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Chuang P, Ho SC, Smith LW, Sfigakis F, Pepper M, Chen CH, Fan JC, Griffiths JP, Farrer I, Beere HE, Jones GAC, Ritchie DA, Chen TM. All-electric all-semiconductor spin field-effect transistors. Nat Nanotechnol 2015; 10:35-39. [PMID: 25531088 DOI: 10.1038/nnano.2014.296] [Citation(s) in RCA: 83] [Impact Index Per Article: 9.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/07/2014] [Accepted: 11/11/2014] [Indexed: 06/04/2023]
Abstract
The spin field-effect transistor envisioned by Datta and Das opens a gateway to spin information processing. Although the coherent manipulation of electron spins in semiconductors is now possible, the realization of a functional spin field-effect transistor for information processing has yet to be achieved, owing to several fundamental challenges such as the low spin-injection efficiency due to resistance mismatch, spin relaxation and the spread of spin precession angles. Alternative spin transistor designs have therefore been proposed, but these differ from the field-effect transistor concept and require the use of optical or magnetic elements, which pose difficulties for incorporation into integrated circuits. Here, we present an all-electric and all-semiconductor spin field-effect transistor in which these obstacles are overcome by using two quantum point contacts as spin injectors and detectors. Distinct engineering architectures of spin-orbit coupling are exploited for the quantum point contacts and the central semiconductor channel to achieve complete control of the electron spins (spin injection, manipulation and detection) in a purely electrical manner. Such a device is compatible with large-scale integration and holds promise for future spintronic devices for information processing.
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Affiliation(s)
- Pojen Chuang
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - Sheng-Chin Ho
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - L W Smith
- Cavendish Laboratory, J.J. Thomson Avenue, Cambridge CB3 0HE, UK
| | - F Sfigakis
- Cavendish Laboratory, J.J. Thomson Avenue, Cambridge CB3 0HE, UK
| | - M Pepper
- Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK
| | - Chin-Hung Chen
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - Ju-Chun Fan
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - J P Griffiths
- Cavendish Laboratory, J.J. Thomson Avenue, Cambridge CB3 0HE, UK
| | - I Farrer
- Cavendish Laboratory, J.J. Thomson Avenue, Cambridge CB3 0HE, UK
| | - H E Beere
- Cavendish Laboratory, J.J. Thomson Avenue, Cambridge CB3 0HE, UK
| | - G A C Jones
- Cavendish Laboratory, J.J. Thomson Avenue, Cambridge CB3 0HE, UK
| | - D A Ritchie
- Cavendish Laboratory, J.J. Thomson Avenue, Cambridge CB3 0HE, UK
| | - Tse-Ming Chen
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
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Sfigakis F, Ford CJB, Pepper M, Kataoka M, Ritchie DA, Simmons MY. Kondo effect from a tunable bound state within a quantum wire. Phys Rev Lett 2008; 100:026807. [PMID: 18232908 DOI: 10.1103/physrevlett.100.026807] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2007] [Indexed: 05/25/2023]
Abstract
We investigate the conductance of quantum wires with a variable open quantum dot geometry, displaying an exceptionally strong Kondo effect and most of the 0.7 structure characteristics. Our results indicate that the 0.7 structure is not a manifestation of the singlet Kondo effect. However, specific similarities between our devices and many of the clean quantum wires reported in the literature suggest a weakly bound state is often present in real quantum wires.
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Affiliation(s)
- F Sfigakis
- Cavendish Laboratory, J. J. Thomson Avenue, Cambridge, CB3 OHE, United Kingdom.
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