Garlid ES, Hu QO, Chan MK, Palmstrøm CJ, Crowell PA. Electrical measurement of the direct spin hall effect in Fe/InxGa(1-x)As heterostructures.
Phys Rev Lett 2010;
105:156602. [PMID:
21230922 DOI:
10.1103/physrevlett.105.156602]
[Citation(s) in RCA: 15] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/26/2010] [Indexed: 05/30/2023]
Abstract
We report on an all-electrical measurement of the spin Hall effect in epitaxial Fe/InxGa(1-x)As heterostructures with n-type (Si) channel doping and highly doped Schottky tunnel barriers. A transverse spin current generated by an ordinary charge current flowing in the InxGa(1-x)As is detected by measuring the spin accumulation at the edges of the channel. The spin accumulation is identified through the observation of a Hanle effect in the voltage measured by pairs of ferromagnetic Hall contacts. We investigate the bias and temperature dependence of the resulting Hanle signal and determine the skew and side-jump contributions to the total spin Hall conductivity.
Collapse