Kianirad H, Zukauskas A, Frisk T, Canalias C, Laurell F. Contact poling of Rb:KTiOPO(4) using a micro-structured silicon electrode.
Opt Express 2015;
23:636-641. [PMID:
25835822 DOI:
10.1364/oe.23.000636]
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Abstract
A contact poling technique for domain engineering of ferroelectrics using a micro-structured silicon electrode is demonstrated on Rb:KTiOPO4. High quality QPM gratings were reproducibly fabricated. The silicon electrode is reusable and the technique potentially suitable when complex structures with sub-μm features are to be domain engineered, which otherwise is incompatible with conventional photolithography. A non-negligible domain broadening was seen and attributed to a low nucleation rate using this type of electrode. However, under the appropriate poling conditions, this could be exploited to obtain a QPM grating with a short pitch (2 μm), equal to half of the electrode period.
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