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Smith LA, Bem JD, Lv X, Lauto A, Sliow A, Ma Z, Mahns DA, Berryman C, Hutchinson MR, Fumeaux C, Tettamanzi GC. Investigation of the mechanisms for wireless nerve stimulation without active electrodes. Bioelectromagnetics 2023; 44:181-191. [PMID: 37908196 PMCID: PMC10947236 DOI: 10.1002/bem.22486] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/04/2022] [Revised: 05/27/2023] [Accepted: 09/18/2023] [Indexed: 11/02/2023]
Abstract
Electric-field stimulation of neuronal activity can be used to improve the speed of regeneration for severed and damaged nerves. Most techniques, however, require invasive electronic circuitry which can be uncomfortable for the patient and can damage surrounding tissue. A recently suggested technique uses a graft-antenna-a metal ring wrapped around the damaged nerve-powered by an external magnetic stimulation device. This technique requires no electrodes and internal circuitry with leads across the skin boundary or internal power, since all power is provided wirelessly. This paper examines the microscopic basic mechanisms that allow the magnetic stimulation device to cause neural activation via the graft-antenna. A computational model of the system was created and used to find that under magnetic stimulation, diverging electric fields appear at the metal ring's edges. If the magnetic stimulation is sufficient, the gradients of these fields can trigger neural activation in the nerve. In-vivo measurements were also performed on rat sciatic nerves to support the modeling finding that direct contact between the antenna and the nerve ensures neural activation given sufficient magnetic stimulation. Simulations also showed that the presence of a thin gap between the graft-antenna and the nerve does not preclude neural activation but does reduce its efficacy.
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Affiliation(s)
- Luke A. Smith
- School of Electrical and Electronic EngineeringUniversity of AdelaideAdelaideAustralia
| | - Jaedon D. Bem
- School of Electrical and Electronic EngineeringUniversity of AdelaideAdelaideAustralia
| | - Xiaojing Lv
- School of Electrical and Electronic EngineeringUniversity of AdelaideAdelaideAustralia
| | - Antonio Lauto
- School of ScienceWestern Sydney UniversityPenrithNew South WalesAustralia
| | - Ashour Sliow
- School of ScienceWestern Sydney UniversityPenrithNew South WalesAustralia
| | - Zhiyuan Ma
- School of MedicineWestern Sydney UniversityPenrithNew South WalesAustralia
| | - David A. Mahns
- School of MedicineWestern Sydney UniversityPenrithNew South WalesAustralia
| | - Carolyn Berryman
- School of BiomedicineUniversity of AdelaideAdelaideSouth AustraliaAustralia
| | - Mark R. Hutchinson
- Adelaide Medical School, Institute of Photonics and Advanced SensingUniversity of AdelaideAdelaideSouth AustraliaAustralia
| | - Christophe Fumeaux
- School of Electrical and Electronic EngineeringUniversity of AdelaideAdelaideAustralia
| | - Giuseppe C. Tettamanzi
- Discipline of Materials Engineering, School of Chemical EngineeringUniversity of AdelaideAdelaideSouth AustraliaAustralia
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2
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Sliow A, Ma Z, Gargiulo G, Mahns D, Mawad D, Breen P, Stoodley M, Houang J, Kuchel R, Tettamanzi GC, Tilley RD, Frost SJ, Morley J, Longo L, Lauto A. Stimulation and Repair of Peripheral Nerves Using Bioadhesive Graft-Antenna. Adv Sci (Weinh) 2019; 6:1801212. [PMID: 31179205 PMCID: PMC6548953 DOI: 10.1002/advs.201801212] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/27/2018] [Revised: 03/05/2019] [Indexed: 06/09/2023]
Abstract
An original wireless stimulator for peripheral nerves based on a metal loop (diameter ≈1 mm) that is powered by a transcranial magnetic stimulator (TMS) and does not require circuitry components is reported. The loop can be integrated in a chitosan scaffold that functions as a graft when applied onto transected nerves (graft-antenna). The graft-antenna is bonded to rat sciatic nerves by a laser without sutures; it does not migrate after implantation and is able to trigger steady compound muscle action potentials for 12 weeks (CMAP ≈1.3 mV). Eight weeks postoperatively, axon regeneration is facilitated in transected nerves that are repaired with the graft-antenna and stimulated by the TMS for 1 h per week. The graft-antenna is an innovative and minimally-invasive device that functions concurrently as a wireless stimulator and adhesive scaffold for nerve repair.
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Affiliation(s)
- Ashour Sliow
- School of Science and HealthWestern Sydney UniversityLocked Bag 1797PenrithNSW2751Australia
| | - Zhi Ma
- School of MedicineWestern Sydney UniversityPenrithNSW2751Australia
| | - Gaetano Gargiulo
- Biomedical Engineering & Neuroscience Research GroupMARCS InstituteWestern Sydney UniversityPenrithNSW2751Australia
| | - David Mahns
- School of MedicineWestern Sydney UniversityPenrithNSW2751Australia
| | - Damia Mawad
- School of Materials Science and EngineeringUniversity of New South WalesKensingtonNSW2052Australia
| | - Paul Breen
- Biomedical Engineering & Neuroscience Research GroupMARCS InstituteWestern Sydney UniversityPenrithNSW2751Australia
| | - Marcus Stoodley
- The Australian School of Advanced MedicineMacquarie UniversityNorth RydeNSW2109Australia
| | - Jessica Houang
- School of Aerospace, Mechanical and Mechatronic EngineeringUniversity of SydneySydneyNSW2006Australia
| | - Rhiannon Kuchel
- Mark Wainwright Analytical CentreUniversity of New South WalesKensingtonNSW2052Australia
| | - Giuseppe C. Tettamanzi
- School of Physical Sciences and Institute for Photonics and Advanced SensingUniversity of AdelaideAdelaideSA5005Australia
| | - Richard D. Tilley
- Mark Wainwright Analytical CentreUniversity of New South WalesKensingtonNSW2052Australia
| | - Samuel J. Frost
- School of Science and HealthWestern Sydney UniversityLocked Bag 1797PenrithNSW2751Australia
| | - John Morley
- School of MedicineWestern Sydney UniversityPenrithNSW2751Australia
| | - Leonardo Longo
- Faculty of Human SciencesUniversity of the Republic of San MarinoContrada Omerelli47890Republic of San Marino
| | - Antonio Lauto
- School of Science and HealthWestern Sydney UniversityLocked Bag 1797PenrithNSW2751Australia
- School of MedicineWestern Sydney UniversityPenrithNSW2751Australia
- Biomedical Engineering & Neuroscience Research GroupMARCS InstituteWestern Sydney UniversityPenrithNSW2751Australia
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Rossi A, Klochan J, Timoshenko J, Hudson FE, Möttönen M, Rogge S, Dzurak AS, Kashcheyevs V, Tettamanzi GC. Gigahertz Single-Electron Pumping Mediated by Parasitic States. Nano Lett 2018; 18:4141-4147. [PMID: 29916248 DOI: 10.1021/acs.nanolett.8b00874] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
In quantum metrology, semiconductor single-electron pumps are used to generate accurate electric currents with the ultimate goal of implementing the emerging quantum standard of the ampere. Pumps based on electrostatically defined tunable quantum dots (QDs) have thus far shown the most promising performance in combining fast and accurate charge transfer. However, at frequencies exceeding approximately 1 GHz the accuracy typically decreases. Recently, hybrid pumps based on QDs coupled to trap states have led to increased transfer rates due to tighter electrostatic confinement. Here, we operate a hybrid electron pump in silicon obtained by coupling a QD to multiple parasitic states and achieve robust current quantization up to a few gigahertz. We show that the fidelity of the electron capture depends on the sequence in which the parasitic states become available for loading, resulting in distinctive frequency-dependent features in the pumped current.
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Affiliation(s)
- Alessandro Rossi
- Cavendish Laboratory , University of Cambridge , J.J. Thomson Avenue , Cambridge , CB3 0HE , United Kingdom
| | - Jevgeny Klochan
- Faculty of Physics and Mathematics , University of Latvia , Riga LV-1002 , Latvia
| | - Janis Timoshenko
- Faculty of Physics and Mathematics , University of Latvia , Riga LV-1002 , Latvia
| | - Fay E Hudson
- School of Electrical Engineering and Telecommunications , The University of New South Wales , Sydney , New South Wales 2052 , Australia
| | - Mikko Möttönen
- QCD Laboratories, QTF Centre of Excellence, Department of Applied Physics , Aalto University , P.O. Box 13500, FI-00076 Aalto , Finland
| | - Sven Rogge
- School of Physics , The University of New South Wales , Sydney , N ew South Wales 2052 , Australia
| | - Andrew S Dzurak
- School of Electrical Engineering and Telecommunications , The University of New South Wales , Sydney , New South Wales 2052 , Australia
| | | | - Giuseppe C Tettamanzi
- Institute of Photonics and Advanced Sensing and School of Physical Sciences , The University of Adelaide , Adelaide , South Australia 5005 , Australia
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4
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Rossi A, Tanttu T, Tan KY, Iisakka I, Zhao R, Chan KW, Tettamanzi GC, Rogge S, Dzurak AS, Möttönen M. An accurate single-electron pump based on a highly tunable silicon quantum dot. Nano Lett 2014; 14:3405-3411. [PMID: 24823277 DOI: 10.1021/nl500927q] [Citation(s) in RCA: 18] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
Nanoscale single-electron pumps can be used to generate accurate currents, and can potentially serve to realize a new standard of electrical current based on elementary charge. Here, we use a silicon-based quantum dot with tunable tunnel barriers as an accurate source of quantized current. The charge transfer accuracy of our pump can be dramatically enhanced by controlling the electrostatic confinement of the dot using purposely engineered gate electrodes. Improvements in the operational robustness, as well as suppression of nonadiabatic transitions that reduce pumping accuracy, are achieved via small adjustments of the gate voltages. We can produce an output current in excess of 80 pA with experimentally determined relative uncertainty below 50 parts per million.
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Affiliation(s)
- Alessandro Rossi
- School of Electrical Engineering & Telecommunications, The University of New South Wales , Sydney 2052, Australia
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5
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van der Heijden J, Salfi J, Mol JA, Verduijn J, Tettamanzi GC, Hamilton AR, Collaert N, Rogge S. Probing the spin states of a single acceptor atom. Nano Lett 2014; 14:1492-1496. [PMID: 24571637 DOI: 10.1021/nl4047015] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
We demonstrate a single-hole transistor using an individual acceptor dopant embedded in a silicon channel. Magneto-transport spectroscopy reveals that the ground state splits as a function of magnetic field into four states, which is unique for a single hole bound to an acceptor in a bulk semiconductor. The two lowest spin states are heavy (|m(j)| = 3/2) and light (|m(j)| = 1/2) hole-like, a two-level system that can be electrically driven and is characterized by a magnetic field dependent and long relaxation time, which are properties of interest for qubits. Although the bulklike spin splitting of a boron atom is preserved in our nanotransistor, the measured Landé g-factors, |g(hh)| = 0.81 ± 0.06 and |g(lh)| = 0.85 ± 0.21 for heavy and light holes respectively, are lower than the bulk value.
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Affiliation(s)
- Joost van der Heijden
- Centre for Quantum Computation and Communication Technology and ‡School of Physics, University of New South Wales , Sydney NSW 2052, Australia
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6
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Abstract
Single donor atoms in semiconductor nanostructures are attractive basic components for quantum device applications. In this work, we demonstrate the ability to manipulate the wave function of a single donor electron with an electric field. The deformation of the wave function is probed by the tunnel current which, furthermore, allows for the determination of the location of the atom in the device. This experiment demonstrates the control necessary for the utilization of single donors in quantum electronics.
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Affiliation(s)
- J Verduijn
- Centre for Quantum Computation and Communication Technology, University of New South Wales, Sydney, NSW 2052, Australia.
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7
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Prati E, De Michielis M, Belli M, Cocco S, Fanciulli M, Kotekar-Patil D, Ruoff M, Kern DP, Wharam DA, Verduijn J, Tettamanzi GC, Rogge S, Roche B, Wacquez R, Jehl X, Vinet M, Sanquer M. Few electron limit of n-type metal oxide semiconductor single electron transistors. Nanotechnology 2012; 23:215204. [PMID: 22552118 DOI: 10.1088/0957-4484/23/21/215204] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
We report the electronic transport on n-type silicon single electron transistors (SETs) fabricated in complementary metal oxide semiconductor (CMOS) technology. The n-type metal oxide silicon SETs (n-MOSSETs) are built within a pre-industrial fully depleted silicon on insulator (FDSOI) technology with a silicon thickness down to 10 nm on 200 mm wafers. The nominal channel size of 20 × 20 nm(2) is obtained by employing electron beam lithography for active and gate level patterning. The Coulomb blockade stability diagram is precisely resolved at 4.2 K and it exhibits large addition energies of tens of meV. The confinement of the electrons in the quantum dot has been modeled by using a current spin density functional theory (CS-DFT) method. CMOS technology enables massive production of SETs for ultimate nanoelectronic and quantum variable based devices.
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Affiliation(s)
- Enrico Prati
- Laboratorio MDM, CNR-IMM, Via Olivetti 2, I-20864 Agrate Brianza, Italy.
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8
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Tettamanzi GC, Verduijn J, Lansbergen GP, Blaauboer M, Calderón MJ, Aguado R, Rogge S. Magnetic-field probing of an SU(4) Kondo resonance in a single-atom transistor. Phys Rev Lett 2012; 108:046803. [PMID: 22400874 DOI: 10.1103/physrevlett.108.046803] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2011] [Indexed: 05/31/2023]
Abstract
Semiconductor devices have been scaled to the point that transport can be dominated by only a single dopant atom. As a result, in a Si fin-type field effect transistor Kondo physics can govern transport when one electron is bound to the single dopant. Orbital (valley) degrees of freedom, apart from the standard spin, strongly modify the Kondo effect in such systems. Owing to the small size and the s-like orbital symmetry of the ground state of the dopant, these orbital degrees of freedom do not couple to external magnetic fields which allows us to tune the symmetry of the Kondo effect. Here we study this tunable Kondo effect and demonstrate experimentally a symmetry crossover from an SU(4) ground state to a pure orbital SU(2) ground state as a function of magnetic field. Our claim is supported by theoretical calculations that unambiguously show that the SU(2) symmetric case corresponds to a pure valley Kondo effect of fully polarized electrons.
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Affiliation(s)
- G C Tettamanzi
- Delft University of Technology, Kavli Institute of Nanoscience, Department of Quantum Nanoscience, Lorentzweg 1, 2628 CJ Delft, The Netherlands.
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9
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Lansbergen GP, Rahman R, Verduijn J, Tettamanzi GC, Collaert N, Biesemans S, Klimeck G, Hollenberg LCL, Rogge S. Lifetime-enhanced transport in silicon due to spin and valley blockade. Phys Rev Lett 2011; 107:136602. [PMID: 22026881 DOI: 10.1103/physrevlett.107.136602] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/07/2011] [Indexed: 05/31/2023]
Abstract
We report the observation of lifetime-enhanced transport (LET) based on perpendicular valleys in silicon by transport spectroscopy measurements of a two-electron system in a silicon transistor. The LET is manifested as a peculiar current step in the stability diagram due to a forbidden transition between an excited state and any of the lower energy states due to perpendicular valley (and spin) configurations, offering an additional current path. By employing a detailed temperature dependence study in combination with a rate equation model, we estimate the lifetime of this particular state to exceed 48 ns. The two-electron spin-valley configurations of all relevant confined quantum states in our device were obtained by a large-scale atomistic tight-binding simulation. The LET acts as a signature of the complicated valley physics in silicon: a feature that becomes increasingly important in silicon quantum devices.
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Affiliation(s)
- G P Lansbergen
- Kavli Institute of Nanoscience, Delft University of Technology, The Netherlands.
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10
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Lansbergen GP, Tettamanzi GC, Verduijn J, Collaert N, Biesemans S, Blaauboer M, Rogge S. Tunable Kondo effect in a single donor atom. Nano Lett 2010; 10:455-460. [PMID: 20041698 DOI: 10.1021/nl9031132] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
The Kondo effect has been observed in a single gate-tunable atom. The measurement device consists of a single As dopant incorporated in a silicon nanostructure. The atomic orbitals of the dopant are tunable by the gate electric field. When they are tuned such that the ground state of the atomic system becomes a (nearly) degenerate superposition of two of the silicon valleys, an exotic and hitherto unobserved valley Kondo effect appears. Together with the "regular" spin Kondo, the tunable valley Kondo effect allows for reversible electrical control over the symmetry of the Kondo ground state from an SU(2) to an SU(4) configuration.
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Affiliation(s)
- G P Lansbergen
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands.
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Tettamanzi GC, Pakes CI, Potenza A, Rubanov S, Marrows CH, Prawer S. Superconducting transition in Nb nanowires fabricated using focused ion beam. Nanotechnology 2009; 20:465302. [PMID: 19843991 DOI: 10.1088/0957-4484/20/46/465302] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Making use of focused Ga-ion beam (FIB) fabrication technology, the evolution with device dimension of the low-temperature electrical properties of Nb nanowires has been examined in a regime where crossover from Josephson-like to insulating behaviour is evident. Resistance-temperature data for devices with a physical width of order 100 nm demonstrate suppression of superconductivity, leading to dissipative behaviour that is shown to be consistent with the activation of phase-slip below T(c). This study suggests that by exploiting the Ga-impurity poisoning introduced by the FIB into the periphery of the nanowire, a central superconducting phase-slip nanowire with sub-10 nm dimensions may be engineered within the core of the nanowire.
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Affiliation(s)
- G C Tettamanzi
- School of Physics, University of Melbourne, Victoria 3010, Australia.
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