Application of cold argon plasma on germination, root length, and decontamination of soybean cultivars

Applying cold discharge plasma can potentially alter plants' germination characteristics by triggering their physiological activities. As a main crop in many countries, soybean was examined in the present study using cultivars such as Arian, Katoul, Saba, Sari, and Williams in a cold argon plasma. This study has been motivated by the importance of plant production worldwide, considering climate change and the increasing needs of human populations for food. This study was performed to inspect the effect of cold plasma treatment on seed germination and the impact of argon plasma on microbial decontamination was investigated on soybeans. Also, the employed cultivars have not been studied until now the radicals generated from argon were detected by optical emission spectrometry (OES), and a collisional radiative model was used to describe electron density. The germination properties, including final germination percentage (FGP), mean germination time (MGT), root length, and electrical conductivity of biomolecules released from the seeds, were investigated after the plasma treatments for 30, 60, 180, 300, and 420 s. The decontamination effect of the plasma on Aspergillus flavus (A.flavus) and Fusarium solani (F.solani) was also examined. The plasma for 60 s induced a maximum FGP change of 23.12 ± 0.34% and a lowest MGT value of 1.40 ± 0.007 days. Moreover, the ultimate root length was 56.12 ± 2.89%, in the seeds treated for 60 s. The plasma exposure, however, failed to yield a significant enhancement in electrical conductivity, even when the discharge duration was extended to 180 s or longer. Therefore, the plasma duration of 180 s was selected for the blotter technique. Both fungi showed successful sterilization; their infectivity inhibition was 67 ± 4 and 65 ± 3.1%, respectively. In general, the cold plasma used for soybeans in the present study preserved their healthy qualities and reduced the degree of fungal contamination.

Inductively shunted transmons exhibit noise insensitive plasmon states and a fluxon decay exceeding 3 hours

Currently available quantum processors are dominated by noise, which severely limits their applicability and motivates the search for new physical qubit encodings. In this work, we introduce the inductively shunted transmon, a weakly flux-tunable superconducting qubit that offers charge offset protection for all levels and a 20-fold reduction in flux dispersion compared to the state-of-the-art resulting in a constant coherence over a full flux quantum. The parabolic confinement provided by the inductive shunt as well as the linearity of the geometric superinductor facilitates a high-power readout that resolves quantum jumps with a fidelity and QND-ness of >90% and without the need for a Josephson parametric amplifier. Moreover, the device reveals quantum tunneling physics between the two prepared fluxon ground states with a measured average decay time of up to 3.5 h. In the future, fast time-domain control of the transition matrix elements could offer a new path forward to also achieve full qubit control in the decay-protected fluxon basis.

Converting microwave and telecom photons with a silicon photonic nanomechanical interface

Practical quantum networks require low-loss and noise-resilient optical interconnects as well as non-Gaussian resources for entanglement distillation and distributed quantum computation. The latter could be provided by superconducting circuits but existing solutions to interface the microwave and optical domains lack either scalability or efficiency, and in most cases the conversion noise is not known. In this work we utilize the unique opportunities of silicon photonics, cavity optomechanics and superconducting circuits to demonstrate a fully integrated, coherent transducer interfacing the microwave X and the telecom S bands with a total (internal) bidirectional transduction efficiency of 1.2% (135%) at millikelvin temperatures. The coupling relies solely on the radiation pressure interaction mediated by the femtometer-scale motion of two silicon nanobeams reaching a Vπ as low as 16 μV for sub-nanowatt pump powers. Without the associated optomechanical gain, we achieve a total (internal) pure conversion efficiency of up to 0.019% (1.6%), relevant for future noise-free operation on this qubit-compatible platform.