state decrease can be reduced by lower arc current, higher pulse repetition rate, and reduction of the distance between cathode and extraction region. The latter effect may be associated with charge exchange processes in the discharge plasma.

Ion sources for energy extremes of ion implantation

For the past four years a joint research and development effort designed to develop steady state, intense ion sources has been in progress with the ultimate goal to develop ion sources and techniques that meet the two energy extreme range needs of meV and hundreads of eV ion implanters. This endeavor has already resulted in record steady state output currents of high charge state of antimony and phosphorus ions: P(2+) [8.6 pmA (particle milliampere)], P(3+) (1.9 pmA), and P(4+) (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb(3+)Sb(4+), Sb(5+), and Sb(6+) respectively. For low energy ion implantation, our efforts involve molecular ions and a novel plasmaless/gasless deceleration method. To date, 1 emA (electrical milliampere) of positive decaborane ions was extracted at 10 keV and smaller currents of negative decaborane ions were also extracted. Additionally, boron current fraction of over 70% was extracted from a Bernas-Calutron ion source, which represents a factor of 3.5 improvement over currently employed ion sources.

Inverted end-Hall-type low-energy high-current gaseous ion source

A novel approach to low-energy, high-current, gaseous ion beam generation was explored and an ion source based on this technique has been developed. The source utilizes a dc high-current (up to 20 A) gaseous discharge with electron injection into the region of ion generation. Compared to the conventional end-Hall ion source, the locations of the discharge anode and cathode are inverted: the cathode is placed inside the source and the anode outside, and correspondingly, the discharge current is in the opposite direction. The discharge operates in a diverging axial magnetic field, similar to the end-Hall source. Electron generation and injection is accomplished by using an additional arc discharge with a "cold" (filamentless) hollow cathode. Low plasma contamination is achieved by using a low discharge voltage (avoidance of sputtering), as well as by a special geometric configuration of the emitter discharge electrodes, thereby filtering (removing) the erosion products stemming from the emitter cathode. The device produces a dc ion flow with energy below 20 eV and current up to 2.5 A onto a collector of 500 cm(2) at 25 cm from the source edge, at a pressure > or =0.02 Pa and gas flow rate > or =14 SCCM. The ion energy spread is 2 to 3 eV (rms). The source is characterized by high reliability, low maintenance, and long lifetime. The beam contains less than 0.1% of metallic ions. The specific electric energy consumption is 400 eV per ion registered at the collector. The source operates with noble gases, nitrogen, oxygen, and hydrocarbons. Utilizing biasing, it can be used for plasma sputtering, etching, and other ion technologies.

Small plasma source for materials application

We describe a small hollow-cathode plasma source suitable for small-scale materials synthesis and modification application. The supporting electrical system is minimal. The gaseous plasma source delivers a plasma ion current of up to about 1 mA. Here we outline the source construction and operation, and present some of its basic performance characteristics.